JPS63111176A - Production of electrically conductive transparent film - Google Patents
Production of electrically conductive transparent filmInfo
- Publication number
- JPS63111176A JPS63111176A JP61257225A JP25722586A JPS63111176A JP S63111176 A JPS63111176 A JP S63111176A JP 61257225 A JP61257225 A JP 61257225A JP 25722586 A JP25722586 A JP 25722586A JP S63111176 A JPS63111176 A JP S63111176A
- Authority
- JP
- Japan
- Prior art keywords
- base material
- laser beam
- laser
- tin oxide
- gaseous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000463 material Substances 0.000 claims abstract description 33
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract description 19
- 239000007789 gas Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 10
- 150000003606 tin compounds Chemical class 0.000 claims description 7
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 4
- 229910001882 dioxygen Inorganic materials 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 abstract description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 2
- 239000008246 gaseous mixture Substances 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
- 239000010408 film Substances 0.000 description 26
- 239000000758 substrate Substances 0.000 description 20
- 238000006243 chemical reaction Methods 0.000 description 13
- 239000011521 glass Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 4
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 238000010408 sweeping Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- CZRDZAGTSCUWNG-UHFFFAOYSA-M chloro(dimethyl)tin Chemical compound C[Sn](C)Cl CZRDZAGTSCUWNG-UHFFFAOYSA-M 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Photovoltaic Devices (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、可視光域で透明であり、なおかつ導電性を持
ち、各種ディスプレイや太陽電池等に用いられる透明導
電膜の製造方法に関するものであ従来の技術
近年、透明導電膜は、各種ディスプレイの開発に伴い、
その需要は、増加の傾向にある。透明導電膜の種類とし
ては、酸化インジウム、酸化亜鉛。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing a transparent conductive film that is transparent in the visible light range and has conductivity, and is used in various displays, solar cells, etc. Technology In recent years, transparent conductive films have been developed with the development of various displays.
The demand is on the rise. Types of transparent conductive films include indium oxide and zinc oxide.
酸化錫等があるが、この中では、導電性の点より、錫を
不純物として含む酸化インジウム（１，Ｔ、Ｏ）による
ものが現在主流である。しかしながら、酸化錫は、低価
格、耐寿命性という点で、見直されてきている。Among these, indium oxide (1, T, O) containing tin as an impurity is currently mainstream due to its conductivity. However, tin oxide is being reconsidered due to its low cost and long lifespan.
まず、酸化錫膜の製法としては、基材自体を加熱するか
、あるいは基材を収めた反応室全体を加熱し、基材周辺
の反応性ガスを熱分解して、熱分解生成物である酸化錫
を基板上に形成する方法があった。しかし、これらは、
基材周辺の空間全体が高温になっているので、反応性ガ
スの熱分解生成物が、さらに、二次的、三次的に熱分解
したり、あるいは、熱分解生成物が未分解の反応ガスと
反応して、形成した薄膜中に、大小様々なビットが生じ
るという欠点の他、基材が強く加熱されるので、基材の
歪、そり、縮み等、加熱による寸法精度の狂いや、基材
自体のｍ織の変質、すでに基材に形成された機能的構造
の変化等、形成薄膜と基材双方に多くの損傷が発生する
危険があった。これらに対して、次のような製造方法が
考案された。First, the method for producing a tin oxide film is to heat the base material itself or to heat the entire reaction chamber containing the base material to thermally decompose the reactive gas around the base material to generate thermal decomposition products. There was a method of forming tin oxide on a substrate. However, these
Since the entire space around the substrate is at a high temperature, the thermal decomposition products of the reactive gas may be further thermally decomposed secondary or tertiary, or the thermal decomposition products may become undecomposed reactive gases. In addition to the disadvantage that bits of various sizes are generated in the formed thin film due to the reaction with There was a risk that a lot of damage would occur to both the formed thin film and the base material, such as deterioration of the m-weave of the material itself and changes in the functional structure already formed on the base material. In response to these, the following manufacturing method has been devised.
すなわち、大気中、または減圧中で、所用の基材の表面
に接して、錫化合物ガスと酸素ガスを主成分とするガス
状気流を送り、単一レーザビームで前記基材面を照射加
熱することにより、前記ガス状気流を瞬時に熱分解し、
基材面に酸化錫膜を形成するものである。この方法は、
反応を起こす範囲をレーザ照射部である基材の極表面層
のみに限定するため、前者の製法で問題となった２次生
成物によるビット発生や、基材のそり、歪による基材精
度誤差の発生を防ぐことができるといわれていた。That is, a gaseous air stream containing tin compound gas and oxygen gas as main components is sent in contact with the surface of the desired base material in the atmosphere or under reduced pressure, and the surface of the base material is irradiated and heated with a single laser beam. By doing so, the gaseous air stream is instantly thermally decomposed,
A tin oxide film is formed on the surface of the base material. This method is
Since the range in which the reaction occurs is limited to only the extreme surface layer of the base material, which is the laser irradiation area, the generation of bits due to secondary products, which were problems with the former manufacturing method, and errors in base material accuracy due to warpage and distortion of the base material are avoided. It was said that it could prevent the occurrence of
発明が解決しようとする問題点
しかしながら、実際には、従来法の後者においてもレー
ザの１ビーム掃引による局部的で、急激な加熱をするこ
とで、ビーム照射部と非照射部との温度差が顕著である
ことからくる熱膨張歪による基材の部分破壊が、しばし
ば発生した。また、成膜時の急激な温度上昇によって膜
組成が安定しないといった問題も有していた。Problems to be Solved by the Invention However, in reality, even in the latter conventional method, the temperature difference between the beam irradiated area and the non-irradiated area is increased by localized and rapid heating by one beam sweep of the laser. Partial failure of the substrate due to significant thermal expansion strain often occurred. Further, there was a problem in that the film composition was not stabilized due to a rapid temperature rise during film formation.
本発明は、上記問題に鑑み、損傷のない均質な酸化錫膜
よりなる透明導電膜を提供するものである。In view of the above problems, the present invention provides a transparent conductive film made of a uniform tin oxide film without damage.
問題点を解決するための手段
上記問題点を解決するために、本発明の透明導電膜の製
造方法は、所用の基材の表面に接して、錫化合物ガスと
酸素ガスを主成分とするガス状気流を送り、一方、２つ
のレーザ発振器より発生した２つのビームのうち、第１
レーザビームで前記基材面を掃引照射し、予備加熱する
。続いて、第２レーザビームにて、前記第１レーザビー
ムにより予備加熱された基材表面を照射し、前記基材表
面に、酸化錫膜を形成するという構成を備えたものであ
る。Means for Solving the Problems In order to solve the above problems, the method for manufacturing a transparent conductive film of the present invention provides a method for producing a transparent conductive film in which a gas containing a tin compound gas and an oxygen gas as main components is brought into contact with the surface of a desired base material. On the other hand, of the two beams generated by the two laser oscillators, the first
The surface of the base material is irradiated in a sweeping manner with a laser beam to preheat it. Subsequently, the surface of the base material preheated by the first laser beam is irradiated with a second laser beam to form a tin oxide film on the surface of the base material.
作用
本発明は、上記した構成によって、レーザ照射を２段階
にわけることにより、瞬間的な温度上昇を緩和し、基材
損傷を避けることが可能となるとともに、膜成長時の温
度変化を押え、安定な膜組成を得ることができる。Effect of the present invention With the above-described configuration, by dividing laser irradiation into two stages, it is possible to alleviate instantaneous temperature rise and avoid damage to the base material, as well as to suppress temperature changes during film growth. A stable film composition can be obtained.
実施例
以下本発明の透明導電膜の製造方法の一実施例について
、図面を参照しながら説明する。EXAMPLE Hereinafter, an example of the method for manufacturing a transparent conductive film of the present invention will be described with reference to the drawings.
図は、本発明の一実施例において用いた大気中での透明
導電膜の製造装置の構成を示すものである。レーザ発振
器は、いずれもＣ０２レーザ発振器を用いている。第１
レーザ発振器１より水平に発射された第１レーザビーム
１４、および第２レーザ発振器２より水平に発射された
第２レーザビーム１５はそれぞれ反射ミラー３にて進行
方向を垂直方向に転換する。続いて、さらに、づ枚の回
転ミラー３でＸＹ二方向に掃引される。すなわち、試料
台８にのせられた基材であるガラス基板５の表面上をＸ
Ｙ二方向に２つのビームが連続に掃引照射し、基板面を
加熱する。加熱温度は、まず第１レーザビーム１４によ
り、酸化錫生成反応温度を若干下まわる約３００℃に加
熱し、ひき続く第２レーザビーム１５にて、約４５０℃
の酸化錫生成反応の適性温度まで加熱し、基板面に酸化
錫膜を形成する。この２つのレーザビームの掃引関係は
、同掃引線上をほぼ連続に並んで基板面を照射している
ことになる。The figure shows the configuration of an apparatus for manufacturing a transparent conductive film in the atmosphere used in an embodiment of the present invention. A C02 laser oscillator is used for each laser oscillator. 1st
A first laser beam 14 emitted horizontally from the laser oscillator 1 and a second laser beam 15 emitted horizontally from the second laser oscillator 2 have their respective traveling directions changed to the vertical direction by the reflecting mirror 3. Subsequently, it is further swept in the X and Y directions by two rotating mirrors 3. That is, the surface of the glass substrate 5, which is the base material placed on the sample stage 8, is
Two beams are continuously swept and irradiated in two Y directions to heat the substrate surface. The heating temperature is first heated to approximately 300°C with the first laser beam 14, which is slightly lower than the tin oxide production reaction temperature, and then heated to approximately 450°C with the second laser beam 15.
The substrate is heated to an appropriate temperature for the tin oxide production reaction to form a tin oxide film on the substrate surface. The sweeping relationship between these two laser beams means that they irradiate the substrate surface almost continuously on the same sweep line.
さて、酸化錫材料である反応ガス系は、それぞれ液化状
態の、錫化合物である塩化ジメチル錫（（ＣＨ３） ２
ＳｎＣｊ！２３９をＡｒガス１０でバブリングすること
により０□１１とともに、反応ガス供給ノズル６より、
錫を含有する反応性ガス１４として、基板上に噴出して
いる。Now, the reaction gas system that is the tin oxide material is dimethyltin chloride ((CH3) 2
SnCj! By bubbling 239 with Ar gas 10, along with 0□11, from the reaction gas supply nozzle 6,
A reactive gas 14 containing tin is ejected onto the substrate.
反応性ガス供給ノズル６には、噴射溝および、溝底には
、噴気孔を一定間隔で設けている。The reactive gas supply nozzle 6 is provided with an injection groove and blowholes are provided at regular intervals on the bottom of the groove.
Ａｒ：３１／ｍｉｎ、０２ ：３１／ｍｉｎ。Ar: 31/min, 02: 31/min.
（ＣＨ３） ２ Ｓ ｎ Ｃ１２ガスを含むＡｒ：０．
３１／ｍ ｉ ｎの反応性ガス組成の時、反応性ガス供
給ノズル６より噴出されるガス気流の形状は、幅約１０
０＋＋ｎ、厚さ約１０１■の板状で試料台上のガラス基
板５の表面を水平に通過する。回転ミラー３にて、ガラ
ス基板５上をＹ一方向に、第１ビーム、および、第２ビ
ームを掃引すると、第２ビームの照射に従い、基板面に
酸化錫膜の堆積が起る。また、回転ミラーにて、両レー
ザビームを連続的に、基板上をＸＹ二方向に掃引すれば
、２次元の大面積に酸化錫膜の堆積が起る。(CH3) 2 S n Ar containing C12 gas: 0.
When the reactive gas composition is 31/min, the shape of the gas stream ejected from the reactive gas supply nozzle 6 has a width of about 10
0++n and approximately 101 cm thick, it passes horizontally over the surface of the glass substrate 5 on the sample stage. When the first beam and the second beam are swept in the Y direction over the glass substrate 5 by the rotating mirror 3, a tin oxide film is deposited on the substrate surface in accordance with the irradiation of the second beam. Furthermore, if both laser beams are continuously swept over the substrate in the X and Y directions using a rotating mirror, a tin oxide film is deposited over a large two-dimensional area.
一般に酸化錫の反応温度は、３５０〜４５０℃である。Generally, the reaction temperature of tin oxide is 350 to 450°C.
３５０℃では、結晶性が不十分であり、比較的電気抵抗
も高いが高温になるに従い、結晶性は良好となり、抵抗
は下がる。しかし、５００℃を超えると結晶の成長過剰
が原因でむしろ抵抗は上がる。本発明による二重レーザ
照射プロセスでは、第２レーザ照射により、基板面を反
応ガス反応温度以下約３００℃前後に加熱し、さらに第
２レーザ照射により、反応温度４５０℃前後に加熱し、
基板面上に酸化錫を堆積する。この方法により作成した
酸化錫膜は、基材損傷が発生しなくなったとともに、従
来問題となった、膜厚の差で膜の比抵抗が異なるといっ
た膜組成の不安定性が殆どなく良好な膜を得ることがで
きた。このように、レーザ照射を２段階にわけることに
より、レーザによる温度コントロールをより厳密に制御
可能とし、反応の最適温度を安定に提供するとともに、
従来しばしば発生した、急激な基板加熱による損傷、歪
の残留等を避けることが可能となった。At 350° C., the crystallinity is insufficient and the electrical resistance is relatively high, but as the temperature increases, the crystallinity becomes better and the resistance decreases. However, when the temperature exceeds 500° C., the resistance increases due to excessive crystal growth. In the dual laser irradiation process according to the present invention, the substrate surface is heated by the second laser irradiation to about 300°C below the reaction temperature of the reaction gas, and further heated to the reaction temperature of about 450°C by the second laser irradiation,
Deposit tin oxide on the substrate surface. The tin oxide film created by this method does not damage the base material, and it also has a good film composition with almost no instability in the film composition, such as the difference in specific resistance due to the difference in film thickness, which was a problem in the past. I was able to get it. In this way, by dividing the laser irradiation into two stages, it is possible to more precisely control the temperature by the laser, stably providing the optimum temperature for the reaction, and
It is now possible to avoid damage, residual distortion, etc. caused by rapid substrate heating, which often occurred in the past.
また、第１．第２レーザビームのビーム径をレンズ径を
使用することにより、それぞれ変えることもできる。た
とえば、第２レーザビーム径は拡張し、第２レーザビー
ムは絞るといった組合せを用いることも可能である。あ
るいは、第２レーザビーム照射部の範囲内に第２レーザ
ビームのスポットをもってきて、いわゆる同軸照射を行
うことも可能である。Also, 1st. The beam diameter of the second laser beam can also be changed by using the lens diameter. For example, it is also possible to use a combination in which the diameter of the second laser beam is expanded and the second laser beam is narrowed down. Alternatively, it is also possible to bring the spot of the second laser beam within the range of the second laser beam irradiation section and perform so-called coaxial irradiation.
さらに、以上の実施例では、レーザ発振器としてＣＯ２
レーザを用いているが、これ以外の赤外レーザとしてＡ
ｒ、ＹＡＧ等を使用することもできる。基板としてもガ
ラス以外に、Ｓｉ、セラミックス等を使用できるが、こ
の場合留意すべき点は、レーザエネルギーを効率よく活
用するために、使用レーザ波長に対し、吸収率が高い基
板を組み合せる必要があるという点である。Furthermore, in the above embodiment, CO2 is used as a laser oscillator.
A laser is used as an infrared laser other than this.
r, YAG, etc. can also be used. In addition to glass, Si, ceramics, etc. can be used as the substrate, but in this case, it is important to keep in mind that in order to utilize laser energy efficiently, it is necessary to combine a substrate with a high absorption rate for the laser wavelength used. The point is that there is.
また、以上の実施例において、錫化合物９としては、（
ＣＨ３）２５ｎＣＩ１２を用いているが、これ以外にも
、常温あるいは加熱時に、液体または気体であり、反応
域へ不活性ガス等によるキャリヤガスを用いることで、
錫化合物のガス状気流として、反応域に供給が可能なも
のであればよく、実施例以外にも、５ｎＣＡ、、 （
ＣＨ３）４Ｓｎ。In addition, in the above examples, the tin compound 9 is (
CH3)25nCI12 is used, but in addition to this, it is a liquid or gas at room temperature or when heated, and by using a carrier gas such as an inert gas in the reaction zone,
Any substance that can be supplied to the reaction zone as a gaseous stream of a tin compound may be used.
CH3)4Sn.
ＣＨＳ ｎ Ｈ３、Ｃ４Ｈ９Ｓ ｎ ＣＩＩ ａ 。CHS n H3, C4H9S n CII a.
（Ｃ，Ｈｏ）２ＳｎＣｊ！２．（Ｃ，Ｈｏ）２ＳｎＯ。(C,Ho)2SnCj! 2. (C,Ho)2SnO.
（Ｃ４Ｈｇ ）４ Ｓｎ、 （Ｃ８Ｈ，）２５ｎＣ１
２゜（Ｃ８Ｈ，）２０．＜ｃｓ ＨＩ７ ） ４ ｓ
ｎ。(C4Hg)4Sn, (C8H,)25nC1
2゜(C8H,)20. <cs HI7) 4s
n.
（Ｃ，Ｈｇ ）２５ｎ（ＯＣＨ３）、（Ｃ，Ｈｇ ０）
４Ｓｎ。(C,Hg)25n(OCH3), (C,Hg 0)
4Sn.
（Ｃ４Ｈｇ ）２ Ｓｎ （ＯＣＣＨ３）２等があげら
れる。(C4Hg)2Sn(OCCH3)2 and the like.
なお、本実施例では、酸化錫の製膜反応を大気中で行っ
ているが、これはチャンバー等を用いて、密封大気中、
あるいは減圧中で行うことも可能である。In this example, the film forming reaction of tin oxide was carried out in the atmosphere, but this was carried out in a sealed atmosphere using a chamber or the like.
Alternatively, it is also possible to carry out under reduced pressure.
発明の効果
以上のように本発明は、所用の基材の表面に接して、錫
化合物ガスと酸素ガスを主成分とするガス状気流を送り
、第１レーザビームで前記基材面を照射し、予備加熱を
する。続いて、第２レーザビームにて、前記第１レーザ
ビームにより予備加熱された基材表面を照射加熱し、前
記基材表面に、酸化錫膜を作成するというレーザ照射を
２段階にわける構成をとることにより、レーザによる温
度コントロールをより厳密に制御可能とし、反応の最適
温度を安定に提供するとともに、従来しばしば発生した
、急激な基板加熱による損傷、歪の残留等を避けること
ができるという効果を得られる。Effects of the Invention As described above, the present invention provides a method for sending a gaseous air flow containing tin compound gas and oxygen gas as main components in contact with the surface of a desired base material, and irradiating the surface of the base material with a first laser beam. , preheat. Subsequently, a second laser beam is used to irradiate and heat the surface of the base material preheated by the first laser beam to create a tin oxide film on the surface of the base material. By doing so, it is possible to more precisely control the temperature using the laser, stably providing the optimum temperature for the reaction, and avoiding the damage and residual distortion caused by rapid substrate heating that often occurred in the past. You can get
図は本発明の一実施例における大気中での透明導電膜の
製造装置の構成図である。
１・・・・・・第ル−ザ発振器、２・・・・・・第２レ
ーザ発振器、５・・・・・・ガラス基板、６・・・・・
・反応製ガス供給ノズル、９・・・・・・錫化合物、１
２・・・・・・第１レーザビーム、１３・・・・・・第
２レーザビーム。The figure is a configuration diagram of an apparatus for manufacturing a transparent conductive film in the atmosphere according to an embodiment of the present invention. 1... Second laser oscillator, 2... Second laser oscillator, 5... Glass substrate, 6...
・Reaction gas supply nozzle, 9...Tin compound, 1
2...First laser beam, 13...Second laser beam.
Claims (2)
ガスを主成分とするガス状気流を送り、第１レーザビー
ムで前記基材面を掃引照射し、予備加熱する。続いて、
第２レーザビームにて、前記第１レーザビームにより予
備加熱された基材表面を照射し、前記基材表面に、酸化
錫膜を形成することを特徴とする透明導電膜の製造方法
。(1) A gaseous air stream containing tin compound gas and oxygen gas as main components is sent in contact with the surface of the desired base material, and the surface of the base material is swept and irradiated with a first laser beam to preheat it. continue,
A method for manufacturing a transparent conductive film, comprising irradiating a surface of a base material preheated by the first laser beam with a second laser beam to form a tin oxide film on the surface of the base material.
ずれもが赤外域のレーザビームである特許請求の範囲第
（１）項記載の透明導電膜の製造方法。(2) The method for manufacturing a transparent conductive film according to claim (1), wherein both the first laser beam and the second laser beam are infrared laser beams.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61257225A JPS63111176A (en) | 1986-10-29 | 1986-10-29 | Production of electrically conductive transparent film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61257225A JPS63111176A (en) | 1986-10-29 | 1986-10-29 | Production of electrically conductive transparent film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63111176A true JPS63111176A (en) | 1988-05-16 |
Family
ID=17303406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61257225A Pending JPS63111176A (en) | 1986-10-29 | 1986-10-29 | Production of electrically conductive transparent film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63111176A (en) |
-
1986
- 1986-10-29 JP JP61257225A patent/JPS63111176A/en active Pending
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