JPS63102383A - Josephson junction device - Google Patents
Josephson junction deviceInfo
- Publication number
- JPS63102383A JPS63102383A JP61248833A JP24883386A JPS63102383A JP S63102383 A JPS63102383 A JP S63102383A JP 61248833 A JP61248833 A JP 61248833A JP 24883386 A JP24883386 A JP 24883386A JP S63102383 A JPS63102383 A JP S63102383A
- Authority
- JP
- Japan
- Prior art keywords
- barrier layer
- josephson junction
- superconducting
- josephson
- conductive regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 claims abstract description 24
- 230000005668 Josephson effect Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 11
- 239000010955 niobium Substances 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 201000010099 disease Diseases 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
本発明は２つの超伝導電極間にバリア病が挾まれた構造
のジョはフソン接合素子において、バリア層として絶縁
膜中に導電性領域を点在した構造とすることにより、
高周波数特性の優れたジョセフソン接合素子を再現性良
く得ることができるようにしたものである。[Detailed Description of the Invention] [Summary] The present invention provides a structure in which conductive regions are interspersed in an insulating film as a barrier layer in a Fuson junction element having a structure in which a barrier disease is sandwiched between two superconducting electrodes. By doing so, it is possible to obtain a Josephson junction element with excellent high frequency characteristics with good reproducibility.
本発明はジョセフソン接合素子に係り、特にバリア層が
２つの超伝導電極間に挟まれた構造のジョセフソン接合
素子に関する。The present invention relates to a Josephson junction device, and particularly to a Josephson junction device having a structure in which a barrier layer is sandwiched between two superconducting electrodes.
ジョセフソン接合素子（ジョセフソン素子）は、超高速
性のため、高速の論理回路や高速・高感度の検波素子な
どに用いられる。このジョセフソン接合素子を高い周波
数で動作させる場合、素子の静電容量が有害な鋤きをし
、本来の超高速性能を生かせない場合がある。このため
、再現性良く製作できる静電容量の小なるジョセフソン
接合素子が必要とされる。Josephson junction devices (Josephson devices) are used in high-speed logic circuits and high-speed, high-sensitivity detection devices due to their ultra-high speed properties. When this Josephson junction device is operated at high frequencies, the capacitance of the device may create a harmful plow, making it impossible to take advantage of its original ultra-high-speed performance. Therefore, a Josephson junction element with low capacitance that can be manufactured with good reproducibility is required.
第３図は従来のジョセフソン接合素子の一例の斜視図を
示す。同図中、１は超伝導下部電極、２は超伝導上部電
極で、それらの電極間にトンネルバリア３が挾まれてい
る。トンネルバリア３は電子のトンネルが可能な極薄（
例えば数ｎｌ１１）の絶縁膜である。FIG. 3 shows a perspective view of an example of a conventional Josephson junction element. In the figure, 1 is a superconducting lower electrode, 2 is a superconducting upper electrode, and a tunnel barrier 3 is sandwiched between these electrodes. The tunnel barrier 3 is extremely thin (
For example, it is an insulating film of several nl11).
かかる構造のトンネルｙ！のジョセフソン接合素子は、
極ａｔ温に冷却すると共に電極１．２間に電流を流すと
、その電流がしきい直以下では電圧は発生せず超伝導状
態であり、しきい値以上になると電圧が発生して電圧状
態ヘスイッヂする性質をもつことは周知の通りである。A tunnel with such a structure! The Josephson junction element of
When a current is passed between the electrodes 1 and 2 while cooling to an extreme AT temperature, when the current is just below the threshold, no voltage is generated and it is in a superconducting state, and when it exceeds the threshold, a voltage is generated and the voltage state is reached. It is well known that it has the property of switching.
このトンネル型のジョセフソン接合素子は広く用いられ
ている。This tunnel type Josephson junction element is widely used.
この他のジョセフソン接合素子としては、従来より第４
図に示す如き弱結合型のジョセフソン接合素子や、第５
図に示す如きＳＮＳ （スーパー・ノーマル・スーパー
）接合型のジョセフソン接合素子が知られている。Other Josephson junction elements include
A weakly coupled Josephson junction element as shown in the figure or a fifth
An SNS (super normal super) junction type Josephson junction element as shown in the figure is known.
第４図において、４は超伝導体の薄膜で、適当な幅に形
成されており、がっ、くびれ部分５を有する。このジョ
セフソン接合素子は、くびれ部分５により超伝導電極６
ａ及び６ｂが弱く結合されているため、ジョセフソン効
果を示す。In FIG. 4, reference numeral 4 denotes a thin film of superconductor, which is formed to an appropriate width and has a constricted portion 5. This Josephson junction element has a superconducting electrode 6 formed by a constricted portion 5.
Since a and 6b are weakly coupled, the Josephson effect is exhibited.
また、第５図に示すジョセフソン接合素子は、超伝導下
部電極８と超伝導上部電極９との間に、常伝導の金属（
例えば銅、アルミニウム等）１゜が挾まれた構造とされ
ている。このように、金属１０を超伏導電極８，９間に
挾んだＳＮＳ接合型によってもジョセフソン効果を得る
ことができることが知られている。In addition, the Josephson junction element shown in FIG. 5 has a normal conductive metal (
For example, copper, aluminum, etc.) has a structure in which 1° is sandwiched. As described above, it is known that the Josephson effect can also be obtained by the SNS junction type in which the metal 10 is sandwiched between the superconducting electrodes 8 and 9.
しかるに、第３図に示した従来のトンネル型のジョセフ
ソン接合素子はコンデンサの構造となっており、その静
電容Ｓが絶縁膜であるトンネルバリア３の膜厚によって
決まるが、トンネルバリア３は極めて薄いので静電容量
の値が例えば数μＦ／ ｃｉ ＆’ ＩＪ！と大なる値
となり、その結果、高周波数特性が制限されてしまう。However, the conventional tunnel-type Josephson junction element shown in FIG. 3 has a capacitor structure, and its capacitance S is determined by the thickness of the tunnel barrier 3, which is an insulating film. Since it is thin, the capacitance value is, for example, several μF/ci &' IJ! As a result, the high frequency characteristics are limited.
一方、素子の電流を一定とすると、電流密度は素子面積
に反比例して高くなる。そこで、素子の臨界電流密度を
高くして素子面積を小さくすることにより、上記静電容
ωを小さくすることが考えられる。しかし、トンネル型
のジョゼフソン接合素子の電流密度は通常１０２〜１０
３Ａ／Ｃｉであり、高くても１０’Ａ／ｃｊ程度であり
、それ以上の電流密度では通常、良好な特性が得られな
い。On the other hand, if the current in the device is constant, the current density increases in inverse proportion to the device area. Therefore, it is conceivable to reduce the capacitance ω by increasing the critical current density of the element and reducing the element area. However, the current density of tunnel-type Josephson junction devices is usually 102 to 10
The current density is 3A/Ci, and the highest current density is about 10'A/cj, and good characteristics cannot usually be obtained at a current density higher than that.
このため、上記静電容量を小さくするにも限界がある。Therefore, there is a limit to reducing the capacitance.
また、第４図に示した弱結合型のジョセフソン接合素子
でｔまくひれ部分５を作るために、極めて微細な加工が
必要となる上、臨界電流の再現性が悪いため、集積回路
を作るのは極めて困難である。Furthermore, in order to make the T-roll fin portion 5 using the weakly coupled Josephson junction element shown in Fig. 4, extremely fine processing is required and the reproducibility of the critical current is poor, making it difficult to fabricate an integrated circuit. is extremely difficult.
更に、第５図に示したＳＮＳ接合型のジョセフソン接合
素子では、電極８及び９間に流れる電流は常伝導の金属
１０を通るから、金属１ｏをがなり厚くできるが、金属
１０を使用しているので極めて小なる並列抵抗値をもっ
こととなり、高周波検波素子などに使用した場合、伯の
回路とのインピーダンスマツチングができず、実用的で
ない。Furthermore, in the SNS junction type Josephson junction element shown in FIG. Because of this, an extremely small parallel resistance value is required, and when used in a high-frequency detection element, impedance matching with the circuit described above cannot be achieved, making it impractical.
本発明は上記の点に鑑みて創作されたもので、静電容量
が小で、かつ、実用的な抵抗値を有するジョセフソン接
合素子を提供することを目的とする。The present invention was created in view of the above points, and an object of the present invention is to provide a Josephson junction element having a small capacitance and a practical resistance value.
（問題点を解決するための手段〕
第１Ａ、１８図は本発明のジョセフソン接合素子の構造
断面図及びＢ−Ｂ線に沿う横断面図を示ず。同図中、１
１は第１の超伝導電極、１２は第２の超伝導電極、１３
はバリア層である。バリア層１３は絶縁層１４の中に導
電性領域１５が点在された構造とされている。(Means for solving the problem) Figures 1A and 18 do not show a structural cross-sectional view of the Josephson junction element of the present invention and a cross-sectional view taken along the line B-B.
1 is a first superconducting electrode, 12 is a second superconducting electrode, 13
is a barrier layer. The barrier layer 13 has a structure in which conductive regions 15 are scattered within an insulating layer 14 .
超伝導電極１１及び１２は導電性領域１５を介して導電
的に結合されることになる。Superconducting electrodes 11 and 12 will be electrically coupled via conductive region 15 .
（作用）
超伝導電極１１及び１２はバリア層１３を介して結合さ
れており、これによりジョセフソン効果を生ずる。(Function) The superconducting electrodes 11 and 12 are coupled via the barrier layer 13, thereby producing the Josephson effect.
超伝導電極１１及び１２が′４電性領域１５を介して良
好に３４電的な結合が行なわれている場合、バリア層１
３の厚みが従来のトンネルバリア３のそれよりも厚くて
も、ジョセフソン電流は導電性領域１５を通して超伝導
電極１１．１２間に十分な間流れることができる。従っ
て、このバリア層１３の膜圧はトンネルバリア３の膜圧
（通常は３０人〜５０人）に比し、例えば１μｍと極め
て厚くすることができる。When the superconducting electrodes 11 and 12 are well coupled with each other via the 44-electric region 15, the barrier layer 1
Even if the thickness of the tunnel barrier 3 is thicker than that of the conventional tunnel barrier 3, the Josephson current can flow through the conductive region 15 between the superconducting electrodes 11, 12 for a sufficient period of time. Therefore, the film thickness of this barrier layer 13 can be extremely thick, for example, 1 μm, compared to the film thickness of the tunnel barrier 3 (usually 30 to 50 layers).
また、接合全面積に対する導電性領域１５の割合を調整
することにより、臨界電流密度を制御することができる
。Further, by adjusting the ratio of the conductive region 15 to the total area of the junction, the critical current density can be controlled.
第２図（Ａ）〜（Ｃ）は夫々本発明になるジョセフソン
接合素子の一実施例を製造する各過程における構造断面
図を示す。まず、第２図（Ａ）に示す如く、シリコン基
板１７上にスパッタリングによりニオブ（Ｎｂ ）から
なる超伝導電極２０が形成される。シリコン基板１７は
シリコンウェーハ１８上に例えば１０００人程度０厚さ
でＳｉＯ２の酸化膜１９が形成された構造である。また
、超伏Ｓ電極２０の膜厚は例えば３０００八程度である
。次に、上記のＮｂのスパッタリング終了後、同じ装置
で金（Ａｕ ）を極めて薄く（例えば質ω膜厚で１０人
〜２０人程度）蒸着する。これにより、ＡＬＩは第２図
（Ａ）に２１で示ザ如く、超伝導電極２０上に島状に形
成される。FIGS. 2(A) to 2(C) each show a structural cross-sectional view at each step of manufacturing an embodiment of the Josephson junction device according to the present invention. First, as shown in FIG. 2(A), a superconducting electrode 20 made of niobium (Nb) is formed on a silicon substrate 17 by sputtering. The silicon substrate 17 has a structure in which an oxide film 19 of SiO2 is formed on a silicon wafer 18 to a thickness of about 1,000, for example. Further, the film thickness of the super-depressed S electrode 20 is, for example, about 3,000. Next, after the above-mentioned Nb sputtering is completed, gold (Au) is deposited in an extremely thin layer (for example, by about 10 to 20 people in terms of ω film thickness) using the same apparatus. As a result, the ALI is formed in an island shape on the superconducting electrode 20, as shown at 21 in FIG. 2(A).
しかる後に、プラズマ酸化により超伝導゛電極２０を酸
化すると、Ｎｂの酸化膜（例えばＮｂｚＯｓ）２２が、
第２図（８）に示ず如くＡｌｌの蒸着領域２１以外の個
所に１００八〜５００人の厚さで成長される。Ａ１１ｌ
よ酸化されないからである。After that, when the superconducting electrode 20 is oxidized by plasma oxidation, the Nb oxide film (for example, NbzOs) 22 becomes
As shown in FIG. 2(8), the Al layer is grown to a thickness of 1008 to 500 layers in areas other than the Al vapor deposition region 21. A11l
This is because it is not easily oxidized.
次に、上記の蒸着領域２１及び酸化膜２２上からＮｂを
スパッタリングして第２図（Ｃ）に示す如＜Ｎｂからな
る超伝導電極２３が准＋１！１される。Next, Nb is sputtered from above the vapor deposition region 21 and the oxide film 22 to form a superconducting electrode 23 made of Nb as shown in FIG. 2(C).
その後にバターニング等所定の１稈を経てジョセフソン
結合素子が製造される。第２図（Ｃ）中、超伝導電極２
０．２３が前記超伝導電極１１゜１２に相当し、Ａｕの
島状の蒸着領域２１は前記導電性領域１５に相当し、更
に酸化膜２２は前記絶縁層１４に相当する。Thereafter, a Josephson coupling element is manufactured through a predetermined process such as buttering. In Figure 2 (C), superconducting electrode 2
0.23 corresponds to the superconducting electrodes 11.degree.
なお、Ａ１３の蒸着量を変えることにより、蒸着領域２
１の面積を変えることができるので、臨界電流密度の制
御が容易である。In addition, by changing the amount of vapor deposition of A13, the vapor deposition area 2
Since the area of 1 can be changed, the critical current density can be easily controlled.
なお、八〇の代りにＰｔｌを使用してもよい。Note that Ptl may be used instead of 80.
上述の如く、本発明によれば、バリア層の厚さを、従来
のトンネル型のジョセフソン接合素子のトンネルバリア
の厚さに比べて極めて厚くできるので、単位面積当りの
静電容品を従来のトンネル型のジョセフソン接合素子に
比べて極めて小にすることができ、従って高周波数特性
を大幅に向上することかできる。また、臨界電流密度の
制御が容易にできるので、素子のインピーダンスを最適
な値に設定することが容易にでき、更に弱結合型のジョ
セフソン接合素子のような超精密加工を要することはな
く、実用的なジョセフソン接合素子を再現性良く得るこ
とができる等の特長を有するものである。As described above, according to the present invention, the thickness of the barrier layer can be made extremely thicker than that of the tunnel barrier of a conventional tunnel-type Josephson junction element, so that the capacitance per unit area can be made much thicker than that of the conventional tunnel-type Josephson junction element. It can be made much smaller than a tunnel-type Josephson junction element, and therefore its high frequency characteristics can be greatly improved. In addition, since the critical current density can be easily controlled, the impedance of the element can be easily set to an optimal value, and ultra-precision processing unlike weakly coupled Josephson junction elements is not required. It has the advantage of being able to obtain a practical Josephson junction element with good reproducibility.
【図面の簡単な説明】
第１Ａ、１８図は本発明の構造断面図及び横断面図、
第２図（Ａ）〜（Ｃ）は夫々本発明の一実施例の各製造
過程での構造断面図、
第３図乃至第５図は夫々従来のジョセフソン接合素子の
各個を示ず斜視図である。
図において、
１１は第１の超伝導電極、
１２４ま第２の超伝導電極、
１３はバリア層、
１４は絶縁層、
１５は導電性領域、
２０．２３は超伝導領域、
２１は金の蒸着ｇＡ域、
２２は酸化膜である。
代理人 弁理士 井 桁 貞 −。
゛・、二？ン′[Brief Description of the Drawings] Figures 1A and 18 are cross-sectional views of the structure of the present invention, and Figures 2 (A) to (C) are cross-sectional views of the structure of an embodiment of the present invention in each manufacturing process. 3 to 5 are perspective views of conventional Josephson junction elements without showing individual parts. In the figure, 11 is a first superconducting electrode, 124 is a second superconducting electrode, 13 is a barrier layer, 14 is an insulating layer, 15 is a conductive region, 20.23 is a superconducting region, and 21 is gold vapor deposition. In the gA region, 22 is an oxide film. Agent: Patent attorney Sada Igata −.゛・、Two? hmm'
Claims (1)
）との間にバリア層（１３）が挾まれた構造のジョセフ
ソン接合素子であって、 該バリア層（１３）を絶縁層（１４）中に該第１及び第
２の超伝導電極（１１，１２）を導電的に結合する導電
性領域（１５）を点在せしめた構造としたことを特徴と
するジョセフソン接合素子。[Claims] First superconducting electrode (11) and second superconducting electrode (12)
), the barrier layer (13) is interposed between the first and second superconducting electrodes (11) in an insulating layer (14). , 12) interspersed with conductive regions (15).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61248833A JPS63102383A (en) | 1986-10-20 | 1986-10-20 | Josephson junction device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61248833A JPS63102383A (en) | 1986-10-20 | 1986-10-20 | Josephson junction device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63102383A true JPS63102383A (en) | 1988-05-07 |
Family
ID=17184100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61248833A Pending JPS63102383A (en) | 1986-10-20 | 1986-10-20 | Josephson junction device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63102383A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03174781A (en) * | 1988-12-23 | 1991-07-29 | Nippon Steel Corp | Radiation detecting element and josephson element |
| WO1995026575A1 (en) * | 1994-03-25 | 1995-10-05 | The Secretary Of State For Defence | Superconductive junction |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57104283A (en) * | 1980-12-20 | 1982-06-29 | Rikagaku Kenkyusho | Josephson junction element and manufacture thereof |
-
1986
- 1986-10-20 JP JP61248833A patent/JPS63102383A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57104283A (en) * | 1980-12-20 | 1982-06-29 | Rikagaku Kenkyusho | Josephson junction element and manufacture thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03174781A (en) * | 1988-12-23 | 1991-07-29 | Nippon Steel Corp | Radiation detecting element and josephson element |
| US5321276A (en) * | 1988-12-23 | 1994-06-14 | Nippon Steel Corporation | Radiation sensing device and Josephson device |
| WO1995026575A1 (en) * | 1994-03-25 | 1995-10-05 | The Secretary Of State For Defence | Superconductive junction |
| GB2301965A (en) * | 1994-03-25 | 1996-12-18 | Secr Defence | Superconductive junction |
| GB2301965B (en) * | 1994-03-25 | 1998-07-01 | Secr Defence | Superconductive junction |
| US5821556A (en) * | 1994-03-25 | 1998-10-13 | The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland | Superconductive junction |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4554567A (en) | Superconductive integrated circuit incorporating a magnetically controlled interferometer | |
| WO1997034327A1 (en) | Wide josephson junction with asymmetric control lines | |
| US11195982B2 (en) | Qubit frequency tuning structures and fabrication methods for flip chip quantum computing devices | |
| JPS58200586A (en) | Josephson tunnel junction device of niob-insultor-niob and method of producing same | |
| US3737743A (en) | High power microwave field effect transistor | |
| US4366494A (en) | Josephson junction and a method of making the same | |
| JP2978471B2 (en) | Low inductance superconducting integrated circuit and its manufacturing method | |
| JPH098368A (en) | High temperature superconducting jesephson element and fabrication thereof | |
| CN105702849B (en) | Stepped area is covered with superconducting circuit structure of superconduction coating and preparation method thereof | |
| JP3568547B2 (en) | Josephson junction structure | |
| JP3538326B2 (en) | Article including an inductive element having a magnetic thin film | |
| US4494131A (en) | Josephson junction element and method of making the same | |
| JPS63102383A (en) | Josephson junction device | |
| US4430790A (en) | Method of making a Josephson junction | |
| JPS60140885A (en) | Superconductive element ic | |
| JP2730368B2 (en) | Superconducting field effect element and method for producing the same | |
| JPS61201467A (en) | Superconducting transistor integrated circuit | |
| JPS5846197B2 (en) | Josephson junction device and its manufacturing method | |
| JPH05251769A (en) | Connection structure of superconducting current path | |
| JP2680961B2 (en) | Superconducting field effect device and method of manufacturing the same | |
| JP4027504B2 (en) | Single-electron tunnel device having a laminated structure and manufacturing method thereof | |
| JP2680954B2 (en) | Superconducting field effect element | |
| JP2737499B2 (en) | Superconducting field effect element and method for producing the same | |
| JPS59125126A (en) | Josephson logical circuit device | |
| JPH05291637A (en) | Superconductive field effect type element |