JPS63100850U - - Google Patents

Info

Publication number
JPS63100850U
JPS63100850U JP19607286U JP19607286U JPS63100850U JP S63100850 U JPS63100850 U JP S63100850U JP 19607286 U JP19607286 U JP 19607286U JP 19607286 U JP19607286 U JP 19607286U JP S63100850 U JPS63100850 U JP S63100850U
Authority
JP
Japan
Prior art keywords
view
lead
leads
flat
wide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19607286U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP19607286U priority Critical patent/JPS63100850U/ja
Publication of JPS63100850U publication Critical patent/JPS63100850U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Lead Frames For Integrated Circuits (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの考案の一実施例の部分正面図、第
2図はその部分側面図、第3図は同じくその全体
の正面図、第4図はそのプリント基板への取付部
の断面図、第5図は第4図と同部分を方向を変え
て示す断面図、第6図は従来のハイブリツドIC
の斜視図、第7図はその側面図、第8図は同じく
そのリードの斜視図、第9図は他の従来例の破断
側面図、第10図および第11図は各々そのリー
ドの正面図および側面図、第12図はさらに他の
従来例の部分正面図、第13図はその側面図であ
る。 1……電子部品本体、2……リード、3……偏
平幅広部、4……基端偏平部。
FIG. 1 is a partial front view of an embodiment of this invention, FIG. 2 is a partial side view thereof, FIG. 3 is a front view of the entirety thereof, and FIG. 4 is a sectional view of the attachment part to a printed circuit board. Figure 5 is a cross-sectional view of the same part as Figure 4, but in a different direction, and Figure 6 is a conventional hybrid IC.
, FIG. 7 is a side view thereof, FIG. 8 is a perspective view of the lead, FIG. 9 is a cutaway side view of another conventional example, and FIGS. 10 and 11 are front views of the lead. and a side view, FIG. 12 is a partial front view of still another conventional example, and FIG. 13 is a side view thereof. 1... Electronic component body, 2... Lead, 3... Flat wide part, 4... Proximal flat part.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 電子部品本体に複数本配列して突設した各リー
ドを、線材の一部に偏平幅広部を形成してなるも
のとし、前記各リードの偏平幅広部は、これらリ
ードの並び方向に幅広とした電子部品のリード構
造。
A plurality of leads arranged and protruding from the electronic component body are formed by forming a flat wide part in a part of the wire, and the flat wide part of each lead is wide in the direction in which these leads are arranged. Lead structure of electronic components.
JP19607286U 1986-12-19 1986-12-19 Pending JPS63100850U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19607286U JPS63100850U (en) 1986-12-19 1986-12-19

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19607286U JPS63100850U (en) 1986-12-19 1986-12-19

Publications (1)

Publication Number Publication Date
JPS63100850U true JPS63100850U (en) 1988-06-30

Family

ID=31154551

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19607286U Pending JPS63100850U (en) 1986-12-19 1986-12-19

Country Status (1)

Country Link
JP (1) JPS63100850U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015153946A (en) * 2014-02-17 2015-08-24 トヨタ自動車株式会社 Manufacturing method of semiconductor device, and semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5535813U (en) * 1978-08-29 1980-03-07

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5535813U (en) * 1978-08-29 1980-03-07

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015153946A (en) * 2014-02-17 2015-08-24 トヨタ自動車株式会社 Manufacturing method of semiconductor device, and semiconductor device

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