JPS63100833U - - Google Patents
Info
- Publication number
- JPS63100833U JPS63100833U JP19563786U JP19563786U JPS63100833U JP S63100833 U JPS63100833 U JP S63100833U JP 19563786 U JP19563786 U JP 19563786U JP 19563786 U JP19563786 U JP 19563786U JP S63100833 U JPS63100833 U JP S63100833U
- Authority
- JP
- Japan
- Prior art keywords
- barrier
- metal
- shot
- electrode metal
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 2
- 239000004642 Polyimide Substances 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 229920001721 polyimide Polymers 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003909 pattern recognition Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Wire Bonding (AREA)
Description
第１図ａ，ｂはそれぞれ本考案の一実施例のア
ルミ線ボンデング前の平面図と断面図、第２図ａ
，ｂはそれぞれ本考案の他の実施例のボンデング
前の平面図と断面図、第３図ａ，ｂはそれぞれ従
来のボンデング前のシヨツトキダイオードの平面
図と断面図である。
１……シリコン基板、２……エピタキシヤル層
、３……ガードリング、４，５，６……ボンデン
グのパターン認識マーク、７……バリアメタル層
、８，９……電極メタル。
Figures 1a and b are a plan view and a sectional view of an embodiment of the present invention before aluminum wire bonding, and Figure 2a is a
, b are a plan view and a sectional view, respectively, of another embodiment of the present invention before bonding, and FIGS. 3a and 3b are a plan view and a sectional view, respectively, of a conventional shotgun diode before bonding. DESCRIPTION OF SYMBOLS 1... Silicon substrate, 2... Epitaxial layer, 3... Guard ring, 4, 5, 6... Bonding pattern recognition mark, 7... Barrier metal layer, 8, 9... Electrode metal.
Claims (1)
方の面にこれより低濃度のエピタキシヤル層を形
成し、このエピタキシヤル層にシヨツトキ障壁を
有するバリアメタル、さらに電極メタルを形成し
、前記基板の他方の面にオーミツク接続を有する
ように電極メタルを蒸着したシヨツトキバリアダ
イオードにおいて、前記バリアメタル上またはそ
の上の電極メタル上にＳｉＯ２被膜形成用塗布液
またはポリイミド系感光性耐熱コーテイング剤で
形成されたボンデイング位置決め用のマークパタ
ーンを有することを特徴とするシヨツトキバリア
ダイオード。 A lower concentration epitaxial layer is formed on one surface of a high concentration N-type (or P-type) silicon substrate, a barrier metal having a shot barrier and an electrode metal are formed on this epitaxial layer, and the substrate In a shot barrier diode in which an electrode metal is deposited on the other surface of the barrier metal so as to have an ohmic connection, a coating solution for forming a SiO 2 film or a polyimide-based photosensitive heat-resistant coating agent is applied to the barrier metal or the electrode metal thereon. A shot barrier diode characterized by having a bonding positioning mark pattern formed therein.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986195637U JPH0526745Y2 (en) | 1986-12-18 | 1986-12-18 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986195637U JPH0526745Y2 (en) | 1986-12-18 | 1986-12-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63100833U true JPS63100833U (en) | 1988-06-30 |
| JPH0526745Y2 JPH0526745Y2 (en) | 1993-07-07 |
Family
ID=31153704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986195637U Expired - Lifetime JPH0526745Y2 (en) | 1986-12-18 | 1986-12-18 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0526745Y2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016103335A1 (en) * | 2014-12-24 | 2016-06-30 | 株式会社日立製作所 | Semiconductor device and power conversion device using same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6243647A (en) * | 1985-08-21 | 1987-02-25 | Konishiroku Photo Ind Co Ltd | Photosensitive printing plate |
-
1986
- 1986-12-18 JP JP1986195637U patent/JPH0526745Y2/ja not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6243647A (en) * | 1985-08-21 | 1987-02-25 | Konishiroku Photo Ind Co Ltd | Photosensitive printing plate |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016103335A1 (en) * | 2014-12-24 | 2016-06-30 | 株式会社日立製作所 | Semiconductor device and power conversion device using same |
| JPWO2016103335A1 (en) * | 2014-12-24 | 2017-11-09 | 株式会社日立製作所 | Semiconductor device and power conversion device using the same |
| US10109549B2 (en) | 2014-12-24 | 2018-10-23 | Hitachi, Ltd. | Semiconductor device and power conversion device using same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0526745Y2 (en) | 1993-07-07 |
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