JPS63100175A - Cooler for cathode - Google Patents
Cooler for cathodeInfo
- Publication number
- JPS63100175A JPS63100175A JP24346286A JP24346286A JPS63100175A JP S63100175 A JPS63100175 A JP S63100175A JP 24346286 A JP24346286 A JP 24346286A JP 24346286 A JP24346286 A JP 24346286A JP S63100175 A JPS63100175 A JP S63100175A
- Authority
- JP
- Japan
- Prior art keywords
- backing plate
- cathode
- target
- cooling
- cooling water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001816 cooling Methods 0.000 claims abstract description 13
- 239000000498 cooling water Substances 0.000 claims abstract description 13
- 238000005192 partition Methods 0.000 claims abstract description 8
- 238000004544 sputter deposition Methods 0.000 claims abstract description 8
- 230000000694 effects Effects 0.000 abstract description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- -1 argon ions Chemical class 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 1
- ZEKANFGSDXODPD-UHFFFAOYSA-N glyphosate-isopropylammonium Chemical compound CC(C)N.OC(=O)CNCP(O)(O)=O ZEKANFGSDXODPD-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
従来の技術
従来、スパッタリングのカソード部分は、例えば特公昭
５３−１９３１９号公報に示されているように、第３図
のようになっていた。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application Prior Art Conventionally, a cathode portion for sputtering has been as shown in FIG. 3, as shown in, for example, Japanese Patent Publication No. 19319/1983.
以下、図面を参照しながら従来のスパッタリング装置に
ついて説明する。第３図において、２６は磁石２１．ヨ
ーク２２を固定するカソード本体、２４はターゲット２
３ｆＪ：メタルポンディングするためのバッキングプレ
ー）、２６ｆｌプラズマシールド、２７はターゲットを
冷却するための冷却水の入口、２８は冷却水出口である
。２９は、カソード本体２６及び基板ホルダー３１を支
持するチャンバーである。また、３２はスパッタリング
により膜が形成される基板で、基板ホルダー３１に装着
されている。３３は真空ポンプ３４とチャンバー２９ｉ
Ｊ断するパルプである。３４は、アルゴンガス導入口３
５とチャンバー２９を遮断するバルブである。A conventional sputtering apparatus will be described below with reference to the drawings. In FIG. 3, 26 is a magnet 21. The cathode body that fixes the yoke 22, 24 is the target 2
3fJ: backing play for metal pounding), 26fl plasma shield, 27 is a cooling water inlet for cooling the target, and 28 is a cooling water outlet. 29 is a chamber that supports the cathode body 26 and the substrate holder 31. Further, 32 is a substrate on which a film is formed by sputtering, and is mounted on the substrate holder 31. 33 is a vacuum pump 34 and a chamber 29i
It is a pulp that is cut into J. 34 is argon gas inlet 3
5 and the chamber 29.
以下その動作について説明する。チャンバー２９内全真
空ポンプ３４によシ１０−６Ｔｏｒｒ台の真空度まで排
気する。その後アルゴンガス導入口３６よりガスを導入
して５ Ｘ １０ Ｔｏｒｒ 程度に設定し、カソ
ード本体２４へ電源３０によりＤＣ又はＲＦの電圧を印
加する。これにより、チャンバー２９内にプラズマが発
生し、そのため、アルゴンイオンが発生する。また、磁
石２１の磁界３１によりプラズマ密度の高い部分が発生
し、アルゴンイオンのターゲット２３への衝突量が増加
し、基板３２へ膜が形成される。The operation will be explained below. The entire chamber 29 is evacuated to a vacuum level of 10 -6 Torr using the vacuum pump 34 . Thereafter, gas is introduced through the argon gas inlet 36 and set to approximately 5×10 Torr, and a DC or RF voltage is applied to the cathode body 24 by the power source 30. As a result, plasma is generated within the chamber 29, and therefore argon ions are generated. In addition, a region with high plasma density is generated by the magnetic field 31 of the magnet 21, the amount of argon ions colliding with the target 23 increases, and a film is formed on the substrate 32.
発明が解決しようとする問題点
このカソードにおいて、水を流す持直径１０Ｗｓ程度の
気泡が数個発生する。そして、それは時間が経過しても
なくなることはない。また、この気泡が発生することに
より、ターゲットの冷却効率が低下するため、合金ター
ゲットを用いた場合には、組成比の安定性が悪くなり、
酸素を用いた反応性のスパッタを行う場合には、成膜速
度の安定性が悪くなる。Problems to be Solved by the Invention In this cathode, several bubbles with a diameter of about 10 Ws are generated through which water flows. And it won't go away over time. In addition, the generation of these bubbles reduces the cooling efficiency of the target, resulting in poor stability of the composition ratio when using an alloy target.
When performing reactive sputtering using oxygen, the stability of the film formation rate deteriorates.
問題点を解決する九めの手段
上記問題点を解決するために本発明のカソード冷却方法
は、ターゲラ）（Ｄ装着されていないバッキングプレー
トの面に傾斜をつけ、その傾斜の高い部分にたまった気
泡を外部へ抜くための仕切り板を設けたものである。Ninth Means for Solving the Problems In order to solve the above problems, the cathode cooling method of the present invention is such that the surface of the backing plate that is not attached is sloped, and the cathode cooling method is designed to reduce the amount of water that accumulates on the high sloped parts. A partition plate is provided to remove air bubbles to the outside.
作 用 この技術手段による作用は次のようになる。For production The effect of this technical means is as follows.
すなわち、バッキングプレートの裏面へ傾斜ヲつけたこ
とによシ、水を導入すると、傾斜になっている部分で、
磁石から一番離れている部分に気泡が集中する。そこへ
仕切シ板を設けることにより気泡がそこを通って逃げて
いく。従って、カソード内の気泡は完全に抜けきれるこ
とになる。In other words, by creating a slope on the back surface of the backing plate, when water is introduced, the sloped part
Air bubbles concentrate in the part farthest from the magnet. By providing a partition plate there, air bubbles can escape through it. Therefore, the air bubbles inside the cathode can be completely removed.
実施例
以下、本発明の実施例について図面を参照しながら説明
する。EXAMPLES Hereinafter, examples of the present invention will be described with reference to the drawings.
第１図は本発明の第１の実施例におけるカソードの冷却
方法を示す。第１図において、１はバンキングプレート
３にメタルポンディングされたターゲット２の表面上に
、平行磁界４を発生させるための磁石である。６はバッ
キングプレート３ｔ−装着するためのカソード本体、ｅ
は冷却水入口、７は冷却水出口、７ａは気泡を抜くため
の仕切り板としてのパイプ、８は磁石１のヨークである
。FIG. 1 shows a method of cooling a cathode in a first embodiment of the present invention. In FIG. 1, reference numeral 1 designates a magnet for generating a parallel magnetic field 4 on the surface of a target 2 metal bonded to a banking plate 3. 6 is the backing plate 3t - the cathode body for mounting, e
7 is a cooling water inlet, 7 is a cooling water outlet, 7a is a pipe serving as a partition plate for removing air bubbles, and 8 is a yoke of the magnet 1.
以上のように構成されたスパッタリング装置のカソード
冷却方法について説明する。冷却水人口６より水を導入
すると、冷却水出ロアのパイプ７ａが磁石１の上面より
も低い場合、冷却水はバッキングプレート３に触れるこ
となく冷却水出ロアより流れ出てしまう。そのため、第
１図のようなパイプを装着する。これを装着することに
より、バッキングプレート３の傾斜の左側にたまっな気
泡は、完全に押し出され、バッキングプレート３の裏面
部分に気泡のない、冷却が可能となる。A method for cooling the cathode of the sputtering apparatus configured as above will be described. When water is introduced from the cooling water outlet 6, if the pipe 7a of the lower cooling water outlet is lower than the upper surface of the magnet 1, the cooling water flows out from the lower cooling water outlet without touching the backing plate 3. Therefore, a pipe as shown in Figure 1 is installed. By installing this, the air bubbles accumulated on the left side of the slope of the backing plate 3 are completely pushed out, and the back surface portion of the backing plate 3 can be cooled without air bubbles.
第２図はバッキングプレートの裏面を円錐状にしたもの
である。これにより、気泡をカソードの外周へ持ってい
くことができ、さらに１円筒状仕切り板９を設けること
により、気泡を完全に取り除くことが可能となった。FIG. 2 shows a backing plate with a conical back surface. This allows air bubbles to be brought to the outer periphery of the cathode, and by providing one cylindrical partition plate 9, it becomes possible to completely remove air bubbles.
発明の効果
以上のように１本発明のカソードの冷却方法は、完全に
気泡を抜き取ることができるため、ターゲットの冷却効
率が良くなシ、成膜速度が安定する。Effects of the Invention As described above, the cathode cooling method of the present invention can completely remove air bubbles, so the target cooling efficiency is improved and the film formation rate is stabilized.
さらに合金ターゲラトラ用いた場合においても、各々の
成分のスパッタ速度が安定するため、組成比も安定する
。また、酸素を用いた反応性スパッタの場合にも酸素と
ターゲット材料が結合する確率が少なくなり、よシ成膜
速度が安定する。Furthermore, even when an alloy target rattler is used, the sputtering rate of each component is stabilized, so the composition ratio is also stabilized. Furthermore, in the case of reactive sputtering using oxygen, the probability that oxygen and the target material will bond is reduced, and the film formation rate becomes more stable.
第１図は本発明の第１の実施例におけるカソード・・・
・・磁石、２・・・・・・ターゲット、３・・・・・・
バッキングプレート、４・・・・・・平行磁界、５・・
・・・・カソード本体、６・・・・・・冷却水入口、７
・・・・・・冷却水出口、８・・・・・・ヨーク、９・
・・・・・仕切板。FIG. 1 shows the cathode in the first embodiment of the present invention...
...Magnet, 2...Target, 3...
Backing plate, 4... Parallel magnetic field, 5...
...Cathode body, 6...Cooling water inlet, 7
......Cooling water outlet, 8...Yoke, 9.
...Partition board.
Claims (1)
状のカソード本体と、前記カソード本体の上部を密閉す
るように配されたバッキングプレートと、前記バッキン
グプレートの上面に固定されたターゲットと、前記ター
ゲットの表面上に磁界を発生させる手段とからなるスパ
ッタリング用のカソードにおいて、前記バッキングプレ
ートの裏面に傾斜を付け、前記傾斜の高い部分にたまっ
た気泡を外部へ抜くための仕切り板を設けた、カソード
の冷却装置。a container-shaped cathode body with an open top and having a cooling water inlet and a cooling water outlet; a backing plate arranged to seal the top of the cathode body; and a target fixed to the upper surface of the backing plate; In the sputtering cathode comprising means for generating a magnetic field on the surface of the target, the back surface of the backing plate is sloped, and a partition plate is provided for extracting air bubbles accumulated in the high slope part to the outside. , cathode cooling system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24346286A JPS63100175A (en) | 1986-10-14 | 1986-10-14 | Cooler for cathode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24346286A JPS63100175A (en) | 1986-10-14 | 1986-10-14 | Cooler for cathode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63100175A true JPS63100175A (en) | 1988-05-02 |
Family
ID=17104245
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24346286A Pending JPS63100175A (en) | 1986-10-14 | 1986-10-14 | Cooler for cathode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63100175A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5569361A (en) * | 1995-03-06 | 1996-10-29 | Sony Corporation | Method and apparatus for cooling a sputtering target |
-
1986
- 1986-10-14 JP JP24346286A patent/JPS63100175A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5569361A (en) * | 1995-03-06 | 1996-10-29 | Sony Corporation | Method and apparatus for cooling a sputtering target |
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