JPH024124Y2 - - Google Patents
Info
- Publication number
- JPH024124Y2 JPH024124Y2 JP1982151138U JP15113882U JPH024124Y2 JP H024124 Y2 JPH024124 Y2 JP H024124Y2 JP 1982151138 U JP1982151138 U JP 1982151138U JP 15113882 U JP15113882 U JP 15113882U JP H024124 Y2 JPH024124 Y2 JP H024124Y2
- Authority
- JP
- Japan
- Prior art keywords
- target
- backing plate
- sputtered
- sputtering
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005477 sputtering target Methods 0.000 claims description 12
- 239000013077 target material Substances 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 238000005530 etching Methods 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Description
【考案の詳細な説明】
(1) 考案の技述分野
本考案はスパツタ用ターゲツトに係り、特にプ
ラズマエツチング装置等に用いる被エツチング材
を得るスパツタ用ターゲツトに関する。[Detailed Description of the Invention] (1) Technical Field of the Invention The present invention relates to a sputtering target, and more particularly to a sputtering target for obtaining a material to be etched for use in a plasma etching apparatus or the like.
(2) 技術の背景
半導体集積回路では微細マスクを用いて半導体
材料を１ミクロンから更にサブミクロン（10分の
数ミクロン）までのエツチング加工が必要となり
近時ドライエツチングと呼ばれるプラズマエツチ
ング装置等が開発されている。このようなエツチ
ング装置では従来の湿式のエツチング方法では問
題でなかつた種々の問題があり、その１つにスパ
ツタされた試料をドライエツチングする際の金属
汚染の問題が提示され、種々の解決方法が提案さ
ている。(2) Background of the technology Semiconductor integrated circuits require etching of semiconductor materials from 1 micron to submicron (several tenths of a micron) using a fine mask, and recently plasma etching equipment called dry etching has been developed. has been done. Such etching equipment has various problems that did not occur with conventional wet etching methods, one of which is the problem of metal contamination when dry etching a sputtered sample, and various solutions have been proposed. It has been proposed.
(3) 従来技術と問題点
上述の問題点を明確にするため第１図及至第３
図について従来のドライエツチング用の被エツチ
ング材を得るためのスパツタ装置及び該装置に用
いられるバツキングプレートとターゲツトについ
て説明する。(3) Prior art and problems In order to clarify the above-mentioned problems, Figs.
A conventional sputtering device for obtaining a material to be etched for dry etching and a backing plate and target used in the device will be explained with reference to the drawings.
第１図は従来のドライエツチング用の被エツチ
ング材を得るためのスパツタ装置の概念図であり
ベルジヤ１は上部に蓋２を有し、弁３を介して真
空ポンプに連通し、ベルジヤ１内を真空状態とす
るように排気４される。該ベルジヤ１内にはアル
ゴン（Ar）並びに酸素ガス（O2）等を弁５，６
を通して注入する。 FIG. 1 is a conceptual diagram of a conventional sputtering device for obtaining etched materials for dry etching. A bell gear 1 has a lid 2 on the top, and communicates with a vacuum pump through a valve 3, and the interior of the bell gear 1 is It is evacuated 4 to create a vacuum state. Inside the bell gear 1, argon (Ar), oxygen gas (O 2 ), etc. are supplied through valves 5 and 6.
Inject through.
更に、ベルジヤ１内にはサブストレートホルダ
７が配設され、該サブストレートホルダは回転軸
８に固定され、ベルジヤ１外からモータ等で矢印
９で示すように一定に回転するようになされる。
該サブストレートホルダ７上にはガラス等よりな
る試料、すなわち被スパツタ材１０が載置され、
バツキングプレート１１上には被スパツタ材１０
にスパツタすべき例えばクロム（Cr）等のター
ゲツト１２を溶着させ、該バツキングプレートに
数100Vのマイナス電圧を電圧源１３より印加す
る。なお、チヤンバー１は接地電位１４に落され
た状態となす。 Further, a substrate holder 7 is disposed inside the bell gear 1, and the substrate holder is fixed to a rotating shaft 8 and is constantly rotated as shown by an arrow 9 by a motor or the like from outside the bell gear 1.
A sample made of glass or the like, that is, a material to be sputtered 10 is placed on the substrate holder 7,
On the bucking plate 11 is a material 10 to be sputtered.
A target 12 such as chromium (Cr) to be sputtered is welded to the backing plate, and a negative voltage of several hundred volts is applied from a voltage source 13 to the backing plate. Note that the chamber 1 is in a state where it is lowered to the ground potential 14.
上記構造において、バツキングプレートにマイ
ナス電圧を印加するとボデー（チヤンバー）アー
ス間で放電が発生してチヤンバー内でプラズマ状
態となり、チヤンバーの雰囲気中に導入したアル
ゴンがイオン化され、マイナス電位に保持された
ターゲツト１２に衝突したときのシヨツクによつ
てCrが放出されて被スパツタ材１０にスパツタ
される。エツチング等の場合には被エツチング材
として利用する上述のような被スパツタ材１０を
従来のウエツトエツチングのように酸の水溶液で
エツチングする場合は特に問題は生じないが最近
多く用いられるようになつたドライエツチング等
によるとエツチング時間が異常に長くなり、最悪
の場合はエツチングされない等の弊害を生じた。 In the above structure, when a negative voltage is applied to the bucking plate, a discharge occurs between the body (chamber) and ground, creating a plasma state within the chamber, and the argon introduced into the atmosphere of the chamber is ionized and maintained at a negative potential. Cr is released by the shock when it collides with the target 12 and is spattered onto the sputtered material 10. In the case of etching, etc., there is no particular problem when etching the above-mentioned sputtered material 10, which is used as the material to be etched, with an acid aqueous solution as in conventional wet etching, but recently it has been used more and more. However, dry etching and the like resulted in an abnormally long etching time, and in the worst case, there were problems such as no etching.
これらの問題を種々検討した結果、第２図及び
第３図に示す如き理由によるものと判明した。第
２図及び第３図は第１図に示すバツキングプレー
ト１１とターゲツト材１２の拡大側断面図であ
り、通常バツキングプレート１１の形状は円盤状
で下面に冷却パイプ１５をはわせてバツキングプ
レート１１を冷却させ、更にターゲツト材１２と
して例えばクロームを選択してインジエーム等の
金属１６を用いてバツキングプレート１１とター
ゲツト材１２とを一体に溶着させた構造であり、
バツキングプレート１１としては一般に銅等が用
いられている。第２図の場合、バツキングプレー
ト１１とターゲツト材１２の直径が同一径で溶着
されているためにイオン化したアルゴンがマイナ
ス電位のバツキングプレート１１の周辺部１７に
当つて銅の分子を放出させ被スパツタ材１０中に
純粋なクロームだけがスパツタされず銅もスパツ
タされた試料１０が得られる。第３図の場合は、
バツキングプレート１１にターゲツト材１２をイ
ンジウム等の金属１６を用いて溶着させるときに
ずれて固定されて１mm程度のギヤツプＧを生じた
ときの側断面図で、この場合はインジウム金属１
６にもすなわちギヤツプ部分１８にイオン化され
たアルゴンが当つてインジウム分子を放出する。
この他、バツキングプレートは純粋な銅だけでな
く鉄等の不純物を含んでいるのでこれらの分子も
放出されて被スパツタ材にスパツタされることに
なる。 As a result of various studies on these problems, it was found that the reasons were as shown in FIGS. 2 and 3. 2 and 3 are enlarged side sectional views of the backing plate 11 and target material 12 shown in FIG. It has a structure in which the backing plate 11 is cooled, the backing plate 11 and the target material 12 are welded together using a metal 16 such as ingeam, for example, chrome is selected as the target material 12,
The backing plate 11 is generally made of copper or the like. In the case of Fig. 2, since the backing plate 11 and the target material 12 are welded to have the same diameter, ionized argon hits the peripheral part 17 of the backing plate 11, which has a negative potential, and releases copper molecules. A sample 10 is obtained in which not only pure chromium but also copper is sputtered in the sputtered material 10. In the case of Figure 3,
This is a side sectional view when the target material 12 is welded to the backing plate 11 using a metal 16 such as indium, and the target material 12 is deviated and fixed, resulting in a gap G of about 1 mm.
6, that is, the gap portion 18, is also hit by ionized argon and releases indium molecules.
In addition, since the backing plate contains not only pure copper but also impurities such as iron, these molecules are also released and sputtered onto the material to be sputtered.
このような銅等の不純物を含んだものをエツチ
ングするとドライエツチングし難い欠点のあるこ
とが判明した。 It has been found that dry etching is difficult when etching materials containing impurities such as copper.
(4) 考案の目的
本考案は上記従来の欠点に鑑み、バツキングプ
レートの周辺部がスパツタされないようにしたス
パツタ用ターゲツトを得ることでドライエツチン
グし易い被スパツタ材を得ることを目的とするも
のである。(4) Purpose of the invention In view of the above-mentioned drawbacks of the conventional method, the object of the present invention is to obtain a sputtering target that prevents sputtering around the backing plate, thereby making it possible to obtain a sputtered material that is easy to dry-etch. It is.
(5) 考案の構成
本考案の特徴とするところは、バツキングプレ
ートに溶着させたスパツタ用ターゲツトに電圧を
加えて試料にターゲツト材を蒸着させるようにし
たスパツタ装置に用いられるスパツタ用ターゲツ
トであつて、該ターゲツトの直径を該バツキング
プレート直径より大きく選択して該バツキングプ
レートの上面及び外周部を覆つたことにある。(5) Structure of the invention The feature of the invention is that it is a sputtering target that is used in a sputtering apparatus, in which a voltage is applied to the sputtering target welded to a backing plate to deposit a target material onto a sample. The diameter of the target is selected to be larger than the diameter of the backing plate to cover the upper surface and outer periphery of the backing plate.
(6) 考案の実施例
以下、本考案の実施例を第４図ａ，ｂ及び第５
図について説明する。(6) Examples of the invention Examples of the invention are shown below in Figures 4a, b and 5.
The diagram will be explained.
第４図ａはバツキングプレート１１とターゲツ
ト材１２とを一体に溶着したスパツタ用ターゲツ
トの平面図、第４図ｂは側断面図を示すものであ
る。同図に明らかなように、本実施例では、ター
ゲツト１２の直径をバツキングプレート１１の直
径よりも大きくすると共に、バツキングプレート
１１の外周部分のスパツタされる部分１７を覆う
ようにターゲツト材１２の外周部を２〜３mm突出
させて盆状のターゲツトを構成させる。突出部１
２ａの高さｈは２〜３mmでよく、厚みｔは1.5〜
２mm程度でよいターゲツト１２の厚さｄは通常６
mm程度であるが、従来でも純粋なクロームのター
ゲツト１２を得るには円柱状の不純物部分を含
む、上下を切り捨てて加工するために材料の増加
は無視できる程度である。 FIG. 4a shows a plan view of a sputtering target in which a backing plate 11 and a target material 12 are welded together, and FIG. 4b shows a side sectional view. As is clear from the figure, in this embodiment, the diameter of the target 12 is made larger than the diameter of the backing plate 11, and the target material 12 is spread so as to cover the sputtered portion 17 on the outer periphery of the backing plate 11. The outer periphery of the target is made to protrude by 2 to 3 mm to form a tray-shaped target. Projection part 1
The height h of 2a may be 2 to 3 mm, and the thickness t may be 1.5 to 3 mm.
The thickness d of the target 12, which should be about 2 mm, is usually 6
The increase in the amount of material is negligible since conventionally, to obtain a pure chromium target 12, the top and bottom, including the cylindrical impurity portion, are cut off.
このように盆状に形成或いは加工したターゲツ
ト１２をバツキングプレート１１の上面に嵌着さ
せて溶着させればよい。 The target 12 thus formed or processed into a tray shape may be fitted onto the upper surface of the backing plate 11 and welded.
第５図は本考案の他の実施例を示す斜視図であ
り、ターゲツト１２の直径φ1をバツキングプレ
ート１１の直径φ2より大に選択してバツキング
プレートがスパツタされる部分１７を上面より覆
つてイオン化されたアルゴンが当らないようにし
たものである。 FIG. 5 is a perspective view showing another embodiment of the present invention, in which the diameter φ 1 of the target 12 is selected to be larger than the diameter φ 2 of the bucking plate 11, and the sputtered portion 17 of the backing plate is placed on the upper surface. It is covered to prevent ionized argon from hitting it.
第４図ａ，ｂではバツキングプレート１１の外
周部分の上面のみを突出した縁部で覆つたが、バ
ツキングプレート１１の高さＨは10mm程度である
ので外周部すべてをターゲツト１２の突部１２ａ
で覆つてもよいことは明らかである。 In FIGS. 4a and 4b, only the upper surface of the outer periphery of the bucking plate 11 is covered with the protruding edge, but since the height H of the bucking plate 11 is approximately 10 mm, the entire outer periphery is covered with the protrusion of the target 12. 12a
It is clear that it can be covered with
(7) 考案の効果
以上、詳細に説明したように、本考案のスパツ
タ用ターゲツトによればバツキングプレートのス
パツタされる部分が完全に純粋なターゲツトで覆
れているために、不純物金属が放出されず試料へ
の金属汚染がないためにドライエツチングし易い
被スパツタ材を得ることができてその実用的効果
は大きい。(7) Effects of the invention As explained above in detail, according to the sputtering target of the present invention, since the part of the bucking plate to be sputtered is completely covered with pure target, impurity metals are not released. Since there is no metal contamination on the sample, it is possible to obtain a material to be sputtered that is easy to dry-etch, which has a great practical effect.
第１図は従来のスパツタ装置の概略図、第２図
及び第３図は第１図のスパツタ装置に用いられる
ターゲツトとバツキングプレートの側断面図、第
４図ａは本考案のスパツタ用ターゲツトの平面
図、第４図ｂは第４図ａの側断面図、第５図は本
考案のスパツタ用ターゲツトの他の実施例を示す
斜視図である。
１……チヤンバー、２……蓋、３，５，６……
弁、７……サブストレートホルダー、８……回転
軸、１０……被スパツタ材、１１……バツキング
プレート、１２……ターゲツト、１２ａ……突出
部、１３……電圧源、１５……冷却パイプ、１６
……ボンデング用金属、１７……外周部。
FIG. 1 is a schematic diagram of a conventional sputtering device, FIGS. 2 and 3 are side sectional views of the target and backing plate used in the sputtering device of FIG. 1, and FIG. 4a is a sputtering target of the present invention. 4b is a side sectional view of FIG. 4a, and FIG. 5 is a perspective view showing another embodiment of the sputtering target of the present invention. 1...chamber, 2...lid, 3,5,6...
Valve, 7... Substrate holder, 8... Rotating shaft, 10... Material to be sputtered, 11... Backing plate, 12... Target, 12a... Projection, 13... Voltage source, 15... Cooling pipe, 16
... Metal for bonding, 17 ... Outer periphery.
Claims (1)
ーゲツトに電圧を加えて試料にターゲツト材を蒸
着させるようにしたスパツタ装置に用いられるス
パツタ用ターゲツトであつて、該ターゲツトの直
径を該バツキングプレート直径より大きく選択し
て該バツキングプレートの上面及び外周部を覆つ
てなることを特徴とするスパツタ用ターゲツト。 A sputtering target used in a sputtering device that deposits a target material onto a sample by applying voltage to a sputtering target welded to a backing plate, wherein the diameter of the target is selected to be larger than the diameter of the backing plate. 1. A sputtering target, comprising: a top surface and an outer periphery of the backing plate.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15113882U JPS5956738U (en) | 1982-10-05 | 1982-10-05 | Target for sputtering |
| EP83306022A EP0106623B1 (en) | 1982-10-05 | 1983-10-05 | Sputtering apparatus |
| DE8383306022T DE3381593D1 (en) | 1982-10-05 | 1983-10-05 | SPRAYING DEVICE. |
| US06/539,180 US4569745A (en) | 1982-10-05 | 1983-10-05 | Sputtering apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15113882U JPS5956738U (en) | 1982-10-05 | 1982-10-05 | Target for sputtering |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5956738U JPS5956738U (en) | 1984-04-13 |
| JPH024124Y2 true JPH024124Y2 (en) | 1990-01-31 |
Family
ID=30335006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15113882U Granted JPS5956738U (en) | 1982-10-05 | 1982-10-05 | Target for sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5956738U (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10325763B2 (en) * | 2017-01-20 | 2019-06-18 | Applied Materials, Inc. | Physical vapor deposition processing systems target cooling |
| US10685821B2 (en) | 2017-08-18 | 2020-06-16 | Applied Materials, Inc. | Physical vapor deposition processing systems target cooling |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5061382A (en) * | 1973-10-02 | 1975-05-26 |
-
1982
- 1982-10-05 JP JP15113882U patent/JPS5956738U/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5061382A (en) * | 1973-10-02 | 1975-05-26 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5956738U (en) | 1984-04-13 |
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