JPS6298506A - Formation of transparent electrode substrate - Google Patents

Formation of transparent electrode substrate

Info

Publication number
JPS6298506A
JPS6298506A JP23894785A JP23894785A JPS6298506A JP S6298506 A JPS6298506 A JP S6298506A JP 23894785 A JP23894785 A JP 23894785A JP 23894785 A JP23894785 A JP 23894785A JP S6298506 A JPS6298506 A JP S6298506A
Authority
JP
Japan
Prior art keywords
transparent electrode
electrode film
substrate
film
resistance value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23894785A
Other languages
Japanese (ja)
Inventor
山梨 文明
星野 敏明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alps Alpine Co Ltd
Original Assignee
Alps Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co Ltd filed Critical Alps Electric Co Ltd
Priority to JP23894785A priority Critical patent/JPS6298506A/en
Publication of JPS6298506A publication Critical patent/JPS6298506A/en
Pending legal-status Critical Current

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Landscapes

  • Liquid Crystal (AREA)
  • Surface Treatment Of Glass (AREA)
  • Chemically Coating (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 「技術分野」 本発明は、例えば液晶表示素子などの基板として利用さ
れる透明電極膜を有する基板(以下、透明電極基板とす
る)の製造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a method for manufacturing a substrate having a transparent electrode film (hereinafter referred to as a transparent electrode substrate) used as a substrate for, for example, a liquid crystal display element.

「従来技術およびその問題点」 ガラスやセラミックスなどの絶縁基板上に形成したイン
ジウ、ム、カドミウム、スズ、アンチモンなどの金属酸
化物被膜は、透明で良好な導電性を示すことがよく知ら
れている。したがって、この透明導電性被膜は1例えば
液晶表示素子、エレクトロクロミック素子、エレクトロ
ルミネッセンス素子、半導体素子などの透明電極膜とし
て利用されている。
"Prior Art and its Problems" It is well known that metal oxide films such as indium, mu, cadmium, tin, and antimony formed on insulating substrates such as glass and ceramics are transparent and exhibit good conductivity. There is. Therefore, this transparent conductive film is used as a transparent electrode film for, for example, liquid crystal display elements, electrochromic elements, electroluminescent elements, semiconductor elements, and the like.

近年、上記のような透明電極膜として、より面積抵抗値
の低いものが要求されるようになってきた。例えば液晶
表示素子の場合、ゲーム、電卓等の液晶表示素子に要求
される透明電極膜はその面積抵抗値が数にΩ/口でよか
ったが、車載用のパネルドツトマトリックスや液晶テレ
ビ等に応用されるに従い、面積抵抗値の非常に低いもの
が要求されるようになってきた。
In recent years, transparent electrode films such as those described above have been required to have lower sheet resistance values. For example, in the case of liquid crystal display elements, the transparent electrode film required for liquid crystal display elements for games, calculators, etc. had a sheet resistance value of just a few ohms/mouth, but it has not been applied to dot matrix panels for cars, liquid crystal televisions, etc. As the technology continues to grow, products with extremely low sheet resistance values have come to be required.

従来、上記のような透明電極膜は、例えば真空4着法、
スパッタリング法、化学スプレー法、スクリーン印刷法
、浸漬法などの方法により形成されていた。この透明電
極上には、配向膜、絶縁膜などの被膜が形成されること
もある。
Conventionally, the transparent electrode film as described above has been produced by, for example, the vacuum four-layer method,
It was formed by methods such as sputtering, chemical spraying, screen printing, and dipping. A film such as an alignment film or an insulating film may be formed on the transparent electrode.

しかしながら、透明電極膜を形成した後、例えばポリイ
ミド前駆体、ポリビニルアルコールなどの配向剤を塗布
し、熱処理を行なって配向膜を形成すると2熱処理前に
比べて透明電極膜の面積抵抗値が約1.2〜2倍に上昇
してしまうという問題が生じていた。このことは、配向
膜以外の膜、例えば絶縁膜などの形成においても、熱処
理を伴なう場合には同様であった。このため、目的とす
る抵抗値を得るには、熱処理による面積抵抗値の低下を
みこして、より面積抵抗値が低くなるような材料を用い
なければならず、材料のコストアップとなっていた。
However, after forming a transparent electrode film, if an alignment agent such as a polyimide precursor or polyvinyl alcohol is applied and a heat treatment is performed to form an alignment film, the sheet resistance value of the transparent electrode film will decrease by about 1 compared to before the heat treatment. A problem has arisen in which the value increases by 2 to 2 times. This also applies to the formation of films other than alignment films, such as insulating films, when heat treatment is involved. Therefore, in order to obtain the desired resistance value, it is necessary to use a material that has a lower sheet resistance value by taking into account the reduction in sheet resistance value due to heat treatment, which increases the cost of the material.

「発明の目的」 本発明の目的は、上記従来技術の問題点を解決し、より
低い面積抵抗値の透明電極膜が得られるようにした透明
電極基板の形成方法を提供することにある。
OBJECT OF THE INVENTION An object of the present invention is to provide a method for forming a transparent electrode substrate that solves the problems of the prior art described above and allows a transparent electrode film with a lower sheet resistance value to be obtained.

「発明の構成」 本発明の透明電極基板の形成方法は、基板上に酸化イン
ジウムに酸化スズをドーピングした透明電極膜を形成し
、この電極膜上に微量の還元性有機化合物を含む材料を
塗布し、熱処理を施すことを特徴とする。
"Structure of the Invention" The method for forming a transparent electrode substrate of the present invention involves forming a transparent electrode film on a substrate, which is made by doping indium oxide with tin oxide, and coating the electrode film with a material containing a trace amount of a reducing organic compound. It is characterized by being subjected to heat treatment.

このように、本発明においては、透明電極膜」二に微量
の還元性有機化合物を含む材料を塗布して熱処理するよ
うにしたので、熱処理の際に、還元性有機化合物により
透明電極膜中の酸化インジウムが部分的に還元され、透
明電極膜中のキャリヤ濃度が増加し、それによって透明
電極膜の面積抵抗値を減少させることができる。
In this way, in the present invention, a material containing a trace amount of a reducing organic compound is applied to the transparent electrode film and heat-treated, so that during the heat treatment, the reducing organic compound reduces the amount of the material in the transparent electrode film. The indium oxide is partially reduced and the carrier concentration in the transparent electrode film increases, thereby reducing the sheet resistance value of the transparent electrode film.

次に、本発明の好ましい態様についてより具体的に説明
する。
Next, preferred embodiments of the present invention will be explained in more detail.

還元性有機化合物を含む材料としては、例えば液晶表示
素子の場合、還元性有機化合物を含む配向剤が用いられ
る。かかる配向剤の主剤としては、ポリイミド前駆体(
例えば東しく株)製、商品名「トレース」、日立化成(
株)製、商品名rprx J ) 、 ポリイミド(例
えば日立化成(株)製、商品名rHIMAL l100
J ) 、ポリビニルアルコール(例えばクラリ(株)
製、商品名「クラレボバール」)等が用いられる。また
、還元性有機化合物としては、キノン化合物、糖類、ア
ルデヒド化合物等が用いられる。配向剤などの材料中に
おける還元性有機化合物の配合量は、1〜3重賃%程度
が好ましい。還元性有機化合物の量が1重量%未満では
本発明の効果が乏しく、3重量%を超えると配向膜など
の成膜状態が悪化してしまう。
As the material containing a reducing organic compound, for example, in the case of a liquid crystal display element, an alignment agent containing a reducing organic compound is used. The main ingredient of such an alignment agent is a polyimide precursor (
For example, manufactured by Toshiku Co., Ltd. under the trade name ``Trace'', Hitachi Chemical (
manufactured by Hitachi Chemical Co., Ltd., trade name rprx J), polyimide (for example, manufactured by Hitachi Chemical Co., Ltd., trade name rHIMAL 1100)
J), polyvinyl alcohol (e.g. Kurari Co., Ltd.)
manufactured by Kuraray Bobal (trade name: ``Kurare Bobal''), etc. Further, as the reducing organic compound, a quinone compound, a saccharide, an aldehyde compound, etc. are used. The content of the reducing organic compound in the material such as the alignment agent is preferably about 1 to 3% by weight. If the amount of the reducing organic compound is less than 1% by weight, the effect of the present invention will be poor, and if it exceeds 3% by weight, the state of film formation such as an alignment film will deteriorate.

配向膜などの材料は、基板に形成した透明電極膜上に、
例えばスピンナー、ロールコート、グラビア印刷などの
方法で塗布する。本発明では、その後に熱処理を行なう
が、熱処理の条件は、例えば100〜200℃で10〜
80分間程度が好ましい。熱処理温度が100°C未満
では透明電極膜の低抵抗値化の効果があるが経時変化を
おこす傾向があり、熱処理温度が200’0を超えると
透明電極の抵抗値が上昇してしまうことがある。また、
熱処理時間が10分未満では抵抗値低下の効果が小さく
、60分を超えると抵抗値低下があまり生じない。なお
、透明電極膜上に形成する配向膜などの膜厚は、例えば
600〜900人程度が適当である。
Materials such as alignment films are placed on transparent electrode films formed on substrates.
For example, it is applied using a spinner, roll coating, gravure printing, or other methods. In the present invention, heat treatment is then performed, and the heat treatment conditions are, for example, 100 to 200°C for 10 to
About 80 minutes is preferable. When the heat treatment temperature is less than 100°C, it has the effect of lowering the resistance value of the transparent electrode film, but it tends to change over time, and when the heat treatment temperature exceeds 200°C, the resistance value of the transparent electrode film may increase. be. Also,
If the heat treatment time is less than 10 minutes, the effect of reducing the resistance value is small, and if it exceeds 60 minutes, the resistance value does not decrease much. The thickness of the alignment film formed on the transparent electrode film is preferably about 600 to 900, for example.

「発明の実施例」 実施例1 真空蒸着法によって酸化インジウムに酸化スズをドーピ
ングした透明電極■りをガラス基板上に厚さ400人で
形成する。この透明電極膜上に、ポリイミド前駆体(日
立化成(株)、商品名[旧MAL1100J ) 99
重量%、ハイドロキノン1重量%からなる配向剤をスピ
ンナー塗布し、150℃にて20分間焼成して厚さ60
0人の配向Ilすを形成した。この電極基板においては
、配向膜形成前の透明電極の抵抗値は+00Ω/口であ
ったが、配向膜形成後も前記初期抵抗値を維持していた
"Embodiments of the Invention" Example 1 A transparent electrode layer made of indium oxide doped with tin oxide is formed to a thickness of 400 mm on a glass substrate by a vacuum evaporation method. On this transparent electrode film, a polyimide precursor (Hitachi Chemical Co., Ltd., trade name [formerly MAL1100J) 99
% by weight and hydroquinone by 1% by weight using a spinner, and baked at 150°C for 20 minutes to obtain a thickness of 60% by weight.
0 people's orientation II was formed. In this electrode substrate, the resistance value of the transparent electrode before the formation of the alignment film was +00Ω/hole, but the initial resistance value was maintained even after the formation of the alignment film.

実施例2 有機インジウム化合物としてトリスアセチルアセトナー
トインジウム、有機スズ化合物としてジブチルスズアセ
ドープを用い、ニトロセルロースを添加したメチルエチ
ルケトンの有機溶剤に溶かして、透明電極膜形成液を作
成する。
Example 2 A transparent electrode film forming solution is prepared by using indium trisacetylacetonate as an organic indium compound and dibutyltin acedope as an organic tin compound and dissolving them in an organic solvent of methyl ethyl ketone to which nitrocellulose is added.

この透明電極膜形成液にガラス基板を浸漬し、速度20
cm/分で引き上げ、140℃で10分間の予備乾燥を
行ない、500°Cで30分間焼成した。その後、水素
と窒素の混合雰囲気中で500°C130分間のアニー
ルを実施した。こうして得られた透明、電極膜の面積抵
抗値は、500Ω/口であった。
A glass substrate was immersed in this transparent electrode film forming solution, and
cm/min, pre-dried at 140°C for 10 minutes, and fired at 500°C for 30 minutes. Thereafter, annealing was performed at 500° C. for 130 minutes in a mixed atmosphere of hydrogen and nitrogen. The transparent electrode film thus obtained had a sheet resistance value of 500Ω/hole.

次に、実施例1と同様の配向剤を上記透明電極膜上にス
ピンナー塗布し、150℃にて20分間焼成して配向膜
を形成した。配向膜形成後、透明電極の面積抵抗値を測
定したところ、100Ω/口よりも低い値が得られた。
Next, the same alignment agent as in Example 1 was applied onto the transparent electrode film using a spinner, and baked at 150° C. for 20 minutes to form an alignment film. After forming the alignment film, the sheet resistance value of the transparent electrode was measured, and a value lower than 100Ω/hole was obtained.

このように、本発明の効果は、有機インジウム化合物、
有機スズ化合物を含む透明電極膜形成液を前記基板に塗
布し焼成することにより透明電極11りを形成する場合
に特に著しいことあく分った。
In this way, the effects of the present invention can be achieved by using organic indium compounds,
It has been found that this is particularly remarkable when the transparent electrode 11 is formed by coating the substrate with a transparent electrode film-forming liquid containing an organic tin compound and baking it.

「発明の効果J 以上説明したように、本発明によれば、透明電極膜上に
、微量の還元性有機化合物を含む材料を塗布し、熱処理
を施すようにしたので、熱処理の際に還元性有機化合物
により透明電極膜中の酸化インジウムが部分的に還元さ
れ、透明電極膜中のキャリヤ濃度が増加し、それによっ
て透明電極膜の面積抵抗値を減少させることができる。
"Effect of the Invention J As explained above, according to the present invention, a material containing a trace amount of a reducing organic compound is coated on a transparent electrode film and heat treatment is performed. Indium oxide in the transparent electrode film is partially reduced by the organic compound, and the carrier concentration in the transparent electrode film increases, thereby reducing the sheet resistance value of the transparent electrode film.

Claims (3)

【特許請求の範囲】[Claims] (1)基板上に酸化インジウムに酸化スズをドーピング
した透明電極膜を形成し、この電極膜上に微量の還元性
有機化合物を含む材料を塗布し、熱処理を施すことを特
徴とする透明電極基板の形成方法。
(1) A transparent electrode substrate characterized by forming a transparent electrode film made of indium oxide doped with tin oxide on a substrate, coating the electrode film with a material containing a trace amount of a reducing organic compound, and subjecting it to heat treatment. How to form.
(2)特許請求の範囲第1項において、前記還元性有機
化合物を含む材料が配向剤である透明電極基板の形成方
法。
(2) The method for forming a transparent electrode substrate according to claim 1, wherein the material containing the reducing organic compound is an alignment agent.
(3)特許請求の範囲第1項または第2項において、有
機インジウム化合物、有機スズ化合物を含む透明電極膜
形成液を前記基板に塗布し焼成することにより前記透明
電極膜を形成する透明電極基板の形成方法。
(3) A transparent electrode substrate according to claim 1 or 2, wherein the transparent electrode film is formed by applying a transparent electrode film forming liquid containing an organic indium compound or an organic tin compound to the substrate and baking it. How to form.
JP23894785A 1985-10-25 1985-10-25 Formation of transparent electrode substrate Pending JPS6298506A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23894785A JPS6298506A (en) 1985-10-25 1985-10-25 Formation of transparent electrode substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23894785A JPS6298506A (en) 1985-10-25 1985-10-25 Formation of transparent electrode substrate

Publications (1)

Publication Number Publication Date
JPS6298506A true JPS6298506A (en) 1987-05-08

Family

ID=17037649

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23894785A Pending JPS6298506A (en) 1985-10-25 1985-10-25 Formation of transparent electrode substrate

Country Status (1)

Country Link
JP (1) JPS6298506A (en)

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