JPS6297342A - Bonding method - Google Patents
Bonding methodInfo
- Publication number
- JPS6297342A JPS6297342A JP23666285A JP23666285A JPS6297342A JP S6297342 A JPS6297342 A JP S6297342A JP 23666285 A JP23666285 A JP 23666285A JP 23666285 A JP23666285 A JP 23666285A JP S6297342 A JPS6297342 A JP S6297342A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- semiconductor element
- bonding
- lead
- bonding tool
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はフィルムキャリヤのリードと半導体素子を接続
する接続方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a connection method for connecting leads of a film carrier and a semiconductor element.
従来の技術
フィルム状のリードと半導体素子上のアルミニウム電極
とを金属突起を介して接続するいわゆるフィルムキャリ
ヤ方式は、薄型あるいは小型化に適した実装方法として
活用されている。従来の前記フィルムキャリヤ方式にお
いて、金属突起を介してフィルム状のリードと半導体素
子の電極とを接続する方法について第２図でのべる。Conventional Technology The so-called film carrier method, in which a film-like lead and an aluminum electrode on a semiconductor element are connected via metal protrusions, is used as a mounting method suitable for thinning or downsizing. In the conventional film carrier method, a method for connecting film-like leads and electrodes of a semiconductor element via metal protrusions is illustrated in FIG.
半導体素子１の電極２とフィルムキャリヤ３のＣｕ箔を
エツチング加工し、Ｓｎメッキ処理したリード４とは位
置合せされる。この時金属突起１３は前記半導体素子１
の電極２上に多層金属膜（バリヤメタル）を介して形成
しても良いし、転写バンプ方式によってリード側に形成
しても良いものである。また半導体素子１はボングーの
ステージＹ上に熱放散を防ぐ絶縁拐８上に載置されヒ−
夕６を有する加圧・加熱するだめのボンディングツール
６で、加圧・加熱１ｏする事により、金属突起と電極あ
るいは、金属突起とリードとを共晶合金もしくは熱圧着
により接続するものである。The electrodes 2 of the semiconductor element 1 and the leads 4 formed by etching the Cu foil of the film carrier 3 and subjecting them to Sn plating are aligned. At this time, the metal protrusion 13 is connected to the semiconductor element 1.
It may be formed on the electrode 2 via a multilayer metal film (barrier metal), or it may be formed on the lead side by a transfer bump method. Further, the semiconductor device 1 is placed on the stage Y of the bongoo on an insulating layer 8 that prevents heat dissipation.
A bonding tool 6 for pressurizing and heating is used to connect a metal protrusion and an electrode or a metal protrusion and a lead by eutectic alloy or thermocompression bonding by applying pressure and heating at 1°C.
例えば金属突起がＡｕで構成され、この金属突起が半導
体素子の電極上にバリヤメタルを介して形成されている
場合は、前記金属突起とリードとをムｕ 、 Ｓｎの共
晶合金で接続する事になり、その接続部の温度は３６０
〜５００℃も必要とする。また転写バンプ方式でリード
側に金属突起が形成されている場合は、前記金属突起と
半導体素子の電極とは熱圧着によりムＵ、ムｌの合金で
接続され、その接続部の温度も４００〜５５０℃も必要
とする０
ボンディングツール５の底面がフィルム状のリード４に
接した瞬間、前記ボンディングツール６の底面からの熱
の流れは、９の如く半導体素子１を加熱し、更に絶縁材
８を通りステージ７に達する。この瞬間にボンディング
ツール６の底面の温度は急激に降下する一方、半導体素
子の表面ムと裏面Ｂとの間に著じるしい温度差が発生す
る。例えば、ボンディングツール６の底面がリード４に
接した瞬間から約１秒後でも約１ｏｏ℃の温度差が発生
する。For example, if the metal protrusion is made of Au and is formed on the electrode of a semiconductor element via a barrier metal, the metal protrusion and the lead may be connected using a eutectic alloy of Mu and Sn. The temperature of the connection is 360
~500°C is also required. In addition, when a metal protrusion is formed on the lead side using the transfer bump method, the metal protrusion and the electrode of the semiconductor element are connected by thermocompression bonding with an alloy of MU and MU, and the temperature of the connection part is also 400~400℃. At the moment when the bottom surface of the bonding tool 5 comes into contact with the film-like lead 4, the flow of heat from the bottom surface of the bonding tool 6 heats the semiconductor element 1 as shown in 9, and further heats the insulating material 8. to reach stage 7. At this moment, the temperature of the bottom surface of the bonding tool 6 drops rapidly, and a significant temperature difference occurs between the front surface B and the back surface B of the semiconductor element. For example, a temperature difference of about 10° C. occurs even after about 1 second from the moment the bottom surface of the bonding tool 6 comes into contact with the lead 4.
発明が解決しようとする問題点
前述した如く半導体素子１の表面領域と裏面領域で温度
差が発生し、各領域での熱膨張の度合が異なるためにリ
ード４がボンディングツール５の底面に癒着する現象が
現われ、前記ボンディングツール６の底面がリード４か
ら離れる時に、リード４がボンディングツール６の底面
に癒着したままであるので、リード４を切断する事故が
あった。Problems to be Solved by the Invention As mentioned above, a temperature difference occurs between the front surface region and the back surface region of the semiconductor element 1, and the degree of thermal expansion in each region is different, so that the leads 4 adhere to the bottom surface of the bonding tool 5. When the bottom surface of the bonding tool 6 was separated from the lead 4, the lead 4 remained attached to the bottom surface of the bonding tool 6, causing an accident in which the lead 4 was cut.
これは、加圧状態で半導体素子の厚さ方向で熱膨張の差
が発生するためと推定され、ボンディングツール６の底
面とり−ド４および金属突起１３と電極２とは加圧され
、動く事はできないから、これらの支点に、半導体素子
の膨張による応力が加わるためと思われる。This is presumed to be due to a difference in thermal expansion occurring in the thickness direction of the semiconductor element under pressure, and the bottom mount 4 and metal protrusion 13 of the bonding tool 6 and the electrode 2 are pressurized and do not move. This is probably because stress due to the expansion of the semiconductor element is applied to these supporting points.
更に検討した結果、接合時に半導体素子１の表面Ａよシ
も裏面Ｂの温度の方が著しるしく高くなり、半導体素子
１の裏面領域の方が膨張量が表面領域よりも大きい事を
観察できた。これは、絶縁材等により熱がこもるためと
思われる。これによりリード４がボンディングツール６
の底面に癒着するものと推定できる。As a result of further investigation, it was observed that the temperature of the back surface B of the semiconductor element 1 was significantly higher than that of the front surface A of the semiconductor element 1 during bonding, and that the amount of expansion in the back surface area of the semiconductor element 1 was larger than that of the front surface area. Ta. This seems to be because heat is trapped by the insulating material. This causes the lead 4 to connect to the bonding tool 6.
It is presumed that it adheres to the bottom surface of the
問題点を解決するための手段
そこで本発明は接合時に半導体素子の表面と裏面の温度
差をほぼ等しくするか、もしくは、半導体素子の表面領
域よりも裏面惟域の温度を若干低くぜんとするものであ
る。Means for Solving the Problems Accordingly, the present invention makes the temperature difference between the front surface and the back surface of the semiconductor element almost equal during bonding, or makes the temperature of the back surface area slightly lower than that of the front surface area of the semiconductor element. It is.
作用
少なくとも半導体素子の厚さ方向の膨張を均等にできる
ため、ボンディングツールの底面とリードとの癒着を防
止でき、従来発生していたリードの切断や、接合部の接
合不良の発生を著しるしく減少できる。Function: At least the expansion of the semiconductor element in the thickness direction can be made uniform, so it is possible to prevent adhesion between the bottom of the bonding tool and the leads, which significantly reduces the occurrence of lead breakage and bonding defects at the bonding parts that conventionally occur. Can be reduced.
実施例
第１図で本発明の詳細な説明する。電極２を有する半導
体素子１は加熱ヒータ１１上に設置され、例えば転写バ
ンプ方式で形成したフィルムキャリヤ３のリード４上の
金属突起１３と前記半導体素子１の電極２とが位置合せ
され、ヒーター６を有するボンディングツール６で、前
記リード４上から、加圧・加熱される。ここで本発明は
、この加圧・加熱時において、前記半導体素子１の表面
ムの温度と裏面の温度Ｂをほぼ等しいかもしくは若干表
面ムの温度を高目にして、接合するものである。EXAMPLE The present invention will be explained in detail with reference to FIG. The semiconductor element 1 having the electrode 2 is placed on the heater 11, and the electrode 2 of the semiconductor element 1 is aligned with the metal protrusion 13 on the lead 4 of the film carrier 3 formed by the transfer bump method, for example, and the heater 6 is placed on the heater 11. Pressure and heat are applied from above the leads 4 using a bonding tool 6 having a bonding tool 6 . Here, in the present invention, during this pressurization and heating, the temperature of the front surface and the temperature B of the back surface of the semiconductor element 1 are approximately equal to each other, or the temperature of the front surface is made slightly higher for bonding.
この様な温度構成によりリード４とボンティングツール
６の底面との癒着を防止できる。例えば、従来の如くの
ムくＢの温度での構成であれば、前記ボンディングツー
ルの温度が４００℃で、すでに癒着を発生させ、接合部
の強度を低下さすものである。しかし、本発明の構成で
あるム＝ＢもしくはＡ）Ｂであればボンディングツール
の温度５５０’（：でも癒着は発生しないものである。Such a temperature configuration can prevent the lead 4 from adhering to the bottom surface of the bonding tool 6. For example, in the case of a conventional configuration with a temperature of Muku B, the temperature of the bonding tool is 400° C., which already causes adhesion and reduces the strength of the bonded portion. However, if M=B or A)B, which is the configuration of the present invention, adhesion does not occur even if the temperature of the bonding tool is 550' (:).
また、本発明を更に改良すれば、ステージ１４に設置し
た加熱ヒータ１１に前記ボンディングツール６がリード
に接する前、あるいは接した直後に、パルス電流を流し
、加熱ヒータ１１の温度を熱電対１２で制御し、半導体
素子の表面と裏面の温度を、はぼ等しく確実に設定でき
るものである。Further, if the present invention is further improved, a pulse current is applied to the heater 11 installed on the stage 14 before or immediately after the bonding tool 6 contacts the lead, and the temperature of the heater 11 is controlled by the thermocouple 12. It is possible to reliably set the temperature on the front and back surfaces of the semiconductor element to be almost equal.
加熱ヒータ１１は常時加熱しても良いし、ボンディング
ツール５が作動する時のみ、瞬間的に温度を上昇させる
方式であっても良い。The heater 11 may be heated all the time, or may be of a type that instantaneously raises the temperature only when the bonding tool 5 is activated.
発明の効果
（１）ボンディングツールとリードとの癒着が発生しに
くいから接合部の信頼性を著しるしく向上できる。Advantages of the Invention (1) Since adhesion between the bonding tool and the lead is less likely to occur, the reliability of the joint can be significantly improved.
（２）半導体素子の裏面温度を制御できるからボンディ
ング時の温度を自由に選択でき、かつ温度条件の範囲を
広く設定できるため、工程が安定となり、信頼性を向上
できる。(2) Since the temperature on the back surface of the semiconductor element can be controlled, the temperature during bonding can be freely selected and the range of temperature conditions can be set widely, making the process stable and improving reliability.
第１図は本発明の一実施例のボンディング時の４・Ｉ
断面図、第２図は従射６ボンデイング時の断面図である
。
１・・・・・・半導体素子、２・・・・・・電極、３・
・・・・・フィルムキャリヤ、４・・・・・・リード、
６・・・・・・ボンディングツール、１１・・・・・・
加熱ヒーター、１３・・・・・・金属突起。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
第２図FIG. 1 is a 4·I cross-sectional view during bonding according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view during passive 6-bonding. 1... Semiconductor element, 2... Electrode, 3...
...Film carrier, 4...Lead,
6...Bonding tool, 11...
Heating heater, 13...metal protrusion. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2
Claims (3)
極とを金属突起を介して接合する際、加圧・加熱するた
めのボンディングツールが前記フィルムリードに接して
いる時の、前記半導体表面と裏面の温度がほぼ同一かも
しくは前記半導体素子の表面の温度よりも裏面の温度が
低い事を特徴とするボンディング方法。(1) When bonding a film lead and an electrode formed on the surface of a semiconductor element via a metal protrusion, the semiconductor front and back surfaces when a bonding tool for applying pressure and heat is in contact with the film lead. A bonding method characterized in that the temperatures of the semiconductor element are substantially the same or the temperature of the back surface of the semiconductor element is lower than the temperature of the front surface of the semiconductor element.
る時の半導体素子の表面の温度とほぼ等しくなる様に、
前記半導体素子の裏面を加熱する事を特徴とする特許請
求の範囲第１項記載のボンディング方法。(2) The temperature should be approximately equal to that of the surface of the semiconductor element when the bonding tool is in contact with the film lead.
The bonding method according to claim 1, characterized in that the back surface of the semiconductor element is heated.
その加熱がボンディングツールの作動と少なくとも連動
している事を特徴とする特許請求の範囲第２項記載のボ
ンディング方法。(3) The bonding method according to claim 2, wherein the heating from the back surface of the semiconductor element is performed by a pulse heating method, and the heating is at least linked to the operation of a bonding tool.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23666285A JPS6297342A (en) | 1985-10-23 | 1985-10-23 | Bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23666285A JPS6297342A (en) | 1985-10-23 | 1985-10-23 | Bonding method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6297342A true JPS6297342A (en) | 1987-05-06 |
Family
ID=17003928
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23666285A Pending JPS6297342A (en) | 1985-10-23 | 1985-10-23 | Bonding method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6297342A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5878942A (en) * | 1995-09-22 | 1999-03-09 | International Business Machines Corporation | Soldering method and soldering apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61168930A (en) * | 1985-01-23 | 1986-07-30 | Hitachi Ltd | Tape carrier bonder |
-
1985
- 1985-10-23 JP JP23666285A patent/JPS6297342A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61168930A (en) * | 1985-01-23 | 1986-07-30 | Hitachi Ltd | Tape carrier bonder |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5878942A (en) * | 1995-09-22 | 1999-03-09 | International Business Machines Corporation | Soldering method and soldering apparatus |
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