JPS6297204A - Thin film material - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION TECHNICAL FIELD The present invention relates to a thin film material having wear resistance and oxidation resistance suitable as, for example, a protective layer of a thermal head.

"Prior Art and its Problems" Traditionally, thermal heads have been made of a glass substrate on which a partial glaze layer is formed, an undercoat layer made of TaOx, etc., a heating resistor layer made of Ta2N, etc.
1. A power supply conductor layer made of Ni or the like and a protective layer were sequentially laminated. Here, the protective layer has the role of preventing the power supply conductor layer and the heating resistor layer from deteriorating due to oxidation and providing durability against friction with the recording paper. a prevention layer;
It was common to have a two-layer structure including a wear-resistant layer made of Ta205 or the like.

-4. Thermal heads are required to be able to record on paper with rough surfaces, to be capable of high-speed recording, and to be able to be powered by batteries. It is required to increase the thermal efficiency of the head.

However, in the conventional thermal head described above,
Since the protective layer is composed of two layers, an anti-oxidation layer and an abrasion-resistant layer, it has poor thermal conductivity, which has been a bottleneck in improving thermal efficiency. Furthermore, since the number of steps is large, there is also the drawback of high cost.

``Object of the Invention'' An object of the present invention is to provide a thin film material suitable for fields requiring oxidation resistance and abrasion resistance, such as a protective layer for a thermal head.

"Structure of the Invention" The thin film material of the present invention is characterized by containing three components, Si, Mo, and H, and having wear resistance and oxidation resistance.

When this thin film material is used, for example, as a protective layer of a thermal head, it is possible to achieve the same surface temperature with a lower applied voltage than a conventional protective layer with the same film thickness ↑. Furthermore, since it has excellent oxidation resistance and wear resistance, the protective layer can be composed of a single layer, and the number of manufacturing steps can be reduced to reduce costs.

Therefore, by setting the specific resistance to 100Ω-C11 or less, the thin film material of the present invention becomes an excellent insulating thin film material.When using the thin film material of the present invention as an insulating thin film,
The composition ratio is preferably such that the atomic ratio of Si and KO is 3 to 2:l, with the balance being N. More specifically, Si: 30 to 40 at%, Mo: 10 to 20 at%.
%, N: 45 to 55 at%.

Further, by changing the composition of the three Si-Mo-N components, the thin film material of the present invention can also be used as a material for a resistor. When used as a resistor, the composition ratio of the thin film material is Si: 25 to 30 at%, Mo 40 to 50 at%.
, N: 25 to 30 at%.

The thin film material of the present invention is, for example, a Si3N4 target (/)
Ar
The film can be formed by sputtering in a mixed gas atmosphere of and N2.

Embodiments of the Invention FIG. 1 shows an example of a thermal head using the thin film material of the present invention as a protective layer.

In other words, an alumina substrate! An undercoat layer 2 made of Tact, a heating resistor layer 3 made of Ta2N, and a power supply conductor layer 4 made of AI are sequentially laminated thereon by sputtering. The power supply conductor layer 4 is then patterned by etching, thereby forming the heating dot portions A. After that, Ar is 5 x 10=Torr,
N onto a 5-inch-diameter 5i3Na target in a mixed gas atmosphere (N2 is IX1O-3Torn).

Perform sputtering using a composite target with 5 chips placed on it! A protective layer 5 having a thickness of 2 gm is formed from three components: 31-Mo-H. The composition ratio of this protective layer 5 is Si: 34 at%, N: 51 at%, No:
It was 15 at%. Electric power was applied to the thermal head obtained in this manner, and the relationship between the applied electric power and the peak temperature of the heat generating portion was measured, and the results are shown in line a in FIG. 2.

On the other hand, for comparison, in Figure 1, 2
A thermal head with a SiQ□ film of gm thickness and a thermal head with a 5i3Na film of 2 gm thickness as a protective layer were fabricated, and the relationship between the applied power and the peak temperature of the heat generating part was determined in the same manner as above. It was measured. The results are shown in Fig. 2 by the line (S i02 film) and the line C (S!3 film).
(Na film).

As is clear from Fig. 2, 1. The thermal head using the thin film material of the present invention as a protective layer requires approximately 0.2 to 0.3 w/dat less applied power to obtain the same surface temperature. , I understand.

Next, in FIG. 1, as the protective layer 5, 5 gm thick
A thermal head with an i-No-N film formed thereon was manufactured.

Also, for comparison, 5i02 with a thickness of 24rn was used as a protective layer.
A thermal head was fabricated by laminating the film and a TaOx film with a thickness of 5 JLI. SS using these thermal heads
As a result of conducting the T test and the Indo-I test, both showed equivalent performance.

Note that in the thermal head shown in FIG. 1, the glass glaze layer is omitted for convenience, but it goes without saying that the glass glaze layer may be partially provided on the alumina substrate 1 corresponding to the heat generating portion A.

"Effects of the Invention" As explained above, the VjI111! of the present invention! The material has good oxidation resistance and abrasion resistance, so it can be used as an insulating thin film material, for example as a protective layer of a thermal head.
Suitable for IT. In particular, when used as a protective layer for a thermal head, the protective layer can be composed of a single layer, which simplifies the manufacturing process and improves thermal efficiency.

Further, the thin film material of the present invention can be used as a resistor material by taking advantage of its excellent oxidation resistance.

[Brief explanation of drawings]

Figure 1 is a cross-sectional view showing an example of a thermal head using the thin film material of the present invention as a protective layer, and Figure 2 is a chart showing the relationship between the power applied to the heat generating part of the thermal head and the peak temperature of the heat generating part. be. In the figure, 1 is an alumina substrate, 2 is an undercoat layer, 3 is a heating resistor layer, 4 is a power supply conductor layer, and 5 is a protective layer.

Claims (3)

[Claims] (1) A thin film material containing three components, Si, Mo, and N, and having wear resistance and oxidation resistance. (2) In claim 1, the specific resistance is 100
A thin film material of Ω-cm or less. (3) In claim 1 or 2, S
A thin film material in which the atomic ratio of i and Mo is 3 to 2:1, with the balance being N.