JPS6316272B2 - - Google Patents
Info
- Publication number
- JPS6316272B2 JPS6316272B2 JP55090564A JP9056480A JPS6316272B2 JP S6316272 B2 JPS6316272 B2 JP S6316272B2 JP 55090564 A JP55090564 A JP 55090564A JP 9056480 A JP9056480 A JP 9056480A JP S6316272 B2 JPS6316272 B2 JP S6316272B2
- Authority
- JP
- Japan
- Prior art keywords
- heating resistor
- wiring conductor
- film
- recording head
- thermal recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010438 heat treatment Methods 0.000 claims description 34
- 239000004020 conductor Substances 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 239000012298 atmosphere Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 239000011195 cermet Substances 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 21
- 239000003795 chemical substances by application Substances 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- XZXYQEHISUMZAT-UHFFFAOYSA-N 2-[(2-hydroxy-5-methylphenyl)methyl]-4-methylphenol Chemical compound CC1=CC=C(O)C(CC=2C(=CC=C(C)C=2)O)=C1 XZXYQEHISUMZAT-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229940107816 ammonium iodide Drugs 0.000 description 1
- -1 ammonium nitride Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
Description
【発明の詳細な説明】
本発明は、フアクシミリ装置等の情報記録部に
設置される薄膜形熱記録ヘツドの製造方法に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a thin film thermal recording head installed in an information recording section of a facsimile machine or the like.
フアクシミリ装置の情報記録方式にはいくつか
の方式があるが、感熱記録ヘツドによる方式は構
成部品を小型化でき、かつ高速に対応できること
から、フアクシミリ装置の記録装置として有効な
ものである。従来のこの種の熱記録ヘツドは、第
１図に示すように横一列に並んだ複数個の発熱抵
抗体１と、これに給電するための配線導体２を主
として構成してある。そして、これをフアクシミ
リ装置の記録部に設置し、通電による発熱抵抗体
１からのジユール熱が、その発熱抵抗体の上面部
が通過する図示していない感熱紙に伝わり、発色
させるようになつている。この熱記録ヘツドの断
面構造は、第２図に示す如くである。第２図は第
１図のＡ−Ｂ線断面図であるが、発熱抵抗体１、
配線導体２並びにそれらを絶縁、保護する膜は、
スパツタ並びに酸化等によつて形成される。 There are several methods for recording information in facsimile devices, but the method using a thermal recording head is effective as a recording device for facsimile devices because its components can be made smaller and it can handle high speeds. As shown in FIG. 1, a conventional thermal recording head of this type mainly consists of a plurality of heat generating resistors 1 arranged in a horizontal line and a wiring conductor 2 for supplying power to the heat generating resistors 1. Then, this was installed in the recording section of a facsimile machine, and the heat from the heating resistor 1 due to electricity was transmitted to the thermal paper (not shown) through which the upper surface of the heating resistor passed, causing it to develop color. There is. The cross-sectional structure of this thermal recording head is as shown in FIG. FIG. 2 is a sectional view taken along the line A-B in FIG. 1, and shows the heating resistor 1,
The wiring conductor 2 and the film that insulates and protects them are:
It is formed by sputtering, oxidation, etc.
第２図に従つてその製造工程を説明すると、ま
ずアルミナ基板３上には、その表面部を平担化す
るためにグレーズ層４が施こされる。このグレー
ズ層４は抵抗体１の発熱を蓄熱する作用を併せ有
し、記録紙側への熱伝達を能率よくする。このグ
レース層４の上面にはアンダーコート膜５が施こ
される。これは、タンタル（Ta）の熱酸化膜
（Ta2O5）で、発熱抵抗体１のパターン形成時に
グレース層４の耐エツチング性を補う目的で設け
られる。その厚さは、約1500Åで、Taのスパツ
タ膜をO2雰囲気中で５時間の熱酸化条件により
得られる。発熱抵抗体１はこのアンダーコート５
上面に施こされる。これは、窒化タンタル
（Ta2N）膜で成り、TaをN2、Ar混合雰囲気で
スパッタして得られる。そしてその厚さは約1000
Åである。発熱抵抗体１のパターン形成にはエツ
チング剤として弗酸と硝酸の混合液を用いる。こ
のとき、アンダーコート膜５はほとんど侵されな
い。発熱抵抗体１の上面に施こされ、外部配線と
接続される配線導体２は、Cr（厚さ1500Å）、Au
（1μｍ）の２層構造で、各々が選択的にエツチン
グされる。このCrのエツチング剤は硝酸化第二
セリウムアンモンの水溶液、Auのエツチング剤
はヨードとヨー化アンモンの水溶液である。そし
て発熱抵抗体１、配線導体２の上面に施こされる
保護膜６は、発熱抵抗体１を熱処理したとき酸化
に対し不安定で、また、記録ヘツドとして使用し
た場合、発熱時に酸化して抵抗変化することを抑
えるために形成される。その材料はシリカ
（SiO2）が通しており、約2μｍの厚さで形成され
る。さらに、最上面に形成される耐摩耗層７は、
感熱紙が摺動するときに熱ヘツド部の摩耗を防ぐ
ために形成されているもので、五酸化タンタル
（Ta2O5）のスパツタ膜が5μｍの厚さで形成され
る。 The manufacturing process will be explained with reference to FIG. 2. First, a glaze layer 4 is applied on the alumina substrate 3 in order to flatten the surface thereof. This glaze layer 4 also has the function of storing heat generated by the resistor 1, and improves the efficiency of heat transfer to the recording paper side. An undercoat film 5 is applied to the upper surface of this grace layer 4. This is a tantalum (Ta) thermal oxide film (Ta 2 O 5 ), and is provided for the purpose of supplementing the etching resistance of the grace layer 4 when forming the pattern of the heating resistor 1. Its thickness is about 1500 Å, and it is obtained by thermally oxidizing a sputtered Ta film in an O 2 atmosphere for 5 hours. The heating resistor 1 is made of this undercoat 5
It is applied to the top surface. This is made of tantalum nitride (Ta 2 N) film, which is obtained by sputtering Ta in a mixed atmosphere of N 2 and Ar. And its thickness is about 1000
It is Å. For pattern formation of the heating resistor 1, a mixed solution of hydrofluoric acid and nitric acid is used as an etching agent. At this time, the undercoat film 5 is hardly attacked. The wiring conductor 2, which is placed on the top surface of the heating resistor 1 and connected to external wiring, is made of Cr (thickness 1500 Å), Au
(1 μm) two-layer structure, each of which is selectively etched. The etching agent for Cr is an aqueous solution of ceric ammonium nitride, and the etching agent for Au is an aqueous solution of iodine and ammonium iodide. The protective film 6 applied to the top surface of the heating resistor 1 and the wiring conductor 2 is unstable to oxidation when the heating resistor 1 is heat-treated, and when used as a recording head, it oxidizes when heat is generated. It is formed to suppress resistance changes. The material is made of silica (SiO 2 ) and is approximately 2 μm thick. Furthermore, the wear-resistant layer 7 formed on the top surface is
It is formed to prevent wear of the thermal head when the thermal paper slides, and is made of a sputtered film of tantalum pentoxide (Ta 2 O 5 ) with a thickness of 5 μm.
このようにして形成される従来の熱記録ヘツド
の欠点は、材料の選択に伴なう構造の複雑さと、
多数の製造プロセスを必要とすることによりコス
トが高くなること、並びに、多層化されるため発
熱抵抗体と耐摩耗層間の厚みは増し、感熱記録紙
への熱伝達が悪いことである。 The disadvantages of conventional thermal recording heads formed in this way are the complexity of construction associated with the choice of materials;
The cost is high due to the necessity of multiple manufacturing processes, and the thickness between the heating resistor and the abrasion resistant layer increases due to the multilayer structure, resulting in poor heat transfer to the thermosensitive recording paper.
本発明は、前述従来技術の欠点をなくし、その
目的は、製造プロセスの簡略化に伴なう製造コス
トの低減を図ると共に、高品質の熱記録ヘツドを
提供することである。 The present invention eliminates the drawbacks of the prior art described above, and its purpose is to provide a high quality thermal recording head while reducing manufacturing costs due to the simplification of the manufacturing process.
本発明は、グレーズされたアルミナ基板上に
Cr（70〜90％）−SiOで成る発熱抵抗体を形成し、
それにAlまたはAlの合金で成る配線導体を形成
し、該発熱抵抗体と配線導体の上面にTa2O5また
はSiCで成る耐摩耗層を形成することによつて上
記目的を達成したものである。 The present invention is applied to a glazed alumina substrate.
A heating resistor made of Cr (70-90%)-SiO is formed,
The above objective is achieved by forming a wiring conductor made of Al or an alloy of Al, and forming a wear-resistant layer made of Ta 2 O 5 or SiC on the upper surfaces of the heating resistor and the wiring conductor. .
以下、第３図に従つて本発明を詳述する。第３
図において、第２図と同一符号を付してあるもの
は同一材料を示すものであるが、第２図と異なる
点は、グレース層４の上面に直接的にCr（70〜90
％）−SiOのサーメツトで成る発熱抵抗体１１を
形成し、それにAlまたはAlの合金で成る配線導
体１２を形成した後、その発熱抵抗体１１と配線
導体１２に直接的に耐摩耗層１３を形成できるよ
うにしたことである。これは、上記の各材料を特
定することによつて達成している。 The present invention will be described in detail below with reference to FIG. Third
In the figure, the same reference numerals as in Figure 2 indicate the same materials, but the difference from Figure 2 is that Cr (70 to 90
%) - After forming the heating resistor 11 made of SiO cermet and forming the wiring conductor 12 made of Al or Al alloy thereon, the wear-resistant layer 13 is directly applied to the heating resistor 11 and the wiring conductor 12. This is to make it possible to form. This is accomplished by specifying each of the materials listed above.
以下に具体的な材料並びにその厚みなどを述べ
説明する。 The specific materials and their thickness will be described below.
まず、アルミナ基板３の厚さは1.5mmで、基板
の平担化と蓄熱効果を持たせるため、グレーズ層
４が10〜60μｍの厚さで施される。発熱抵抗体１
１はCr（70〜90％）−SiOを同時蒸着し、エツチン
グ剤として硝酸第二セリウムアンモン水溶液を使
用し、マスクをかけてパターン化する。このとき
の発熱抵抗体１１の膜厚は、1000Å〜5000Åで、
比抵抗値は1000〜10000μΩ・cmである。Crのモ
ル比、膜厚を適当に選択することにより１mm当り
８本の抵抗体配列に対して100〜1000Ωの広い抵
抗値設計が可能である。そして、その上面に形成
される配線導体１２は、Alを2μｍの厚さで蒸着
し、エツチング剤としてリン酸系の水溶液を用
い、マスクをかけてエツチングする。これは発熱
抵抗体１１に対して選択的にエツチング可能であ
る。また、発熱抵抗体１１と配線導体１２とは同
一工程で蒸着し、パターニングすることによつて
も得られる。また、配線導体としてAlを用いる
ため、発熱抵抗体との接着性が良く、Auの場合
に必要なCrまたはNiCr膜が不要である。 First, the alumina substrate 3 has a thickness of 1.5 mm, and a glaze layer 4 is applied to a thickness of 10 to 60 μm in order to flatten the substrate and provide a heat storage effect. Heat generating resistor 1
In No. 1, Cr (70-90%)-SiO is simultaneously deposited and patterned using a mask using a ceric ammonium nitrate aqueous solution as an etching agent. The film thickness of the heating resistor 11 at this time is 1000 Å to 5000 Å,
The specific resistance value is 1000 to 10000 μΩ·cm. By appropriately selecting the molar ratio of Cr and the film thickness, it is possible to design a wide resistance value of 100 to 1000 Ω for an array of 8 resistors per 1 mm. The wiring conductor 12 to be formed on the upper surface is formed by depositing Al to a thickness of 2 μm, and etching using a mask using a phosphoric acid-based aqueous solution as an etching agent. This can be selectively etched with respect to the heating resistor 11. Further, the heating resistor 11 and the wiring conductor 12 can also be obtained by depositing and patterning in the same process. Furthermore, since Al is used as the wiring conductor, it has good adhesion to the heating resistor, and there is no need for a Cr or NiCr film, which is required in the case of Au.
しかる後、発熱抵抗体１を大気中で、例えば
400℃〜500℃で３時間の安定化と抵抗値調整のた
めの熱処理を行なう。このとき、発熱抵抗体１１
は酸化に対して安定である。また、Alの配線導
体２が数＋Åの酸化膜を形成するが、スルフアミ
ン酸溶液に浸漬して除去できる。さらに、発熱抵
抗体１上に耐摩耗層７（Ta2O5又はSiC）をマス
クスパツタにより5μｍ厚さに形成る。これによ
つて、第３図に示すような薄膜形の熱記録ヘツド
が形成できる。 After that, the heating resistor 1 is placed in the atmosphere, for example.
Heat treatment is performed at 400°C to 500°C for 3 hours for stabilization and resistance value adjustment. At this time, the heating resistor 11
is stable against oxidation. Further, although the Al wiring conductor 2 forms an oxide film of several angstroms, it can be removed by immersing it in a sulfamic acid solution. Furthermore, a wear-resistant layer 7 (Ta 2 O 5 or SiC) is formed on the heating resistor 1 to a thickness of 5 μm by mask sputtering. As a result, a thin film type thermal recording head as shown in FIG. 3 can be formed.
したがつて、上述の熱記録ヘツドによれば、発
熱抵抗体１をパターン化するためのエツチング剤
として、硝酸化第二セリウムアンモン水溶液を用
いることができ、グレース層４への影響なく従来
必要としていたアンダーコート膜５を除去するこ
とができる。また、400℃〜500℃にて熱処理され
た発熱抵抗体（Cr−SiO）１は酸化に対して安定
であるため、従来、その上面に必要としていた保
護膜６を除去することができる。また、発熱抵抗
体と配線導体間の接着用金属膜も除去でき、さら
に、保護膜６の除去により、感熱紙側への熱伝達
が良好となり、感熱記録紙に再生記録した場合の
品質向上が図れる。 Therefore, according to the above-described thermal recording head, an aqueous solution of ceric ammonium nitrate can be used as an etching agent for patterning the heating resistor 1, without affecting the gray layer 4, which is necessary in the past. Undercoat film 5 can be removed. Furthermore, since the heating resistor (Cr--SiO) 1 heat-treated at 400 DEG C. to 500 DEG C. is stable against oxidation, the protective film 6 conventionally required on its upper surface can be removed. In addition, the metal film for adhesion between the heating resistor and the wiring conductor can be removed, and furthermore, by removing the protective film 6, heat transfer to the thermal paper side is improved, improving the quality when reproducing and recording on the thermal recording paper. I can figure it out.
上述の実施例からも明らかなように本発明によ
れば、従来発熱抵抗体の上下に必要としていたア
ンダーコート膜、保護膜並びに発熱抵抗体と配線
導体間の接着用金属膜を除去できることから、製
造プロセスの簡略化が達成できる。しかも、発熱
抵抗体と配線導体はいずれも蒸着成形であり、基
本的には同一工程の膜形成とパターニングが可能
で、製造コスト低減に寄与できる。さらに、保護
膜の除去により感熱記録紙側への熱伝達率が向上
する等と、薄膜形熱記録ヘツドとして最適なもの
といえる。 As is clear from the above embodiments, according to the present invention, the undercoat film, the protective film, and the adhesive metal film between the heating resistor and the wiring conductor, which were conventionally required above and below the heating resistor, can be removed. Simplification of the manufacturing process can be achieved. In addition, both the heating resistor and the wiring conductor are formed by vapor deposition, so that film formation and patterning can basically be performed in the same process, contributing to a reduction in manufacturing costs. Furthermore, the removal of the protective film improves the heat transfer rate to the thermal recording paper side, making it ideal as a thin film thermal recording head.
第１図は熱記録ヘツドの概略的平面図、第２図
は従来の熱記録ヘツド構造を示すものであつて、
第１図のＡ−Ｂ線断面を示している。第３図は本
発明の一実施例を示す第２図に対応する断面図で
ある。
３……アルミナ基板、４……グレース層、１１
……発熱抵抗体、１２……配線導体、１３……耐
摩耗層。
FIG. 1 is a schematic plan view of a thermal recording head, and FIG. 2 shows a conventional thermal recording head structure.
A cross section taken along line A-B in FIG. 1 is shown. FIG. 3 is a sectional view corresponding to FIG. 2 showing one embodiment of the present invention. 3...Alumina substrate, 4...Grace layer, 11
...Heating resistor, 12... Wiring conductor, 13... Wear-resistant layer.
Claims (1)
を蒸着し、該発熱抵抗体の発熱パターンを配線導
体の蒸着エツチング等により形成し、該発熱抵抗
体と配線導体の上面部に耐摩層を形成して成る薄
膜形の熱記録ヘツドの製造方法であつて、前記発
熱抵抗体として酸化雰囲気中で400℃〜500℃にて
熱処理を行なつたCr（70〜90％）−SiOのサーメツ
トを用い、前記配線導体としてAlまたはAlの合
金を用いたことを特徴とする薄膜形熱記録ヘツド
の製造方法。1. A heating resistor is deposited on a glazed alumina substrate, a heating pattern of the heating resistor is formed by vapor deposition etching of a wiring conductor, and a wear-resistant layer is formed on the upper surface of the heating resistor and wiring conductor. A method for manufacturing a thin film type thermal recording head consisting of a Cr(70-90%)-SiO cermet heat-treated at 400°C to 500°C in an oxidizing atmosphere as the heating resistor; A method for manufacturing a thin film thermal recording head, characterized in that Al or an alloy of Al is used as a wiring conductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9056480A JPS5715984A (en) | 1980-07-04 | 1980-07-04 | Manufacture of thin film type thermal recording head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9056480A JPS5715984A (en) | 1980-07-04 | 1980-07-04 | Manufacture of thin film type thermal recording head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5715984A JPS5715984A (en) | 1982-01-27 |
| JPS6316272B2 true JPS6316272B2 (en) | 1988-04-08 |
Family
ID=14001916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9056480A Granted JPS5715984A (en) | 1980-07-04 | 1980-07-04 | Manufacture of thin film type thermal recording head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5715984A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0765907B1 (en) * | 1995-09-29 | 1999-04-28 | Japan Polyolefins Co., Ltd. | Resin composition utilizing coated resin moldings and multilayer resin molding |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5127877A (en) * | 1974-08-26 | 1976-03-09 | Hodogaya Chemical Co Ltd | DENKYOKUKO ZOTAI |
| JPS52152725A (en) * | 1976-06-14 | 1977-12-19 | Matsushita Electric Ind Co Ltd | Printing exothermic element |
-
1980
- 1980-07-04 JP JP9056480A patent/JPS5715984A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5127877A (en) * | 1974-08-26 | 1976-03-09 | Hodogaya Chemical Co Ltd | DENKYOKUKO ZOTAI |
| JPS52152725A (en) * | 1976-06-14 | 1977-12-19 | Matsushita Electric Ind Co Ltd | Printing exothermic element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5715984A (en) | 1982-01-27 |
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