JPS6295325U - - Google Patents

Info

Publication number
JPS6295325U
JPS6295325U JP18621685U JP18621685U JPS6295325U JP S6295325 U JPS6295325 U JP S6295325U JP 18621685 U JP18621685 U JP 18621685U JP 18621685 U JP18621685 U JP 18621685U JP S6295325 U JPS6295325 U JP S6295325U
Authority
JP
Japan
Prior art keywords
input matching
microwave
local signal
signal input
inductance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18621685U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP18621685U priority Critical patent/JPS6295325U/ja
Publication of JPS6295325U publication Critical patent/JPS6295325U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Microwave Amplifiers (AREA)
  • Networks Using Active Elements (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの考案の一実施例を示すパターン図
、第2図はpn接合容量の電圧依存性を示す図、
第3図は従来のモノリシツタ・マイクロ波・デユ
アルゲートFETミキサを示すパターン図である
。 図において、1はデユアルゲートFET、3は
第1ゲート電極、4は第2ゲート電極、5はドレ
イン電極、6aはマイクロ波入力整合インダクタ
ンス、6bはローカル信号入力整合インダクタン
ス、7aはマイクロ波入力整合pn接合容量、7
bはローカル信号入力整合pn接合容量、8aは
マイクロ波入力容量制御電極、8bはローカル信
号入力容量制御電極、9aはマイクロ波入力回路
、9bはローカル信号入力回路、10は半導体基
板、13は中間周波数信号出力回路である。なお
、各図中同一符号は同一または相当部分を示す。
Fig. 1 is a pattern diagram showing an example of this invention, Fig. 2 is a diagram showing the voltage dependence of pn junction capacitance,
FIG. 3 is a pattern diagram showing a conventional monolithic microwave dual gate FET mixer. In the figure, 1 is a dual gate FET, 3 is a first gate electrode, 4 is a second gate electrode, 5 is a drain electrode, 6a is a microwave input matching inductance, 6b is a local signal input matching inductance, and 7a is a microwave input matching pn junction capacitance, 7
b is a local signal input matching pn junction capacitor, 8a is a microwave input capacitance control electrode, 8b is a local signal input capacitance control electrode, 9a is a microwave input circuit, 9b is a local signal input circuit, 10 is a semiconductor substrate, 13 is an intermediate This is a frequency signal output circuit. Note that the same reference numerals in each figure indicate the same or corresponding parts.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] デユアルゲートFETと、このFETの第1ゲ
ートおよび第2ゲート電極の各々に接続されたマ
イクロ波入力整合インダクタンスおよびローカル
信号入力整合インダクタンスと、この各々の入力
整合インダクタンスに接続されたマイクロ波入力
整合pn接合容量およびローカル信号入力整合p
n接合容量と、この各々の入力整合pn接合容量
に接続されたマイクロ波入力容量制御電極および
ローカル信号入力容量制御電極と、前記マイクロ
波入力整合インダクタンスおよび前記マイクロ波
入力整合pn接合容量に接続されたマイクロ波入
力回路と、前記ローカル信号入力整合インダクタ
ンスおよび前記ローカル信号入力整合pn接合容
量に接続されたローカル信号入力回路と、前記デ
ユアルゲートFETのドレイン電極に接続された
中間周波数信号出力回路とを同一半導体基板上に
形成したことを特徴とするモノリシツク・マイク
ロ波・デユアルゲートFETミキサ。
a dual gate FET, a microwave input matching inductance and a local signal input matching inductance connected to each of the first gate and second gate electrodes of the FET, and a microwave input matching pn connected to each of the input matching inductances; Junction capacitance and local signal input matching p
an n-junction capacitor, a microwave input capacitance control electrode and a local signal input capacitance control electrode connected to the respective input matching pn junction capacitors, and a microwave input matching inductance and a microwave input matching pn junction capacitor connected to the microwave input matching inductance and the microwave input matching pn junction capacitor. a local signal input circuit connected to the local signal input matching inductance and the local signal input matching pn junction capacitor, and an intermediate frequency signal output circuit connected to the drain electrode of the dual gate FET. A monolithic microwave dual-gate FET mixer characterized by being formed on the same semiconductor substrate.
JP18621685U 1985-12-03 1985-12-03 Pending JPS6295325U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18621685U JPS6295325U (en) 1985-12-03 1985-12-03

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18621685U JPS6295325U (en) 1985-12-03 1985-12-03

Publications (1)

Publication Number Publication Date
JPS6295325U true JPS6295325U (en) 1987-06-18

Family

ID=31135570

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18621685U Pending JPS6295325U (en) 1985-12-03 1985-12-03

Country Status (1)

Country Link
JP (1) JPS6295325U (en)

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