JPS629322Y2 - - Google Patents
Info
- Publication number
- JPS629322Y2 JPS629322Y2 JP1983064054U JP6405483U JPS629322Y2 JP S629322 Y2 JPS629322 Y2 JP S629322Y2 JP 1983064054 U JP1983064054 U JP 1983064054U JP 6405483 U JP6405483 U JP 6405483U JP S629322 Y2 JPS629322 Y2 JP S629322Y2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- substrate support
- cooling
- bottom wall
- air
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 39
- 238000001816 cooling Methods 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000000498 cooling water Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 239000013077 target material Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Description
【考案の詳細な説明】
(イ) 産業上の利用分野
本考案は、主としてイオン工学的コーテイング
技術分野で利用可能な成膜装置に関するものであ
る。[Detailed description of the invention] (a) Industrial application field The present invention relates to a film forming apparatus that can be used mainly in the field of ion-technical coating technology.
(ロ) 従来技術
スパツタリング装置などの成膜装置は、例え
ば、第１図に示すように、真空容器ａ内に、一方
の電極を兼ねる基板支持台ｂと、他方の電極を兼
ねるターゲツト材支持台ｃとを対向配置してい
る。そして、前記基板支持台ｂには、該基板支持
台ｂに装着した基板ｄを所定温度にまで予熱する
ためのヒータ等の加熱機構ｅと、前記基板ｄを成
膜終了後冷却するための冷却機構ｆとを設けてい
るのが一般的である。ところが、従来の冷却機構
ｆはパイプ材により構成した冷却コイルｇを前記
基板支持台ｂの背面に添設し、この冷却コイルｇ
内に冷却水ｈを流通させ得るようにした水冷式の
ものである。そのため、第１図に示すように、い
わゆるデポアツプ方式を採用した場合、すなわ
ち、基板支持台ｂをターゲツト材支持台ｃの上方
に配置し、この基板支持台ｂの下面側に基板ｄを
装着し得るようにした場合、種々の不都合が生じ
る。すなわち、このようにすると、冷却水の供給
を停止した場合でも、流通していた冷却水の一部
が前記冷却コイルｇ内に残留することになる。し
たがつて、加熱機構ｅに通電して基板ｄの加熱を
開始した場合に、前記冷却コイルｇ内の残留冷却
水が蒸気化することになり、危険である。また、
かかる冷却水が完全に蒸発してしまうまでは、基
板ｄの温度上昇が阻止されるため、設定温度に達
するまでに時間がかかる。換言すれば、前記加熱
機構ｅに付与する電力の一部が前記冷却水を蒸発
させるためのエネルギとして労費されてしまう。
よつてエネルギの有効な利用を図ることが難し
く、効率的な運転を行なうことができないという
問題がある。(B) Prior Art A film forming apparatus such as a sputtering apparatus, for example, as shown in FIG. 1, has a substrate support stand b that also serves as one electrode and a target material support stand that also serves as the other electrode in a vacuum vessel a. c are placed facing each other. The substrate support stand b includes a heating mechanism e such as a heater for preheating the substrate d mounted on the substrate support stand b to a predetermined temperature, and a cooling mechanism e for cooling the substrate d after film formation. Generally, a mechanism f is provided. However, in the conventional cooling mechanism f, a cooling coil g made of pipe material is attached to the back side of the substrate support base b.
It is a water-cooled type that allows cooling water h to flow inside. Therefore, as shown in Fig. 1, when the so-called depot-up method is adopted, the substrate support stand b is placed above the target material support stand c, and the substrate d is mounted on the underside of this substrate support stand b. If this is done, various inconveniences will occur. That is, in this case, even if the supply of cooling water is stopped, a portion of the circulating cooling water will remain in the cooling coil g. Therefore, when the heating mechanism e is energized to start heating the substrate d, the residual cooling water in the cooling coil g will vaporize, which is dangerous. Also,
Since the temperature of the substrate d is prevented from rising until the cooling water completely evaporates, it takes time to reach the set temperature. In other words, part of the electric power applied to the heating mechanism e is used as energy for evaporating the cooling water.
Therefore, there is a problem in that it is difficult to utilize energy effectively, and efficient operation cannot be performed.
このような事情から、現実には、第２図に示す
ような、いわゆるデポダウン方式、すなわち、基
板支持台b′をターゲツト材支持台c′の下方に配置
し、この基板支持台b′の上方側に基板ｄを装着す
るようにした方式の採用を余儀なくされてきた。
しかしながら、かかる方式を採ると、基板ｄの表
面に不純物が沈積する可能性が高くなり、良質な
薄膜を生成させるのが難しいという問題がある。 Due to these circumstances, in reality, the so-called deposit-down method as shown in Fig. 2 is used, that is, the substrate support stand b' is placed below the target material support stand c', and the substrate support stand b' is placed above the target material support stand c'. There has been no choice but to adopt a method in which the board d is mounted on the side.
However, when such a method is adopted, there is a problem that there is a high possibility that impurities will be deposited on the surface of the substrate d, and it is difficult to form a high-quality thin film.
(ハ) 目的
本考案は、このような事情に着目してなされた
もので、良質な薄膜を生成させることができ、し
かも、エネルギの労費が少なく効率的な運転を行
なうことができる成膜装置を提供することを目的
とする。(C) Purpose The present invention was developed in light of these circumstances, and is a film forming method that can produce high-quality thin films and that can be operated efficiently with low energy costs. The purpose is to provide equipment.
(ニ) 構成
本考案は、かかる目的を達成するために、デポ
アツプ方式を採用するとともに基板支持台に設け
る冷却機構を空冷式にしたことを特徴とするもの
である。すなわち、本考案に係る成膜装置は、底
壁に加熱機構を内蔵した基板支持台を真空容器内
に、その底壁下面に基板を装着し得る姿勢で配設
し、この基板支持台内に、成膜終了後その底壁の
上面側に冷却用エアーを直接に吹付ける空冷式の
冷却機構を設けたことを特徴とするものである。(d) Configuration In order to achieve the above object, the present invention is characterized by adopting a depot-up method and using an air-cooling type cooling mechanism provided on the substrate support. That is, in the film forming apparatus according to the present invention, a substrate support with a built-in heating mechanism in the bottom wall is arranged in a vacuum container in a position that allows the substrate to be mounted on the lower surface of the bottom wall, and the substrate support is placed inside the substrate support. , is characterized by being provided with an air-cooling type cooling mechanism that blows cooling air directly onto the upper surface side of the bottom wall after film formation is completed.
(ホ) 実施例
以下、本考案の一実施例を第３図を参照して説
明する。(e) Embodiment An embodiment of the present invention will be described below with reference to FIG. 3.
第３図は本考案に係る成膜装置の概略断面図で
ある。この図面に示されているように、本成膜装
置は、真空容器１内の天井部に一方の電極をなす
基板支持台２を配設するとともに、底部に他方の
電極をなすターゲツト材支持台３を設け、前記基
板支持台２の下面に装着した基板４と、前記ター
ゲツト材支持台３の上面に装着したターゲツト材
５とを上、下に対向させている。基板支持台２
は、上端２ａを真空容器１外に開口させたチヤン
バ状のもので、その底壁２ｂ内にヒータ等の加熱
機構６を設けるとともに、中空部２ｃ内に空冷式
の冷却機構７を設けている。冷却機構７は、多数
の噴口８を有したエアー噴射パイプ９を前記中空
部２ｃ内に配設し、外部に配置したエアー源１１
から吐出される空冷用エアーＡを送気パイプ１２
を介して前記エアー噴射パイプ９内に逐次供給し
得るようにしたものであり、前記エアー噴射パイ
プ９の噴口８から噴射されるエアーＡは第３図に
示すように底壁２ｂの上面に直接に吹付けられて
前記中空部２ｃ内に充満するとともに、上のもの
から順次外部へ排出されるようになつている。な
お、１３は直流電源、１４は排気系路である。 FIG. 3 is a schematic cross-sectional view of a film forming apparatus according to the present invention. As shown in this drawing, this film forming apparatus has a substrate support 2 that serves as one electrode on the ceiling of a vacuum vessel 1, and a target material support that serves as the other electrode on the bottom. 3 are provided, and the substrate 4 mounted on the lower surface of the substrate support 2 and the target material 5 mounted on the upper surface of the target material support 3 are faced upwardly and downwardly. Board support stand 2
is a chamber-shaped chamber whose upper end 2a is open to the outside of the vacuum container 1, and has a heating mechanism 6 such as a heater in its bottom wall 2b, and an air-cooled cooling mechanism 7 in its hollow part 2c. . The cooling mechanism 7 includes an air injection pipe 9 having a large number of nozzles 8 disposed within the hollow portion 2c, and an air source 11 disposed outside.
Air cooling air A discharged from the air supply pipe 12
The air A is injected from the nozzle 8 of the air injection pipe 9 directly onto the upper surface of the bottom wall 2b as shown in FIG. The particles are sprayed to fill the hollow portion 2c, and are discharged to the outside in order from the top. Note that 13 is a DC power supply, and 14 is an exhaust system path.
このような構成のものであれば、従来のものと
同様にして基板４の表面に薄膜を生成させること
ができるが、本装置では、基板支持台２をターゲ
ツト材支持台３の上方に配置し、この基板支持台
２の下面側に基板４を装着するようにしている。
そのため、不純物が前記基板４の表面に沈積する
ようなことがなく、良質な薄膜を生成させること
ができる。しかも、前記基板支持台２の冷却を空
冷式の冷却機構７により行なうようにしているの
で、前述したようなデポアツプ方式を採用しても
冷却工程が終了した後に冷却水が残留するような
ことがない。そのため、基板支持台２を加熱した
際に、残留冷却水が蒸気化するという危険性がな
い。また、このようなものであれば、過熱機構６
に供給する電力の多くが、残留冷却水を蒸気化さ
せるためのエネルギとして労費されるという不都
合がない。したがつて、前記基板支持台２の底壁
２ｂに加熱機構６を内蔵させていることと相まつ
て、基板の温度を速かに設定温度にまで上昇させ
ることが可能となり、エネルギロスの少ない効率
的な運転を行なうことができるものである。その
上、下面に基板４を保持するとともに内部に加熱
機構６を有した前記底壁２ｂに冷却用のエアーＡ
を直接に吹付けるようにしているので、冷却の効
率が高く、空冷式にしたために冷却に時間かかる
というような不具合は生じない。 With such a configuration, a thin film can be generated on the surface of the substrate 4 in the same manner as in conventional devices, but in this device, the substrate support 2 is placed above the target material support 3. , the substrate 4 is mounted on the lower surface side of the substrate support stand 2.
Therefore, impurities are not deposited on the surface of the substrate 4, and a high-quality thin film can be produced. Furthermore, since the substrate support stand 2 is cooled by the air-cooled cooling mechanism 7, even if the depot-up method described above is adopted, there is no possibility that cooling water will remain after the cooling process is completed. do not have. Therefore, there is no risk that the residual cooling water will vaporize when the substrate support stand 2 is heated. In addition, if it is like this, the overheating mechanism 6
There is no inconvenience that much of the electric power supplied to the system is spent as energy for vaporizing the residual cooling water. Therefore, together with the fact that the heating mechanism 6 is built into the bottom wall 2b of the substrate support stand 2, it becomes possible to quickly raise the temperature of the substrate to the set temperature, resulting in efficiency with less energy loss. The vehicle can be operated with ease. Moreover, cooling air A is provided to the bottom wall 2b which holds the substrate 4 on the lower surface and has a heating mechanism 6 inside.
Since it is sprayed directly, the cooling efficiency is high, and there are no problems such as the time it takes to cool down due to an air-cooled system.
なお、冷却機構の構成は図示実施例のものに限
らず、例えば、基板支持台の中空部に撹拌器を内
設しておき、その撹拌器により付勢したエアーを
基板支持台の底壁上面に直接に吹付けるようにし
たようなものであつてもよい。 Note that the configuration of the cooling mechanism is not limited to that of the illustrated embodiment; for example, a stirrer may be provided inside the hollow part of the substrate support, and air energized by the stirrer may be applied to the top surface of the bottom wall of the substrate support. It may also be something that is sprayed directly onto the surface.
また、本考案は、スパツタリング装置に限ら
ず、CVD装置等にも同様に適用が可能である。 Further, the present invention can be applied not only to sputtering equipment but also to CVD equipment and the like.
(ヘ) 効果
本考案は、以上のような構成であるから、良質
な薄膜を生成させることができ、しかも、エネル
ギの労費が少なく効率的な運転を行なうことがで
きる成膜装置を提供できるものである。(f) Effects Since the present invention has the above-described configuration, it is possible to provide a film forming apparatus that can produce a high-quality thin film and can operate efficiently with low energy costs. It is something.
第１図、第２図は従来例を示す概略断面図、第
３図は本考案の一実施例を示す概略断面図であ
る。
１……真空容器、２……基板支持台、２ｂ……
底壁、４……基板、６……加熱機構、７……冷却
機構。
1 and 2 are schematic sectional views showing a conventional example, and FIG. 3 is a schematic sectional view showing an embodiment of the present invention. 1... Vacuum container, 2... Substrate support stand, 2b...
Bottom wall, 4... substrate, 6... heating mechanism, 7... cooling mechanism.
Claims (1)
蔵させ、この基板支持台を真空容器内に、その底
壁下面に基板を装着し得る姿勢で配設し、この基
板支持台内に、成膜終了後その底壁の上面側に冷
却用エアーを直接に吹付ける空冷式の冷却機構を
設けたことを特徴とする成膜装置。 A heating mechanism is built into the bottom wall of a chamber-shaped substrate support, and this substrate support is placed in a vacuum container in a position where a substrate can be attached to the lower surface of the bottom wall. A film forming apparatus characterized by being provided with an air-cooling type cooling mechanism that blows cooling air directly onto the upper surface side of the bottom wall after the film is finished.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6405483U JPS59169354U (en) | 1983-04-29 | 1983-04-29 | Film forming equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6405483U JPS59169354U (en) | 1983-04-29 | 1983-04-29 | Film forming equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59169354U JPS59169354U (en) | 1984-11-13 |
| JPS629322Y2 true JPS629322Y2 (en) | 1987-03-04 |
Family
ID=30194239
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6405483U Granted JPS59169354U (en) | 1983-04-29 | 1983-04-29 | Film forming equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59169354U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55100973A (en) * | 1979-01-23 | 1980-08-01 | Ricoh Co Ltd | Heating of base plate in vacuum deposition |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5489350U (en) * | 1977-12-07 | 1979-06-25 |
-
1983
- 1983-04-29 JP JP6405483U patent/JPS59169354U/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55100973A (en) * | 1979-01-23 | 1980-08-01 | Ricoh Co Ltd | Heating of base plate in vacuum deposition |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59169354U (en) | 1984-11-13 |
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