JPS629231B2 - - Google Patents
Info
- Publication number
- JPS629231B2 JPS629231B2 JP56006309A JP630981A JPS629231B2 JP S629231 B2 JPS629231 B2 JP S629231B2 JP 56006309 A JP56006309 A JP 56006309A JP 630981 A JP630981 A JP 630981A JP S629231 B2 JPS629231 B2 JP S629231B2
- Authority
- JP
- Japan
- Prior art keywords
- photoconductor
- electrodes
- optical
- shows
- exposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000003287 optical effect Effects 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 239000002184 metal Substances 0.000 description 5
- 239000012212 insulator Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
Description
【発明の詳細な説明】
本発明は、光学情報の良好な検出率を得ること
ができる光学読取センサに関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an optical reading sensor that can obtain a good detection rate of optical information.
従来の光導電形光学読取センサ素子を第１図に
示す。第１図において１―１は光導電体、１―２
と１―３は両電極、１―４は絶縁体基板、矢印Ｙ
は光の照射を示す。第２図は第１図で示した光学
読取センサに断面が円形の光が照射している様子
を示し、２―１は光導電体部、２―２と２―３は
両電極の如く構成されており、円ａ，ｂ，ｃ，
ｄ，ｅ，ｆはそれぞれ円形の露光した部分であ
る。第２図において、円ａの如く露光した場合、
ａ内の光導電体部は導電率が極端に大きくなり、
両電極間に接するので、光学情報を検出すること
ができる。ところがａ〜ｆのいずれかが露光して
も、またｃとｄが同時に露光しても光学情報を得
る事はできない。円ｂのような小さな露光を検出
するには光導電体の幅ｌを小さくすればよい。し
かし、ｌは小さくしても、円ｅ，ｆのような電極
部だけに照射された光は検出することができず、
しかも素子の大きさつまりｘ，ｙの長さは、制作
上ある程度以下にすることができないので、必然
的な読み落としが存在するという欠点があつた。 A conventional photoconductive type optical reading sensor element is shown in FIG. In Figure 1, 1-1 is a photoconductor, 1-2
and 1-3 are both electrodes, 1-4 is an insulator substrate, arrow Y
indicates light irradiation. Figure 2 shows the optical reading sensor shown in Figure 1 being irradiated with light having a circular cross section, where 2-1 is a photoconductor section, and 2-2 and 2-3 are composed of both electrodes. and circles a, b, c,
d, e, f are circular exposed parts, respectively. In Figure 2, when exposed as shown in circle a,
The photoconductor part in a has an extremely high conductivity,
Since the two electrodes are in contact with each other, optical information can be detected. However, even if any one of a to f is exposed, or even if c and d are exposed simultaneously, no optical information can be obtained. To detect a small exposure such as circle b, the width l of the photoconductor can be made small. However, even if l is small, the light irradiated only on the electrode parts like circles e and f cannot be detected.
Moreover, since the size of the element, that is, the x and y lengths, cannot be made smaller than a certain level due to manufacturing reasons, there is a drawback that there is an inevitable omission in reading.
従つて本発明は従来の技術の上記欠点を改善す
るもので、その目的は光学センサ素子の両電極に
達する連続した露光がなくても光学情報をよみと
ることにより読み落しを低減する光学読取センサ
を提供することにあり、その特徴は、絶縁基板
と、その上にもうけられる光導電体材料と、該光
導電体材料の両端に形成される１対の電極とを有
する光学読取センサにおいて、絶縁基板と光導電
体材料との間に導電層が、光導電体材料の受光面
のほぼ全面に対向して、前記電極に接触しないよ
うにもうけられるごとき光学読取センサにある。
以下図面により実施例を説明する。 SUMMARY OF THE INVENTION Accordingly, the present invention aims to improve the above-mentioned drawbacks of the prior art, and its object is to provide an optical reading sensor that reduces reading errors by reading optical information without the need for continuous exposure to reach both electrodes of an optical sensor element. The present invention is to provide an optical reading sensor having an insulating substrate, a photoconductor material formed thereon, and a pair of electrodes formed at both ends of the photoconductor material. In such an optical read sensor, a conductive layer is provided between the substrate and the photoconductor material, facing substantially the entire light-receiving surface of the photoconductor material and not contacting the electrode.
Examples will be described below with reference to the drawings.
第３図は本発明の第１の実施例であつて、３―
１は光導電体部、３―２と３―３は両電極、３―
４は導体金属膜、３―５は絶縁体基板であり、矢
印Ｙは、光の照射を示す。第４図は第３図で示さ
れた実施例の動作を示すものであり、４―１は光
導電体、４―２・４―３は両電極、４―４は導体
金属膜、４―５は絶縁体基板であり、ａ，ｂ，ｃ
は光の照射部、b′，c′は導電率が大きくなつた光
導電体部を示す。第４図において円ａの如く露光
すると、第２図における露光ａと同様にして光学
情報を得ることができる。さらに、第４図におい
てｂ，ｃが同時に露光された場合を考えると、
ｂ，ｃの露光によりb′，c′の光導電体部の導電率
が増し、両電極は、b′，c′、導体金属部４―４を
経て導通し、光学情報を得ることができる。 FIG. 3 shows the first embodiment of the present invention.
1 is a photoconductor part, 3-2 and 3-3 are both electrodes, 3-
4 is a conductive metal film, 3-5 is an insulating substrate, and arrow Y indicates light irradiation. FIG. 4 shows the operation of the embodiment shown in FIG. 3, where 4-1 is a photoconductor, 4-2 and 4-3 are both electrodes, 4-4 is a conductive metal film, and 4- 5 is an insulating substrate, a, b, c
indicates the light irradiated area, and b' and c' indicate the photoconductor areas with increased conductivity. When exposed as indicated by circle a in FIG. 4, optical information can be obtained in the same manner as exposure a in FIG. Furthermore, considering the case where b and c are exposed at the same time in Fig. 4,
Due to the exposure of b and c, the conductivity of the photoconductor parts b' and c' increases, and both electrodes are electrically connected via b', c' and the conductive metal part 4-4, allowing optical information to be obtained. .
以上説明したように、第１の実施例では両電極
間に達する光導電体部が連続して露光されなくと
も、両電極に接する光導電体の一部が同時に露光
されるだけでも光学情報を得ることができるの
で、読み落としを低減させることができる利点が
ある。 As explained above, in the first embodiment, even if the photoconductor portion that reaches between both electrodes is not exposed continuously, optical information can be obtained even if only a part of the photoconductor that is in contact with both electrodes is exposed simultaneously. Therefore, there is an advantage that reading errors can be reduced.
第１の実施例において両電極の形状は従来のも
のと同じであるが、第５図に示す如く両電極を作
成することにより、第１の実施例における効果以
上の効果が生じる。第５図において、ａは両電極
が交叉歯状に構成されており、ｂは両電極が渦巻
き状に構成されており、５―１は光導電体、５―
２・５―３は両電極、５―４は光導電体、５―
５・５―６は両電極である。 In the first embodiment, the shapes of both electrodes are the same as those of the conventional one, but by forming both electrodes as shown in FIG. 5, an effect greater than that of the first embodiment is produced. In FIG. 5, a shows a structure in which both electrodes are arranged in a cross-toothed shape, a shows a structure in which both electrodes are formed in a spiral shape, a shows a photoconductor in FIG.
2.5-3 is both electrodes, 5-4 is photoconductor, 5-
5.5-6 are both electrodes.
本発明は露光部が光導電体をはさむ両電極に達
しなくても光を検出することができ、読み落とし
を低減させることができる利点があり、OCR、
フアクシミリ等の読み取り効率のよい光学読取セ
ンサに利用することができる。 The present invention has the advantage that light can be detected even if the exposed part does not reach both electrodes sandwiching the photoconductor, and that reading errors can be reduced.
It can be used in optical reading sensors with high reading efficiency such as facsimiles.
第１図は従来の光導電形光学読取センサ素子、
第２図は従来の光学読取センサ素子の動作説明、
第３図は本発明の第１の実施例、第４図は第１の
実施例における動作説明、第５図は本発明の第２
の実施例である。
１―１……光導電体部、１―２・１―３……両
電極、１―４……絶縁体基板、Ｙ……光の照射、
２―１……光導電体部、２―２・２―３……両電
極、ａ，ｂ，ｃ，ｄ，ｅ，ｆ……光の照射、ｌ…
…光導電体の幅、ｘ，ｙ……センサ素子のサイ
ズ、３―１……光導電体部、３―２・３―３……
両電極、３―４……金属膜、３―５……絶縁体基
板、Ｙ……光の照射、４―１……光導電体部、４
―２・４―３……両電極、４―４……金属膜、４
―５……絶縁体基板、ａ，ｂ，ｃ……光の照射、
b′，c′……ｂ，ｃによる露光で導電率の増した光
導電体部、５―１……光導電体部、５―２・５―
３……両電極、５―４……光導電体部、５―５・
５―６……両電極、ａ……両電極が交叉歯状に配
置されているセンサ素子、ｂ……両電極が渦巻状
に配置されているセンサ素子。
Figure 1 shows a conventional photoconductive optical reading sensor element.
Figure 2 explains the operation of a conventional optical reading sensor element.
Fig. 3 shows the first embodiment of the present invention, Fig. 4 explains the operation in the first embodiment, and Fig. 5 shows the second embodiment of the invention.
This is an example. 1-1...Photoconductor part, 1-2/1-3...Both electrodes, 1-4...Insulator substrate, Y...Light irradiation,
2-1...Photoconductor portion, 2-2/2-3...Both electrodes, a, b, c, d, e, f...Light irradiation, l...
...Width of photoconductor, x, y...Size of sensor element, 3-1...Photoconductor portion, 3-2, 3-3...
Both electrodes, 3-4...Metal film, 3-5...Insulator substrate, Y...Light irradiation, 4-1...Photoconductor portion, 4
-2・4-3...Both electrodes, 4-4...Metal film, 4
-5... Insulator substrate, a, b, c... Light irradiation,
b', c'...Photoconductor part with increased conductivity due to exposure by b, c, 5-1...Photoconductor part, 5-2, 5-
3...Both electrodes, 5-4...Photoconductor portion, 5-5.
5-6...Both electrodes, a...Sensor element in which both electrodes are arranged in a crisscross pattern, b...Sensor element in which both electrodes are arranged in a spiral pattern.
Claims (1)
材料と、該光導電体材料の両端に形成される１対
の電極とを有する光学読取センサにおいて、絶縁
基板と光導電体材料との間に導電層が、光導電体
材料の受光面のほゞ全面に対向して、前記電極に
接触しないようにもうけられることを特徴とする
光学読取センサ。1. In an optical reading sensor having an insulating substrate, a photoconductor material formed thereon, and a pair of electrodes formed at both ends of the photoconductor material, there is a gap between the insulating substrate and the photoconductor material. An optical reading sensor characterized in that a conductive layer is provided so as to face substantially the entire light-receiving surface of the photoconductor material so as not to come into contact with the electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56006309A JPS57120811A (en) | 1981-01-21 | 1981-01-21 | Optical reading sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56006309A JPS57120811A (en) | 1981-01-21 | 1981-01-21 | Optical reading sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57120811A JPS57120811A (en) | 1982-07-28 |
| JPS629231B2 true JPS629231B2 (en) | 1987-02-27 |
Family
ID=11634765
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56006309A Granted JPS57120811A (en) | 1981-01-21 | 1981-01-21 | Optical reading sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57120811A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59167054A (en) * | 1983-03-11 | 1984-09-20 | Mitsubishi Electric Corp | Photoelectric conversion device |
-
1981
- 1981-01-21 JP JP56006309A patent/JPS57120811A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57120811A (en) | 1982-07-28 |
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