JPS628492B2 - - Google Patents
Info
- Publication number
- JPS628492B2 JPS628492B2 JP57167144A JP16714482A JPS628492B2 JP S628492 B2 JPS628492 B2 JP S628492B2 JP 57167144 A JP57167144 A JP 57167144A JP 16714482 A JP16714482 A JP 16714482A JP S628492 B2 JPS628492 B2 JP S628492B2
- Authority
- JP
- Japan
- Prior art keywords
- ppm
- boron
- capacitance
- foil
- content
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- 239000011888 foil Substances 0.000 claims description 19
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 13
- 229910052796 boron Inorganic materials 0.000 claims description 13
- 239000003990 capacitor Substances 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 10
- 230000000694 effects Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000005097 cold rolling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000005098 hot rolling Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011573 trace mineral Substances 0.000 description 1
- 235000013619 trace mineral Nutrition 0.000 description 1
- WYXIGTJNYDDFFH-UHFFFAOYSA-Q triazanium;borate Chemical compound [NH4+].[NH4+].[NH4+].[O-]B([O-])[O-] WYXIGTJNYDDFFH-UHFFFAOYSA-Q 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Conductive Materials (AREA)
Description
この発明は、電解コンデンサ電極用アルミニウ
ム合金箔に関する。
なお、この明細書において「%」はいずれも
「重量%」を示すものとする。
電解コンデンサ用の電極として使用されるアル
ミニウム箔は、その実効表面積を拡大して単位体
積当りの静電気容量を増大するため、一般に塩酸
溶液、食塩溶液等の溶液中でエツチング処理が施
される。そこで、電解コンデンサの性能の向上を
はかるためには、上記箔材料として、エツチング
処理により可及的大なる拡面率が得られるもので
あることが要請される。この拡面率はもちろんエ
ツチング条件にも左右されるが、材料箔の組成に
も大きく左右され、その組成如何によつては箔の
溶解量が過多になり、所謂表面溶解を起こして著
しい静電容量の低下を招くことがある。
この発明の目的は、このような表面溶解を防止
して、常に安定した優れたエツチング特性を示
し、機械的強度を低下せしめることなく静電容量
の一層の増大をはかりうる電解コンデンサ電極用
アルミニウム合金箔を提供することにある。
而してこの発明は、ホウ素の微量含有によつて
アルミニウム合金箔のエツチング特性の安定化を
はかりうることを見出すことにより、この知見に
基づいて完成されたものである。
即ち、この発明にかかる電解コンデンサ電極用
アルミニウム合金箔は、アルミニウムの純度が
99.9%以上であり、かつホウ素を50ppmを超え
300ppm以下の範囲で含有し、不純物としのチタ
ンの含有量が2ppm未満に規制されてなることを
特徴とするものである。
箔中のホウ素の含有量が50ppm以下では、そ
の単独添加によつて所期するエツチング特性の向
上効果、ひいては静電容量の増大効果を充分に実
現することができない。一方逆にその含有量が
300ppmを超えるときは、箔の表面が深くかつ粗
くエツチングされ、かえつて静電容量の低下傾向
を示すと共に、腐食減量の増大により強度低下を
招く。従つて、ホウ素の箔中含有量は50ppmを
超え300ppm以下の範囲に限定され、特に好まし
い範囲は60〜100ppm程度である。
一方、電解コンデンサ電極用アルミニウム合金
箔材料として、一般にアルミニウム純度が99.9%
以上要求されることは、周知のとおりであり、可
及的高純度のものの方が好ましいことはいうまで
もない。従つて、この発明に係るアルミニウム合
金箔は、ホウ素の含有のほかに、不可避不純物と
して例えば銅、鉄、ケイ素等他の諸元素を0.01%
未満の範囲で含むことは当然許容される。また、
従来この種のコンデンサ電極用アルミニウム合金
箔として、単位面積当りのエツチング孔の数を増
大せしめるために、積極的に他の微量元素を添加
含有せしめることも行われているが、この発明
は、ホウ素の含有のほかに、斯る強制添加元素を
付加的に含む場合もその範囲に包含される。斯る
元素としては、例えばストロンチウム、バナジウ
ム、マンガン、マグネシウム、亜鉛、インジウ
ム、錫、鉛、ビスマス、銀、ガリウム、カドミウ
ム、ジルコニウム、トリウム等が挙げられ、その
含有量は一般的に0.1〜5000wt−ppmの範囲内で
ある。ホウ素のほかにこれらの元素を含有する場
合には、効果として、ホウ素と他の元素とのそれ
ぞれのもつ効果が単に総和的にあらわれる場合の
ほか、それ以上の相乗的効果が期待される場合も
予測されるが、この発明はそのいずれの場合も、
ホウ素含有による効果が実現されている以上、そ
の範囲に包含されるものである。
従来、アルミニウム電極箔において、その材料
金中に不可避的に不純物として含まれるチタンの
含有が、静電容量を低下する支配的な要因となる
ことに鑑み、該チタンの多くの含有を許容しつ
つ、静電容量を良好に保つべく、チタンとの共存
下にホウ素を強制添加するという技術が提案され
ている(例えば特開昭53−107657号、特開昭53−
113212号)。これに対して、本発明は、むしろチ
タンを実質的に含有せしめないものとしながら、
ホウ素を含有せしめることによつて、それ単独に
よる効果として一段と優れた静電容量の増大効果
をあげているものである。従つて、この発明の合
金箔において、チタンの含有は、不純物としての
それも極微量の範囲に規制されるものであり、具
体的には2ppm未満に規定されるものであつて、
これを超えるときは、本発明の所期する静電容量
の増大効果が低減される。
次に、この発明の実施例を示す。
The present invention relates to an aluminum alloy foil for electrolytic capacitor electrodes. In this specification, all "%" means "% by weight". Aluminum foils used as electrodes for electrolytic capacitors are generally etched in a solution such as a hydrochloric acid solution or a saline solution in order to expand their effective surface area and increase their electrostatic capacitance per unit volume. Therefore, in order to improve the performance of electrolytic capacitors, the foil material is required to have as large an area enlargement ratio as possible through etching. This area expansion ratio naturally depends on the etching conditions, but it also depends greatly on the composition of the material foil. This may lead to a decrease in capacity. The object of the present invention is to provide an aluminum alloy for electrolytic capacitor electrodes that can prevent such surface dissolution, always exhibit stable and excellent etching properties, and further increase capacitance without reducing mechanical strength. The purpose is to provide foil. The present invention was completed based on the discovery that the etching characteristics of aluminum alloy foil can be stabilized by containing a small amount of boron. That is, the aluminum alloy foil for electrolytic capacitor electrodes according to the present invention has a high purity of aluminum.
99.9% or more and contains more than 50ppm of boron
It is characterized in that the content is within a range of 300 ppm or less, and the content of titanium as an impurity is regulated to less than 2 ppm. If the content of boron in the foil is less than 50 ppm, the desired effect of improving etching characteristics and, by extension, increasing capacitance cannot be sufficiently achieved by adding boron alone. On the other hand, the content
When it exceeds 300 ppm, the surface of the foil is deeply and roughly etched, which tends to decrease the capacitance, and also causes a decrease in strength due to increased corrosion loss. Therefore, the content of boron in the foil is limited to a range of more than 50 ppm and less than 300 ppm, and a particularly preferable range is about 60 to 100 ppm. On the other hand, as an aluminum alloy foil material for electrolytic capacitor electrodes, aluminum purity is generally 99.9%.
The above requirements are well known, and it goes without saying that it is preferable to have as high a purity as possible. Therefore, in addition to containing boron, the aluminum alloy foil according to the present invention contains 0.01% of other elements such as copper, iron, and silicon as inevitable impurities.
It is of course permissible to include it within the range below. Also,
Conventionally, this type of aluminum alloy foil for capacitor electrodes has been actively added with other trace elements in order to increase the number of etched holes per unit area. In addition to the inclusion of these forcibly added elements, the scope also includes cases where such forcibly added elements are additionally included. Examples of such elements include strontium, vanadium, manganese, magnesium, zinc, indium, tin, lead, bismuth, silver, gallium, cadmium, zirconium, thorium, etc., and the content thereof is generally 0.1 to 5000 wt- Within ppm range. When these elements are contained in addition to boron, the effect may not only be the sum of the effects of boron and other elements, but also a more synergistic effect may be expected. As expected, this invention will
As long as the effect of containing boron is achieved, it is included within this range. Conventionally, in aluminum electrode foils, in view of the fact that the inclusion of titanium, which is unavoidably included as an impurity in the material gold, is a dominant factor in reducing capacitance, the content of titanium is allowed to be large. In order to maintain good capacitance, a technique has been proposed in which boron is forcibly added in coexistence with titanium (for example, JP-A-53-107657, JP-A-Sho 53-
113212). On the other hand, the present invention rather does not contain titanium substantially, but
By incorporating boron, the capacitance is increased even more effectively than by itself. Therefore, in the alloy foil of the present invention, the content of titanium as an impurity is limited to a very small amount, specifically less than 2 ppm.
If it exceeds this, the capacitance increasing effect intended by the present invention is reduced. Next, examples of this invention will be shown.
【表】
表1に示す各種組成のアルミニウム合金スラブ
を600℃で均質化処理し、500℃で厚さ5mmに熱間
圧延後、90μmに冷間圧延し、次いで300℃で焼
鈍した各種アルミニウム合金箔を試料とした。
そしてこれらの各試料箔を、浴温50℃の5%塩
酸+0.1%硝酸水溶液中で、0.8A/cmPAの電流を
通じて5分30秒間エツチングを行い、次いで液温
85℃の5%ホウ酸水溶液中で化成電圧20V、印加
時間10分の化成処理を行い、それぞれの試料のも
つ静電容量及び引張り強度を測定した。なお、静
電容量の測定は、液温30℃の10%ホウ酸アンモニ
ウム水溶液中において、測定周波数を120Hzに設
定して行つた。測定結果を表2に示す。[Table] Various aluminum alloys made by homogenizing aluminum alloy slabs with various compositions shown in Table 1 at 600°C, hot rolling at 500°C to a thickness of 5 mm, cold rolling to 90 μm, and then annealing at 300°C. The foil was used as a sample. Each of these sample foils was etched in a 5% hydrochloric acid + 0.1% nitric acid aqueous solution with a bath temperature of 50°C for 5 minutes and 30 seconds through a current of 0.8A/cmPA, and then the temperature of the solution was lowered.
A chemical conversion treatment was performed in a 5% boric acid aqueous solution at 85° C. with a chemical conversion voltage of 20 V and an application time of 10 minutes, and the capacitance and tensile strength of each sample were measured. The capacitance was measured in a 10% ammonium borate aqueous solution at a liquid temperature of 30° C., with the measurement frequency set at 120 Hz. The measurement results are shown in Table 2.
【表】
上表の結果に見られるように、この発明による
アルミニウム合金箔はホウ素の含有量50ppmを
境として、該50ppmを越え、300ppm以下の範囲
で含有する場合、機械的強度の低下を招くことな
く静電容量の増大効果を得ることができるもので
あり、電解コンデンサ電極用として優れた性能を
有するものである。[Table] As seen in the results in the table above, the aluminum alloy foil according to the present invention has a boron content of more than 50 ppm and less than 300 ppm, which leads to a decrease in mechanical strength. It is possible to obtain the effect of increasing capacitance without any interference, and has excellent performance as an electrolytic capacitor electrode.
Claims (1)
つホウ素を50ppmを超え300ppm以下の範囲で含
有し、不純物としてのチタンの含有量が2ppm未
満に規制されてなることを特徴とする電解コンデ
ンサ電極用アルミニウム合金箔。1. Aluminum for electrolytic capacitor electrodes, characterized in that the purity of aluminum is 99.9% or more, boron is contained in a range of more than 50 ppm and less than 300 ppm, and the content of titanium as an impurity is regulated to less than 2 ppm. Alloy foil.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16714482A JPS5956560A (en) | 1982-09-24 | 1982-09-24 | Aluminum alloy foil for electrode of electrolytic capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16714482A JPS5956560A (en) | 1982-09-24 | 1982-09-24 | Aluminum alloy foil for electrode of electrolytic capacitor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5956560A JPS5956560A (en) | 1984-04-02 |
JPS628492B2 true JPS628492B2 (en) | 1987-02-23 |
Family
ID=15844232
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16714482A Granted JPS5956560A (en) | 1982-09-24 | 1982-09-24 | Aluminum alloy foil for electrode of electrolytic capacitor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5956560A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5573861A (en) * | 1993-07-06 | 1996-11-12 | Sumitomo Chemical Co., Ltd. | High purity aluminum conductor used at ultra low temperature |
FR2707420B1 (en) * | 1993-07-07 | 1996-05-15 | Sumitomo Chemical Co | High purity aluminum conductor used at very low temperatures. |
JP2907718B2 (en) * | 1993-12-29 | 1999-06-21 | 昭和アルミニウム株式会社 | Etching method of aluminum foil for electrolytic capacitor electrode |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53125920A (en) * | 1977-04-11 | 1978-11-02 | Mitsubishi Keikinzoku Kogyo | Aluminum anode foil for electrolytic capacitor |
-
1982
- 1982-09-24 JP JP16714482A patent/JPS5956560A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53125920A (en) * | 1977-04-11 | 1978-11-02 | Mitsubishi Keikinzoku Kogyo | Aluminum anode foil for electrolytic capacitor |
Also Published As
Publication number | Publication date |
---|---|
JPS5956560A (en) | 1984-04-02 |
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