JPS6280326U - - Google Patents
Info
- Publication number
- JPS6280326U JPS6280326U JP17177085U JP17177085U JPS6280326U JP S6280326 U JPS6280326 U JP S6280326U JP 17177085 U JP17177085 U JP 17177085U JP 17177085 U JP17177085 U JP 17177085U JP S6280326 U JPS6280326 U JP S6280326U
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- reaction tube
- film production
- semiconductor epitaxial
- epitaxial thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- 125000002524 organometallic group Chemical group 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 239000012159 carrier gas Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Description
第１図は本考案のＭＯＣＶＤ装置の概要を示す
構成図、第２図は従来のＭＯＣＶＤ装置の概要を
示す構成図、第３図は多層エピタキシヤル薄膜の
断面図である。
１……ＴＭＧ、２……ＴＭＡ、３……水素、６
……反応管、７……ＡｓＨ３、１１，１８……電
源、１２……高周波コイル、１３……排気系、１
６……基板、１７……高速赤外線加熱炉。
FIG. 1 is a block diagram showing an outline of the MOCVD apparatus of the present invention, FIG. 2 is a block diagram showing an outline of a conventional MOCVD apparatus, and FIG. 3 is a cross-sectional view of a multilayer epitaxial thin film. 1...TMG, 2...TMA, 3...Hydrogen, 6
... Reaction tube, 7 ... AsH 3 , 11, 18 ... Power supply, 12 ... High frequency coil, 13 ... Exhaust system, 1
6...Substrate, 17...High speed infrared heating furnace.
Claims (1)
反応管に輸送するガス供給経路と反応管内に流入
された有機金属ガスを熱分解する高温加熱装置と
を備えた半導体エピタキシヤル薄膜製造装置であ
つて、高温加熱装置として高速赤外線加熱炉を用
いたことを特徴とする半導体エピタキシヤル薄膜
製造装置。 A semiconductor epitaxial thin film production apparatus comprising a gas supply path for transporting two or more types of organometallic gases to a reaction tube by means of a carrier gas and a high-temperature heating device for thermally decomposing the organometallic gases flowing into the reaction tube, the apparatus comprising: A semiconductor epitaxial thin film production device characterized by using a high-speed infrared heating furnace as a heating device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17177085U JPS6280326U (en) | 1985-11-08 | 1985-11-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17177085U JPS6280326U (en) | 1985-11-08 | 1985-11-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6280326U true JPS6280326U (en) | 1987-05-22 |
Family
ID=31107703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17177085U Pending JPS6280326U (en) | 1985-11-08 | 1985-11-08 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6280326U (en) |
-
1985
- 1985-11-08 JP JP17177085U patent/JPS6280326U/ja active Pending
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