JPS6279956A - Fixing method for wafer in semi-conductor manufacturing process - Google Patents

Fixing method for wafer in semi-conductor manufacturing process

Info

Publication number
JPS6279956A
JPS6279956A JP60221343A JP22134385A JPS6279956A JP S6279956 A JPS6279956 A JP S6279956A JP 60221343 A JP60221343 A JP 60221343A JP 22134385 A JP22134385 A JP 22134385A JP S6279956 A JPS6279956 A JP S6279956A
Authority
JP
Japan
Prior art keywords
wafer
plate
water
adhesion
ice
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60221343A
Other languages
Japanese (ja)
Inventor
Shigeo Yokoyama
横山 成男
Kan Iwaki
貫 岩木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Heavy Industries Ltd
Original Assignee
Mitsubishi Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Heavy Industries Ltd filed Critical Mitsubishi Heavy Industries Ltd
Priority to JP60221343A priority Critical patent/JPS6279956A/en
Publication of JPS6279956A publication Critical patent/JPS6279956A/en
Pending legal-status Critical Current

Links

Landscapes

  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

PURPOSE:To facilitate the adhesion, leveling, and peeling of a wafer so as to shorten the operating time and reduce the cost of a drug and the like, by attaching wafer on a plate and then fixing the wafer thereon for cooling it under the freezing point so as to make the wafer adhere to the plate. CONSTITUTION:As clean water is attached on the surface of a plate 3 and a wafer 1 is fixed thereon, the water wets both surfaces of the plate 3 and the wafer 1 so as to form uniform water screen therebetween. And, the plate 3 is cooled for freezing the water so as to form ice 5 so that the wafer 1 and the plate 3 are fixed with each other. Then, the water 1 is polished, being cooled by a cooling module 4, and thereafter the ice 5 is fused by the heat of heating wind or the like so that the wafer 1 is peeled from the plate 3. Therefore, the adhesion of the wafer 1 to the plate 3, the levering and adhesion thereof are facilitate so that the operating time can be shortened. Further, drug and the like for the adhesion is not necessary, thereby it is possible to reduce the manufacturing cost.

Description

【発明の詳細な説明】 〔産業上の利用分e〕 本発明は半導体製造工程のウェハ研磨時におけるウェハ
の固定方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application e] The present invention relates to a method for fixing a wafer during wafer polishing in a semiconductor manufacturing process.

〔従来の技術〕[Conventional technology]

半導体製造工程のウェハ研磨時に於けるウェハの固定に
は、WAX (ワックス)あるいは有機系接着剤(エポ
キシ糸等)音用いて下地プレートに付着させる方法が従
来より行なわれていたO ウェハの直径は現!5インチが玉流であり。
The conventional method of fixing the wafer during wafer polishing in the semiconductor manufacturing process was to attach wax or organic adhesive (epoxy thread, etc.) to the base plate using sound. Now! 5 inches is the best size.

近年、6インチの大口径のものが出現しつつある。その
厚さは数μ〜数n程度であり、そのため、接着剤を剥離
する際には薄膜のため破損する虞れがある。
In recent years, large-diameter devices of 6 inches have been appearing. The thickness thereof is approximately several μ to several nanometers, and therefore, when the adhesive is peeled off, there is a risk of damage due to the thin film.

〔考案が解決しようとする間頂点〕[Apex while the idea is trying to solve]

従来のWAXあるいは接着剤によるウェハの固定には貼
付けに手間がかかる。即ち、WAX。
Conventional methods of fixing wafers using wax or adhesives require time and effort. That is, WAX.

接着剤によるウェハのレベル化の友めの調製に注意を拡
い、長時間の作業時間を要し、また。
The preparation of wafer leveling with adhesive requires a lot of attention, and also requires a long working time.

接着剤等では研磨修了後の剥離に溶剤の使用が不可欠で
、これらの接着剤、WA、l(、溶剤等のコストに相当
慮費す。ま皮接N則の剥離には長時間の手間を要し、そ
のp、*磯溶剤を一用いるため1作業環境の改侵等を特
徴とする特に剥離後、ウニ八表面上に不純物として存在
するWAXあるいは接着剤の痕跡を除去して洗浄する際
にも長時間の手間を要しamめて#雑なるものである。
For adhesives, etc., it is essential to use a solvent to remove them after polishing is completed, and the cost of these adhesives, WA, l(, solvent, etc.) must be considered.Removal using the N rule of skin contact requires a long time and effort. 1. Since the sea urchin solvent is used, 1. It is characterized by tampering with the working environment. In particular, after peeling, traces of wax or adhesive present as impurities on the surface of the sea urchin are removed and cleaned. In some cases, it requires a lot of time and effort and is very tedious.

このように、WAXお接着剤などによるウェハの固定上
の問題点の解決には、ウェハの貼付は手間の減少、接着
したものの剥離過程の省力化、洗浄時間の短縮化等が必
要である。
As described above, in order to solve the problems associated with fixing wafers using wax adhesives and the like, it is necessary to reduce the labor involved in attaching wafers, to save labor in the process of peeling off the adhesive, and to shorten cleaning time.

〔間4点を解決するための手段〕 上述し九間呟点を解決するtめに本発明に於いては、W
んXあるいは接着剤に代って氷による接着方法を実現し
た。即ち、プレート上に水を付着させ、その上にクエへ
を固定した後、プレートi氷点下の温度まで冷却させて
水を凍らせ、ウェハとプレー)t−接着させる。その後
[Means for solving the four points in between] In order to solve the above-mentioned four points, in the present invention, W.
We realized an adhesive method using ice instead of adhesive. That is, after water is deposited on the plate and the wafer is fixed thereon, the plate is cooled to a temperature below freezing to freeze the water and bonded to the wafer. after that.

ウェハのIリックングエat−終了して、熱JgLm熱
等により氷を融解させてウエノSt−プレートから剥離
させる。
After finishing the licking of the wafer, the ice is melted by heat or the like and peeled off from the Ueno plate.

〔作用〕[Effect]

上記氷の接着による接着力は、−10℃では10にり/
dからSOKノ/dにわたり、WAXによる接着力(数
?/cI/1) 、あるいは接層剤による接着力(10
〜300す/d)の匝と比較して/ IJッシング作業
上のウェハ固定の九めの保持力には十分である。氷の接
着力は、−10付近で最大(直を示す几め、プレートお
よびウェハ接着面の温度を一10℃程度まで降下させる
必要がある。また熱風等による加熱によって氷を融解さ
せてウェハをプレートから剥離させる(80 catl
 & )およびプレートとウェハの加温(Cu 0.9
call&  、 Sj 1.8cal/ y)CDf
cめの熟慮が必要である。尚、Iv却によるウェハの歪
に関しては、ウェハの材料であるシリコンの線膨張係数
が、メタルと比較して1桁小さいので歪は小さく1間d
はない。
The adhesion force due to the above ice adhesion is 10/1 at -10°C.
From d to SOK/d, the adhesive force by WAX (number?/cI/1) or the adhesive force by adhesive (10
~300 m/d) is sufficient for holding the wafer in place during IJ shing operations. The adhesion force of ice is at its maximum at around -10°C, so it is necessary to lower the temperature of the plate and wafer bonding surface to about -10°C.Also, the ice can be melted by heating with hot air, etc., and the wafer can be attached. Peel from the plate (80 catl
& ) and plate and wafer heating (Cu 0.9
call & , Sj 1.8cal/y)CDf
It is necessary to give careful consideration to c. Regarding distortion of the wafer due to IV heating, the coefficient of linear expansion of silicon, which is the material of the wafer, is one order of magnitude smaller than that of metal, so the distortion is small and only 1 d.
There isn't.

〔実施列〕[Implementation row]

半4#本ウェハを研磨する目的で氷の接層技術にエリウ
ェハ七プレートに固定する方法を嘉1図+8) 、 (
blに示す。
For the purpose of polishing a semi-4# wafer, the method of fixing the wafer to the seventh plate using the ice layer technique is shown in Figure 1 + 8), (
Shown in bl.

まずプレート30表口上に清浄な水2を付着させ、次に
、その上にウェハ1會固定する。水2はプレート3とク
エへ1の両表面を濡らし。
First, clean water 2 is applied to the front surface of the plate 30, and then a wafer is fixed thereon. Water 2 wets both surfaces of plate 3 and cube 1.

ウェハ1とプレート3間に均一な水膜が形底される(第
1図(a))。
A uniform water film is formed between the wafer 1 and the plate 3 (FIG. 1(a)).

次に、プレート3を冷却して水2t−凝固させ。Next, the plate 3 is cooled to solidify 2t of water.

氷5を形取させる。この温度1に一10℃に保つ。Have ice 5 cut into shape. Maintain this temperature at 1-10°C.

氷5はウェハ1およびプレート3を固着させる。Ice 5 sticks wafer 1 and plate 3 together.

そして冷却モジエール4VCよる冷却を続けながらウェ
ハ1の研磨を行なう(嘉x[Vfbl)。
Then, the wafer 1 is polished while continuing cooling by the cooling module 4VC (Vfbl).

研磨終了後、熱風等の加熱により氷5を融解させて、ウ
ェハ11cプレート3から剥離させる。
After polishing, the ice 5 is melted by heating with hot air or the like, and the wafer 11c is peeled off from the plate 3.

尚、上記実施列では冷却モジュール4t−棒状としてい
るが、プレート30面部に均一に冷却モジエールを配設
した構造とすることにエリ。
In the above embodiment, the cooling module 4t is rod-shaped, but it is preferable to have a structure in which the cooling modules are uniformly arranged on the surface of the plate 30.

より高い冷却効果が得らルる。A higher cooling effect can be obtained.

〔発明の効果〕〔Effect of the invention〕

上述したような氷の接NVcよる9エバのプレートへの
固着は久のような効果が認められた01)氷の付着によ
る貼付が容易である。
The adhesion of 9EVA to the plate by ice contact NVc as described above had a similar effect. 01) It is easy to adhere by ice adhesion.

乃レベリングが容易である。No leveling is easy.

3)作業時間が短縮さ几るO へ遮ぷ1鎮め1ス覧多!洋禮苧島ム− 5)作業環境が安全である。3) Work time is reduced 1 calm down 1 su list! Western Reijima Mu- 5) The working environment is safe.

6)熱風加熱等により剥離が容易である。6) Easy to peel off by heating with hot air, etc.

つ洗浄過程が不要である。No cleaning process is required.

8)人手がかからない。8) No labor required.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a) a (b)は本発明の一実施例としての
氷の接着によるウェハのプレートへの固定方法に関する
模式図である。 1・・・ウェハ、2・・・水、3・・・プレート、4・
・・冷却モジュール、5・・・氷。 出願人復代理人 弁理士 鈴 江 武 彊(a) 0−25C 第 (b) 一10°0 1 図
FIGS. 1(a) and 1(b) are schematic diagrams relating to a method of fixing a wafer to a plate by adhering ice as an embodiment of the present invention. 1... Wafer, 2... Water, 3... Plate, 4...
...Cooling module, 5...Ice. Applicant Sub-Agent Patent Attorney Takeshi Suzue (a) 0-25C No. (b) 110°0 1 Figure

Claims (1)

【特許請求の範囲】[Claims] 半導体製造工程におけるウェハ研磨のため同ウェハをプ
レートに固定する方法において、上記ウェハとプレート
との間に水膜を形成させた後、冷却して、上記ウェハー
プレート間の水を凝固させ、ウェハとプレートを固着す
ることを特徴とする半導体製造工程におけるウェハの固
定方法。
In a method of fixing a wafer to a plate for wafer polishing in a semiconductor manufacturing process, a water film is formed between the wafer and the plate, and then the water between the wafer plates is solidified by cooling. A method for fixing a wafer in a semiconductor manufacturing process, characterized by fixing a plate.
JP60221343A 1985-10-04 1985-10-04 Fixing method for wafer in semi-conductor manufacturing process Pending JPS6279956A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60221343A JPS6279956A (en) 1985-10-04 1985-10-04 Fixing method for wafer in semi-conductor manufacturing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60221343A JPS6279956A (en) 1985-10-04 1985-10-04 Fixing method for wafer in semi-conductor manufacturing process

Publications (1)

Publication Number Publication Date
JPS6279956A true JPS6279956A (en) 1987-04-13

Family

ID=16765314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60221343A Pending JPS6279956A (en) 1985-10-04 1985-10-04 Fixing method for wafer in semi-conductor manufacturing process

Country Status (1)

Country Link
JP (1) JPS6279956A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5877240A (en) * 1997-09-26 1999-03-02 Owens Corning Fiberglas Technology, Inc. Sizing composition for glass fibers for reinforcement of engineered thermoplastic materials

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5877240A (en) * 1997-09-26 1999-03-02 Owens Corning Fiberglas Technology, Inc. Sizing composition for glass fibers for reinforcement of engineered thermoplastic materials
US6005026A (en) * 1997-09-26 1999-12-21 N.V.Owens-Corning S.A. Sizing composition for glass fibers for reinforcement of engineered thermoplastic materials

Similar Documents

Publication Publication Date Title
JP2020518133A5 (en)
JP2000150905A5 (en)
Kajari-Schröder et al. Lift-off of free-standing layers in the kerfless porous silicon process
US2984897A (en) Fabrication of semiconductor devices
JP2004119718A (en) Method of manufacturing thin semiconductor chip
JPS6279956A (en) Fixing method for wafer in semi-conductor manufacturing process
CN105729251A (en) Ferroelectric material surface processing method based on additional symmetric electric field
JPS61158145A (en) Processing method for semiconductor substrate
US3247473A (en) Cold diffusion bond between acoustic delay line and back electrode or acoustic absorber
JP2010040681A (en) Chip storage tray
JP5300378B2 (en) Substrate manufacturing method and solar cell element
JPS62252945A (en) Attachment and detachment of temporaty fixing means of material to be machined
JPS61180442A (en) Manufacture of semiconductor device
JP2003229588A (en) Method of manufacturing thin film semiconductor and method of manufacturing solar battery
JP7233815B2 (en) Dummy wafer and dummy wafer manufacturing method
JPH0444335A (en) Manufacture of semiconductor device
JPS59171137A (en) Pellet removing method
JPS63221634A (en) Fixing method for semiconductor pellet
JPH06124933A (en) Removement of fine grains attached to surface of solid
RU97100010A (en) METHOD FOR PRODUCING HIGH-TEMPERATURE SUPERCONDUCTIVE JOSEPHSON Junction
JPH0193126A (en) Process of releasing semiconductor wafer from plate
JPS63256327A (en) Method of holding workpiece
JPH05299362A (en) Manufacture of wafer for semiconductor element and semiconductor element itself
JPH02160469A (en) Manufacture of semiconductor wafer of iii-v group compound
JPS63276240A (en) Manufacture of semiconductor device