JPS6279956A - Fixing method for wafer in semi-conductor manufacturing process - Google Patents
Fixing method for wafer in semi-conductor manufacturing processInfo
- Publication number
- JPS6279956A JPS6279956A JP60221343A JP22134385A JPS6279956A JP S6279956 A JPS6279956 A JP S6279956A JP 60221343 A JP60221343 A JP 60221343A JP 22134385 A JP22134385 A JP 22134385A JP S6279956 A JPS6279956 A JP S6279956A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- plate
- water
- adhesion
- ice
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分e〕
本発明は半導体製造工程のウェハ研磨時におけるウェハ
の固定方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application e] The present invention relates to a method for fixing a wafer during wafer polishing in a semiconductor manufacturing process.
半導体製造工程のウェハ研磨時に於けるウェハの固定に
は、WAX (ワックス)あるいは有機系接着剤(エポ
キシ糸等)音用いて下地プレートに付着させる方法が従
来より行なわれていたO
ウェハの直径は現!5インチが玉流であり。The conventional method of fixing the wafer during wafer polishing in the semiconductor manufacturing process was to attach wax or organic adhesive (epoxy thread, etc.) to the base plate using sound. Now! 5 inches is the best size.
近年、6インチの大口径のものが出現しつつある。その
厚さは数μ〜数n程度であり、そのため、接着剤を剥離
する際には薄膜のため破損する虞れがある。In recent years, large-diameter devices of 6 inches have been appearing. The thickness thereof is approximately several μ to several nanometers, and therefore, when the adhesive is peeled off, there is a risk of damage due to the thin film.
従来のWAXあるいは接着剤によるウェハの固定には貼
付けに手間がかかる。即ち、WAX。Conventional methods of fixing wafers using wax or adhesives require time and effort. That is, WAX.
接着剤によるウェハのレベル化の友めの調製に注意を拡
い、長時間の作業時間を要し、また。The preparation of wafer leveling with adhesive requires a lot of attention, and also requires a long working time.
接着剤等では研磨修了後の剥離に溶剤の使用が不可欠で
、これらの接着剤、WA、l(、溶剤等のコストに相当
慮費す。ま皮接N則の剥離には長時間の手間を要し、そ
のp、*磯溶剤を一用いるため1作業環境の改侵等を特
徴とする特に剥離後、ウニ八表面上に不純物として存在
するWAXあるいは接着剤の痕跡を除去して洗浄する際
にも長時間の手間を要しamめて#雑なるものである。For adhesives, etc., it is essential to use a solvent to remove them after polishing is completed, and the cost of these adhesives, WA, l(, solvent, etc.) must be considered.Removal using the N rule of skin contact requires a long time and effort. 1. Since the sea urchin solvent is used, 1. It is characterized by tampering with the working environment. In particular, after peeling, traces of wax or adhesive present as impurities on the surface of the sea urchin are removed and cleaned. In some cases, it requires a lot of time and effort and is very tedious.
このように、WAXお接着剤などによるウェハの固定上
の問題点の解決には、ウェハの貼付は手間の減少、接着
したものの剥離過程の省力化、洗浄時間の短縮化等が必
要である。As described above, in order to solve the problems associated with fixing wafers using wax adhesives and the like, it is necessary to reduce the labor involved in attaching wafers, to save labor in the process of peeling off the adhesive, and to shorten cleaning time.
〔間4点を解決するための手段〕
上述し九間呟点を解決するtめに本発明に於いては、W
んXあるいは接着剤に代って氷による接着方法を実現し
た。即ち、プレート上に水を付着させ、その上にクエへ
を固定した後、プレートi氷点下の温度まで冷却させて
水を凍らせ、ウェハとプレー)t−接着させる。その後
。[Means for solving the four points in between] In order to solve the above-mentioned four points, in the present invention, W.
We realized an adhesive method using ice instead of adhesive. That is, after water is deposited on the plate and the wafer is fixed thereon, the plate is cooled to a temperature below freezing to freeze the water and bonded to the wafer. after that.
ウェハのIリックングエat−終了して、熱JgLm熱
等により氷を融解させてウエノSt−プレートから剥離
させる。After finishing the licking of the wafer, the ice is melted by heat or the like and peeled off from the Ueno plate.
上記氷の接着による接着力は、−10℃では10にり/
dからSOKノ/dにわたり、WAXによる接着力(数
?/cI/1) 、あるいは接層剤による接着力(10
〜300す/d)の匝と比較して/ IJッシング作業
上のウェハ固定の九めの保持力には十分である。氷の接
着力は、−10付近で最大(直を示す几め、プレートお
よびウェハ接着面の温度を一10℃程度まで降下させる
必要がある。また熱風等による加熱によって氷を融解さ
せてウェハをプレートから剥離させる(80 catl
& )およびプレートとウェハの加温(Cu 0.9
call& 、 Sj 1.8cal/ y)CDf
cめの熟慮が必要である。尚、Iv却によるウェハの歪
に関しては、ウェハの材料であるシリコンの線膨張係数
が、メタルと比較して1桁小さいので歪は小さく1間d
はない。The adhesion force due to the above ice adhesion is 10/1 at -10°C.
From d to SOK/d, the adhesive force by WAX (number?/cI/1) or the adhesive force by adhesive (10
~300 m/d) is sufficient for holding the wafer in place during IJ shing operations. The adhesion force of ice is at its maximum at around -10°C, so it is necessary to lower the temperature of the plate and wafer bonding surface to about -10°C.Also, the ice can be melted by heating with hot air, etc., and the wafer can be attached. Peel from the plate (80 catl
& ) and plate and wafer heating (Cu 0.9
call & , Sj 1.8cal/y)CDf
It is necessary to give careful consideration to c. Regarding distortion of the wafer due to IV heating, the coefficient of linear expansion of silicon, which is the material of the wafer, is one order of magnitude smaller than that of metal, so the distortion is small and only 1 d.
There isn't.
半4#本ウェハを研磨する目的で氷の接層技術にエリウ
ェハ七プレートに固定する方法を嘉1図+8) 、 (
blに示す。For the purpose of polishing a semi-4# wafer, the method of fixing the wafer to the seventh plate using the ice layer technique is shown in Figure 1 + 8), (
Shown in bl.
まずプレート30表口上に清浄な水2を付着させ、次に
、その上にウェハ1會固定する。水2はプレート3とク
エへ1の両表面を濡らし。First, clean water 2 is applied to the front surface of the plate 30, and then a wafer is fixed thereon. Water 2 wets both surfaces of plate 3 and cube 1.
ウェハ1とプレート3間に均一な水膜が形底される(第
1図(a))。A uniform water film is formed between the wafer 1 and the plate 3 (FIG. 1(a)).
次に、プレート3を冷却して水2t−凝固させ。Next, the plate 3 is cooled to solidify 2t of water.
氷5を形取させる。この温度1に一10℃に保つ。Have ice 5 cut into shape. Maintain this temperature at 1-10°C.
氷5はウェハ1およびプレート3を固着させる。Ice 5 sticks wafer 1 and plate 3 together.
そして冷却モジエール4VCよる冷却を続けながらウェ
ハ1の研磨を行なう(嘉x[Vfbl)。Then, the wafer 1 is polished while continuing cooling by the cooling module 4VC (Vfbl).
研磨終了後、熱風等の加熱により氷5を融解させて、ウ
ェハ11cプレート3から剥離させる。After polishing, the ice 5 is melted by heating with hot air or the like, and the wafer 11c is peeled off from the plate 3.
尚、上記実施列では冷却モジュール4t−棒状としてい
るが、プレート30面部に均一に冷却モジエールを配設
した構造とすることにエリ。In the above embodiment, the cooling module 4t is rod-shaped, but it is preferable to have a structure in which the cooling modules are uniformly arranged on the surface of the plate 30.
より高い冷却効果が得らルる。A higher cooling effect can be obtained.
上述したような氷の接NVcよる9エバのプレートへの
固着は久のような効果が認められた01)氷の付着によ
る貼付が容易である。The adhesion of 9EVA to the plate by ice contact NVc as described above had a similar effect. 01) It is easy to adhere by ice adhesion.
乃レベリングが容易である。No leveling is easy.
3)作業時間が短縮さ几るO へ遮ぷ1鎮め1ス覧多!洋禮苧島ム− 5)作業環境が安全である。3) Work time is reduced 1 calm down 1 su list! Western Reijima Mu- 5) The working environment is safe.
6)熱風加熱等により剥離が容易である。6) Easy to peel off by heating with hot air, etc.
つ洗浄過程が不要である。No cleaning process is required.
8)人手がかからない。8) No labor required.
第1図(a) a (b)は本発明の一実施例としての
氷の接着によるウェハのプレートへの固定方法に関する
模式図である。
1・・・ウェハ、2・・・水、3・・・プレート、4・
・・冷却モジュール、5・・・氷。
出願人復代理人 弁理士 鈴 江 武 彊(a)
0−25C
第
(b)
一10°0
1 図FIGS. 1(a) and 1(b) are schematic diagrams relating to a method of fixing a wafer to a plate by adhering ice as an embodiment of the present invention. 1... Wafer, 2... Water, 3... Plate, 4...
...Cooling module, 5...Ice. Applicant Sub-Agent Patent Attorney Takeshi Suzue (a) 0-25C No. (b) 110°0 1 Figure
Claims (1)
レートに固定する方法において、上記ウェハとプレート
との間に水膜を形成させた後、冷却して、上記ウェハー
プレート間の水を凝固させ、ウェハとプレートを固着す
ることを特徴とする半導体製造工程におけるウェハの固
定方法。In a method of fixing a wafer to a plate for wafer polishing in a semiconductor manufacturing process, a water film is formed between the wafer and the plate, and then the water between the wafer plates is solidified by cooling. A method for fixing a wafer in a semiconductor manufacturing process, characterized by fixing a plate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60221343A JPS6279956A (en) | 1985-10-04 | 1985-10-04 | Fixing method for wafer in semi-conductor manufacturing process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60221343A JPS6279956A (en) | 1985-10-04 | 1985-10-04 | Fixing method for wafer in semi-conductor manufacturing process |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6279956A true JPS6279956A (en) | 1987-04-13 |
Family
ID=16765314
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60221343A Pending JPS6279956A (en) | 1985-10-04 | 1985-10-04 | Fixing method for wafer in semi-conductor manufacturing process |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6279956A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5877240A (en) * | 1997-09-26 | 1999-03-02 | Owens Corning Fiberglas Technology, Inc. | Sizing composition for glass fibers for reinforcement of engineered thermoplastic materials |
-
1985
- 1985-10-04 JP JP60221343A patent/JPS6279956A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5877240A (en) * | 1997-09-26 | 1999-03-02 | Owens Corning Fiberglas Technology, Inc. | Sizing composition for glass fibers for reinforcement of engineered thermoplastic materials |
US6005026A (en) * | 1997-09-26 | 1999-12-21 | N.V.Owens-Corning S.A. | Sizing composition for glass fibers for reinforcement of engineered thermoplastic materials |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2020518133A5 (en) | ||
JP2000150905A5 (en) | ||
Kajari-Schröder et al. | Lift-off of free-standing layers in the kerfless porous silicon process | |
US2984897A (en) | Fabrication of semiconductor devices | |
JP2004119718A (en) | Method of manufacturing thin semiconductor chip | |
JPS6279956A (en) | Fixing method for wafer in semi-conductor manufacturing process | |
CN105729251A (en) | Ferroelectric material surface processing method based on additional symmetric electric field | |
JPS61158145A (en) | Processing method for semiconductor substrate | |
US3247473A (en) | Cold diffusion bond between acoustic delay line and back electrode or acoustic absorber | |
JP2010040681A (en) | Chip storage tray | |
JP5300378B2 (en) | Substrate manufacturing method and solar cell element | |
JPS62252945A (en) | Attachment and detachment of temporaty fixing means of material to be machined | |
JPS61180442A (en) | Manufacture of semiconductor device | |
JP2003229588A (en) | Method of manufacturing thin film semiconductor and method of manufacturing solar battery | |
JP7233815B2 (en) | Dummy wafer and dummy wafer manufacturing method | |
JPH0444335A (en) | Manufacture of semiconductor device | |
JPS59171137A (en) | Pellet removing method | |
JPS63221634A (en) | Fixing method for semiconductor pellet | |
JPH06124933A (en) | Removement of fine grains attached to surface of solid | |
RU97100010A (en) | METHOD FOR PRODUCING HIGH-TEMPERATURE SUPERCONDUCTIVE JOSEPHSON Junction | |
JPH0193126A (en) | Process of releasing semiconductor wafer from plate | |
JPS63256327A (en) | Method of holding workpiece | |
JPH05299362A (en) | Manufacture of wafer for semiconductor element and semiconductor element itself | |
JPH02160469A (en) | Manufacture of semiconductor wafer of iii-v group compound | |
JPS63276240A (en) | Manufacture of semiconductor device |