JPS6279473A - Light receiving member - Google Patents

Abstract

PURPOSE:To obtain a stable light receiving body of high quality by laminating two a-Si layers contg. O, C or N on a support having a large number of hemispherical dents and by distributing Ge or Sn in the lower layer. CONSTITUTION:Rigid spheres are naturally dropped on the surface of a metallic support 101 to make the surface uneven by the traces of the spheres having >=0.035 ratio of D/R (D is <500mum width and R is curvature). Two a-Si layers 102', 102'' contg. O, C or N are laminated on the support 101 and Ge or Sn is distributed only in the layer 102' so that the concn. is made higher on the support side. When the concn. of Ge or Sn in the layer 102' is made extremely high, light having longer wavelengths and passing through the layer 102'' can perfectly be absorbed in the layer 102'. When the concn. is regulated to 1X10<2>-5X10<3>atom ppm and the thickness (t) of the layer 102' is selected so as to satisfy <=0.4 ratio of t/T (T is the total thickness of the light receiving layers), a layer inhibiting the implantation of electric charges is formed. A barrier layer of an insulator may be formed in place of the inhibiting layer or both the layers may be formed. By this structure, a light receiving body generating no interference fringes and giving stably and repeatedly high quality images is obtd.

Description

[Detailed description of the invention] [Technical field to which the invention pertains] The present invention relates to the use of light (here, light in a broad sense, such as ultraviolet rays, visible light,
It relates to a light-receiving member that is sensitive to electromagnetic waves such as infrared rays, X-rays, gamma rays, etc.

More specifically, the present invention relates to a light receiving member suitable for using coherent light such as laser light.

[Description of prior art]

As a method for recording digital image information as an image, an electrostatic latent image is formed by optically scanning a light-receiving member with a laser beam modulated according to the digital image information, and then the latent image is developed. Furthermore, methods of recording images that perform processes such as transfer and fixing as necessary are known. Among them, in image forming methods using electrophotography, the laser used is a small and inexpensive He-Ne laser or a semiconductor laser ( It is common practice to record an image using a light source (usually having an emission wavelength of 650 to 820 nm).

By the way, as a light-receiving member for electrophotography suitable when using a semiconductor laser, in addition to being superior in consistency of its photosensitivity region compared to other types of light-receiving members,
Amorphous materials containing silicon atoms (hereinafter referred to as A light-receiving member made of ra-8iJ (abbreviated as ra-8iJ) has been attracting attention.

However, regarding the light receiving member.

When the photoreceptive layer is a single-layer A-8T layer, it maintains its high photosensitivity while maintaining the 1012 required for electrophotography.
In order to ensure a dark resistance of 0 m or more, it is necessary to have hydrogen atoms, rogen atoms, or boron atoms in addition to these atoms in a specific amount range in a controlled manner in the layer. Therefore, there are considerable restrictions on the design tolerances of light-receiving members, such as the need to strictly control various conditions during layer formation. Proposals have been made to improve the problem by making it possible to effectively utilize the high light sensitivity even if the dark resistance is low to some extent.
As seen in Japanese Patent Application Laid-open No. 121743, Japanese Patent Application Laid-Open No. 57-4053, and Japanese Patent Application Laid-Open No. 57-4172, the photoreceptive layer is formed into a layered structure of two or more layers having different conductive properties. or by forming a depletion layer in the
No. 7-52178, No. 52179, No. 52180,
As seen in each publication of No. 58159, No. 58160, and No. 58161, a multilayer structure is provided in which a barrier layer is provided between the support and the photoreceptive layer or/and on the upper surface of the photoreceptive layer. A light-receiving member with apparently increased dark resistance has been proposed.

However, in such a light-receiving member in which the light-receiving layer has a multilayer structure, the thickness of each layer varies, and when performing laser recording using this material, since the laser light is coherent monochromatic light, the light-receiving layer The free surface on the laser beam irradiation side, each layer constituting the photoreceptive layer, and the layer interface between the support and the photoreceptor layer
From now on, the term "free surface" and "layer interface" will be used together.
It is called "interface". ) The reflected light beams that are reflected from each other often cause interference.

This interference phenomenon causes the so-called,
This appears as an interference fringe pattern and causes image defects. Particularly in the case of forming a half-tone image with high gradation, a blurred image with extremely poor distinguishability is produced.

Another important point is that as the wavelength range of the semiconductor laser light used reaches a certain wavelength, the absorption of the laser light in the photoreceptive layer decreases, so there is a problem that the above-mentioned interference phenomenon becomes more noticeable. .

That is, for example, in a device with a structure of two or more layers (multilayer), interference effects occur in each of those layers, and each interference acts synergistically to create an interference fringe pattern. This directly affects the transfer member, and there is a problem that interference fringes corresponding to the interference fringe pattern are transferred and fixed onto the member and appear in a visible image, resulting in a defective image.

As a measure to solve these problems, (a) the surface of the support is diamond-cut to provide unevenness of ±500A to ±10,000 to form a light scattering surface (for example,
8-162975), (b) a method of providing a light absorbing layer by subjecting the surface of the aluminum support to black alumite treatment, or dispersing carbon, coloring pigments, or dyes in a resin (for example, Japanese Patent Application Laid-Open No. 8-162975); 57-165845), (c) applying a light-scattering anti-reflection layer to the surface of the support by subjecting the surface of the aluminum support to a satin-like alumite treatment or by sandblasting to provide fine roughness in the form of grains. Method (for example, see Japanese Unexamined Patent Publication No. 16554/1983)
etc. have been proposed.

Although these proposed methods provide some results, they are not sufficient to completely eliminate the interference fringe pattern that appears on images.

That is, in method (a), a large number of irregularities of a specific t are provided on the surface of the support, and although this prevents the appearance of interference fringes due to the light scattering effect to some extent,
As for light scattering, the specularly reflected light component still remains, so in addition to the interference fringe pattern caused by the specularly reflected light remaining, the irradiation spot spreads due to the light scattering effect on the support surface, causing substantial This results in a significant decrease in resolution.

Regarding method (b), complete absorption is not possible with black alumite treatment, and the reflected light on the support surface remains. In addition, when providing a colored pigment dispersed resin layer,
When forming the a-8t layer, a degassing phenomenon occurs in the resin layer,
The layer quality of the formed photoreceptive layer is significantly deteriorated, the resin layer is damaged by the plasma during the formation of the A-8T layer, reducing its original absorption function, and the subsequent A-8T layer is damaged due to deterioration of the surface condition. There are problems such as having an adverse effect on the formation of the -8t layer.

Regarding method (C), for example, if we look at the incident light, a part of it is reflected on the surface of the photoreceptive layer and becomes reflected light,
The remainder enters the inside of the light-receiving layer and becomes transmitted light. At the surface of the support, part of the transmitted light is scattered and becomes diffused light, the rest is specularly reflected and becomes reflected light, and part of it becomes emitted light and goes outside. However, since the emitted light is a component that interferes with the reflected light and remains in any case, the diagonal stripe pattern still does not disappear completely.

By the way, in order to prevent interference in this case, some attempts have been made to increase the diffusivity of the surface of the support so that multiple reflections do not occur within the photoreceptive layer, but such attempts instead cause light to be absorbed within the photoreceptive layer. is diffused and causes halation, which ultimately results in a decrease in resolution.

In particular, in a light-receiving member with a multilayer structure, even if the surface of the support is irregularly roughened, the light reflected on the surface of the first layer,
The light reflected by the layer and the light specularly reflected by the surface of the support interfere with each other, producing an interference fringe pattern according to the thickness of each layer of the light-receiving member. Therefore, in a light-receiving member with a multilayer structure,
It is impossible to completely prevent interference fringes by irregularly roughening the support surface.

Furthermore, when the surface of the support is irregularly roughened by methods such as sandblasting, the degree of roughness varies greatly between lots, and even within the same lot, the degree of roughness is uneven, making it difficult to manufacture. There are management issues. In addition, relatively large protrusions are often formed randomly, and such large protrusions cause local breakdown of the photoreceptive layer.

Furthermore, if the surface of the support is simply roughened regularly,
Since the light-receiving layer is deposited along the uneven shape of the surface of the support, the inclined plane of the unevenness of the support surface and the inclined plane of the unevenness of the light-receiving layer become parallel, and the incident light is not bright at that part. Moreover, since the thickness of the photoreceptive layer is non-uniform throughout the photoreceptive layer, a striped pattern of light and dark appears. Therefore, simply by regularly roughening the surface of the support, it is not possible to completely prevent the occurrence of interference fringes.

Furthermore, even when a multilayered light-receiving layer is deposited on a support whose surface has been roughened to a standard 1", the difference between specularly reflected light on the surface of the support and light reflected on the surface of the light-receiving layer is In addition to interference, interference due to reflected light at the interface between each layer is added, so the degree of interference fringe pattern development becomes more complicated than that of a light receiving member having a single layer structure.

[Purpose of the invention]

The object of the present invention is to eliminate the above-mentioned problems and to provide a light-receiving member having a light-receiving layer mainly composed of a-8i, which satisfies various demands.

That is, the main object of the present invention is to have electrical, optical, and photoconductive properties that are virtually always stable without depending on the usage environment, have excellent light fatigue resistance, and exhibit no deterioration phenomenon even after repeated use. To provide a light-receiving member having a light-receiving layer made of a-8i, which has excellent durability and temperature resistance, has no or almost no residual potential observed, and is easy to manage in production. It is in.

Another object of the present invention is to provide a light-receiving member having a light-receiving layer made of a-8i, which has high photosensitivity in the entire visible light range, has excellent matching properties with semiconductor lasers, and has a fast photoresponse. It is about providing.

Still another object of the present invention is to provide a light-receiving member having a light-receiving layer made of a-8i, which has high photosensitivity, high signal-to-noise ratio characteristics, and high electrical voltage resistance.

Another object of the present invention is to have excellent adhesion between a layer provided on a support and the support and between each layer of laminated layers,
A-
An object of the present invention is to provide a light-receiving member having a light-receiving layer made of 8i.

Still another object of the present invention is to be suitable for image formation using coherent monochromatic light, to be free of interference fringes and spots during reversal development even after repeated use over a long period of time, and to be free from image defects and image formation. A light-receiving member having a light-receiving layer made of A-8i is capable of obtaining high-quality images with no blur, high density, clear halftones, and high resolution. It is about providing.

[Structure of the invention]

The present inventors have obtained the above-mentioned knowledge as a result of intensive research in order to overcome the above-mentioned problems with conventional light-receiving members and achieve the above-mentioned objective, and have developed the present invention based on the above-mentioned knowledge. It was completed.

That is, the present invention provides a photoreceptive layer comprising a support (H) and a photoreceptive layer made of an amorphous material containing silicon atoms and at least one selected from oxygen atoms, carbon atoms, and nitrogen atoms. The light-receiving member is a multilayer structure in which the light-receiving layer has a layer containing at least one of germanium atoms or tin atoms, and a layer containing neither germanium atoms nor tin atoms, in order from the support side. ,
The present invention also relates to a light-receiving member in which the surface of the support has an uneven shape formed by a plurality of spherical trace depressions.

By the way, the findings obtained by the present inventors through extensive research are summarized as follows: In a light-receiving member having a plurality of layers on a support, irregularities formed by a plurality of spherical trace depressions are provided on the surface of the support. This eliminates the problem of interference fringes that appear during image formation.

This knowledge is based on facts obtained through various experiments conducted by the present inventors.

This will be explained below using drawings to facilitate understanding.

FIG. 1 is a schematic diagram showing the layer structure of the light-receiving member [00] according to the present invention. , ./A photoreceptive layer consisting of a layer 102' containing silicon atoms and at least one of germanium atoms or tin atoms, and a layer 102'' containing silicon atoms and neither germanium atoms nor tin atoms. 102 shows a light-receiving member with 102.

FIGS. 2 and 3 are diagrams for explaining how the problem of interference fringes is solved in the light-receiving member of the present invention.

FIG. 3 is an enlarged view of a part of a conventional light-receiving member in which a multilayer light-receiving layer is deposited on a support whose surface is regularly roughened. In the drawing, 301 indicates the first layer, 302 indicates the second layer, 303 indicates the free surface, and 304 indicates the interface between the first layer and the second layer. As shown in Fig. 3, when the surface of the support is simply roughened regularly by means such as cutting, the light-receiving layer is usually formed along the uneven shape of the surface of the support. The sloped surface of the unevenness on the body surface and the sloped surface of the unevenness on the photoreceptive layer are in a parallel relationship.

Due to this, for example, the photoreceptive layer is the first layer 301.
In a light-receiving member having a multilayer structure consisting of two layers, ie, a first layer and a second layer 302, the following problems regularly arise, for example. That is, since the interface 304 between the first layer and the second layer and the free surface 303 are in a parallel relationship, the reflected light R at the interface 304 and the reflected light R2 at the free surface
The direction coincides with that of the second layer, and interference fringes are generated depending on the layer thickness of the second layer.

FIG. 2 is an enlarged view of a part of FIG. 1, and as shown in FIG. 2, the light-receiving member of the present invention has an uneven shape formed by a plurality of minute spherical trace depressions on the surface of the support. Since the light-receiving layer thereon is deposited along the uneven shape, for example, the light-receiving layer overlaps the first layer 201 and second layer 202.
In the light-receiving member having a multilayer structure consisting of two layers, the interface 204 between the first layer 201 and the second layer 202 and the free surface 203 each follow the uneven shape of the surface of the support. It is formed into an uneven shape with spherical trace depressions. If the curvature of the spherical trace depression formed on the interface 204 is R1, and the curvature of the spherical trace depression formed on the free surface is Bird, then
Since 几 and R2 become 几, lol R2, the reflected light at the interface 204 and the reflected light at the free surface 203 have different reflection angles, that is, θl and θ2 in FIG. θ
1=IFθ2, the directions are different, and the stone shown in FIG. 2, &.

Since the wavelength shift, expressed as & + 4 Jh using the diagram on the right, is not constant but changes, shearing interference corresponding to the so-called Newton's ring phenomenon occurs, and the interference fringes are dispersed within the depression. By the way. As a result, the image appearing through such a light-receiving member is
Even if interference fringes were to appear microscopically, they would be invisible to the naked eye.

In other words, the use of a support having such a surface shape is for a light-receiving member having a multi-layered light-receiving layer formed thereon, and the light that has passed through the light-receiving layer is transmitted to the layer interface and the support. Reflection on the surface and their interference effectively prevent the formed image from having a striped pattern, leading to a light-receiving member capable of forming an excellent image.

By the way, the curvature R and width of the uneven shape due to the spherical trace depressions on the support surface of the light receiving member of the present invention efficiently achieve the effect of preventing the occurrence of interference fringes in the light receiving member of the present invention. This is an important factor. The present inventors have investigated the following points as a result of various experiments.

That is, when the curvature R and the width satisfy the following formula: 0.5 or more Newton rings due to shearing interference are present in each trace depression. Furthermore, if the following formula is satisfied, one or more Newton rings due to shearing interference will exist in each trace depression.

For this reason, in order to disperse the interference fringes that occur throughout the light receiving member into each trace depression and to prevent the occurrence of interference fringes in the light receiving member, it is necessary to
5, preferably 0.055 or more.

In addition, the width of the unevenness due to the trace depression is at most 500
It is desirable that the thickness be about μm, preferably 200 μm or less, more preferably ]0011 m or less.

The photoreceptive layer formed on the support having the specific surface shape as described above contains silicon atoms, at least one selected from oxygen atoms, carbon atoms, and nitrogen atoms, and preferably further hydrogen atoms or halogen atoms. Amorphous material containing at least one of atoms [hereinafter referred to as "a"
-Si (0, C, N) (H, X) J. ]
and the photoreceptive layer is a multilayer comprising, in order from the support side, a layer containing at least one of germanium atoms or tin atoms, and a layer containing neither germanium atoms nor tin atoms. It is a layer of composition. The photoreceptive layer may further contain a substance for controlling conductivity, if necessary. It is particularly preferable to have a charge injection blocking layer containing a substance that controls conductivity as one of the constituent layers, and/or a barrier layer as one of the constituent layers.

Regarding the preparation of the light-receiving layer of the light-receiving member of the present invention, in order to efficiently achieve the above-mentioned object of the present invention, it is necessary to accurately control the thickness at an optical level. Vacuum deposition methods such as a method, a sputtering method, an ion blating method, etc. are usually used, but in addition to these methods, a photo CVD method, a thermal CVD method, etc. can also be employed.

Hereinafter, the specific structure of the light receiving member of the present invention shown in FIG. 1 will be explained in detail.

FIG. 1 is a diagram schematically shown to explain the layer structure of the light-receiving member of the present invention, in which 100 is the light-receiving member, 101 is the support, 1.02 is the light-receiving layer, 1031d shows the free surface.

The support 101 in the light-receiving member of the present invention has irregularities on its surface that are finer than the resolution required for the light-receiving member, and the irregularities are formed by a plurality of spherical trace depressions.

Hereinafter, examples of the shape of the surface of the support and a preferable manufacturing method thereof will be explained in detail with reference to FIGS. 4 and 5, but the shape of the support in the light receiving member of the present invention and the manufacturing method thereof are limited by these. It's not a thing.

FIG. 4 schematically shows a typical example of the shape of the support surface in the light-receiving member of the present invention, partially enlarging a part of the uneven shape. In Figure 4, 401
is a support, 402 is a support surface, 403 is a rigid true sphere, 4
04 indicates a spherical trace depression.

Furthermore, FIG. 1 also shows one example of a preferred manufacturing method for obtaining the surface shape of the support. That is, by letting a rigid true sphere 403 naturally fall from a position at a predetermined height from the support surface 402 and colliding with the support surface 402, a spherical trace depression 104 is formed. Then, using a plurality of rigid true spheres 403 having approximately the same diameter R', from the same height h, simultaneously or sequentially,
By dropping, a plurality of spherical trace depressions 404 having the same curvature R and the same width are formed on the support surface 402.
can be formed.

FIG. 5 shows some typical examples of supports having an uneven shape formed by a plurality of spherical trace depressions on the surface as described above.

In the example shown in FIG.
, . . . are regularly dropped from approximately the same height to form a plurality of trace depressions 6 with approximately the same curvature and approximately the same width.
04. 604. . . . are formed densely so as to overlap each other to form a regularly uneven shape. In this case, the depressions 504.50 that overlap with each other
4. In order to form..., the spheres 503 are arranged so that the timing of their collision with the support surface 502 is shifted from each other.
03.503. It goes without saying that it is necessary to allow the... to fall naturally.

In addition, in the example shown in Fig. 5G), two types of spheres 503, 503', ... having different diameters are dropped from approximately the same height or different heights, and the surface of the support 501 is 502, a plurality of depressions 50 having two types of curvature and two types of width;
4. 504', . . . are formed densely so as to overlap each other, thereby forming irregularities with irregular heights on the surface.

Furthermore, in the example shown in FIG. 50 (a front view and a sectional view of the surface of the support), a plurality of spheres 503, 503, . A plurality of depressions 504, 504. which are irregularly dropped from the same height and have approximately the same curvature and a plurality of widths.・
... are made to overlap each other to form irregular irregularities.

As described above, by dropping a rigid true sphere onto the support surface, it is possible to form an uneven shape with spherical trace depressions, but in this case, the diameter of the rigid true sphere, the height at which it is dropped,
By appropriately selecting various conditions such as the hardness of the rigid true sphere and the surface of the support, or the amount of spheres to be dropped, a plurality of spherical trace depressions having the desired curvature and width can be created on the surface of the support.
It can be formed with a predetermined density.

That is, by selecting the above-mentioned conditions, the height of the unevenness and the pitch of the unevenness formed on the surface of the support can be freely adjusted according to the purpose, and the support having the desired unevenness on the surface can be adjusted. Obtainable.

In order to make the support of the light-receiving member have an uneven surface, a method has been proposed in which cutting is performed using a diamond cutting tool using a lathe, milling machine, etc., and although this is a reasonably effective method, This method requires the use of cutting oil, the removal of chips that are inevitably generated during cutting, and the removal of cutting oil that remains on the cut surface, resulting in complicated processing. However, in the present invention, since the uneven surface shape of the support is formed by spherical trace depressions as described above, the above-mentioned problems are completely eliminated, and the desired uneven surface shape can be obtained. supports can be produced efficiently and easily.

The support 101 used in the present invention may be electrically conductive or electrically insulating. Examples of the conductive support include NiCr, stainless steel, An,
Cr, Mo, Au, Nb, Ta.

Examples include metals such as V, Ti, Pt, and Pb, and alloys thereof.

Examples of the electrically insulating support include films or sheets of synthetic resins such as polyester, polyethylene, polycarbonate, cellulose, acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, and polyamide, glass, ceramic, and paper. It is preferable that at least one surface of these electrically insulating supports is conductively treated, and a light-receiving layer is provided on the conductively treated surface side.

For example, if it is glass, NiCr, AA
, Cr, Mo, Au, Ir, Nb, Ta,
V, Ti.

Pt, Pd, In2O3, SnO2, ITO(I
Conductivity can be imparted by providing a thin film made of nzO3+ Sn 02 ), etc., or if it is a synthetic resin film such as a polyester film, NiCr, AI3,
Ag, Pb, Zn, Ni, Au, Cr, Mo
, Ir, Nb% Ta, V, Te, Pt, etc., on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or by laminating the surface with the above metal. Provides conductivity. The shape of the support can be any shape such as a cylinder, a belt, a plate, etc., and the shape can be determined as appropriate depending on the purpose and desire. For example, if the light-receiving member 100 of FIG. 1 is used as an electrophotographic image forming member, it is preferable to use an endless belt or a cylindrical shape for continuous high-speed copying. The thickness of the support is determined as appropriate so that it can form the desired light-receiving member, but if readability is required as a light-receiving member, it should be within a range that allows the support to function adequately. can be made as thin as possible. However, from the viewpoint of manufacturing and handling of the support, mechanical strength, etc., the thickness is usually set to 10μ or more.

Next, when the light-receiving member of the present invention is used as a light-receiving member for electrophotography, an example of an apparatus for manufacturing the surface of the support will be described with reference to FIGS. 6(4) and 6). However, the present invention is not limited thereto.

As a support for electrophotography and light-receiving members, aluminum alloys are usually extruded to form boathole tubes or mandrel tubes, and the resulting drawn tubes are subjected to heat treatment and conditioning as necessary. A cylindrical (cylinder-shaped) substrate that has been subjected to a treatment such as quality is used, and a sixth (cylindrical) substrate is applied to the cylindrical substrate.
A.

ω) Using the manufacturing apparatus shown in the figure, an uneven shape is formed on the surface of the support. Examples of spheres used to form the above-mentioned uneven shape on the surface of the support include metals such as stainless steel, aluminum, steel, nickel, and brass;
Various rigid spheres such as ceramics and plastics can be used, and rigid spheres made of stainless steel and steel are particularly preferred for reasons such as durability and cost reduction.

The hardness of such a sphere may be higher or lower than that of the support, but if the sphere is to be used repeatedly, it is preferably higher than the hardness of the support.

6(A) and 6(B) are schematic cross-sectional views of the entire manufacturing apparatus, and 601 is an aluminum cylinder for making a support. It may be finished.

The cylinder 601 is supported by a rotating shaft 602, and is driven by an appropriate auxiliary means 603 such as a motor, so as to be rotatable about the shaft. The rotation speed is appropriately determined and controlled in consideration of the density of the spherical trace depressions to be formed, the amount of rigid spheres supplied, and the like.

604 is a dropping device for allowing the rigid true sphere 605 to fall naturally, and a ball feeder 606 for storing the rigid true sphere 605 and allowing it to fall. A vibrator 60 that vibrates so that the rigid true sphere 605 easily falls from the feeder 606
7. A collection tank 608 for collecting the rigid true spheres 605 that collide with the cylinder and fall, a ball feeding device 609 for transporting the rigid true spheres 605 collected in the recovery tank 608 through a pipe to the feeder 606, and a feeding device 609 A cleaning device 610 and a cleaning device 61 for cleaning the rigid true sphere with liquid during the process.
It is comprised of a liquid reservoir 611 for supplying cleaning liquid (solvent, etc.) to the 0 through a nozzle or the like, a recovery tank 612 for recovering the liquid used for cleaning, and the like.

The amount of rigid true spheres that naturally fall from the feeder 606 is adjusted as appropriate depending on the degree of opening and closing of the drop port 613, the degree of shaking by the vibrator 607, and the like.

Light-receiving layer In the light-receiving member of the present invention, the above-mentioned support K 101
It has a photoreceptive layer 102 made of a-3i (0,C,N) (H,X) on top, and the photoreceptor layer 102 has germanium atoms (Ge) or a layer containing at least one of tin atoms (Sn) [i.e., a-3i (Ge, 5n) (0, C,
N) A layer composed of (H, The photoreceptive layer 102 has a multilayer structure in which layers) 102'' are laminated in order.The photoreceptive layer 102 can further contain a substance for controlling conductivity, if necessary.

Specific examples of the halogen atom (X) contained in the light-receiving layer include fluorine, chlorine, bromine, and iodine.
Particularly preferred are fluorine and chlorine. Then, hydrogen atoms (
The amount of hydrogen atoms (H) or the amount of hydrogen atoms (X), or the sum of the amounts of hydrogen atoms and hydrogen atoms (H+X) is usually 1 to
40 atomic%, preferably 5-30 atomic%
It is desirable to put it in Section C.

In addition, in the light-receiving member of the present invention, the layer thickness of the light-receiving layer is one of the important factors for efficiently achieving the object of the present invention.
In order to give the light-receiving member the desired characteristics, it is necessary to pay sufficient attention when designing the light-receiving member.
0μ, more preferably 2 to 50μ.

Incidentally, the purpose of containing germanium atoms and/or tin atoms in the light-receiving layer of the light-receiving member of the present invention is mainly to improve the absorption spectrum characteristics of the light-receiving member on the long wavelength side.

That is, by containing germanium atoms and/or tin atoms in the light-receiving layer, the light-receiving member of the present invention exhibits various excellent properties, especially in the visible light region. It has excellent photosensitivity and fast photoresponsiveness to light in the entire range of wavelengths from relatively short wavelengths to relatively short wavelengths. This is particularly true when a semiconductor laser is used as a light beam.

In the light-receiving layer of the light-receiving member of the present invention, germanium atoms and/or tin atoms are contained in a uniformly distributed state in the layer 102' in contact with the support 101;
Alternatively, it is contained in a non-uniformly distributed state.

(Here, the uniform distribution state refers to germanium atoms or/
This means that the distribution concentration of tin atoms is uniform in the plane direction parallel to the support surface of the layer 102', and is also uniform in the layer thickness direction of the layer 102', and a non-uniform distribution state is defined as , germanium atoms and/or tin atoms are uniform in the plane direction parallel to the support surface of the layer 102', but are non-uniform in the layer thickness direction of the layer 102'. ) In the layer 102' of the present invention, it is particularly desirable that germanium atoms and/or tin atoms be contained in a state where they are more distributed on the support side than on the layer 102'' side. By making the distribution concentration of germanium atoms and/or tin atoms extremely large at the end portion on the support side, when a long wavelength light source such as a semiconductor laser is used, almost no absorption occurs in the layer 102''. The longer wavelength light that cannot be absorbed can be substantially completely absorbed in the layer 102', and interference due to reflected light from the surface of the support can be prevented.

Furthermore, in the light-receiving member of the present invention, since the amorphous materials constituting the layer 102' and the layer 102'' each have a common constituent element of silicon atoms, chemical stability is maintained at the laminated interface. are sufficiently secured.

Hereinafter, germanium atoms contained in the layer 102' and/or
Or some typical examples of the distribution state of tin atoms in the layer thickness direction of the layer 102', taking germanium atoms as an example,
This will be explained with reference to FIGS.

7 to 15, the horizontal axis represents the distribution concentration C of germanium atoms, and the vertical axis represents the layer thickness of the layer 102', t
, is the position of the end of the layer 102' on the support side, t? indicates the position of the end face of the layer 102'' on the side opposite to the support side. That is, the layer 102' containing germanium atoms is formed as a layer toward the t, side rather than the t, side.

In addition, in each figure, the layer thickness and concentration are shown in an extreme form because if the values are shown as they are, the differences between each figure will not be clear.These figures are only for easy understanding. This is a schematic diagram for explanation.

FIG. 7 shows a first typical example of the distribution state of germanium atoms contained in the layer 102' in the layer thickness direction.

In the example shown in FIG. 7, the distribution concentration of germanium atoms is from the interface position t, where the layer 10' is in contact with the support surface where the layer 102' containing germanium atoms is formed, to the position t. Germanium atoms are contained in the layer 102' while C takes a constant value of concentration C1, and the position t gradually and continuously decreases until the concentration C2 reaches the interface position t.

At the interface position t, the distribution concentration of germanium atoms C
is essentially zero.

(Here, "substantially zero" means that the amount is less than the detection limit.) In the example shown in FIG. A distribution state is formed in which the concentration gradually and continuously decreases from C3 to reach C4 at the position.

In the case of FIG. 9, position t, position t? Up to this point, the distribution concentration C of germanium atoms was kept at a constant concentration C8, and gradually and continuously decreased between position (and position t), and at position t, the distribution concentration C became substantially zero. It is said that

In the case of FIG. 10, the distribution concentration C of germanium atoms gradually decreases continuously starting from the concentration C6 until reaching the position t, and decreases rapidly and continuously from the position t3. is substantially zero at position t.

In the example shown in FIG. 11, the distribution concentration C of germanium atoms is a constant value of concentration C7 between position t and position t4, and the distribution concentration C is zero at position t. be done. Position t4 and position t? , the distribution concentration C is a linear function from the position t4 to the multiple positions t? has been reduced to.

In the example shown in FIG. 12, the distribution concentration C is at the position t
, the density C8 takes a constant value until the position t.
, yo multi-position t? The distribution state is such that the concentration decreases linearly from the concentration C0 to the concentration CIO.

In the example shown in FIG. 13, the distribution concentration C of germanium atoms is at the concentration C11 up to the position t, and even more positions t.
It decreases in a linear fashion to zero.

In FIG. 14, the distribution concentration C of germanium atoms decreases linearly from the concentration CIZ to the concentration CI3 up to the position t, and then to the many positions t, and then from the position t6 to the position t? An example is shown in which the concentration CI3 is set to a constant value between .

In the example shown in FIG. 15, the distribution concentration C of germanium atoms is at the concentration CI4 at the position t, and at first slowly decreases from this concentration CI4 until reaching the position 17, and near the position t7. , is rapidly decreased to a concentration C15 at position t7.

Between position t7 and position t8, the decrease is rapid at first, and then slowly and gradually decreased until position t8.
So, between the positions t and t, the concentration CI6 is,
In the gradually decreased position, a concentration CI7 is reached.

Between position t, and position [, the concentration C1? It is reduced in accordance with a curve shaped as shown in FIG. 15 so as to become more substantially zero.

As described above with reference to FIGS. 7 to 15, some typical examples of the distribution state of germanium atoms and/or tin atoms contained in the layer 102' in the layer thickness direction, the present invention The light-receiving member has a portion with a high distribution concentration C of germanium atoms and/or tin atoms on the support side, and on the interface t side, the distribution concentration C is slightly lower than that on the support side. It is desirable that the constituent layer 102' be provided with a distribution of germanium atoms and/or tin atoms.

That is, the layer 102' constituting the light receiving member in the present invention
7. As described above, it is desirable to have a localized region containing germanium atoms and/or tin atoms at a relatively high concentration on the support side.

In the light-receiving member of the present invention, the localized regions can be explained using the symbols shown in FIGS. 7 to 15, such as the interface position t,
It is desirable that it be provided within 953 degrees.

The localized region may be the entire layer region up to 5 μm in thickness, or may be a part of the layer region.

Whether the localized region is a part or all of the layer 102' is determined as appropriate depending on the characteristics required of the photoreceptive layer to be formed.

The localized region contains germanium atoms or/
and the distribution state of tin atoms in the layer thickness direction, the maximum distribution concentration of germanium atoms and/or tin atoms (:: ma
If x is a silicon atom, preferably IQQQ at
omic ppm or more, preferably 5000 ato
mic ppm or more, optimally high IXI (7'atomi
It is desirable that the layer be formed in such a way that a distribution state of cppm or more can be achieved.

That is, in the light-receiving member of the present invention, the layer 102' containing germanium atoms and/or tin atoms has a Ct of 5 μm or less in layer thickness from the support side.

It is preferable to form the layer so that the maximum value of the distribution concentration (:max) exists in the layer region of 5 μm to 5 μm.

In the light-receiving member (C) of the present invention, the content of germanium atoms and/or tin atoms contained in the layer 102' must be appropriately determined as desired so as to efficiently achieve the object of the present invention. shi, usually 1 to 6 x 10510
5ato ppm, preferably 10 to 3
X 10' atomic pI)m, preferably I X 102~2 X IQ' atomic p
Let it be pm.

The purpose of containing at least one kind selected from oxygen atoms, carbon atoms, and nitrogen atoms in the light-receiving layer of the light-receiving member of the present invention is mainly to increase the photosensitivity and dark resistance of the light-receiving member; The aim is to improve the adhesion between the support and the light-receiving layer.

In the photoreceptive layer of the present invention, when at least one selected from oxygen atoms, carbon atoms, and nitrogen atoms is contained, it is contained in a uniform distribution state in the layer thickness direction, or
Or whether it should be contained in a non-uniform distribution state in the layer thickness direction depends on the above-mentioned objectives and expected effects, and therefore the amount to be contained will also vary.

That is, when the purpose is to increase the photosensitivity and dark resistance of a light-receiving member, the carbon atoms contained in the light-receiving layer are uniformly distributed throughout the entire layer area of the light-receiving layer. The amount of at least one selected from oxygen atoms and nitrogen atoms may be relatively small.

In addition, when the purpose is to improve the adhesion between the support and the light-receiving layer, the constituent layer 102' at the end of the light-receiving layer on the support side
Either they are contained uniformly in the photoreceptive layer, or they are contained in a distribution state such that the distribution concentration of at least one selected from carbon atoms, oxygen atoms, and nitrogen atoms is high at the end of the support side of the photoreceptive layer. In this case, the amount of at least one selected from oxygen atoms, carbon atoms, and nitrogen atoms to be contained in the photoreceptive layer is relatively large in order to ensure improved adhesion with the support. be done.

In the light-receiving member of the present invention, the amount of at least one selected from oxygen atoms, carbon atoms, and nitrogen atoms to be contained in the light-receiving layer takes into consideration the characteristics required for the light-receiving layer as described above. In addition, it is determined by taking into account organic relationships such as the characteristics at the contact interface with the support, and is usually 0. OO1~50 atomic
%, preferably 0.002-40 atomic%
, optimally 0.003 to 30 atomic.

By the way, if it is contained in the entire layer area of the photoreceptive layer, or if the proportion of the layer thickness of a part of the layer area to be contained in the layer thickness of the photoreceptive layer is large, the above-mentioned upper limit of the amount to be included. is made smaller. That is, in that case, for example, when the layer thickness of the layer region to be contained is 215% of the layer thickness of the photoreceptive layer, the amount to be contained is usually 30 atomic % or less, preferably 20 atomic % or less.
mic% or less, optimally 10 atomic'% or less.

Next, the amount of at least one selected from oxygen atoms, carbon atoms, and nitrogen atoms to be contained in the photoreceptive layer of the present invention is
The amount is relatively large on the support side, decreases from the end on the support side to the end on the free surface side, and becomes relatively small near the end on the free surface side of the photoreceptive layer, or
Some typical examples in which the distribution is made to be substantially close to zero will be explained with reference to FIGS. 16 to 2. However, the present invention is not limited to these examples.

[Hereinafter, at least one selected from carbon atoms, oxygen atoms, and nitrogen atoms will be expressed as [atoms (0, C, N) J]. ] In the 16th to 7th diagrams, the horizontal axis represents the distribution concentration C of atoms (0, C, N), the vertical axis represents the layer thickness of the photoreceptive layer, and ta represents the interface position between the support and the photoreceptive layer. , tT indicates the position of the end face on the free surface side of the photoreceptive layer.

Figure 16 shows atoms (0, C,
A first typical example of the distribution state of N) in the layer thickness direction is shown. In this example, from the interface position tn between the photoreceptive layer containing atoms (0, C, N) and the support to the position t1, atoms (0, C, N)
, C, N) takes a constant value of 01, and from the position ts to the end surface position tT on the free surface side, the atoms (0, C,
The distributed concentration C of atoms (N) continuously decreases from the concentration C2, and at position 11, the distributed concentration of atoms (0, C, N) becomes C3.

In another typical example shown in FIG. 17, the distribution concentration C of atoms (0, C, N) contained in the photoreceptive layer is at the position tB
The concentration decreases continuously from C4 to position tT, and reaches C5 at position tr.

In the example shown in FIG. 18, the distribution concentration C of atoms (0, C, N) maintains a constant value of concentration C6 from position tn to position t2, and from position t2 to position tT, the distribution concentration C of atoms (0, C, N) maintains a constant value of concentration C6.
, C, N) gradually and continuously decreases from the concentration C7, and at position tT, the distributed concentration C of atoms (0°C, N) becomes substantially zero.

In the example shown in FIG. 19, the distribution concentration C of atoms (0, C, N) gradually decreases from the concentration C8 from position tB to position tT, and at position k, the distribution concentration C of atoms (0, C, N) gradually decreases from the concentration C8.
, N) is substantially zero.

In the example shown in Figure A, the distribution concentration C of atoms (0, C, N)
is at a constant value of concentration C9 between position tB and position t3, and decreases in a negative order number from position C9 to concentration C+o between position t3 and position tT.

In the example shown in FIG. 21, the distribution concentration C of atoms (0, C, N) is at a constant concentration Co from position tB to position t4, and the concentration CI2 from position L4 to position tT. The concentration decreases in a linear manner from to the concentration CI3.

In the example shown in Figure n, the distribution concentration C of atoms (0, C, N) is
It decreases linearly from I4 to substantially zero.

In the example shown in Figure n, the distribution concentration C of atoms (0, C, N)
decreases linearly from the concentration C+s to the concentration CI6 from position tB to position t5, and maintains a constant value of concentration C+e from position t5 to position 11.

Finally, in the example shown in FIG. 24, the distribution concentration C of atoms (0, C, N) is the concentration CI7 at the position tB, and from the position ta to the position t6, it gradually decreases from the concentration CI7. , the concentration decreases rapidly near the position t6, and becomes the concentration C1s at the position t6. Next, from position 1 to position t
Up to 7, the concentration decreases rapidly at first, and then gradually decreases, and reaches the concentration CI9 at position tf.

Further, between the positions t7 and t8, the concentration gradually decreases very slowly, and reaches the concentration C20 at the position t8. Furthermore, from position t8 to position k, the concentration gradually decreases from C20 to substantially zero.

As in the examples shown in FIGS. 16 to 24, the support side end of the photoreceptive layer has a portion with a high distribution concentration C of atoms (0, C, N), and the photoreceptive layer has a free surface side end. In the case where the distribution concentration C has a considerably low part or a part with a concentration substantially close to zero, atoms (0, C, N ) by providing a localized area where the distribution concentration of The adhesion between the layers can be improved even more efficiently.

The localized region may be the entire partial layer region of the support side end of the photoreceptive layer containing atoms (0, C, N),
Alternatively, it may be a part of the light-receiving layer, and it is determined as appropriate depending on the characteristics required of the light-receiving layer to be formed.

The amount of atoms (0, C, N) contained in the localized region is such that the maximum molecular concentration C of atoms (0, C, N) is 500 at
omic ppm or more, preferably 800 atomic
c ppm or more, optimally 1000 atomic p
It is desirable to have a distribution state in which the amount is equal to or higher than pm.

Furthermore, in the light-receiving member of the present invention, a substance for controlling conductivity can be contained in the light-receiving layer in a uniform or non-uniform distribution in the entire layer region or a part of the layer region, if necessary. .

Examples of the substance that controls conductivity include so-called impurities in the semiconductor field, which are atoms belonging to group Ⅰ of the periodic table (hereinafter simply referred to as ``group Ⅰ'') that give P-type conductivity.
"group atoms". ), or an atom belonging to Group V of the periodic table (hereinafter simply referred to as "Group I atom") that provides n-type conductivity. Specifically, as group Ⅰ atoms,
B (boron), M (aluminum), Ga (gallium),
Examples include In (indium) and T/11 (thallium), but particularly preferred are B and Ga. Also, as group Ⅰ atoms, P (phosphorus), As (arsenic)
, Sb (antimony), Bi (bismane), etc., but particularly preferred are p and sb.

When the photoreceptive layer of the present invention contains group (III) atoms or group V atoms, which are substances that control conductivity, whether to contain them in the entire layer region or in some layer regions will be described later. Depending on the purpose or expected effect, the amount to be included will also vary.

That is, when the main purpose is to control the conductivity type and/or conductivity of the photoreceptive layer, it is necessary to contain the group (III) atoms or V atoms in the entire layer area of the photoreceptor layer. The content of group atoms may be relatively small, usually I
-3 to I X 103103 at ppm, preferably 5 X 10-2 to 5 X 102102 at
o ppm, optimally I x 10” to 2 x 10
It is 2102ato ppm.

In addition, the constituent layer 102' in contact with the support may contain Group 1 atoms or Group Ⅰ atoms in a uniform distribution state, or the distribution concentration of Group Ⅰ atoms or Group V atoms in the layer thickness direction may be When it is contained in a high concentration on the side in contact with the support, such group (1) atoms or a constituent layer containing such group (1) atoms (constituent layer 102' in FIG.
) or a layer region containing a high concentration of group (I) atoms or group V atoms functions as a charge injection blocking layer. In other words, when the group Ⅰ atoms are contained, when the free surface of the photoreceptive layer is subjected to polar charging treatment, the movement of electrons injected from the support side into the photoreceptor layer is made more efficient. In addition, when the group Ⅰ atoms are contained, when the free surface of the photoreceptive layer is charged to e polarity, it is injected from the support side into the photoreceptor layer. The movement of holes can be more efficiently blocked. and,
In such a case, the content is relatively large, specifically, I~5 x 10' atomic ppm, preferably 50 - I x 10' atomic ppm.
, optimally I x 10” to 5 x 103ato10
3ato. Furthermore, in order to efficiently exhibit the effect of the charge injection blocking layer, it is necessary to set the layer thickness of the layer or layer region provided at the end of the support side containing group (III) atoms or group (III) atoms to be t. , when the layer thickness of the photoreceptive layer is T, t/
It is desirable that the relationship T≦0.4 holds true, and more preferably that the value of the relational expression is 0.35 or less, most preferably 0.3 or less. Further, the layer thickness t of the layer or layer region is generally 3×10"3 to 10μ, preferably 4×10−3 to 8μ, optimally 5×
It is desirable to set it as to-3~5μ.

The amount of Group Ⅰ atoms or Group Ⅰ atoms contained in the photoreceptive layer is relatively large on the support side and decreases from the support side to the side with the free surface, and the free surface of the photoreceptor layer is A typical example of distributing Group A atoms or Group I atoms in a relatively small amount or substantially close to zero is when oxygen atoms, carbon atoms, etc. are distributed in the aforementioned photoreceptive layer. Nos. 16 to 2 exemplified in the case of containing at least one of atoms or nitrogen atoms
Although the present invention can be explained using an example similar to that shown in FIG. 4, the present invention is not limited to these examples.

As shown in the examples shown in FIGS. 16 to U, the photoreceptive layer has a portion with a high distribution concentration C of Group II atoms or Group V atoms on the side closer to the support side, and On the free surface side, if the distribution concentration C has a portion with a considerably low concentration or a portion with a concentration substantially close to zero, the group By providing a localized region where the distribution concentration is relatively high, preferably by providing the localized region within 5μ from the interface position in contact with the support surface, the distribution of group (III) atoms or group (III) atoms can be improved. The above-mentioned effect that the layer region having a high concentration forms a charge injection blocking layer can be achieved even more efficiently.

As mentioned above, regarding the distribution state of Group 1 atoms or Group Ⅰ atoms,
Although the effects of each have been described individually, in order to obtain a light-receiving member having characteristics that can achieve the desired purpose, the distribution state of these Group 1 atoms or Group II atoms and their inclusion in the light-receiving layer are important. The amounts of Group 111 atoms or Group Ⅰ atoms are used in appropriate combinations as necessary.

For example, when a charge injection blocking layer is provided at the end of the photoreceptive layer on the support side, the charge injection blocking layer (102'' in FIG. 1) other than the charge injection blocking layer (102' in FIG. 1) is The blocking layer may contain a substance that controls conductivity with a polarity different from that of the substance that controls conductivity, or a substance that controls conductivity with the same polarity may be used to block charge injection. It may be contained in an amount much smaller than the amount contained in the layer.

Furthermore, in the light-receiving member of the present invention, as a constituent layer provided at the end on the support side, instead of the charge injection blocking layer,
A so-called barrier layer made of an electrically insulating material can also be provided, or both the barrier layer and the charge injection blocking layer can be constituent layers. Examples of materials constituting such a barrier layer include inorganic electrically insulating materials such as MzOs, SiO□, and Si3N4, and organic electrically insulating materials such as polycarbonate.

By having the above-described layer structure, the light-receiving member of the present invention can solve all of the problems of the light-receiving member having a multilayer light-receiving layer made of amorphous 7-recon, and in particular, can solve Even when laser light, which is coherent monochromatic light, is used as a light source, it is possible to significantly prevent the appearance of interference fringes in images formed due to interference phenomena, and to form extremely high-quality visible images.

In addition, the light-receiving member of the present invention has high photosensitivity in the entire visible light range, and is particularly excellent in photosensitivity characteristics on the long wavelength side, so it is particularly excellent in matching with semiconductor lasers, and has a high optical response. It exhibits excellent electrical, optical, photoconductive properties, electrical pressure resistance, and use environment properties.

In particular, when applied as a light-receiving member for electrophotography, there is no influence of residual potential on image formation, its electrical characteristics are stable, it is highly sensitive, and it has a high signal-to-noise ratio. Therefore, it has excellent light fatigue resistance and repeated use characteristics, and can stably and repeatedly produce high-quality images with high density, clear halftones, and high resolution.

Next, a method for forming the photoreceptive layer of the present invention will be explained.

The amorphous material constituting the photoreceptive layer of the present invention is deposited by a vacuum deposition method that utilizes a discharge phenomenon such as a glow discharge method, a sputtering method, or an ion blasting method. These manufacturing methods are selected and adopted as appropriate depending on factors such as manufacturing conditions, level of equipment capital investment, manufacturing scale, and desired characteristics of the light-receiving member to be manufactured. The glow discharge method or the sputtering method is preferable because the conditions for manufacturing the receiving member are relatively easy to adjust, and carbon atoms and hydrogen atoms can be easily introduced together with silicon atoms. It is.

Alternatively, a glow discharge method and a sputtering method may be used together in the same system.

For example, a-8i (H,X
) In order to form a layer composed of 0 or
A raw material gas for introduction is introduced into a deposition chamber whose interior can be reduced in pressure, a glow discharge is generated in the deposition chamber, and a-8i (H,
) to form a layer consisting of

The raw material gas for supplying Si is S i H4,5
Examples include silicon hydride (silanes) in a gaseous state or that can be gasified, such as izHa, 513H8, 5i4H+o, etc. In particular, SiH4, Si2H6 is preferred.

Further, as the raw material gas for introducing halogen atoms, there are many halogen compounds, such as evaporated halogen gas,
Gaseous or gasifiable halogen compounds such as halogen (l), interhalogen compounds, and halogen-substituted silane derivatives are preferred.Specifically, fluorine, chlorine, bromine,
Iodine halogen gas, BrF, C-eF, C
ARlBrFs, BrF3, IF), IC-e, IBr
Interhalogen compounds such as SiF4, Si2F
Examples include silicon halides such as G, S1C14, and SiBr4. As mentioned above, when using gaseous or gasifiable silicon halogenide, it is possible to obtain silicon halides composed of a-8i containing nitrogen atoms without using a separate raw material gas for supplying Si. This method is particularly effective because it allows the formation of a layer of

In addition, as the raw material gas for supplying hydrogen atoms, hydrogen gas, gas, halides such as HCJ3, HBr, HI, SiH4, Si2H6, 5t3H, Si4Hl, etc.
Silicon hydride such as o, or SiH2F2, SiH2 2.5iH2CE2, S1HCe3.5iH2Br2
．． 5iHBr3. It is possible to use gaseous or gasifiable substances such as non-rogen-substituted silicon hydride such as silica hydride, etc., and when these raw material gases are used, they are extremely effective in terms of controlling electrical or photoelectric properties. This is effective because the content of hydrogen atoms (H) in a certain area can be easily controlled. When the above-mentioned 10-hydrogenide or the above-mentioned halogen-substituted silicon hydride is used, it is particularly effective because 0 hydrogen atoms are also introduced at the same time as the halogen atoms are introduced.

In order to form a layer consisting of a-8i (-H, A plasma atmosphere of the above-mentioned silicon compound gas containing nitrogen atoms may be introduced into the deposition chamber to form a plasma atmosphere of the gas.

In addition, when introducing hydrogen atoms, a raw material gas for introducing hydrogen atoms, such as H2 or the above-mentioned silane gases, is introduced into the deposition chamber for sputtering to form a plasma atmosphere of the gas. good.

For example, in the case of the reactive sputtering method, a Si target is used, and a gas for introducing nitrogen atoms and a phosphorus gas, including inert gases such as He and Ar as necessary, are introduced into the deposition chamber to generate a plasma. By forming an atmosphere and sputtering the Si target, a-8i(H) is deposited on the support.

A layer consisting of X) is formed.

To form a layer composed of a-8iGe (He
A raw material gas for supplying Ge that can supply Ge) and a source gas for supplying hydrogen atoms (H) and/or hydrogen atoms (X) that can supply hydrogen atoms (H) and/or hydrogen atoms (X) The raw material gas is introduced at a desired gas pressure into a deposition chamber whose interior can be depressurized, and a glow discharge is generated in the deposition chamber onto the surface of a predetermined support that has been placed at a predetermined position in advance.
A layer composed of a-3iGe (H,X) is formed.

Substances that can be used as the raw material gas for supplying Si, the raw material gas for supplying ζ-rogen atoms, and the raw material gas for supplying hydrogen atoms include those used when forming the layer composed of a 81 (He x ) described above. What you have is used as is.

In addition, the substances that can be the raw material gas for supplying Ge include GeH4, Ge2H6, Ge, H, Ge, Hl,
).

Ge5 H, □, Ge6HI4s Ge7H16s
Germanium hydride in a gaseous state or capable of being gasified can be used, such as ce@a, s, GegH26.

In particular, GeH4, Ge2H, and Ge3
H, is preferred.

To form a layer composed of a-8iGe (H,X) by sputtering, two targets, one made of silicon and the other made of germanium, are
Alternatively, sputtering may be performed using a target made of silicon and germanium in a desired gas atmosphere.

a-8iGe(H,X
), for example, polycrystalline silicon or single-crystal silicon and polycrystalline germanium or single-crystal germanium are respectively housed in the evaporation port as evaporation sources, and the evaporation sources are heated using resistance heating or This can be accomplished by heating and evaporating by an electron beam method (E, B, method) or the like, and passing the flying evaporated material through a desired gas plasma atmosphere.

In both the sputtering method and the ion plating method, in order to contain halogen atoms in the layer to be formed, a gas of the above-mentioned halide or a silicon compound containing halogen atoms is introduced into the deposition chamber, and the gas is It is sufficient to form a plasma atmosphere of In addition, when introducing hydrogen atoms, a raw material gas for supplying hydrogen atoms, such as H2 or the above-mentioned gases such as hydrogenated silanes and/or germanium hydride, is introduced into the deposition chamber for sputtering. What is necessary is to form a plasma atmosphere of the following gases. Furthermore, as the raw material gas for supplying halogen atoms, the above-mentioned halides or silicon compounds containing halogen can be cited as effective ones.
Hydrogen halides such as Br, HI, SiH2F2, S
iH2F2, SiH2C62, 5iHC63, 5iH2
Halogen-substituted silicon hydride such as Br2.5iHBr3, and GeHF3, GeH2F2, GeH3F, Ge
HC-03, GeH2C-C2, GeH3C-e, Ge
HBr, GeH2Br2, GeH3Br, GeH
I,, hydrogenated germanium halide such as QeH2Iz, GeH3I, GeF4, GeC134, GeBr4
, GeI4. GeF2, GeC132, GeB I2
Gaseous or gasifiable materials such as germanium halides such as , Ge12, etc. can also be used as effective starting materials.

To form a photoreceptive layer made of amorphous silicon containing tin atoms (hereinafter referred to as raSiSn(H,X)J) using a glow discharge method, a sputtering method, or an ion blating method , the above a-
When forming a layer composed of 8iGe (H,X),
The starting material for supplying germanium atoms is a tin atom (Sn
) by using it in place of the starting material for supply and incorporating it in a controlled amount into the layer being formed.

Substances that can serve as raw material gas for supplying tin atoms (Sn) include tin hydride (SnH4), SnF2, and SnF.
,,SnC,C2,5nCI34.5nBrz,SnB
Gaseous or gasifiable tin halides such as r4, SnI2, SnI4, etc. can be used. When using tin halides, a-3i containing halogen atoms can be used on a predetermined support. This is particularly effective because it allows the formation of layers consisting of

Among these, SnC and C4 are preferred from the viewpoint of ease of handling during layer creation work and good Sn supply efficiency.

When Snα4 is used as a starting material for supplying tin atoms (Sn), in order to gasify it, solid S
While heating nα4, it is desirable to blow an inert gas such as Ar, He, etc., and perform bubbling using the inert gas. will be introduced.

a-Si(H,X) or a-Si(H,X) or a-
To form a layer composed of an amorphous material in which 8i (Ge, Sn) (H,
a Sl (L X ) or a-3i (Ge, 5
n) (H.

When forming the layer of X) or a-8i
(Ge, Sn) (H,

As a starting material for such introduction of atoms (0, C, N), most gaseous substances or substances that can be gasified have at least atoms (0, C, N) as constituent atoms. can be used.

Specifically, as starting materials for introducing oxygen atoms (0), for example, oxygen (0□), ozone (O3), -nitrogen oxide (N
O), nitrogen dioxide (NO2), -nitrogen dioxide (N20)
, nitrogen sesquioxide (N203), trinitrogen tetraoxide (N204)
), nitrogen sesquioxide (N205), nitrogen trioxide (NO
3), silicon atom (Si), oxygen atom (0), and hydrogen atom U are constituent atoms. For example, disiloxane (
H3SiO8iH1), )! J Shio Kisa:/
Examples include lower siloxanes such as (H3SiO8iH20SiH3), and examples of starting materials for introducing carbon atoms (C) include methane (CH4), ethane (C2H6), etc.
, propane (C3H8), n-butane (n C4HI
O), saturated hydrocarbons having 1 to 5 carbon atoms such as pentane (C5H12), ethylene (C2H4), propylene (C3H
6), butene-1 (C4L), butene-2 (C4Ha
), inbutylene (C4L), pentene (Cs Lo
), acetylene (C2H2), methylacetylene (C3H4 nibutin (
Examples of starting materials for introducing nitrogen atoms include nitrogen (N2), ammonia (NH3), etc.
, hydrazine (6NNH2), hydrogen azide (HN3N
)3, ammonium azide<HH4N3), nitrogen trifluoride CF,N), nitrogen tetrafluoride CF4N), and the like.

Specifically, the starting materials for introducing Group Ⅰ atoms include B2H6, B4H, and B4H. ,B,H,,B
Boron hydrides such as sHu, B6H1G, B6H12, B6H14, BF, B(, B3, BBr, etc.), boron halogenides, and the like.

In addition, MC, B8, GaC138, Ga (CHs
)2, In(u3, Tnc-C3, etc.) can also be mentioned.

As a starting material for introducing a group V atom, specifically for introducing a phosphorus atom, hydrogen ratios such as PH1, P2H4, PH
4I, PF, PH, PCB, PCA, PB
Examples include halogen north neighbors such as rl, PBr3, PI, etc. In addition, A8H3, AsF3. AsC-83, AaB
r,,,AsF5.5bH8,SbF,,SbF,,5
bcI31.5bCj3. , BiH3, BiCI3g
1, B1Br3, etc. can also be mentioned as effective starting materials for introducing Group V atoms.

As described above, the light-receiving layer of the light-receiving member of the present invention is formed using a glow discharge method, a sputtering method, etc. Or, control of the content of each of Group III atoms, hydrogen atoms and/or halogen atoms,
This is carried out by controlling the gas flow rate of each starting material for supplying atoms flowing into the deposition chamber or the gas flow rate ratio between the starting materials for supplying atoms.

In addition, conditions such as the support temperature, gas pressure in the deposition chamber, and discharge power during the formation of the photoreceptive layer of the present invention are important factors in order to obtain a photoreceptive member with desired characteristics, and the It is selected as appropriate, taking into consideration the function.

Furthermore, these layer formation conditions may vary depending on the type and amount of each of the atoms mentioned above to be included in the photoreceptive layer, and are determined by taking into account the type and amount of atoms to be included. There is also a need.

Specifically, a layer consisting of a-8t (H, When forming a receptor layer, the support temperature is usually 50 to 350°C.
The temperature is preferably 0.degree. C., particularly preferably 0.degree. C. to 250.degree. The gas pressure in the deposition chamber is usually 0.01 to ITorr, but
Particularly preferably, it is 0.1 to 0.5 Torr. Further, the discharge power is usually 0.005 to 50 W/crA, more preferably 0.01 to 30 W/crA.
ni, particularly preferably 0. O1 to 20 W/cA.

When forming a layer consisting of a-3iGe (H,X),
Or a-8iGe (H,X) containing atoms (0, C, N) or/and group II atoms or group II atoms
In the case of forming a layer consisting of
Usually 50-350℃, more preferably 50-350℃
00°C, particularly preferably 100 to 300°C. The gas pressure inside the deposition chamber is usually 0.01 to 5 Torr.
However, it is preferably 0.001 to 3 Torr, particularly preferably 0.1 to IThrr.

Further, the discharge power is usually 0.005 to 50 W/cd, preferably 0.01 to 30 W/cd, and particularly preferably 0.01 to 20 W/cd.

However, the specific conditions for layer formation, such as support temperature, discharge power, and gas pressure in the deposition chamber, are usually difficult to determine individually. Therefore, in order to form an amorphous material layer with desired characteristics, it is desirable to determine optimal conditions for layer formation based on mutual and organic relationships.

By the way, the distribution state of germanium atoms and/or tin atoms, oxygen atoms, carbon atoms, nitrogen atoms, Group Ⅰ atoms or Group Ⅰ atoms, or hydrogen atoms and/or halogen atoms contained in the photoreceptive layer of the present invention is In order to achieve uniformity, it is necessary to keep the above-mentioned conditions constant when forming the photosensitive layer.

Further, in the present invention, when forming the photoreceptive layer, germanium atoms and/or tin atoms contained in the layer,
In order to form a layer having a desired distribution state in the layer thickness direction by changing the distribution concentration of oxygen atoms, carbon atoms, nitrogen atoms, or group II atoms or group V atoms in the layer thickness direction, a glow discharge method is used. When using germanium atoms and/or tin atoms, oxygen atoms, carbon atoms, nitrogen atoms, or gases of starting materials for introducing Group I atoms or Group V atoms into the deposition chamber. The flow rate is changed as appropriate according to a desired rate of change, and other conditions are kept constant. Specifically, in order to change the gas flow rate, the opening of a predetermined needle valve provided in the middle of the gas flow path system is gradually opened by some commonly used method, such as manually or by an externally driven motor. All you have to do is perform an operation to change it. At this time, the rate of change in flow rate does not need to be linear; for example, a microcomputer or the like can be used to control the amount of -cN according to a pre-designed rate of change curve to obtain a desired content rate curve. .

In addition, when forming the photoreceptive layer using a sputtering method, the distribution concentration in the layer thickness direction of germanium atoms, tin atoms, oxygen atoms, carbon atoms, nitrogen atoms, or group II atoms or group V atoms is determined by the layer thickness. In order to form a desired distribution state in the layer thickness direction, germanium atoms, tin atoms, oxygen atoms, carbon atoms, nitrogen atoms, or Group Ⅰ atoms can be used, as in the case of using the glow discharge method. Alternatively, the starting material for introducing Group V atoms is used in a gaseous state, and the gas flow rate when introducing the gas into the deposition chamber is varied according to the desired rate of change.

〔Example〕

Hereinafter, the present invention will be explained in more detail according to Examples 1 to 11, but the present invention is not limited thereto.

In each example, the photoreceptive layer was formed using a glow discharge method. FIG. 5 shows an apparatus for manufacturing a light-receiving member of the present invention using a glow discharge method.

2502.2503, 2504, 2505 in the diagram
, 2506 is sealed with raw material gas for forming each layer of the present invention, and as an example, 2502 is SiF4 gas (purity 99.99
9%) cylinder, 2503 is B2H6 gas diluted with B2 (purity 99.999%, hereinafter abbreviated as B2HJH).
Cylinder, 2504 is CH, gas (99.999% purity)
Cylinder 2505 is GeF4 gas (purity 99.999
%) cylinder, 2506 is an inert gas (He) cylinder. And 2506' is a closed container containing Snα4.

In order to flow these gases into the reaction chamber 2501, valves 2522 to 2526 of gas cylinders 2502 to 2506,
Make sure that the saw 1 valve 2535 is closed, and also check the inflow valves 2512 to 2516 and the outflow valve 2517.
~2521, confirming that the auxiliary valves 2532 and 2533 are open, first open the main valve 2534 to exhaust the reaction chamber 2501 and gas piping. Next, vacuum M
An example of forming a light-receiving layer on the cylinder 2537 will be described below.

First, SiF, gas from gas cylinder 2502, B2H6/B2 gas from gas cylinder 2503, gas cylinder 25
CH4 gas from 04, GeF4 from gas cylinder 2505
valves 2522, 2523, 2524 for each gas.
．． Open 2525 and outlet pressure gauges 2527, 2528
．． Adjust the pressure of 2529, 2530 to 1 kg/cni, and inlet valve 2512.2513.2514.251
5 gradually open the mass flow controller, 2507.
2508.2509.2510. Subsequently, the outflow valves 2517, 2518, 2519.2
520 auxiliary valve 2532 is gradually opened to allow gas to flow into the reaction chamber 2501. At this time, SiF, gas flow rate, GeF4 gas flow rate, B2H6/B2 gas flow rate, and C
Outlet valve 2 so that the ratio of H4 gas flow rate is the desired value.
517, 251.8.25'19.2520, and the main valve 2534 while checking the reading of the vacuum gauge 2536 so that the pressure inside the reaction chamber 2501 reaches the desired value.
Adjust the aperture. After confirming that the temperature of the base cylinder 2537 is set to a temperature in the range of 50 to 400°C by the heating heater 2538, the power supply 2537
40 to a desired power to generate a glow discharge in the reaction chamber 2501. Then, the microcomputer
(not shown) to control the gas flow rates of SiF4 gas, GeF4 gas, CH4 gas, and B2 H6/H2 gas according to a pre-designed flow rate change line, silicon atoms are first deposited on the base cylinder 2537. ,
A layer 102' containing carbon atoms, germanium atoms, and boron atoms is formed. At the stage when the layer 102' has been formed to a desired layer thickness, the outflow pulp 2518, 2520 is completely closed, and the glow discharge is continued in the same manner except for changing the discharge conditions as necessary to form the layer 102'.
A layer 10 substantially free of germanium atoms is formed on the layer 10.
2” can be formed.

Needless to say, all the outflow pulps other than the gas outflow pulp necessary for forming each layer are closed, and when forming each layer, the gas used to form the previous layer is allowed to flow out into the reaction chamber 2501. In order to avoid remaining in the gas piping leading from the pulps 2517 to 2521 to the inside of the reaction chamber 2501, the outflow pulps 2517 to 2521 are closed, the auxiliary valves 2532 and 2533 are opened, and the main valve 2534 is fully opened to temporarily raise the temperature in the system. Evacuate to vacuum. Perform operations as necessary.

In addition, when containing tin atoms in the photoreceptive layer and using a gas containing 5nC-e4 as a starting material, the solid 5nC-e4 contained in the 2506'
While heating the ce4 using a heating means (not shown), an inert gas such as Ar or He is blown into the 5n(u4) from an inert gas cylinder 2506 to cause bubbling. The gas is the aforementioned S
The iF4 gas, GeF4 gas, B2H6/H2 gas, etc. are introduced into the reaction chamber using the same procedure.

Test Example Using a SUS stainless steel rigid sphere with a diameter of 2 mm, the surface of an aluminum alloy cylinder (diameter: 60 mm, length: 298 mm) was treated to form irregularities using the equipment shown in Figure 6 above. I let it happen.

When we investigated the relationship between the diameter R' of the true sphere, the falling height h, and the width of the curvature R1 of the trace depression, we found that the curvature R and width of the trace depression are as follows.
It was confirmed that it is determined by conditions such as the diameter R' of the true sphere and the falling height h. In addition, the pitch of the dents (the density of the dents and the pitch of the unevenness) is determined by the rotational speed of the cylinder,
It has been confirmed that it is possible to adjust the pitch to a desired pitch by controlling the number of rotations, the amount of fall of the rigid true sphere, etc.

Example 1 The surface of an aluminum alloy cylinder was treated in the same manner as in the test example to obtain a cylindrical M support (cylinder rot 101 to 106) having D and vertical as shown in the upper column of Table 1 (A).

Next, a light-receiving layer was formed on the M support (cylinder, % 101-106) using the manufacturing apparatus shown in FIG. 5 under the conditions shown in Table 1a3) below.

These light-receiving members were subjected to image exposure by irradiating laser light with a wavelength of 780 mm and a spot diameter of 80 μm using the image exposure apparatus shown in FIG. 26, and then development and transfer were performed to obtain images. The occurrence of interference fringes in the obtained image was as shown in the lower column of Table 1 (A).

Note that FIG. 26(A) is a flat lid 1 schematically showing the entire exposure apparatus, and FIG. 26(A) is a schematic side view schematically showing the entire exposure apparatus. In the figure, 2601 is a light receiving member, 2
602 is a semiconductor laser, 2603 is an fO lens, 26
04 indicates a polygon mirror.

Next, as a comparison, an aluminum alloy cylinder (4107
) (diameter 60, length 298, uneven pitch 100μm,
A light-receiving member was produced in the same manner as described above using the unevenness (depth of 3 μm).

When the obtained light-receiving member was observed with an electron microscope, it was found that the support surface, the layer interface of the light-receiving layer, and the first surface of the light-receiving layer were parallel to each other. Using this light-receiving member, images were formed in the same manner as described above, and the obtained images were evaluated in the same manner as described above. The results were as shown in the bottom column of the table for prisoner 1.

Example 2 A photoreceptive layer was formed on the A2 support (cylinders Nα101 to 107) in the same manner as in Example 1, except that the photoreceptive layer was formed according to the layer forming conditions shown in Table 2B.

In addition, siF, gas and GeF at the time of forming the photoreceptive layer
The gas flow rates of the four gases were automatically adjusted by microcomputer control according to the flow rate change line shown in FIG.

When an image was formed on the obtained light-receiving member in the same manner as in Example 1, the occurrence of interference fringes in the obtained image was as shown in the lower column of Table 2A.

Examples 3 to 10 A1 support (
A photoreceptive layer was formed on samples N1103 to 106). At this time, in each Example, the gas flow rate of the gas used during the formation of the photoreceptive layer was automatically adjusted by microcomputer control according to the flow rate change lines shown in FIGS. 28-35.

Further, in Examples 5 to 10, the boron atoms contained in the photoreceptive layer were introduced into the entire layer as much as possible to about 2001)I)m.

When images were formed on these light-receiving members in the same manner as in Example 1, the images obtained were of extremely good quality, with no interference fringes observed.

[Summary of effects of the invention]

The light-receiving member of the present invention has the above-described layer structure, so that it can solve all of the problems of the light-receiving member having a light-receiving layer made of amorphous silicon, and in particular, it can solve all of the problems of the light-receiving member having a light-receiving layer made of amorphous silicon. Even when laser light, which is monochromatic light, is used as a light source, the appearance of interference stripes in the formed image due to interference phenomena can be significantly prevented, and a visible image of extremely high quality can be formed.

In addition, the light-receiving member of the present invention has high photosensitivity in the entire visible light range, and is particularly excellent in photosensitivity characteristics on the long wavelength side, so it is particularly excellent in matching with semiconductor lasers, and has a high optical response. is fast and has extremely superior electrical, optical, and optical performance.
Indicates electrical characteristics, electrical voltage resistance, and operating environment characteristics.

In particular, when applied as a light-receiving member for electrophotography, there is no influence of residual potential on image formation, its electrical characteristics are stable, it is highly sensitive, and it has a high signal-to-noise ratio. Therefore, it has excellent light fatigue resistance and repeated use characteristics, and can stably and repeatedly produce high-quality images with high density, clear halftones, and high resolution.

[Brief explanation of drawings]

FIG. 1 is a diagram schematically showing an example of the light-receiving member of the present invention, and FIGS. 2 and 3 are for explaining the principle of preventing the occurrence of interference fringes in the light-receiving member of the present invention. FIG. 2 is a partially enlarged view of the support surface, and FIG. 3 is a diagram showing how interference fringes can be prevented in a light-receiving member having irregularities formed by spherical trace depressions on the support surface. FIG. 2 is a diagram showing that interference fringes occur in a light-receiving member in which a light-receiving layer is deposited on a support whose surface is regularly roughened. FIGS. 4 and 5 are schematic diagrams for explaining the uneven shape of the support surface of the light receiving member of the present invention and the method for producing the uneven shape. FIG. 6 is a diagram schematically showing a configuration example of an apparatus suitable for forming the uneven shape provided on the support of the light-receiving member of the present invention, and FIG. 6(A) is a front view. , 6th
Figure a3) is a longitudinal sectional view. Figures 7 to 15 are diagrams showing the distribution state of germanilam atoms or tin atoms in the layer thickness direction in the photoreceptive layer of the present invention, and Figures 16 to 24 are
FIG. 3 is a diagram showing the distribution state of oxygen atoms, carbon atoms, nitrogen atoms, group (I) atoms, or group V atoms in the layer thickness direction in the photoreceptive layer of the present invention, and in each figure, the vertical axis is the layer of the photoreceptor layer. The thickness is shown, and the horizontal axis represents the distribution concentration of each atom. Fifth
The figure is an example of an apparatus for manufacturing the light-receiving layer of the light-receiving member of the present invention, and is a schematic explanatory diagram of a manufacturing apparatus using a glow discharge method. FIG. 26 is a diagram illustrating an image exposure apparatus using laser light. FIGS. n to 35 are diagrams showing changes in the gas flow rate ratio in forming the photoreceptive layer of the present invention, where the vertical axis represents the layer thickness of the photoreceptive layer, and the horizontal axis represents the gas flow rate of the gas used. Regarding FIGS. 1 to 3, 100... Light receiving member 101... Support body 102
...Photoreceptive layer 102'...Layer 102'' containing at least one of germanium atoms or tin atoms...Layer 201.301...Layer containing neither germanium atoms nor tin atoms 301...First Layer 202, 302...
・Second layer 103.203,303...free surface 20
4, 304, ... Regarding the interface box 4 and 5 between the first layer and the second layer 401.501... Support 402,502.
...Support surfaces 403, 503, 503'...
Rigid true sphere 404.504... Regarding the spherical depression in Figure 6 601... Cylinder, Dar 602... Rotating axis 6
03... Drive means 604... Dropping device 60
5... Rigid true sphere 606... Pole feeder 607... Vibrator 608... Recovery tank 609... Ball feeding device 610... Cleaning device 6
11...Cleaning liquid reservoir 612...Cleaning liquid collection tank 613...About the drop port in Fig. 5 2501...Reaction chambers 2502-2506...Gas cylinder 2506'...Tight closed container for SnC 2507 ~2511・Mass flow controller 251
2-2516... Inflow pulp 2517-2521... Outflow pulp 2522-2526... Pulp 2527-2531... Pressure regulator 2532, 2533... Auxiliary pulp 2534...
Main pulp 2535...IJ-kupulp 2536
... Vacuum gauge 2537 ... Base cylinder 25
38... Heater 2539... Motor 25
40...Regarding high frequency power source Fig. 26 2601...Light receiving member 2602...Semiconductor laser 2603...Fθ lens 2604...Engraving of polygon mirror drawing (no change in content) Fig. 5 50f 6th (A) Figure 7 Figure 8 Figure 9 Figure 10 Figures 1 and 1 Figure 12 □C Figure 13 Figure 14 □C Figure 16 Figure 17 □C Figure 22 1 □C Procedure Amendment (method) December 6, 1985 Michibe Uga, Commissioner of the Patent Office1, Indication of the case, Patent Application No. 219913 of 19852, Name of the invention, light-receiving member 3, Person making the amendment; Relationship Patent applicant address 3-30-2 Shimomaruko, Ota-ku, Tokyo Name
(Zoo) Canon Co., Ltd. 4, Agent Address: 3-12-61 Kojimachi, Chiyoda-ku, Tokyo
Kojimachi Green Building 5, Date of amendment order Voluntary...', J\°Me-7) 6. Statement of subject of amendment and drawings 7, Contents of amendment Engraving of the specification and drawings originally attached to the application. As shown in the attached sheet (no change in content)

Claims (11)

[Claims] (1) A photoreceptive member comprising, on a support, a photoreceptive layer made of an amorphous material containing silicon atoms and at least one selected from oxygen atoms, carbon atoms, and nitrogen atoms. The photoreceptive layer has a multilayer structure including, in order from the support side, a layer containing at least one of germanium atoms or tin atoms, and a layer containing neither germanium atoms nor tin atoms, and A light-receiving member characterized in that the surface of the support has an uneven shape formed by a plurality of spherical trace depressions. (2) The light-receiving member according to claim (1), wherein the light-receiving layer contains a substance that controls conductivity. (3) The photoreceptive member according to claim (1), wherein the photoreceptor layer has a charge injection blocking layer containing a substance that controls conductivity as one of the constituent layers. (4) The light-receiving member according to claim (1), wherein the light-receiving layer has a barrier layer as one of the constituent layers. (5) The light-receiving member according to claim (1), wherein the plurality of uneven shapes provided on the surface of the support are uneven shapes formed by spherical trace depressions having the same curvature. (6) The light-receiving member according to claim (1), wherein the plurality of uneven shapes provided on the surface of the support are uneven shapes formed by spherical trace depressions having the same curvature and the same width. (7) Claim (1), wherein the uneven shape on the surface of the support is an uneven shape due to trace depressions of the rigid true spheres obtained by naturally falling a plurality of rigid true spheres onto the support surface. The light-receiving member described in . (8) Claim No. 7, wherein the uneven shape on the surface of the support body is an uneven shape caused by trace depressions of rigid true spheres obtained by dropping rigid true spheres of approximately the same diameter from approximately the same height. The light-receiving member described in 2. (9) The curvature R and width D of the spherical trace depression are expressed by the following formula: 0.0
The light receiving member according to claim 1, which has a value satisfying 35≦D/R. (10) The light-receiving member according to claim (9), wherein the width of the spherical trace depression is 500 μm or less. (11) Claim No. 1, wherein the support is a metal body.
) The light-receiving member according to item 1.