JPS62103654A - Light recepting material - Google Patents

Abstract

PURPOSE:To stabilize electrical, optical, and photoconductive characteristics at all times by having plural rugged shapes consisting of spherical recesses of traces on the surface of a base and having the plural smaller rugged shapes in said spherical recesses of traces. CONSTITUTION:A light recepting material 100 has the light recepting layers consisting of the 1st layer 102 and 2nd layer 103 along the slopes of the ruggedness on the base 101 having the plural very small rugged shapes consisting of the spherical recesses of traces and further having the plural smaller rugged shapes within the spherical recesses of traces. More specifically, plural pieces of the ruggedness consisting of the spherical recesses of traces are provided on the base surface of the light recepting material having the plural layers on the base and the plural smaller rugged shapes are provided in the spherical recesses of traces, by which the problem of interference fringe patterns appearing in the stage of image formation is considerably solved.

Description

[Detailed description of the invention] [Technical field to which the invention pertains] The present invention relates to the use of light (here, light in a broad sense, such as ultraviolet rays, visible light,
It relates to a light-receiving member that is sensitive to electromagnetic waves such as infrared rays, X-rays, gamma rays, etc.

More specifically, the present invention relates to a light receiving member suitable for using coherent light such as laser light.

[Description of prior art]

As a method of recording digital image information as an image,
forming an electrostatic latent image by optically scanning a light-receiving member with a laser beam modulated according to digital image information;
There are known methods of recording images by developing the latent image, or performing further processes such as transfer and fixing as necessary.Among these, electrophotographic image forming methods use lasers that are small and inexpensive. Image recording is generally performed using a He--Ne laser or a semiconductor laser (usually having an emission wavelength of 650 to 820 nm).

By the way, as a light-receiving member for electrophotography suitable when using a semiconductor laser, in addition to being superior in consistency of its photosensitivity region compared to other types of light-receiving members,
Amorphous materials containing silicon atoms (hereinafter referred to as 1'-a-8iJ) is attracting attention.

However, regarding the light-receiving member, if the light-receiving layer is a single-layer a-8i layer, it is difficult to maintain its high photosensitivity while ensuring a dark resistance of 1012Ωσ or more required for electrophotography. , it is necessary to structurally contain hydrogen atoms, halogen atoms, or boron atoms in addition to these in a specific amount range in a controlled manner in the layer, so various conditions must be adjusted during layer formation. Strictly con l-.

There are considerable limitations on the latitude in the design of the light-receiving member, such as the requirement that the Proposals have been made to improve this design tolerance problem by making it possible to effectively utilize the high light sensitivity even if the dark resistance is low to some extent. That is, for example, % Kaisho 54-121
No. 743, JP-A-57-4053, JP-A-Sho. 5
As seen in Japanese Patent Publication No. 7-4172, a depletion layer is formed inside the photoreceptive layer by forming the photoreceptive layer into a layered structure of two or more layers having different conductivity characteristics, or as disclosed in JP-A No. 57-5
No. 2178, No. 52179, No. 52180, No. 58
No. 159, No. 58160, and No. 58161, a multilayer structure in which a barrier layer is provided between the support and the photoreceptive layer and/or on the upper surface of the photoreceptive layer is used. A light-receiving member with increased dark resistance has been proposed.

However, in such a light-receiving member in which the light-receiving layer has a multilayer structure, the thickness of each layer varies, and when performing laser recording using this material, since the laser light is coherent monochromatic light, the light-receiving layer The free surface on the laser beam irradiation side, each layer constituting the photoreceptive layer, and the layer interface between the support and the photoreceptor layer
From now on, the term "free surface" and "layer interface" will be used together.
It is called "interface". ) The reflected light beams that are reflected from each other often cause interference.

This interference phenomenon causes the so-called,
This appears as an interference fringe pattern and causes image defects. Particularly in the case of forming a half-tone image with high gradation, a blurred image with extremely poor distinguishability is produced.

Another important point is that as the wavelength range of the semiconductor laser light used becomes longer, the absorption of the laser light in the photoreceptive layer decreases, so there is a problem that the above-mentioned interference phenomenon becomes more noticeable. .

That is, for example, in a device with a structure of two or more layers (multilayer), interference effects occur in each of those layers, and each interference acts synergistically to create an interference fringe pattern. This directly affects the transfer member, and there is a problem that interference fringes corresponding to the interference fringe pattern are transferred and fixed onto the member and appear in a visible image, resulting in a defective image.

As a measure to solve these problems, (a) the surface of the support is diamond-cut to provide unevenness of ±5ooi to ±100OOX to form a light scattering surface (for example,
8-162975), (b) a method of providing a light absorbing layer by subjecting the surface of the aluminum support to black alumite treatment, or dispersing carbon, coloring pigments, or dyes in a resin (for example, Japanese Patent Application Laid-Open No. 8-162975); 57-165845), (c) A method of providing a light-scattering anti-reflection layer on the support surface by subjecting the surface of the aluminum support to satin-like alumite treatment or by sandblasting to provide fine grain-like irregularities. (For example, see Japanese Unexamined Patent Publication No. 57-16554.) etc. have been proposed.

Although these proposed methods provide some results, they are not sufficient to completely eliminate the interference fringe pattern that appears on images.

That is, in method (a), a large number of specific irregularities are provided on the surface of the support, and although the appearance of interference fringes due to the light scattering effect is somewhat prevented, the light scattering still remains. Because the specularly reflected light component remains,
In addition to the interference fringe pattern caused by the specularly reflected light remaining, the irradiation spot spreads due to the light scattering effect on the surface of the support, resulting in a substantial decrease in resolution.

Regarding method (b), complete absorption is not possible with black alumite treatment, and the reflected light on the support surface remains. In addition, when providing a colored pigment dispersed resin layer,
When forming the a-8i layer, a degassing phenomenon occurs from the resin layer,
The layer quality of the formed photoreceptive layer will deteriorate significantly, and the resin layer will be damaged by the plasma during the formation of the a-8i layer, reducing its original absorption function, and the subsequent a -8i layer formation is adversely affected.

Regarding method (c), for example, if we look at the incident light, a part of it is reflected on the surface of the photoreceptive layer and becomes reflected light,
The remainder enters the inside of the light-receiving layer and becomes transmitted light. At the surface of the support, part of the transmitted light is scattered and becomes diffused light, the rest is specularly reflected and becomes reflected light, and part of it becomes emitted light and exits to the outside. However, since the emitted light is a component that interferes with the reflected light and remains in any case, the interference fringe pattern still does not disappear completely.

By the way, in order to prevent interference in this case, some attempts have been made to increase the diffusivity of the surface of the support so that multiple reflections do not occur within the photoreceptive layer, but such attempts instead cause light to be absorbed within the photoreceptive layer. The image is diffused, causing rays and rays, which ultimately results in a decrease in resolution.

In particular, in a light-receiving member with a multilayer structure, even if the surface of the support is irregularly roughened, the reflected light on the first layer surface, the reflected light on the second layer, and the specularly reflected light on the support surface are all affected. interfere, and an interference fringe pattern is produced according to the thickness of each layer of the light-receiving member. Therefore, in a multilayer light-receiving member, it is impossible to completely prevent interference fringes by irregularly roughening the surface of the support.

Furthermore, when the surface of the support is irregularly roughened by methods such as sandblasting, the degree of roughness varies greatly between lots, and even within the same lot, the degree of roughness is uneven, making it difficult to manufacture. There are management issues. In addition, relatively large protrusions are often formed randomly, and such large protrusions cause local breakdown of the photoreceptive layer.

Furthermore, if the surface of the support is simply roughened regularly,
Since the light-receiving layer is deposited along the uneven shape of the surface of the support, the inclined surface of the unevenness of the support and the inclined surface of the unevenness of the light-receiving layer become parallel, and in that part, the incident light is directed to the bright area. Furthermore, since the thickness of the photoreceptive layer is non-uniform throughout the photoreceptive layer, a striped pattern of light and darkness appears. Therefore, simply by regularly roughening the surface of the support, it is not possible to completely prevent the occurrence of interference fringes.

Also, when a multilayered light-receiving layer is deposited on a support whose surface is regularly roughened, specular reflection light on the support surface and
In addition to the interference with the reflected light on the surface of the light-receiving layer, there is also interference due to the reflected light at the interface between each layer, so that the degree of interference fringe pattern development becomes more complicated than that of a light-receiving member with a single-layer structure.

[Purpose of the invention]

The object of the present invention is to eliminate the above-mentioned problems and to provide a light-receiving member having a light-receiving layer mainly composed of a-8i, which satisfies various demands.

That is, the main object of the present invention is to have electrical, optical, and photoconductive properties that are virtually always stable without depending on the usage environment, have excellent resistance to light fatigue, and have excellent resistance to light fatigue during repeated use. We have developed a photoreceptive member having a photoreceptive layer composed of a-3i, which does not cause any deterioration phenomenon, has excellent durability and moisture resistance, has no or almost no observed residual potential, and is easy to manage in production. It is about providing.

Another object of the present invention is to provide a light-receiving member having a light-receiving layer made of a-8i, which has high photosensitivity in the entire visible light range, has excellent matching properties with semiconductor lasers, and has a fast photoresponse. It is about providing.

Still another object of the present invention is to provide a light-receiving member having a light-receiving layer made of a-8i, which has high photosensitivity, high signal-to-noise ratio characteristics, and high electrical voltage resistance.

Another object of the present invention is to have excellent adhesion between a layer provided on a support and the support and between each layer of laminated layers,
A-
An object of the present invention is to provide a light-receiving member having a light-receiving layer made of 8i.

Still another object of the present invention is that it is suitable for image formation using coherent monochromatic light, that even after long-term repeated use, interference fringes and spots do not appear during reversal development, and that the image A light-receiving member having a light-receiving layer made of a-8i is capable of obtaining high-quality images with no defects or blurred images, high density, clear halftones, and high resolution. The goal is to provide.

[Structure of the invention]

The present inventors have conducted extensive research to overcome the above-mentioned problems with conventional light-receiving members and achieve the above-mentioned objectives, and as a result, have obtained the following knowledge, and based on this knowledge, the present invention has been developed. I was able to complete it.

That is, the present invention provides a first layer made of an amorphous material containing silicon atoms and at least one of germanium atoms and tin atoms, and a second layer having an antireflection function, on a support. A light-receiving member comprising a light-receiving layer having a layer, wherein the surface of the support has an uneven shape formed by a plurality of spherical trace depressions, and a plurality of fine irregularities within the spherical trace depressions. The present invention relates to a light receiving member having a shape.

By the way, the findings obtained by the present inventors as a result of extensive research are summarized as follows: In a light-receiving member having a plurality of layers on a support, the surface of the support is provided with irregularities formed by a plurality of spherical trace depressions, Furthermore, by providing a plurality of finer uneven shapes within the spherical trace recess, the problem of interference fringes that appear during image formation can be significantly resolved.

This knowledge is based on facts obtained through various experiments conducted by the present inventors.

This will be explained below using drawings to facilitate understanding.

FIG. 1 is a schematic diagram showing the layer structure of a light-receiving member 100 according to the present invention, which has an uneven shape formed by a plurality of minute spherical trace depressions, and further includes a plurality of microscopic trace depressions within the spherical trace depressions. A light-receiving member is shown in which a light-receiving layer consisting of a first layer 102 and a second layer 103 is provided on a support 101 having an uneven shape and along the slope of the unevenness.

FIGS. 2 and 4 are diagrams for explaining how the problem of interference fringes is solved in the light-receiving member of the present invention.

FIG. 3 is an enlarged view of a part of a conventional light-receiving member in which a multi-layered light-receiving layer is deposited on a support whose surface is regularly roughened. In the figure, 301 indicates the first layer, 302 the second layer, 303 the free surface, and 304 the interface between the first layer and the second layer. As shown in Fig. 3, when the surface of the support is simply roughened regularly by means such as cutting, the light-receiving layer is usually formed along the uneven shape of the surface of the support. The sloped surface of the unevenness on the body surface and the sloped surface of the unevenness on the photoreceptive layer are in a parallel relationship.

Due to this, for example, the photoreceptive layer is the first layer 301.
In a light-receiving member having a multilayer structure consisting of two layers, ie, a first layer and a second layer 3α2, the following problems regularly arise, for example.゛That is, since the interface 304 between the first layer and the second layer and the free surface 303 are in a parallel relationship, the reflected light R1 at the interface 304 and the reflected light R1 at the free surface
2 and 2, and interference fringes are generated depending on the layer thickness of the second layer.

FIG. 2 is an enlarged view of a part of a light-receiving member in which a multi-layered light-receiving layer is deposited on a support having an uneven shape formed by a plurality of spherical trace depressions. In the figure, 2
01 is the first layer, 202 is the second layer, 203 is the free surface, and 204 is the interface between the first layer and the second layer. As shown in FIG. 2, when the surface of the support is provided with an uneven shape formed by a plurality of minute spherical trace depressions, the light-receiving layer provided on the support is deposited along the uneven shape, so that the first The interface 20 between the layer 201 and the second layer 202
4 and the free surface 203 are each formed into an uneven shape with spherical trace depressions along the uneven shape of the support surface. The curvature of the spherical trace depression formed at the interface 204 is R
1% The curvature of the spherical trace depression formed on the free surface is R2
Then, R1 and R2 become R+ΦR2, so the reflected light at the interface 204 and the reflected light at the free surface 203 are:
Each has a different reflection angle, i.e. θ1 in FIG.
8θ2 is θlΦθ2, the direction is different, and the second
Using tl + t2 and Z3 shown in the figure, tl + t2-
Since the wavelength shift represented by t3 is not constant but changes, air ring interference corresponding to the so-called Newton's ring phenomenon occurs, and the interference fringes are dispersed within the depression. As a result, even if interference fringes appear microscopically in the image appearing through such a light-receiving member, they are not visible to the naked eye.

In other words, the use of a support having such a surface shape is for a light-receiving member having a multi-layered light-receiving layer formed thereon, and the light that has passed through the light-receiving layer is transmitted to the layer interface and the support. Reflection on the surface and their interference effectively prevent the formed image from having a striped pattern, leading to a light-receiving member capable of forming an excellent image.

FIG. 4 is an enlarged view of a part of the support surface in the light-receiving member of the present invention shown in FIG.

As shown in FIG. 4, the surface of the support in the light-receiving member of the present invention has further minute irregularities or a group of irregularities 402 formed on a part or the entire surface within the spherical trace recess 401. When such finer asperities or a group of asperities 402 are provided, in addition to the interference prevention effect described using FIG. The occurrence of patterns is more reliably prevented.

By the way, in the prior art, as described above, the surface of the support is randomly roughened to cause diffused reflection and to prevent the occurrence of interference fringes.

However, in such a case, not only is it not possible to obtain a sufficient effect of preventing the occurrence of interference fringes, but also problems arise when cleaning is performed using, for example, a blade after image transfer. That is, the surface of the photoreceptive layer is
Because unevenness occurs along the unevenness provided on the support,
The blade mainly hits the convex and convex portions of the light-receiving layer, resulting in poor cleaning performance and increased abrasion between the convex portions of the photo-receiving layer and the surface of the blade, resulting in poor durability of both, which poses a problem.

On the other hand, in the light-receiving member of the present invention, the minute unevenness that causes the scattering effect is present in the spherical trace depression (recess), so that the blade comes into contact with the recess of the light-receiving layer during cleaning. This also has the advantage that no large load is applied to the blade or the surface of the photoreceptive layer.

Now, the curvature and width of the irregularities formed by the spherical trace depressions provided on the support surface of the light-receiving member of the present invention, and the height of the finer irregularities within the spherical trace depressions are determined in the light-receiving member of the present invention. This is important for efficiently obtaining the effect of preventing the occurrence of interference fringes. The present inventors have investigated the following points as a result of various experiments.

That is, the curvature of the uneven shape due to the spherical trace depression is expressed as R1 width is D
In this case, if the following formula is satisfied, 0.5 or more Newton rings due to shearing interference will exist in each trace depression. Furthermore, if the following formula: % formula % is satisfied, one or more Newton rings due to shearing interference will exist in each trace depression.

For this reason, it is desirable to disperse the interference fringes that occur throughout the light receiving member into each of the trace depressions in order to prevent the interference fringes from occurring in the light receiving member.

This is because the width of the image becomes relatively narrow, resulting in a situation where image unevenness and the like are likely to occur.

In addition, the width of the unevenness due to the trace depression is 500 mm
It is desirable that the thickness be about .mu.m, preferably 200 .mu.m or less, more preferably 100 .mu.m or less. If D exceeds 500 μm, image unevenness will easily occur and there is a risk that the resolution will be exceeded, and in such a case, it becomes difficult to obtain an efficient effect of preventing interference fringes.

The height of the minute irregularities formed within the spherical trace depression, that is, the surface roughness within the spherical trace depression r max fi, 05 to 20
Preferably, it is in the μm range. rmax is 0.5
If it is less than μm, a sufficient scattering effect cannot be obtained, and if it exceeds 20 μm, the minute irregularities in the spherical trace depressions become too sharp compared to the irregularities caused by the spherical trace depressions.
The trace depressions may no longer have a spherical shape, and the effect of preventing interference fringes from occurring cannot be obtained sufficiently. Moreover, it is not preferable because it increases the non-uniformity of the light-receiving layer provided on such a support, making image defects more likely to occur.

The light-receiving layer of the light-receiving member of the present invention provided on a support having a specific surface shape as described above consists of a first layer and a second layer, and the first layer is composed of silicon atoms and germanium. An amorphous material containing at least one of an atom or a tin atom, and more preferably at least one of a hydrogen atom and a halogen atom [hereinafter referred to as "a"
-8i (Ge, SnMH, X) Written as J. ],
Alternatively, a-8i(Ge,
Sn) (H, The second layer may have a multilayer structure, and particularly preferably has a charge injection blocking layer containing a substance that controls conductivity as one of its constituent layers.

Further, the second layer is made of at least one kind selected from inorganic fluorides, inorganic oxides, and inorganic sulfides, and exhibits an antireflection function.

Regarding the preparation of the light-receiving layer of the light-receiving member of the present invention, in order to efficiently achieve the above-mentioned object of the present invention, it is necessary to accurately control the layer thickness at an optical level. Vacuum deposition methods such as a method, a sputtering method, an ion blating method, etc. are usually used, but in addition to these methods, a photo CVD method, a thermal CVD method, etc. can also be used.

Hereinafter, the specific contents of the light receiving member of the present invention will be explained according to the illustrated examples, but the light receiving member of the present invention is not limited to these examples.

FIG. 1 is a diagram schematically showing the layer structure of the light-receiving member of the present invention, in which 100 is the light-receiving member, 101 is the support, 102 is the first layer, 103 indicates the second layer, and 104 indicates the free surface.

Support The support 101 in the light-receiving member of the present invention has a surface having irregularities smaller than the resolving power required for the light-receiving member, and the irregularities are due to a plurality of spherical trace depressions, Moreover, a plurality of even smaller irregularities are formed within the spherical trace depression.

Below, the shape of the surface of the support in the light-receiving member of the present invention and a preferred manufacturing example thereof will be explained with reference to FIGS. 4 and 5. The shape of the surface of the support in the light-receiving member of the present invention and its manufacturing method is not limited to these.

FIG. 4 schematically shows a typical example of the surface shape of the support in the light-receiving member of the present invention by partially enlarging a portion of its uneven shape.

In Fig. 4, 4 old is the support, 402 is the support surface, 4
03 indicates an uneven shape formed by a spherical trace depression, and 404 indicates an even finer uneven shape provided within the spherical trace depression.

Furthermore, FIG. 4 also shows an example of a preferable manufacturing method for obtaining the surface shape of the support, and 403' indicates a rigid sphere having minute irregularities 404' on the surface. By letting the rigid sphere 403' drop naturally from a predetermined height position from the support surface 402 and colliding with the support surface 402, an uneven shape 403 is formed by a spherical trace depression having a minute unevenness shape 404 in the depression. Showing scales. Then, a rigid sphere 403' with approximately the same diameter R'
By using a plurality of and dropping them simultaneously or sequentially from the same height h, on the support surface 402,
A plurality of spherical trace depressions 403 having approximately the same curvature R and approximately the same width can be formed.

FIG. 5 shows some typical examples of supports having an uneven shape formed by a plurality of spherical trace depressions on the surface as described above. In the figure, 501 is a support;
Reference numeral 502 denotes the surface of the support, and 503 indicates a spherical trace depression having a plurality of finer uneven shapes within the hollow (note that the plurality of finer uneven shapes formed within the spherical trace depression are not shown in FIG. 5). (However, it is assumed that each of the spherical trace depressions 503 has a more minute uneven shape.), 5
03' is a rigid sphere having a minute unevenness on its surface (Similarly, although the minute unevenness on the surface is not shown, it is assumed that the surface of the rigid sphere has a minute unevenness. .) are shown respectively.

In the example shown in FIG. 5(A), the surface 502 of the support 501
A plurality of spheres 503' having approximately the same diameter are placed in different parts of the
, 503', . . . are regularly dropped from approximately the same height to produce a plurality of trace depressions 503, 503, . At the very least, the concave and convex shapes are formed regularly. In this case, the depressions 503 that overlap with each other
, 503, . . ., it is necessary to allow the spheres 503', 503', . Not even.

Further, in the example shown in FIG. 5(B), two types of spheres 503', 503', . . . having different diameters are dropped from approximately the same height or different heights, and
A plurality of depressions 503 , 503 , . . . having two types of curvature and two types of width are formed on the surface 502 of It was formed.

Furthermore, in the example shown in FIG. 5(C) (a front view and a sectional view of the surface of the support), a plurality of spheres 503' and 503' having approximately the same diameter are provided on the surface 502 of the support 501.

... are irregularly dropped from approximately the same height, and a plurality of depressions 503 having approximately the same curvature and multiple types of widths,
503, . . . are formed so as to overlap with each other to form irregular irregularities.

As described above, in order to form an uneven shape by spherical trace depressions on the surface of the support of the light-receiving member of the present invention, and to form a plurality of finer uneven shapes within the spherical trace depressions, A preferred example is a method in which a rigid sphere with minute irregularities is dropped onto the surface of a support. By appropriately selecting various conditions such as the shape and size of the surface irregularities or the amount of rigid spheres to be dropped, a spherical trace depression having a desired average curvature and average width can be formed on the support surface, or within the spherical trace depression. It is possible to form irregularities of a desired size and shape at a predetermined density. That is, by selecting the above conditions, it is possible to control the height and pitch of the unevenness formed on the surface of the support, or the height and pitch of the unevenness of even minute unevenness formed in the concave part of the unevenness. It is possible to freely adjust the pitch etc. according to the purpose, and it is possible to obtain a support having a desired uneven shape.

In order to make the support of the light-receiving member have an uneven surface, a method has been proposed in which cutting is performed using a diamond cutting tool using a lathe, milling machine, etc., and although this is a reasonably effective method, In this method, it is essential to use cutting oil, remove chips that are inevitably generated by cutting, and remove cutting oil that remains on the cutting surface. However, in the present invention, since the uneven surface shape of the support is formed by spherical trace depressions as described above, the above-mentioned problems can be completely eliminated and the support with the desired uneven surface can be obtained. It can be created efficiently and easily.

The support 101 used in the present invention may be electrically conductive or electrically insulating. As the conductive support, for example, N11 (:r, stainless steel, At
, Crs MO% AuXNb% TaXV.

Examples include metals such as Ti, PT, and PB, and alloys thereof.

Examples of the electrically insulating support include polyester, polyethylene, polycarbonate, cellulose, acetate, polypropylene, polysalt f-vinyl, polyvinylidene chloride,
Examples include films or sheets of synthetic resins such as polystyrene and polyamide, glass, ceramics, and paper. These J4 Q.

Preferably, at least one surface of the insulating support is conductively treated, and a light-receiving layer is provided on the conductively treated surface side.

For example, if it is glass, NiCr is applied to its surface.

AJa, Crs MOXAu, Ir, Nbs T
a, v, TiXPt'iPd, InzO3,5
Conductivity can be imparted by providing a thin film made of nOz, ITO (InzO3+5nOz'), etc., or if it is a synthetic resin film such as a polyester film,
NiCr% AtXAg% Pb% ZnXNi%Au
s CrXMo, IrXNb, Tas V, Tt
% Pt or other metal thin film by vacuum evaporation, electron beam evaporation,
Conductivity is imparted to the surface by sputtering or the like, or by laminating the surface with the metal. The shape of the support can be any shape such as a cylinder, a belt, a plate, etc., and the shape can be determined as appropriate depending on the purpose and desire. For example, if the light-receiving member 100 of FIG. 1 is used as an electrophotographic image forming member, it is preferable to use an endless belt or a cylindrical shape for continuous high-speed copying. The thickness of the support is appropriately determined so as to form a desired light-receiving member, but if flexibility is required as a light-receiving member, the thickness should be determined within a range that allows the support to fully perform its function. can be made as thin as possible. However, in terms of manufacturing and handling of the support, mechanical strength, etc., usually 1
It is assumed to be 0 μ or more.

Next, when the light-receiving member of the present invention is used as a light-receiving member for electrophotography, an example of an apparatus for manufacturing the surface of the support will be explained with reference to FIGS. 6(A) and 6(B). However, the present invention is not limited thereto.

As a support for a light-receiving member for electrophotography, an aluminum alloy or the like is subjected to ordinary extrusion processing to form a boathole tube or mandrel tube, and the drawn tube obtained by further drawing processing is subjected to heat treatment and conditioning as necessary. A cylindrical (cylinder-shaped) substrate that has been subjected to a treatment such as quality is used, and a sixth (cylindrical) substrate is applied to the cylindrical substrate.
A).

(B) Using the manufacturing apparatus shown in the figure, an uneven shape is formed on the surface of the support.

Examples of the spheres used to form the above-mentioned uneven shape on the surface of the support include various rigid spheres made of metals such as stainless steel, aluminum, steel, nickel, and brass, ceramics, and plastics. Rigid spheres made of stainless steel or steel are desirable for reasons such as low cost and cost reduction. The hardness of such a rigid sphere may be higher or lower than the hardness of the support, but if the sphere is to be used repeatedly, it is preferably higher than the hardness of the support.

In order to form the above-mentioned specific shape on the surface of the support of the present invention, it is necessary to use various types of rigid spheres having an uneven surface as described above. Methods that apply plastic processing such as embossing and corrugation, methods that form unevenness by mechanical processing such as roughening methods such as surface roughening method (Nashiji method), and chemical processing such as etching with acid or alkali. It can be produced by processing a rigid sphere using a method of forming unevenness by a method. Furthermore, on the surface of the rigid sphere with the unevenness formed in this way, electrolytic polishing, chemical polishing, finish polishing, etc., or anodic oxidation film formation, chemical film formation, plating, waxing, painting, vapor deposition film formation, or film formation by CVD method. Surface treatment such as formation can be performed to adjust the uneven shape (height), hardness, etc. as appropriate.

FIGS. 6A and 6B are schematic cross-sectional views for explaining an example of the manufacturing apparatus.

In the figure, 601 is an aluminum cylinder for making a support, and the surface of the cylinder 601 may be finished in advance to an appropriate degree of smoothness.

The cylinder 601 is supported by a rotating shaft 602,
It is driven by a suitable driving means 603 such as a motor, and is rotatable about its axis.

Reference numeral 604 denotes a rotating container that is supported by a bearing 602 and rotates in the same direction as the cylinder 601. Inside the container 604, there are many rigid spheres 605 having an uneven surface.
is accommodated. The rigid sphere 605 is supported by a plurality of protruding lips 606 provided on the inner wall of the rotating container 604, and is transported to the upper part of the container by the rotation of the rotating container 604. When the rotational speed of the rotating container is at a certain appropriate speed, the rigid sphere 605 that has been transported along the container wall to the top of the container falls onto the cylinder 601, collides with the cylinder surface, and forms a trace depression on the surface.

Incidentally, holes are uniformly bored in the wall of the rotating container 604, and cleaning liquid is sprayed from a shower pipe 607 provided outside the container 604 when the container 604 is rotated, so that the cylinder 601, the rigid sphere 605, and the rotating container 604 can be cleaned. You can also make it look like this. In this case, it is not necessary to wash out the dust and the like that have adhered due to static electricity caused by contact between the rigid spheres or between the rigid sphere and the rotary vessel to the outside of the rotary vessel 604. can form a body. It is necessary to use a cleaning liquid that does not cause uneven drying or dripping, and for this reason, it is preferable to use a nonvolatile substance alone or a mixture with a cleaning liquid such as trichloroethane or trichloroethylene.

Light-receiving layer 1st layer In the light-receiving member of the present invention, a first layer 102 is provided on the above-mentioned support 101, and the first layer 102 is composed of silicon atoms, germanium atoms, or tin atoms. and preferably at least one of a hydrogen atom or a halogen atom, and further contains at least one selected from an oxygen atom, a carbon atom, and a nitrogen atom. You can force it. Furthermore, the second layer can contain a substance that controls conductivity, if necessary, and includes a charge injection blocking layer and/or a charge injection blocking layer containing a relatively large amount of the substance that controls conductivity. Alternatively, it is desirable to have a barrier layer at the end on the support side.

Specific examples of the halogen atoms contained in the first layer of the present invention include fluorine, chlorine, bromine, and iodine, with fluorine and chlorine being particularly preferred.

The amount of hydrogen atoms (H) contained in the first layer, the amount of halogen atoms (X), or the sum of the amounts of hydrogen atoms and... halogen atoms (H x X) is preferably 0, O1 ~ 40 at
omic%, preferably 0.05 to 30 atoms
c%, most preferably 0.1 to 25 atomic%.

Further, in the present invention, the layer thickness of the first layer is one of the important factors for efficiently achieving the object of the present invention,
In order to give the light-receiving member desired characteristics, it is necessary to pay sufficient attention when designing the light-receiving member, and the thickness is usually 1 to 100μ, preferably 1 to 80μ, more preferably 2 ~50μ.

By the way, the purpose of containing germanium atoms and/or tin atoms in the first layer of the light-receiving member of the present invention is mainly to improve the absorption spectrum characteristics of the light-receiving member on the long wavelength side.

That is, by containing germanium atoms and/or tin atoms in the first layer, the light-receiving member of the present invention exhibits various excellent properties, especially when it comes to visible light. It has excellent photosensitivity and fast photoresponsiveness to light of all wavelengths from relatively short wavelengths to relatively short wavelengths. This is particularly noticeable when a semiconductor laser is used as a light source.

In the first layer of the present invention, germanium atoms and/or tin atoms are contained in the entire layer region of the first layer in a uniform distribution state or in a non-uniform distribution state.

(Here, the uniform distribution state refers to germanium atoms or/
It means that the distribution concentration of tin atoms is uniform in the plane direction parallel to the support surface of the first layer, and is also uniform in the layer thickness direction of the first layer. What is the condition?
Although the distribution concentration of germanium atoms and/or tin atoms is uniform in the plane direction parallel to the support surface of the first layer,
This means that the first layer is non-uniform in the layer thickness direction. ) In the first layer of the present invention, a layer containing relatively large amounts of germanium atoms and/or tin atoms in a uniform distribution is provided particularly at the end on the support side, or a layer containing a relatively large amount of germanium atoms and/or tin atoms in a uniform distribution is provided, or It is desirable to contain germanium atoms and/or tin atoms so that they are more distributed toward the support side. By doing so, when a long wavelength light source such as a semiconductor laser is used, the long wavelength light that can hardly be absorbed by the constituent layers or layer regions close to the free surface side of the photoreceptive layer can be absorbed by the photoreceptor layer. Since the light is absorbed substantially completely in the constituent layers or layer regions in contact with the support, interference due to reflected light from the support surface is prevented.

As mentioned above, in the first layer of the present invention, germanium atoms and/or tin atoms can be uniformly distributed throughout the entire layer, or can be continuously and non-uniformly distributed in the layer thickness direction. , Hereinafter, some typical examples of the distribution state in the layer thickness direction will be explained using germanium atoms as an example.
This will be explained with reference to FIGS.

7 to 15, the horizontal axis shows the distribution concentration C of germanium atoms, the vertical axis shows the layer thickness of the first layer, and tB
indicates the position of the end surface of the first layer on the side of the support, and tT indicates the position of the end surface of the second layer on the side opposite to the support. That is, the first layer containing germanium atoms is heated from the tB side to the tT side.
Layering occurs laterally.

In addition, in each figure, the layer thickness and concentration are shown in an extreme form because if the values are shown as they are, the differences between each figure will not be clear, and these figures are only used to facilitate understanding. This is a schematic diagram for explanation.

FIG. 7 shows a first typical example of the distribution state of germanium atoms contained in the first layer in the layer thickness direction.

In the example shown in FIG. 7, the distribution concentration C of germanium atoms is up to a position 11 from the interface position tB where the first layer is formed and the surface of the support where the first layer containing germanium atoms is formed. Germanium atoms are contained in the first layer while taking a constant value of concentration C1, and from position t1, the concentration is gradually and continuously decreased from C2 to interface position tT. At position tT, the distribution concentration C of germanium atoms is substantially zero.

(Here, substantially zero means that the amount is less than the detection limit.

) In the example shown in FIG. 8, the distribution concentration C of the contained germanium atoms gradually and continuously decreases from the concentration C3 from the position iff tn to the position tT, and reaches the concentration C4 at the position tT. It forms a distribution state.

In the case of FIG. 9, from position tB to position t2, the distribution concentration C of germanium atoms is constant at the concentration C5, and gradually and continuously decreases between position t2 and position tT. At tT, the distribution concentration Crfi is substantially zero.

In the case of FIG. 10, the distribution concentration C of germanium atoms is gradually and continuously reduced from the position tn to the position tT, starting from the concentration C6, and rapidly and continuously decreasing from the position t3 until the position tTK. i- is substantially zero.

In the example shown in FIG. 11, the distribution concentration C of germanium atoms is a constant value of concentration C7 between the position tB and the position t4, and the distribution concentration C is zero at the position tT. Ru. Between position t4 and position tT, the distribution density C is linearly decreased from position t4 to position tT.

In the example shown in FIG. 12, the distribution concentration C is at the position t
From a to multiple position t5, the density c8 is constant, and at position t
The distribution state is such that the concentration decreases in a linear function from the concentration C9 to the concentration C1o up to the multiple positions tT.

In the example shown in FIG. 13, from position tB to position tT, the distribution concentration C of germanium atoms is the concentration C1l.
It decreases more linearly and reaches zero.

In FIG. 14, from position tB to position t6, the distribution concentration C of germanium atoms decreases linearly from concentration C12 to concentration CI3, and from position t6 to position t
An example is shown in which the concentration C13 is kept at a constant value between C13 and T.

In the example shown in FIG. 15, the distribution concentration C of germanium atoms is a concentration C14 at a position tB, and this concentration C14 is slowly decreased at first until reaching a position t7, and near the position t7, It is rapidly decreased to a concentration C15 at position t7.

Between position t7 and position t8, the decrease is rapid at first, and then slowly and gradually decreased until position t8.
The concentration becomes CtS, and between position t8 and position t9,
The concentration is gradually decreased to reach the concentration C17 at position t9. Between position t9 and position tT, the concentration is reduced from C17 to substantially zero according to a curve shaped as shown in the figure.

As described above with reference to FIGS. 7 to 15, some typical examples of the distribution state of germanium atoms and/or tin atoms contained in the first layer in the layer thickness direction, the optical In the receiving member, on the support side, there is a part where the distribution concentration C of germanium atoms and/or tin atoms is high, and on the end surface tT side, there is a part where the distribution concentration C is considerably lower than on the support side. It is desirable that the first layer has a distribution of germanium atoms and/or tin atoms.

That is, the first layer constituting the light-receiving member of the present invention preferably has a localized region containing germanium atoms and/or tin atoms at a relatively high concentration on the support side, as described above. is desirable.

In the light-receiving member of the present invention, the localized region can be explained using the symbols shown in FIGS.
It is more desirable that the distance be within 5μ.

The localized region may be the entire layer region up to 5 μm thick from the interface position tB, or may be a part of the layer region.

Whether the localized area is a part or all of the layer area is determined by
It is determined as appropriate according to the characteristics required of the photoreceptive layer to be formed.

The localized region contains germanium atoms or/
And as for the distribution state of tin atoms in the layer thickness direction, the maximum value Cmax of the distribution concentration of germanium atoms and/or tin atoms is preferably 1000 atoms with respect to silicon atoms.
ic ppm or more, more preferably 5000 atoms
c ppm or more, optimally 1×10+atomic p
It is desirable that the layers be formed in such a way that a distribution state of pm or more can be achieved.

That is, in the light-receiving member of the present invention, the first layer containing germanium atoms and/or tin atoms has a distributed concentration within 5 μm in layer thickness from the support side (layer region 5 μ thick from tB). It is preferable to form it so that a maximum value Cmax exists.

In the light-receiving member of the present invention, the content of germanium atoms and/or tin atoms contained in the first layer needs to be appropriately determined as desired so as to effectively achieve the object of the present invention. is 1~6 x 105105a
to ppm, preferably 10 to 3
105105ato ppm, more preferably IX
10-2 x 105105ato ppm.

Further, in the present invention, the layer thickness of the first layer is one of the important factors for efficiently achieving the object of the present invention,
In order to give the light-receiving member desired characteristics, it is necessary to pay sufficient attention when designing the light-receiving member, and the thickness is usually 1 to 100μ, preferably 1 to 80μ, more preferably 2 ~50μ.

The purpose of containing at least one kind selected from oxygen atoms, carbon atoms, and nitrogen atoms in the first layer of the light-receiving member of the present invention is mainly to increase the photosensitivity and dark resistance of the light-receiving member. Another advantage is improved adhesion between the support and the first layer.

In the first layer of the present invention, when at least one selected from oxygen atoms, carbon atoms, and nitrogen atoms is contained, it is contained in a uniform distribution state in the layer thickness direction, or in a uniform distribution state in the layer thickness direction. Whether or not it should be contained in a uniformly distributed state depends on the above-mentioned objectives and expected effects, and therefore the amount to be contained will also vary.

That is, when the purpose is to increase the photosensitivity and dark resistance of a light-receiving member, the carbon contained in the first layer is uniformly distributed over the entire layer area, and in this case, the carbon contained in the first layer is The amount of at least one selected from atoms, oxygen atoms, and nitrogen atoms may be relatively small.

In addition, when the purpose is to improve the adhesion between the support and the first layer, it may be contained uniformly in a part of the layer area of the support side end of the first layer, or At least one selected from carbon atoms, oxygen atoms, and nitrogen atoms is contained in a distribution state such that the distribution concentration of at least one selected from carbon atoms, oxygen atoms, and nitrogen atoms is high at the end of the layer on the side of the support; in this case, oxygen contained in the first layer The amount of at least one selected from atoms, carbon atoms, and nitrogen atoms is made relatively large in order to ensure improved adhesion to the support.

In the light-receiving member of the present invention, the amount of at least one selected from oxygen atoms, carbon atoms, and nitrogen atoms contained in the first layer is determined by the characteristics required for the first layer as described above. In addition to consideration of organic relationships such as the characteristics at the contact interface with the support, the
c%, preferably 0.002-40 atomic%,
Optimal H0,003 to 30 atomic%.

By the way, if it is contained in the entire layer area of the first layer, or if the proportion of the layer thickness of a part of the layer area to be contained in the layer thickness of the first layer is large, the above-mentioned amount to be contained is The upper limit will be lowered. That is, in that case, for example, the layer thickness of the layer region to be contained is usually 30 atomic% or less of the layer thickness of the first layer, preferably id 20
atomic% or less, optimally 10 atomic% or less.

Next, the amount of at least one selected from oxygen atoms, carbon atoms, and nitrogen atoms to be contained in the first layer of the present invention is relatively large on the support side, and from the end of the support side. It is distributed so that it decreases toward the end of the second layer side, and becomes a relatively small amount or substantially close to zero near the end of the first layer on the second layer side. Some typical examples are shown in Figures 16 to 24.
This will be explained using figures. However, the present invention is not limited to these examples. Hereinafter, at least one type selected from carbon atoms and oxygen atoms will be referred to as "atoms (0, C, N
) Written as J.

In Figures 16 to 24, the horizontal axis is atoms (0°C, N)
The vertical axis indicates the layer thickness of the first layer, tB indicates the position of the interface between the support and the first layer, and tT indicates the position of the interface between the first layer and the second layer. shows.

Figure 16 shows atoms (0, C,
A first typical example of the distribution state of N) in the layer thickness direction is shown. In this area, from the interface position tB between the first layer containing atoms (0, C, N) and the support, the position 1. Up to the atom (0
, C, N) takes a constant value CI, and from the position t1 to the interface position tT''! with the second layer, the atoms (0,
C, N) distribution concentration C continuously decreases from concentration C2,
At position tT, the distribution concentration of atoms (0, C, N) is 0
It becomes 3.

In another typical example shown in FIG. 17, the distribution concentration C of atoms (0, C, N) contained in the first layer is at the position tB
The concentration decreases continuously from C4 to position tT, and reaches C5 at position tT.

In the example shown in FIG. 18, the distribution concentration C of atoms (0, C, N) maintains a constant value of concentration C6 from position tB to position t2, and from position t2 to the position meter, the distribution concentration C of atoms (0, C, N) maintains a constant value of concentration C6.
c, N), o distribution concentration C! Ii concentration gradually decreases continuously from Ct, and at position tT atoms (0, C,
The distribution concentration C of N) becomes substantially zero.

In the example shown in FIG. 19, the distribution concentration C of atoms (0, C, N) gradually decreases continuously from the concentration C8 from position tB to position tT, and at position tT, atoms 1. c.
, N) is substantially zero.

In the example shown in FIG. 20, the distribution concentration C of atoms (0, C, N) is at a constant concentration C9 between position tB and position t3, and between position t3 and position t7,
The concentration decreases in a negative order number from the concentration C9 to the concentration C1o.

In the example shown in FIG. 21, the distribution concentration C of atoms (0, C, N) is the concentration C1l from position tB to position t4.
The concentration is at a constant value from position t4 to position tT, and decreases linearly from the concentration C12 to the concentration CtS.

In the example shown in FIG. 22, the distribution concentration C of atoms (0, C, N) decreases linearly from the concentration C14 to substantially zero from the position tB to the position tT.

In the example shown in FIG. 23, the distribution concentration C of atoms (0, C, N) decreases linearly from the position tB to the position t5, from the concentration 01s to the concentration C16, and
The concentration CtS is maintained at a constant value from to position tT.

Finally, in the example shown in FIG. 24, atoms (0, C.

The distribution concentration C of N) is concentration C17 at position tB, and distribution concentration C at position 1.N). From to position t6, the concentration initially decreases from CI7, then rapidly decreases near position t6, and reaches concentration CI8 at position tT. Next, from position t6 to position t7t, the concentration decreases rapidly at first, then slowly decreases, and at position t7, the concentration ci9
becomes. Further, the concentration gradually decreases extremely slowly between the positions t7 and t8, and reaches the concentration C2G at the position t8. Furthermore, from position t8 to position t7, the concentration gradually decreases from C2G to substantially zero.

As in the examples shown in FIGS. 16 to 24, the end of the first layer on the support side has a portion with a high distribution concentration C of atoms (0, C, N). At the end of the second layer,
If the distribution concentration C has a fairly low portion or a portion with a concentration substantially close to zero,
A localized region in which the distribution concentration of atoms (0, C, N) is relatively high is provided at the end of the first layer on the support side, preferably, the localized region is connected to the support surface and the first layer. By providing the first layer within 5 μm from the interface position tB with the first layer, it is possible to more efficiently improve the adhesion between the support and the first layer.

The localized region may be all or a part of the layer region at the end of the first layer on the support side that contains atoms (0, C, N); The decision as to whether to do so or not is determined as appropriate depending on the properties required of the first layer to be formed.

The amount of atoms (0, C, N) contained in the localized region is such that the maximum molecular concentration C of atoms (0, C, N) is 500 at
omic ppm or more, preferably 800 atomic
cppm or more, optimally 1000 atomic ppm
It is desirable to have a distribution state in which the number is m or more.

Furthermore, in the light-receiving member of the present invention, a substance for controlling conductivity may be contained in the first layer in a uniform or non-uniform distribution state in the entire layer region or a part of the layer region, if necessary. can.

Examples of the substance that controls conductivity include so-called impurities in the semiconductor field, such as atoms belonging to group Ⅰ of the periodic table (hereinafter simply referred to as ``mth'') that give P-type conductivity.
"group atoms". ), or an atom belonging to Group V of the periodic table (hereinafter simply referred to as "Group I atom") that provides n-type conductivity. Specifically, as group Ⅰ atoms,
Examples include B (boron), p, t (aluminum), Ga (gallium), In (indium), and Tt (thallium), but particularly preferred are 8% Q
It is a. In addition, as group V atoms, P (phosphorus), As
(arsenic), Sb (antimony), Bi (pisma), etc., but particularly preferred are p, s
It is b.

When the first layer of the present invention contains a group II atom or atom or a group V atom, which is a substance that controls conductivity, it may be contained in the entire layer region, or it may be contained in a part of the layer region. As will be described later, they differ depending on the purpose or expected effect, and the circumstances in which they are included will also differ.

That is, when the main purpose is to control the conductivity type and/or conductivity of the first layer, it is contained in the entire layer area of the photoreceptive layer. The content of atoms may be relatively small, usually I x 10
~I x 10 atomic ppm, preferably 5 x 10 ~ 5 x 10" atomic ppm
, optimally I x 10""' ~ 2 x 102
It is 102ato ppm.

In addition, the group (I) atoms or the group (V) atoms may be contained in a uniform distribution state in a part of the layer region in contact with the support, or the distribution concentration of the group (I) or group (IV) atoms in the layer thickness direction may be When it is contained at a high concentration on the side in contact with the support, the group (III) atoms, the constituent layers containing the group (III) atoms, or the layer regions containing the group (III) atoms at a high concentration are free from charge injection. It functions as a blocking layer.

In other words, when the group Ⅰ atoms are contained, when the free surface of the photoreceptive layer is subjected to polar charging treatment, the movement of electrons injected from the support side into the photoreceptor layer becomes more efficient. In addition, when the group (III) atoms are contained, when the free surface of the photoreceptive layer is charged to O polarity, it is injected from the support side into the photoreceptor layer. The movement of holes can be more efficiently blocked.

In such cases, the content is relatively large,
Specifically, 30-5 X IQ' atomic p
p.m.

Preferably 50-I x 10' atomic pp
m, optimally I x 10" ~ 5 x IQ3ato
mic ppm. Furthermore, in order to efficiently exhibit the effect as the charge injection blocking layer, the layer thickness of the layer or layer region provided at the end portion on the side of the support containing group (I) atoms is t, and the layer thickness of the photoreceptive layer is t. When the thickness is T, t/T≦0.
It is desirable that the relationship 4 holds, and more preferably the value of the relational expression is 0.35 or less, most preferably 013 or less. In addition, the layer thickness t of the layer or layer region is generally 3 x 10-3 to 10μ,
Preferably 4 x 10-8μ, optimally 5 x 10-3
It is desirable to set it to ~5μ.

The amount of group (III) atoms or group (III) atoms contained in the first layer is relatively large on the support side, decreases from the support side toward the second layer side, and decreases from the support side toward the second layer side. A typical example of distributing Group II atoms or Group V atoms so that the amount is relatively small or substantially zero near the end face of the oxygen The present invention can be explained using examples similar to those shown in FIGS. 16 to 24, which are exemplified in the case of containing at least one of atoms, carbon atoms, and nitrogen atoms, but the present invention is limited by these examples. It's not a thing.

As shown in the examples shown in FIGS. 16 to 24, the first layer has a portion with a high distribution of group Ⅰ atoms or group Ⅰ atoms with a high degree C on the side closer to the support, and the second layer On the side of the layer near the second layer, if the distribution concentration C has a portion with a considerably low concentration or a portion with a concentration substantially close to zero, the group By providing a localized region where the distribution concentration of atoms or group (III) atoms is relatively high, preferably by providing the localized region within 5 μm from the interface position in contact with the support surface, The above-mentioned effect that the layer region in which the distribution concentration of group atoms or group V atoms is high forms a charge injection blocking layer is more effectively achieved.

As described above, it is also possible to have a distribution state of Group (1) atoms or Group (2) atoms. The material constituting such a barrier layer is kL
Examples include inorganic electrically insulating materials such as 203.8102, Si:+Na, and organic electrically insulating materials such as polycarbonate.

Next, a method for forming the first layer in the present invention will be explained.

The amorphous material constituting the first layer in the present invention is formed by a vacuum deposition method that utilizes a discharge phenomenon such as a glow discharge method, a sputtering method, or an ion blasting method. These manufacturing methods are selected and adopted as appropriate depending on factors such as manufacturing conditions, level of equipment capital investment, manufacturing scale, and desired characteristics of the light-receiving member to be manufactured. The glow discharge method or the sputtering method is preferable because it is relatively easy to control the conditions for manufacturing the receiving member, and carbon atoms and hydrogen atoms can be easily introduced together with silicon atoms. be. Further, the glow discharge method and the sputtering method may be used together in the same apparatus system.

Although the effects of each of these have been described individually, in order to obtain a light-receiving member having characteristics that can achieve the desired purpose, the distribution state of these group (III) atoms or group (III) atoms and the first layer It goes without saying that the amounts of Group I atoms or Group V atoms to be contained may be appropriately combined as necessary. For example, when a charge injection blocking layer is provided at the end of the first layer on the support side, a substance that controls conductivity contained in the charge injection blocking layer is added to the first layer other than the charge injection blocking layer. A substance that controls conductivity of a polarity different from the polarity may be contained, or a substance that controls conductivity of the same polarity may be contained in a much smaller amount than that contained in the charge injection blocking layer. It may also be included.

Furthermore, in the light-receiving member of the present invention, as a constituent layer provided at the end on the support side, instead of the charge injection blocking layer,
It is also possible to provide a so-called barrier layer made of an electrically insulating material, or alternatively, both the barrier layer and the charge injection blocking layer are formed by forming a-5iGe (H,
In order to form the first layer composed of Hydrogen atom (H) or/and... Rogen atom (X)
Hydrogen atoms (H) and/or halogen atoms (
X) A raw material gas for supply is introduced at a desired gas pressure into a deposition chamber whose interior can be reduced in pressure, and a glow discharge is generated within the deposition chamber, and the surface of a predetermined support that has been previously installed at a predetermined position is A layer composed of a-5iGe (H,X) is formed on top.

The substance that can serve as the raw material gas for supplying Si is S.
Gaseous or gasifiable silicon hydride (silanes) such as iH*, Si2H4, 513Hs, and 5i4Hto can be mentioned. In particular, SiH4 and Si2H4 are preferred.

In addition, substances that can be the source gas for supplying Ge include GeH4, Ge2H6, Ge3Hs, Ge<H+o
sGesH1zs G'l'5H14XGe7Htss
Germanium hydride in a gaseous state or capable of being gasified can be used, such as Ge5Htss Ge9H2G. In particular, GeH4, Qe 2H6, and Ge3H8
is preferred.

Furthermore, there are many halogen compounds as substances that can be used as the raw material gas for supplying halogen atoms, such as halogen gases, halides, interhalogen compounds, halogen-substituted silane derivatives, and other gaseous or gaseous substances. It is possible to use a halogen compound that can be converted into Specifically, halogen gases such as fluorine, chlorine, bromine, and iodine, BrF
% CtF 5CtF3, BrF3, BrF5, IF
3. Interlogen compounds such as IF7 and ICtsIBr,
and SiF4, Si2F6.5ICt4.5tBr4
Preferred examples include silicon halides such as .

When a gaseous silicon compound containing a halogen atom or one that can be gasified as described above is formed by a glow discharge method as a raw material gas, silicon hydride gas is not used as a raw material gas for supplying Si atoms. This is particularly effective since it is possible to form a layer composed of a-8i containing halogen atoms on a predetermined support.

When forming the first layer using the glow discharge method, basically silicon halide is used as a raw material gas for supplying Si, germanium hydride is used as a raw material for supplying Ge, and Ar
, H2, He, etc. are introduced into the deposition chamber at a predetermined mixing ratio and gas flow rate, and a glow discharge is generated to form a plasma atmosphere of these gases.
In order to make it easier to control the content of hydrogen atoms (H), which forms the first layer on the support and is extremely effective in controlling electrical or photoelectric properties. Alternatively, a raw material gas for supplying hydrogen atoms may be further mixed with these gases. As the gas for supplying hydrogen atoms, hydrogen gas or SiH4,5i2Hs,5
Silicon hydride gas such as i3Hs, 5i4Hto, etc. is used. In addition, HFXHC is used as a gas for supplying hydrogen atoms.
Halides such as LXHBr, HI, 5iH2Fz,
5iH2I2.5IHzCt2.5iHC43,5iH
When using a gaseous or gasifiable substance such as no-rogen-substituted silicon hydride such as zBrz, 5iHBrs, etc., hydrogen atoms (
H) is also introduced, so it is effective.

To form the first layer composed of a-3iGe (H, This is done by sputtering in a desired gas atmosphere.

When forming the first layer using the ion blating method, for example, polycrystalline silicon or single-crystal silicon and polycrystalline germanium or single-crystal germanium are housed in a deposition boat as evaporation sources, respectively, and the evaporation sources are This can be accomplished by heating and evaporating the evaporated material using a resistance heating method or an electron beam method (E, B method), etc., and passing the flying evaporated material through a desired gas plasma atmosphere.

In both the sputtering method and the ion blasting method, in order to contain halogen atoms in the layer to be formed, a gas of the aforementioned halogenide or a silicon compound containing halogen atoms is introduced into the deposition chamber. Then, a plasma atmosphere of the gas may be formed. In addition, when introducing hydrogen atoms, a raw material gas for supplying hydrogen atoms, such as H4 or the above-mentioned gases such as hydrogenated silanes and/or germanium hydride, is introduced into the deposition chamber for sputtering. What is necessary is to form a plasma atmosphere of the following gases. Furthermore, as the raw material gas for supplying halogen atoms, the above-mentioned halides or halogen-containing silicon compounds are listed as effective, but in addition, I(F).

Tin halide such as HCtXHBr, HI, 5iHz
Fz, 5jHzIz, 5iH2C22, 5iHC43,
Halogen-substituted silicon hydrides such as 5iHzBr2.5iHBr3, and GeHF3, GeHCl5, GeH3F
% GeHCl5, GeHzCLz, GeH3Ct%
GeHBr3, GeHzBrz, GeHCl5 s G
hydrogenation of eHI+, GeHzIz, GeH3I, etc.), germanium rogenide, etc., GeF4, GaCl2, GeB
r4, GeI4, GeFz, GeCLt, GeBrz,
Gaseous or gasified materials such as kermanium halides such as GeI2 can also be used as effective starting materials.

In a preferred example of the present invention, the amount of hydrogen atoms (H) contained in the first layer to be formed or the amount of hydrogen atoms (X
) or the sum of the amounts of hydrogen atoms and halogen atoms (H+X)
is preferably 0.01 to 40 atomic %, more preferably 0.05 to 30 atomic %, and optimally 0.1 to 25 atomic %.

A first layer composed of amorphous silicon containing tin atoms (hereinafter referred to as "a-8iSn(H, To form a
-5iGe (H;
n) By using it in place of the starting material for supply and incorporating it in the layer to be formed in a controlled amount.

Substances that can serve as raw material gas for supplying tin atoms (Sn) include tin hydride (SnH4), 5nFz, 5nF
4, S'rLCL2.5nC14,5n13r2, Sn
Gaseous or gasifiable tin halides such as Br4, SnI2, SnI4, etc. can be used.
・When using tin rogenide, ・
- It is particularly effective because it can form a layer composed of a-8i containing rogen atoms. Among them, 5nC1< is preferable from the viewpoint of ease of handling during layer formation work and good Sn supply efficiency.

When 5nC24 is used as a starting material for supplying tin atoms (Sn), in order to gasify it, solid 5nCt4 is heated and an inert gas such as ArsHe is blown into the inert gas. The gas thus generated is preferably introduced into a deposition chamber with a reduced pressure inside at a desired gas pressure.

Using a glow discharge method, a-5iGe (H,X), a-3i containing oxygen atoms, carbon atoms, or nitrogen atoms
To form a layer or a partial layer region composed of Sn(H,X) or a-5iGeSn(H,X), the above-mentioned a
-5iSn (H,X) or/and a -5iSn
When forming a layer composed of (H, X), atoms (O, C
,N)) The starting material for introduction is a-5iGe (H,X
) or/and a-8iSn(H,

As a starting material for introducing such atoms (0, C, N), most gaseous substances or substances that can be gasified have at least atoms (0, C, N) as constituent atoms. Specifically, as a starting material for introducing oxygen atoms (0), for example, oxygen (02), ozone (0
3), -nitrogen oxide (No), nitrogen dioxide (NO2), -
Nitrogen dioxide (N20), nitrogen sesquioxide (N203),
Trinitrogen tetraoxide (N204), nitrogen sesquioxide (N2O5)
, nitrogen trioxide (NO3), silicon atom (Si), oxygen atom (0), and hydrogen atom (H) as constituent atoms, for example, disiloxane (B3 S io Si B3
), trisiloxane (HaSiO8iH20SiH3
) and the like, and examples of starting materials for introducing carbon atoms (C) include methane (CH4),
Ethane (C2H6), Propane (C3H1l), n-
Saturated hydrocarbons with 1 to 5 carbon atoms such as butane (n-C4H1o), pentane (C5H12), ethylene (C2H4)
, propylene (C3H6), butene-1 (C4H8),
Butene-2 (C4H8), Isobutylene (C4H1l)
, ethylenic hydrocarbons having 2 to 5 carbon atoms such as CsHto, 2 to 4 carbon atoms such as acetylene (C2H2), methylacetylene (C3H4), butyne (CaHe), etc.
Examples include acetylene hydrocarbons, etc., and nitrogen atoms (N)
Starting materials for introduction include, for example, nitrogen (N2), ammonia (NH3), hydrazine (H2NNH2), hydrogen azide (HN3N), ammonium azide (N3),
H4N3), nitrogen trifluoride (F3N), nitrogen tetrafluoride (
F4N), etc.

In addition, atoms (0, C) can be prepared by sputtering.

a-5iGe (H,X) containing N), a-5
When forming a layer composed of iSn(H,X) or a-3iGeSn(H,X), atoms (0, C, N)
As starting materials for introduction, in addition to the above-mentioned gasifiable starting materials listed for the glow discharge method, mention may be made of Sich, Si3N4, carbon black, etc. as solidified starting materials. These can be used in the form of targets such as St.

a-5ide (H,X) or/and a-5i containing a group II atom or a group
In order to form a layer or a partial layer region composed of Sn (H,X), the above-mentioned a-5iGe (H,X) or /
and a-3iSn(H,X), the starting material for introducing group II atoms or group V atoms is
-5iGe (H,X) or/and a-8iSn(H
,

Specifically, starting materials for the introduction of group Ⅰ atoms include B2H6, B4HIO, B5H9, B2H6, B4HIO, B5H9,
Examples include boron hydrides such as 5H11, B6H10, B6H12, and B6H14, and boron halides such as BF3, BCl3, and BBr3.

(7) and others, ALCl-3, GaCl3, Ga(CH3
) 2, InCA3, TtC4s, etc. can also be mentioned.

As a starting material for introducing a group Ⅰ atom, specifically for introducing a phosphorus atom, hydrogen north neighbors such as PH3, P2H6, PH4
I, PFa, PFs, BCl3, P CL s, PBr
Examples include halogen ratios such as 3, PBr3, and PBr3.

In addition, AsHa, AS F3, ASC23, AsBr
3, ASFs, 5bHa, SbF3.5bFs, 5bc
z 3.5bCLs, BiH3, BiCl2, B1Br
5 and the like can also be mentioned as effective starting materials for introducing Group V atoms.

As described above, the first layer of the light-receiving member of the present invention is formed using a glow discharge method, a sputtering method, etc. atoms or Group V atoms, oxygen atoms, carbon atoms or nitrogen atoms, or hydrogen atoms or/and
The content of each rogen atom is controlled by controlling the gas flow rate of each starting material for supplying atoms flowing into the deposition chamber or the gas flow rate ratio between the starting materials for supplying atoms.

In addition, conditions such as the support temperature, gas pressure in the deposition chamber, and discharge power during the formation of the first layer are important factors in order to obtain a light-receiving member with desired characteristics, and the functions of the layer to be formed are important factors. It is selected as appropriate, taking into consideration the following. moreover,
These layer formation conditions may differ depending on the type and amount of each of the atoms mentioned above to be contained in the first layer, so it is necessary to determine them by taking into consideration the type and amount of atoms to be contained. be.

Specifically, when forming the first layer, the support temperature is usually 50 to 350°C, more preferably 50 to 30°C.
The temperature is preferably 0°C, particularly preferably 100 to 300°C. The gas pressure in the deposition chamber is usually 0.01 to 5 Torr, preferably 0.001 to 3']:'orr, particularly preferably 0.1 to 1'1'orr.

Further, the discharge power is usually 0.005 to 50 W/cn, preferably 0.01 to 30 W/i, and particularly preferably 0.01 to 20 W/ct/l.

However, the specific conditions for layer formation, such as support temperature, discharge power, and gas pressure in the deposition chamber, are usually difficult to determine individually. Therefore, in order to form an amorphous material layer with desired characteristics, it is desirable to determine optimal conditions for layer formation based on mutual and organic relationships.

In the light-receiving member of the present invention, the light-receiving layer thereof must be formed to have at least a pair of non-parallel interfaces within a short range, as described above. The surface of the layer formed is formed so that it is non-parallel to the support surface, but in order to do so, the discharge power and gas pressure must be kept relatively high during the film forming operation. carried out by

The discharge power and gas pressure vary depending on the type of gas used, the material of the support, the shape of the surface of the support, the temperature of the support, etc., and are determined in consideration of these various conditions.

By the way, germanium atoms and/or tin atoms, atoms (0, C, N), No.
In order to make the distribution of group atoms, group (III) atoms, hydrogen atoms and/or hydrogen atoms uniform, it is necessary to keep the above conditions constant when forming the first layer. be.

In addition, in the present invention, when forming the first layer, germanium atoms, tin atoms, atoms (
In order to form a photoreceptive layer having a desired distribution state in the layer thickness direction by changing the distribution concentration of Group 2 atoms or Group V atoms in the layer thickness direction, a glow discharge method is used. If used, a germanium atom or/and a tin atom, an atom (0, C, N'), or a group II atom or a group V atom
The gas flow rate at which the gas of the starting material for group atom introduction is introduced into the deposition chamber is changed as appropriate according to the desired rate of change, and other conditions are kept constant. In order to change the gas flow rate, the opening of a predetermined needle pulp provided in the middle of the gas flow path system is gradually opened by some commonly used method, such as manually or by an externally driven motor. All you have to do is perform an operation to change it. At this time, the rate of change in the flow rate does not need to be linear; for example, a microcomputer or the like can be used to control the flow rate according to a rate-of-change curve designed in advance to obtain a desired content rate curve.

In addition, when forming the first layer using a sputtering method, germanium atoms, tin atoms, atoms (0, C, N
), or to form a desired distribution state in the layer thickness direction by changing the distribution concentration in the layer thickness direction ° of Group II atoms or Group V atoms in the layer thickness direction, a glow discharge method is used. Similarly, germanium atoms or tin atoms, atoms (0, C, N
) Alternatively, the exhaust substance for introducing Group I atoms or Group V atoms is used in a gaseous state, and the gas flow rate when introducing the gas into the deposition chamber is varied according to a desired rate of change.

Second layer The second layer 103 of the light-receiving member of the present invention is a layer provided on the above-described first layer 102 and having a free surface 104, that is, a surface layer, and the free surface of the light-receiving layer. In addition to exhibiting a function of reducing reflection at 104 and increasing transmittance, that is, an antireflection function, the light-receiving member has various characteristics such as moisture resistance, continuous repeated use characteristics, electrical pressure resistance, usage environmental friendliness, and durability. It performs the function of improving the

In addition to the condition that the material forming the second layer exhibits an excellent antireflection function and the function of improving the various properties described above, the material for forming the second layer is The first layer should not have a negative effect on conductivity, should have electrophotographic properties such as resistance above a certain level, should have excellent solvent resistance when liquid development is used, and should be formed immediately. For example, MgFz, AA+03, ZrCh, TiO2, ZnS
, CeO2, CeFs, Ta205, A4F3, NaF
Examples include at least one selected from inorganic fluorides, inorganic oxides, and inorganic sulfides.

In addition, in order to efficiently achieve antireflection, the second layer forming material is used as the second layer forming material.

When the refractive index of is n, and the refractive index of the constituent layers of the first layer on which the second layer is directly laminated is n, it is desirable to select and use a material that satisfies the following formula:

Hereinafter, the above-mentioned inorganic fluorides, inorganic oxides and inorganic sulfides,
Or give some examples of refractive indices of mixtures thereof, but for these refractive indices, the type of layer to be created,
Needless to say, it varies somewhat depending on conditions and the like. Note that the numbers in parentheses represent the refractive index.

Zr0z (2,00), Ti0z (2,26), Z
rO2/'riQ2=6/1 (2,09'), Ti
0z/Zr0z = 3/1 (2,20), G
'eO2 (2,23), zns (2,24), Atz
O3 (1,63), CeF3 (1,60), Atz03
/ Zr0z = 1 / 1 (1,68), Wig
Fz (1,38) Furthermore, the thickness of the second layer is determined by d, the refractive index of the material constituting the second layer, n1, the wavelength of the irradiated light, and λ.
In this case, it is desirable to satisfy the following formula: d = −m (where m is a positive odd number) n. Specifically, when the wavelength of the exposure light is in the wavelength range from near infrared to visible light, the thickness of the second layer is preferably 0.05 to 2 μm.

Regarding the formation of the second layer, since it is necessary to control the layer thickness at an optical level in order to efficiently achieve the object of the present invention, vapor deposition method, sputtering method, plasma vapor phase method can be used. , a photo CVD method, a thermal CVD method, etc. are used. It goes without saying that these forming methods are appropriately selected and used in consideration of factors such as the type of material forming the surface layer, manufacturing conditions, the level of equipment capital investment, and the manufacturing scale.

Incidentally, from the viewpoint of ease of operation, ease of setting conditions, etc., it is preferable to employ a sputtering method when the above-mentioned inorganic compound is used to form the surface layer. That is, by using an inorganic compound for forming a surface layer as a target, using Ar gas as a sputtering gas, and causing glow discharge to sputter the inorganic compound, the inorganic compound is sputtered onto the support on which the first layer is formed. , deposit the second layer.

By having the above-described layer structure, the light-receiving member of the present invention can solve all of the problems of the light-receiving member having a light-receiving layer made of amorphous silicon. Even when laser light, which is light, is used as a light source, it is possible to significantly prevent the appearance of interference fringe patterns in formed images due to interference phenomena, and to form extremely high-quality visible images.

In addition, the light-receiving member of the present invention has high photosensitivity in the entire visible light range, and is particularly excellent in photosensitivity characteristics on the long wavelength side, so it is particularly excellent in matching with semiconductor lasers, and has a high photoresponsiveness. It exhibits excellent electrical, optical, photoconductive customization, electrical voltage resistance, and use environment characteristics.

In particular, when applied as a light-receiving member for electrophotography, there is no influence of residual potential on image formation, its electrical characteristics are stable, it is highly sensitive, and it has a high signal-to-noise ratio. As a result, it has excellent light fatigue resistance and repeated use characteristics, and can stably and repeatedly produce high-quality images with high density, clear no-ft tones, and high resolution.

〔Example〕

Hereinafter, the present invention will be explained in detail according to Examples 1 to 15, but the present invention is not limited thereto.

In each example, the first layer was formed using a glow discharge method, and the second layer was formed using a sputtering method. FIG. 25 shows an apparatus for manufacturing a light-receiving member of the present invention.

2502.2503.2504.2505.25 in the diagram
The raw material gas for forming each layer of the present invention is sealed in the gas cylinder 06, and as an example, 2502 is SiF4 gas (purity 99.999%).
2503 is a B2H5 gas diluted with H2 (purity 99.999, hereinafter abbreviated as B2H6/[2)) cylinder, 2504 is a CH4 gas (purity 99.999) cylinder, and 2505 is GeF4 gas (purity 99.99). 999%
) cylinder, 2506 H inert gas (He) cylinder. And 2506' is a closed container containing 5nC24.

In order to cause these gases to flow into the reaction chamber 2501, pulps 2522 to 2526 of gas cylinders 2502 to 2506,
Confirm that the leak pulp 2535 is closed, and also check the inflow pulps 2512 to 2516 and the outflow pulp 2517.
~2521, confirming that the auxiliary pulps 2532 and 2533 are open, first open the main pulp 2534 to exhaust the reaction chamber 2501 and gas piping. Next, vacuum A
An example of forming the first layer and the second layer on the t-cylinder 2537 will be described below.

First, SiF4 gas from gas cylinder 2502, B2I-T6/Ha gas from gas cylinder 2503, gas cylinder 2
504) CHL gas, Ge from gas cylinder 2505
Pulp each of F4 gas 2522.2523.2524
．． 2525 and outlet pressure gauge 2527.2528.
Adjust the pressure of 2529.2530 to I Kg/ad,
Gradually open the inflow pulp 2512.2513.2514.2515 and mass 70 controller 2507.250
8.2509.2510. Subsequently, the outflow pulp 2517.2518.2519.2520 and the auxiliary pulp 2532 are gradually opened to supply gas to the reaction chamber 2501.
flow into the world.

At this time, SiF4 gas flow rate, GeF4 gas flow rate, C
The outflow pulp 2517.2518.2519 so that the H4 gas flow rate and the ratio of 82H6/H2 gas flow rate become the desired value.
．． 2520 and the opening of the main pulp 2534 while checking the reading on the vacuum gauge 2536 so that the pressure inside the reaction chamber 2501 reaches the desired value. And the base/
After confirming that the temperature of the cylinder 2537 is set to a temperature in the range of 50 to 400°C by the heater 2538, the power source 8540 is set to the desired power to generate glow discharge in the reaction chamber 2501. At the same time, using a microcomputer (not shown), SiF4 gas,
While controlling the gas flow rates of GeF< gas, CH4 gas, and B2H6/H2 gas, a first layer containing /licon atoms, germanium atoms, carbon atoms, and boron atoms is first formed on the substrate/linda-2537. .

In addition, when containing tin atoms in the first layer and using a gas containing 5nC14 as a starting material, solid 5nC contained in 2506'
t4 is heated using a heating means (not shown), and five inert gases such as Argue are blown into the SnC/-4 from an inert gas cylinder 2506 such as ζArXJ (e) and bubbled. The gases include the aforementioned 5jF4 gas, GeF4 gas, CH4 gas, and 82H.
It is made to flow into the reaction chamber by the same procedure as a/H2 gas, etc.

After forming the first layer by the glow discharge method as described above, after closing the valves for each source gas and diluent gas used to form the first layer, leak pulp 2535 was gradually added. The deposition apparatus is opened to return to atmospheric pressure, and then argon gas is used to clean the interior of the deposition chamber.

Next, a target made of an inorganic compound for forming a second layer is placed on seven sides on the cathode electrode (not shown), and after closing the leak pulp 2535 and reducing the pressure inside the deposition apparatus, argon gas is introduced into the deposition apparatus. is 0.015 to 0.02 Torr
Introduce it until it reaches a certain level.

A glow discharge is generated in these areas using high frequency power (approximately 150 to 170 W), and an inorganic compound is sputtered to deposit a second layer on the already formed first layer.

Test Example 1 An SOS stainless steel rigid sphere with a diameter of 0.6 mm was chemically treated to etching the surface to form irregularities. Examples of the processing agent used include acids such as hydrochloric acid, hydrofluoric acid, sulfuric acid, and chromic acid, and alkalis such as caustic soda. In this test example, a hydrochloric acid solution mixed at a volume ratio of 1 to 4 parts pure water to 1 part concentrated hydrochloric acid was used, and the immersion time of the hard sphere, acid concentration, etc. were varied to adjust the shape of the unevenness as appropriate.

Test Example 2 A rigid sphere treated by the method of Test Example 1 (height of surface irregularities rmax = 5 μm) was used in the sixth (A).

(B) Using the apparatus shown in the figure, the surface of an aluminum alloy cylinder (diameter 60 mm, length 298 mm) was treated to form irregularities.

When examining the relationship between the diameter of a perfect sphere, the falling height h, and the curvature R1 width r of the trace depression, it was found that the curvature R and width r of the trace depression are based on the diameter R' of the perfect sphere, the falling height h, etc. It was confirmed that it is determined by the conditions. Additionally, it was confirmed that the pitch of the dents (the density of the dents and the pitch of the unevenness) can be adjusted to the desired pitch by controlling the rotational speed and number of cylinders or the amount of fall of the rigid sphere. It was done.

Furthermore, as a result of considering the sizes of R and D, we found that if R is less than 0.1 mm, the rigid sphere must be made smaller and lighter to ensure the falling height, making it difficult to control the formation of dents. This is not preferable because R is 2.
If it exceeds 0 mm, the rigid sphere will be made heavier and the falling height will be adjusted. For example, if you want to make D relatively small, you will need to make the falling height extremely low, thereby controlling the formation of dents. Furthermore, if D is less than 0.02 mm, the rigid sphere must be made small and light to secure the falling height, which is not desirable because it becomes difficult to control the formation of dents. but,
Both were confirmed.

Furthermore, when the formed trace depressions were examined, it was confirmed that minute irregularities corresponding to the surface irregularities of the rigid sphere were formed within the trace depressions.

Example 1 The surface of an aluminum alloy cylinder was treated in the same manner as Test Example 2, and the surface of the aluminum alloy cylinder was treated to give D and black 101 to 106) shown in the upper column of Table 1A.
I got it.

Next, a first layer was formed on the A2 support (cylinder & 101 to 106) using the manufacturing apparatus shown in FIG. 25 under the conditions shown in Table 1B below. Note that the gas flow rates of SiF4 gas and GeFa gas during the first layer formation were automatically adjusted by microcomputer control according to the flow rate change line shown in FIG.

After that, Zr02 (refractive index 2
．． 00) to form a second layer having a layer thickness of 0.293 μm.

These light-receiving members were subjected to image exposure by irradiating laser light with a wavelength of 780 nm and a spot diameter of 80 μm using an image exposure apparatus shown in FIG. Development and transfer were performed to obtain an image. The occurrence of interference fringes in the obtained image was as shown in the lower column of Table 1A.

Note that FIG. 26(Aj) is a schematic plan view schematically showing the entire exposure apparatus, and FIG. 26(B) is a schematic side view schematically showing the entire exposure apparatus. In the figure, 2601 is a light receiving The members 2602 are semiconductor lasers, 2603 are fθ lenses, and 2604 are polygon mirrors.

Next, as a comparison, an aluminum alloy cylinder ('M7
) (diameter 60mm, length 298mm, uneven pitch 100μ
A light-receiving member was produced in the same manner as described above using m1 unevenness depth of 3 μm). When the obtained light-receiving member was observed under an electron microscope, it was found that the support surface, the layer interface of the light-receiving layer, and the surface of the light-receiving layer were parallel to each other. Using this light-receiving member, images were formed in the same manner as described above, and the obtained images were evaluated in the same manner as described above. The results are as shown in the lower column of Table 1A. Example 2 The At support (Cylinder 101 to 107) Form a photoreceptive layer on top. Note that the boron atoms contained in the first layer are BzHa/
SiF4+GeF4'', 100 ppm, was introduced as much as possible so that the entire layer was doped at about 200 ppm.

When an image was formed on the obtained light-receiving member in the same manner as in Example 1, the occurrence of interference fringes in the obtained image was as shown in the lower column of Table 2A.

Example 3 Height of surface irregularities shown in the upper column of Table 3A (r max )
El, Te, spherical trace depression (D = 450 ± 50 μm), (- =
0.05) (Cylinder melon 301~
306) was obtained.

Next, a first layer was formed on the At support (cylinder & 301 to 306) using the manufacturing apparatus shown in FIG. 25 under the conditions shown in Table 3B below. It was formed by In addition, B2He at the time of forming the first layer
The gas flow rates of /H2 gas and phosphorus gas were automatically adjusted by microcomputer control according to the flow rate change curve shown in FIG. Further, boron atoms contained in the first layer were introduced under the same conditions as in Example 2. After forming the first layer, TjOz (refractive index 2.
26) so that the layer thickness is 0.259 pm,
The second layer was formed by sputtering.

When an image was formed on the obtained light-receiving member in the same manner as in Example 1, the occurrence of interference fringes in the obtained image was as shown in the lower column of Table 3A.

Example 4 A light-receiving layer was formed on the At support (cylinder geese 301 to 306) in the same manner as in Example 3, except that the first layer was formed according to the layer forming conditions shown in Table 4B.

Note that GeF4 gas and Si
The gas flow rates of Fa gas, BzHa/& gas, and H2 gas were automatically adjusted by microcomputer control according to the flow rate change line shown in FIG. Further, boron atoms contained in the first layer were introduced under the same conditions as in Example 2.

When an image was formed on the obtained light-receiving member in the same manner as in Example 1, the occurrence of interference fringes in the obtained image was as shown in the lower column of Table 4A.

Example 5 Example 1 A first layer was formed on a 0kl support (Cylinder 105) under the layer forming conditions shown in Table 5A. The boron atoms contained in the first layer were introduced under the same conditions as in Example 2. After forming the first layer, use the second layer constituent materials (501 to 520) shown in the upper column of Table 5B to form the second layer so that each layer has the layer thickness shown in the lower column of Table 5B. ,
It was formed by a sputtering method.

Image formation was performed on the obtained light receiving members (501 to 520) in the same manner as in Example 1.

No interference fringes were observed in any of the images obtained.
And it was of extremely good quality.

Example 6 On the At support (cylinder 4105) of Example 1,
A light-receiving layer was prepared in the same manner as in Example 5, except that the first layer was formed according to the layer forming conditions shown in Table 6. (601-620) Obtained light-receiving member (601-6
20), image formation was performed in the same manner as in Example 1.

In all of the images obtained, no interference fringes were observed, and they were of extremely good quality.

Examples 7 to 15 At support used in Example 1 (cylinder, +ff11
03 to 106), after forming the first layer according to the layer forming conditions shown in Tables 7 to 15', respectively, using the layer forming materials shown in the upper column of Table 16, respectively. A second layer having the thickness shown in the lower column was formed by sputtering.

In addition, in Examples 7 to 10 and 12 to 15, the gas used at the time of forming the first layer was 30.28, respectively.
, and the flow rate change lines shown in Figures 31 to 36, automatically adjusted by microcomputer control. Further, the boron atoms contained in the first layer were under the same conditions as in Example 2 (7) in each Example.

When images were formed on these light-receiving members in the same manner as in Example 1, good results similar to those in Example 1 were obtained.

[Summary of effects of the invention]

The light-receiving member of the present invention has the above-described layer structure, thereby solving all of the problems of the light-receiving member having a light-receiving layer made of the amorphous 7-licon, and especially Even when monochromatic laser light is used as a light source, it is possible to significantly prevent the appearance of interference fringes in the formed image due to interference phenomena, and to form an extremely high-quality visible image.

In addition, the light-receiving member of the present invention has high photosensitivity in the entire visible light range, and is particularly excellent in photosensitivity characteristics on the long wavelength side, so it is particularly excellent in matching with semiconductor lasers, and has a high photoresponsiveness. It exhibits excellent electrical, optical, photoconductive properties, electrical pressure resistance, and use environment properties.

In particular, when applied as a light-receiving member for electrophotography, there is no influence of residual potential on image formation, its electrical characteristics are stable, it is highly sensitive, and it has a high signal-to-noise ratio. As a result, it has excellent light fatigue resistance and repeated use characteristics, and can stably and repeatedly produce high-quality images with high density, clear no-ft tones, and high resolution.

[Brief explanation of drawings]

FIG. 1 is a diagram schematically showing an example of the light-receiving member of the present invention, and FIGS. 2 and 3 are diagrams for explaining the principle of preventing the generation of interference fringes in the light-receiving member of the present invention. FIG. 2 is a partially enlarged view showing that the generation of interference fringes can be prevented in a light-receiving member in which irregularities formed by spherical trace depressions are formed on the surface of the support, and FIG. 3 is a diagram showing a conventional surface. FIG. 3 is a diagram showing that interference fringes occur in a light-receiving member in which a light-receiving layer is deposited on a regularly roughened support. FIGS. 4 and 5 are schematic diagrams for explaining the uneven shape of the support surface of the light-receiving member of the present invention and the method for producing the uneven shape. FIG. 6 is a diagram schematically showing a configuration example of an apparatus suitable for forming the uneven shape provided on the support of the light-receiving member of the present invention, and FIG. 6(A) is a front view. , 6th
(B) is a longitudinal sectional view. Figures 7 to 15 are diagrams showing the distribution state of germanium atoms or tin atoms in the layer thickness direction in the first layer of the present invention, and Figures 16 to 24 are diagrams showing the distribution state of germanium atoms or tin atoms in the first layer of the present invention. These are diagrams showing the distribution state of at least one kind selected from oxygen atoms, carbon atoms, and nitrogen atoms, as well as group m atoms or group (III) atoms in the layer thickness direction. The layer thickness is shown, and the horizontal axis represents the distribution concentration of each atom. FIG. 25 is an example of an apparatus for manufacturing the first layer and second layer of the light-receiving member of the present invention, and is a schematic explanatory diagram of a manufacturing apparatus using a glow discharge method. FIG. 26 is a diagram illustrating an image exposure apparatus using laser light. 27 to 36 are diagrams showing changes in gas flow rate in the first layer formation of the present invention, where the vertical axis shows the layer thickness of the first layer, and the horizontal axis shows the gas flow rate of the used gas. . Regarding FIGS. 1 to 3, 100... Light receiving member, 101... Support, 102
, 201. 301...first layer, 103, 202, 302.
...Second debris, 104, 203, 303...Free surface, 204, 304...Interface between the -th layer and second layer Regarding Figure 4.5, 401, 501...Support Body, 402, 502...
・Support surface, 403, 503... spherical trace depression,
403', 503'...Rigid sphere having an uneven shape on the surface, 404...Minute uneven shape formed in the spherical trace depression, 404'...Erregular shape formed on the surface of the rigid sphere FIG. Regarding, 601...Cylinder, 602...Rotating shaft (receiver),
603 driving means, 604... rotating container, 605...
・Rigid sphere having an uneven shape on the surface, 606...Ribs provided on the inner wall of the container, 607...Regarding the shower pipe in FIG. 25, 2501...Reaction chamber, 2502-2506...Gas cylinder, '2506'-5nC1<tank, 2507~2
511-7 Sfuroko/Trolla, 2512-2516・
... Inflow pulp, 2517-2521 ... Outflow pulp, 2522-2526 Mountain valve, 2527-2531
...Pressure regulator, 2532, 2533 Mountain auxiliary valve, 2534... Main pulp, 2535... Leak pulp, 2536... Vacuum gauge, 2537... Base cylinder, 2538... Heating heater, 2539・・・
・Motor, 2540...About high frequency power supply Fig. 26,

Claims (1)

[Scope of Claims] (1) A first layer made of an amorphous material containing silicon atoms and at least one of germanium atoms or tin atoms, and a second layer having an antireflection function on a support. A light-receiving member having a light-receiving layer consisting of two layers, wherein the surface of the support has an uneven shape formed by a plurality of spherical trace depressions, and further has a plurality of minute irregularities within the spherical trace depressions. A light-receiving member characterized by having a shape. (2) The light-receiving member according to claim (1), wherein the first layer contains at least one type selected from oxygen atoms, carbon atoms, and nitrogen atoms. (3) The light-receiving member according to claim (1), wherein the first layer contains a substance that controls conductivity. (4) Claim No. 1 in which the first layer has a multilayer structure
) The light-receiving member according to item 1. (5) The light-receiving member according to claim (4), wherein the first layer has as one of the constituent layers a charge injection blocking layer containing a substance that controls conductivity. (6) The light-receiving member according to claim (4), wherein the first layer has a barrier layer as one of the constituent layers. (7) The light-receiving member according to claim (1), wherein the second layer is made of at least one selected from inorganic fluorides, inorganic oxides, and inorganic sulfides. (8) When the refractive index of the substance constituting the second layer is n and the wavelength of the irradiation light is λ, the thickness d of the second layer is calculated by the following formula: d=(λ/4n)m (however, The light-receiving member according to claim 7, which satisfies the following (m is a positive odd number). (9) When the refractive index of the substance constituting the second layer is n, and the refractive index of the amorphous material constituting the first layer in contact with the second layer is n_a, the following formula: n=√ The light-receiving member according to claim (7), which satisfies n_a. (10) A plurality of uneven shapes provided on the surface of the support body,
The light-receiving member according to claim 1, wherein the light-receiving member has an uneven shape with spherical trace depressions having the same curvature. (11) A plurality of uneven shapes provided on the surface of the support body,
The light-receiving member according to claim 1, wherein the light-receiving member has an uneven shape with spherical trace depressions having the same curvature and the same width. (12) The uneven shape on the surface of the support is an uneven shape due to the vestigial depressions of the rigid spheres obtained by naturally falling a plurality of rigid spheres having uneven surfaces onto the surface of the support. The light-receiving member according to item (1). (13) The uneven shape of the surface of the support body is an uneven shape caused by the trace depressions of the rigid spheres obtained by dropping a plurality of rigid spheres having approximately the same diameter and having an uneven surface from approximately the same height. A light-receiving member according to claim (12). (14) The curvature R and width D of the spherical trace depression are expressed by the following formula: 0.
035≦D/R≦0.5. The light receiving member according to claim (1). (15) The light-receiving member according to claim (14), wherein the width D of the spherical trace depression satisfies the following formula: D≦0.5 mm. (16) The light-receiving member according to claim (1), wherein the height r of the minute irregularities within the spherical trace depressions is a value that satisfies the following formula: 0.5 μm≦r≦20 μm. (17) Claim No. 1, wherein the support is a metal body.
) The light-receiving member according to item 1.