JPS6287968A - Light receiving member - Google Patents

Abstract

PURPOSE:To improve the durability and moisture resistance of a light receiving member by making the surface of the support uneven by plural hemispherical dents. CONSTITUTION:When a light receiving layer consisting of a photosensitive layer 102 of an Si-base amorphous material and a surface layer 103 of an amorphous material contg. Si and at least one among O, C and N is formed on a support 101 to produce a light receiving member 100, optical band gaps are matched on the interface between the layers 102, 103 and the surface of the support is made uneven by plural hemispherical dents. In case where the curvature R and the width D of the dents satisfy >=0.035 ratio of D/R, >=0.5 Newton's ring by shearing interference is present in each of the dents. Thus, superior electrical, optical and photoconductive characteristics, high dielectric strength and superior resistance to service environment are obtd.

Description

[Detailed description of the invention] [Technical field to which the invention pertains] The present invention relates to the use of light (here, light in a broad sense, such as ultraviolet rays, visible light,
It relates to a light-receiving member that is sensitive to electromagnetic waves such as infrared rays, X-rays, gamma rays, etc.

More specifically, the present invention relates to a light receiving member suitable for using coherent light such as laser light.

[Description of prior art]

As a method for recording digital image information as an image, a static latent image is formed by optically scanning a light-receiving member with a laser beam modulated according to the digital image information, and then the latent image is developed. There are also known methods of recording images that further perform processes such as transfer and fixing as necessary. Among them, in image forming methods using electrophotography, small and inexpensive He-Ne lasers or semiconductor lasers are used as lasers. (usually having an emission wavelength of 650 to 820 nm) is commonly used to perform image recording.

By the way, as a light-receiving member for electrophotography suitable when using a semiconductor laser, in addition to being superior in consistency of its photosensitivity region compared to other types of light-receiving members,
Amorphous materials containing silicon atoms, which are evaluated for their high Vickers hardness and low pollution problems, such as those found in JP-A-54-8<5341 and JP-A-56-83746. (hereinafter abbreviated as ra-8iJ)
A light-receiving member consisting of is attracting attention.

However, in the light-receiving member, if the light-receiving layer is a single-layer A-8I layer, it is difficult to maintain its high photosensitivity and ensure a dark resistance of 1012Ω or more required for electrophotography. , it is necessary to structurally contain hydrogen atoms, halogen atoms, or boron atoms in addition to these in a specific amount range in a controlled manner in the layer, so various conditions are required during layer formation. There are considerable limitations on the design tolerances of the light-receiving member, such as the need to strictly control the Proposals have been made to improve such design tolerance problems by making it possible to effectively utilize the high light sensitivity even if the dark resistance is low to some extent. That is, for example, JP-A-54-121743, JP-A-57-4053, and JP-A-57-417.
As seen in Japanese Patent Application Laid-Open No. 57-52178, the photoreceptive layer may have a layer structure of two or more layers having different conductivity characteristics, and a depletion layer may be formed inside the photoreceptive layer, or No. 52179, No. 52180, No. 58159,
As seen in Patent Publications No. 58160 and No. 58161, the appearance is A light-receiving member with increased dark resistance has been proposed.

However, in such a light-receiving member whose light-receiving layer has a multilayer structure, the thickness of each layer varies by 6D, and when performing laser recording using this, the laser light is coherent monochromatic light, so the light-receiving layer The free surface on the laser beam irradiation side, each layer constituting the photoreceptive layer, and the layer interface between the support and the photoreceptor layer
From now on, the term "free surface" and "layer interface" will be used together.
"interface". ) The reflected light beams that are reflected from each other often cause interference.

This interference phenomenon causes the so-called,
This appears as an interference fringe pattern and causes image defects. Particularly in the case of forming a half-tone image with high gradation, a blurred image with extremely poor distinguishability is produced.

Another important point is that as the wavelength range of the semiconductor laser light used becomes longer, the absorption of the laser light in the photoreceptive layer decreases, so there is a problem that the above-mentioned interference phenomenon becomes more noticeable. .

That is, for example, in a device having two or more layers (multilayer), interference effects occur in each of those layers, and each interference 76 (when they act synergistically to form an interference fringe pattern, ζ This directly affects the transfer member, and there is a problem that interference fringes corresponding to the interference fringe pattern are transferred and fixed onto the member and appear in a visible image, resulting in a defective image.

As a measure to solve these problems, (a) a method in which the surface of the support is diamond-cut to provide unevenness of ±500X to ±10,000 degrees to form a light scattering surface (for example,
8-162975), (b) the surface of the aluminum support is treated with black alumite), or a method of dispersing carbon, coloring pigments, and dyes in a resin and dispersing them to form a light absorption layer ( For example, JP-A-57-165845
(C) A method of providing a light scattering and anti-reflection layer on the surface of an aluminum support by subjecting the surface of the support to satin-like alumite treatment or by sandblasting to provide fine roughness in the form of grains. (For example, see Japanese Unexamined Patent Publication No. 57-16554.) etc. have been proposed.

Although these proposed methods provide some results, they are not sufficient to completely eliminate the interference fringe pattern that appears on images.

That is, in method (a), a large number of irregularities of a specific t are provided on the surface of the support, and although this prevents the appearance of interference fringes due to the light scattering effect to some extent,
As for light scattering, the specularly reflected light component still remains, so in addition to the interference fringe pattern caused by the specularly reflected light remaining, the irradiation spot is spread due to the light scattering effect on the support surface. This results in a substantial decrease in resolution.

Regarding method (b), complete absorption is not possible with black alumite treatment, and the reflected light on the surface of the support remains. In addition, when providing a colored pigment dispersed resin layer,
When forming the a-8i layer, a degassing phenomenon occurs from the resin layer,
The layer quality of the formed photoreceptive layer is significantly deteriorated, and the resin layer is damaged by the plasma during the formation of the A-8I layer, reducing its original absorption function and causing subsequent damage due to the formation of the surface J state. This method has problems such as having an adverse effect on the formation of the a-8i layer.

Regarding method (C), for example, if we look at incident light, a part of it is reflected on the surface of the photoreceptive layer and becomes reflected light.
The remainder enters the inside of the light-receiving layer and becomes transmitted light. At the surface of the support, part of the transmitted light is scattered and becomes diffused light, the remaining part is specularly reflected and becomes reflected light, and part of it becomes emitted light and is emitted outside. However, since the emitted light is a component that interferes with the reflected light and remains in any case, the interference fringe pattern still does not disappear completely.

By the way, in order to prevent interference in this case, some attempts have been made to increase the diffusivity of the surface of the support so that multiple reflections do not occur within the photoreceptive layer, but such attempts instead cause light to be absorbed within the photoreceptive layer. is diffused and causes halation, which ultimately results in a decrease in resolution.

In particular, in a multilayered light-receiving member, even if the surface of the support is irregularly roughened, the light reflected from the first layer surface, the light reflected from the second layer, and the specularly reflected light from the support surface are all affected. The interference results in an interference fringe pattern depending on the thickness of each layer of the light-receiving member. Therefore, in a multilayer light-receiving member, it is impossible to completely prevent interference fringes by irregularly roughening the surface of the support.

Furthermore, when the surface of the support is irregularly roughened by a method such as sandblasting, the degree of roughness varies greatly between lots, and even within the same lot, the degree of roughness is uneven. There is a problem with manufacturing management. In addition, relatively large protrusions are often formed randomly, and such large protrusions cause local breakdown of the photoreceptive layer.

Furthermore, if the surface of the support is simply roughened regularly,
Since the light-receiving layer is deposited along the uneven shape of the surface of the support, the inclined surface of the unevenness of the support and the inclined surface of the unevenness of the light-receiving layer become parallel, and in that part, the incident light is directed to the bright area. Furthermore, since the thickness of the photoreceptive layer is non-uniform throughout the photoreceptive layer, a striped pattern of light and darkness appears. Therefore, simply by regularly roughening the surface of the support, it is not possible to completely prevent the occurrence of interference fringes.

Also, when a multilayered light-receiving layer is deposited on a support whose surface is regularly roughened, specular reflection light on the support surface and
In addition to the interference with the reflected light on the surface of the light-receiving layer, there is also interference due to the reflected light at the interface between each layer, so that the degree of interference fringe pattern development becomes more complicated than that of a light-receiving member with a single-layer structure.

Furthermore, the problem of interference caused by reflected light in such a multilayered light-receiving member is largely related to its surface layer. That is, as is clear from the above, if the thickness of the surface layer is not uniform, an interference phenomenon will occur due to reflected light at the interface between the surface layer and the photosensitive layer in contact with it, causing damage to the light receiving member. It impairs function.

By the way, the state in which the layer thickness of the surface layer is non-uniform is not only suppressed during the formation of the surface layer, but also caused by abrasion, particularly partial abrasion, during use of the light-receiving member. Particularly in the latter case, as described above, not only will an interference pattern appear, but also sensitivity changes and sensitivity unevenness will occur in the entire light-receiving member.

Attempts have been made to make the surface layer as thick as possible in order to eliminate these surface layer-related problems, but in this case, in addition to creating a factor that increases the residual potential, On the contrary, the layer thickness unevenness increases, and a light-receiving member having such a surface layer has factors that cause problems such as changes in sensitivity and unevenness in reading when it is formed. In other words, the initial image may not be worth adopting.

[Purpose of the invention]

The object of the present invention is to eliminate the above-mentioned problems and to provide a light-receiving member having a light-receiving layer mainly composed of a-Si, which satisfies various demands.

That is, the main object of the present invention is to have electrical, optical, and photoconductive properties that are virtually always stable without depending on the usage environment, have excellent light fatigue resistance, and exhibit no deterioration phenomenon even after repeated use. To provide a light-receiving member having a light-receiving layer made of a-8L, which has excellent durability and moisture resistance, has no or almost no residual potential, and is easy to manage in production. be.

Another object of the present invention is to provide a light-receiving member having a light-receiving layer made of a-8i, which has high photosensitivity in the entire visible light range, has excellent matching properties with semiconductor lasers, and has a fast photoresponse. It is about providing.

Still another object of the present invention is to provide a light-receiving member having a light-receiving layer composed of a-3i, which has high photosensitivity, high signal-to-noise ratio characteristics, and high electrical voltage resistance.

Another object of the present invention is to have excellent adhesion between a layer provided on a support and the support and between each layer of laminated layers,
A-
An object of the present invention is to provide a light-receiving member having a light-receiving layer made of 8i.

Still another object of the present invention is to be suitable for image formation using coherent monochromatic light, to be free from interference fringe patterns and spots during reversal development, and to be free from image defects even after repeated use over a long period of time. [Structure of the Invention] The present inventors have overcome the above-mentioned problems with conventional light-receiving members and achieved the above-mentioned objects. As a result of extensive research aimed at achieving this goal, we have obtained further knowledge and have completed the present invention based on this knowledge.

That is, the present invention provides a photosensitive layer made of an amorphous material having silicon atoms as a matrix on a support, and containing silicon atoms and at least one selected from oxygen atoms, carbon atoms, and nitrogen atoms. A light-receiving member comprising a light-receiving layer having a surface layer made of an amorphous material, wherein the optical band gap is matched at an interface between the photosensitive layer and the surface layer, and the support The present invention relates to a light-receiving member whose main feature is a body surface having an uneven shape formed by a plurality of spherical trace depressions.

By the way, the findings obtained by the present inventors as a result of intensive research are summarized below.

That is, in a light-receiving member equipped with a light-receiving layer having a surface layer and a photosensitive layer on a support, the optical band gap of the surface layer and the surface When the layer is configured to match the optical band gap of the photosensitive layer on which it is directly provided, reflection of incident light at the interface between the surface layer and the photosensitive layer is prevented, and layer thickness unevenness or unevenness during the formation of the surface layer is prevented. /And the problems of interference patterns and sensitivity unevenness caused by layer thickness unevenness due to wear of the surface layer can be solved.

In addition, in a light-receiving member having a plurality of layers on a support, the problem of interference fringes that appear during image formation can be solved by providing the surface of the support with irregularities formed by a plurality of spherical trace depressions. be.

By the way, the latter finding is based on facts obtained through various experiments attempted by the present inventors.

This will be explained below using drawings to facilitate understanding.

FIG. 1 is a schematic diagram showing the layer structure of a light-receiving member 100 according to the present invention. A light-receiving member comprising a photosensitive layer 102 and a surface layer 103 is shown.

FIGS. 2 and 3 are diagrams for explaining how the problem of interference fringes is solved in the light-receiving member of the present invention.

FIG. 6 is an enlarged view of a part of a conventional light-receiving member in which a multilayer light-receiving layer is deposited on a support whose surface is regularly roughened. In the figure, 501 is a photosensitive layer;
502 is a surface layer, 303 is a free surface, and 604 is an interface between the photosensitive layer and the surface layer. As shown in Fig. 6, when the surface of the support is simply roughened regularly by means such as cutting, the light-receiving layer is usually formed along the uneven shape of the surface of the support. The sloped surface of the unevenness on the body surface and the sloped surface of the unevenness on the photoreceptive layer are in a parallel relationship.

Due to this, for example, in a light-receiving member whose light-receiving layer has a multilayer structure consisting of two layers, the photosensitive layer 301 and the surface layer 602, the following problems regularly occur. evoked. That is, the interface 30 between the photosensitive layer and the surface layer
4 and the free surface 303 are in a parallel relationship, the interface 6
The reflected light R1 at 04 and the reflected light R2 at the free surface coincide in direction, and interference fringes are generated depending on the layer thickness of the surface layer.

FIG. 2 is an enlarged view of a part of FIG. 1. As shown in FIG. 2, the light-receiving member of the present invention has an uneven shape formed by a plurality of minute spherical trace depressions on the surface of the support. The light-receiving layer thereon is deposited along the uneven shape. Interface 204 between layer 201 and surface layer 202 and free surface 2
03 are each formed in an uneven shape with spherical trace depressions along the uneven shape of the surface of the support. The curvature of the spherical trace depression formed at the interface 204 is R1, and the free surface 203
If the curvature of the spherical trace depression formed in is R2, then R1
and R2 and l'1. Since R+\R2, the light reflected at the interface 204 and the light reflected at the free surface 203 have different reflection angles, that is, θ1 and θ2 in FIG.
1\θ2 has a different direction, and 1 shown in Fig. 2
1.12.13, the wavelength shift expressed as 11+12-13 is not constant but changes,
Shearing interference corresponding to the so-called Newton's ring phenomenon occurs, and the interference fringes become dispersed within the depression. As a result, even if interference fringes appear microscopically in the image appearing through such a light-receiving member, they are of such a degree that they cannot be visually perceived.

In other words, the use of a support having such a surface shape is for a light-receiving member having a multi-layered light-receiving layer formed thereon, and the light that has passed through the light-receiving layer is transmitted to the layer interface and the support. The light of the present invention efficiently prevents the formed image from becoming striped due to reflection on the surface and interference, and leads to obtaining a light-receiving member capable of forming an excellent image. The curvature R and width of the uneven shape due to the spherical trace depressions on the support surface of the receiving member are important factors in order to efficiently achieve the effect of preventing the occurrence of interference fringes in the light receiving member of the present invention. It is. As a result of various experiments conducted by the present inventors, the following points were discovered. That is, when the curvature R and the width satisfy the following formula: % formula %, 0.5 or more Newton rings due to shearing interference are present in each trace depression. Furthermore, if the following formula: % formula % is satisfied, one or more Newton rings due to shearing interference will exist in each trace depression.

For this reason, in order to prevent interference fringes from occurring in the light receiving member by dispersing the interference fringes that occur throughout the light receiving member into each trace depression, the above p should be set to 0.035.
, preferably 0.055 or more.

In addition, the width of the unevenness due to the trace depression is at most 500
It is desirable that the thickness be about .mu.m, preferably 200 .mu.m or less, more preferably 100 .mu.m or less.

The light-receiving layer of the light-receiving member of the present invention provided on a support having a specific surface shape as described above includes a photosensitive layer and a surface layer, and the photosensitive layer is made of an amorphous material containing silicon atoms as a matrix; Particularly preferably silicon atoms (Sl),
Amorphous material containing at least one of a hydrogen atom (H) or a halogen atom (X) [hereinafter referred to as r a-8i (
H, X) Written as J. ], or is composed of a-8i(H,X) containing at least one selected from oxygen atoms, carbon atoms, and nitrogen atoms, and the
Preferably, the layer further contains a substance that controls conductivity. The second layer may have a multilayer structure, and particularly preferably includes a charge injection blocking layer containing a substance that controls conductivity and/or a so-called barrier layer made of an electrically insulating material. It is included as one of the constituent layers.

Further, the surface layer is made of an amorphous material containing silicon atoms and at least one selected from oxygen atoms, carbon atoms, and nitrogen atoms, particularly preferably silicon atoms (S
l), at least one type selected from oxygen atom (0), carbon atom (C) and nitrogen atom (N), and hydrogen atom (
H) and at least one of a halogen atom (X) [hereinafter referred to as [a-si(o
, c, N) (H, X) J. ].

Regarding the production of the photoreceptive layer of the present invention, in order to efficiently achieve the above-mentioned object of the present invention, it is necessary to control the layer thickness at an optical level. Vacuum deposition methods such as the brating method are usually adopted, but in addition to these methods, photo-CVD methods and thermal CVD methods are also used.
Laws, etc. may also be adopted.

Hereinafter, the specific structure of the light receiving member of the present invention will be explained in detail with reference to FIG. 1, but the present invention is not limited thereto.

FIG. 1 is a diagram schematically showing the layer structure of the light-receiving member of the present invention, in which 100 is the light-receiving member, 101 is the support, 102 is the photosensitive layer, 103 is the surface layer, 104 represents the free surface.

Support The support 101 in the light-receiving member of the present invention has irregularities on its surface that are finer than the resolution required for the light-receiving member, and the irregularities are formed by a plurality of spherical trace depressions.

Examples of the shape of the surface of the support and a preferable manufacturing method thereof will be explained in detail below with reference to FIGS. 4 and 5, but the shape of the support in the light receiving member of the present invention and the manufacturing method thereof are limited by these It is not something that will be done.

FIG. 4 schematically shows a typical example of the shape of the surface of the support in the light-receiving member of the present invention, partially enlarging a part of the uneven shape. In Figure 4, 40
1 is a support body, 402 is a support surface, 403 is a rigid true sphere,
404 indicates a spherical trace depression.

Furthermore, FIG. 4 also shows one example of a preferred manufacturing method for obtaining the surface shape of the support. In other words, it is shown that a spherical depression 404 is formed by allowing a rigid true sphere 403 to naturally fall from a position at a predetermined height above the support surface 402 and collide with the support surface 402 . Then, by using a plurality of rigid true spheres 403 having approximately the same diameter R' and dropping them simultaneously or sequentially from the same height h, approximately the same curve y$ is created on the support surface 402. R
A plurality of spherical trace depressions 404 having the same width can be formed.

FIG. 5 shows some examples of the curved shape of a support having an uneven shape formed by a plurality of spherical trace depressions on its surface as described above.

In the example shown in FIG. 5(A), the surface 502 of the support 501
A plurality of spheres 505.5 with approximately the same diameter are placed in different parts of the
03. ... is regularly dropped to approximately the same height to form a plurality of trace depressions 6 with the same curvature and approximately the same width.
04.604. ... are formed densely so as to overlap each other to form a regularly uneven shape. In this case, the depressions 504, 504., which overlap with each other.・・・
In order to form a
It goes without saying that it is necessary to allow the objects to fall naturally.

In the example shown in FIG. 5(B), two types of spheres 503, 503', . . . having different diameters are dropped from approximately the same height or different heights, and
02, a plurality of depressions 504 with two types of curvature and two types of width.
, 504', . . . are formed densely so as to overlap each other, thereby forming irregularities with irregular heights on the surface.

Furthermore, FIG. 5(C) (front view and cross-sectional view of the support surface)
In the example shown in , a plurality of spheres 503, 503 . ... is irregularly dropped from approximately the same height, and a plurality of depressions 504.504° ... having approximately the same curvature and multiple types of widths are formed so as to overlap with each other, thereby creating an irregular shape. It has an uneven surface.

As described above, by dropping a rigid true sphere onto the support surface, it is possible to form an uneven shape with spherical trace depressions, but in this case, the diameter of the rigid true sphere, the height at which it is dropped,
By appropriately selecting various conditions such as the hardness of the rigid true sphere and the surface of the support, or the amount of spheres to be dropped, a plurality of spherical trace depressions having a desired curvature and width can be formed on the surface of the support.
It can be formed with a predetermined density.

That is, by selecting the above-mentioned conditions, the height of the unevenness and the pitch of the unevenness formed on the surface of the support can be freely adjusted according to the purpose, and the support having the desired unevenness on the surface can be adjusted. Obtainable.

In order to make the support of the light-receiving member have an uneven surface, a method has been proposed in which cutting is performed using a diamond cutting tool using a lathe, milling machine, etc., and this method is effective for this purpose. However, this method requires the use of cutting oil, the removal of chips that inevitably occur during cutting, and the removal of cutting oil that remains on the cutting surface, resulting in complicated processing. However, in the present invention, since the uneven surface shape of the support is formed by spherical trace depressions as described above, the above-mentioned problems can be completely eliminated and the desired uneven surface shape can be obtained. supports can be produced efficiently and easily.

The support 101 used in the present invention may be conductive or electrically insulating. As the conductive support, for example, NiCr.

Stainless steel, AI! , Cr, Mo, Au5Nb, Ta.

Examples include metals such as V, Ti, Pt, and Pb, and alloys thereof.

Examples of the electrically insulating support include films or sheets of synthetic resins such as polyester, polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, and polyamide, glass, ceramic, and paper. . It is preferable that at least one surface of these electrically insulating supports is conductively treated, and a light-receiving layer is provided on the conductively treated surface side.

For example, if it is glass, NiCr is applied to its surface.

Al, Cr, Mo, Au, Ir, Nb, T
aXV, Ti, Pt, Pd, In2O5,5
Conductivity can be imparted by providing a thin film made of n02, ITO (In205+5n02), etc., or if it is a synthetic resin film such as a polyester film, NiC
r, AA'SAg, Pb.

Zn, %Ni5Au, Cr, Mo, Ir, N
b, Ta, V.

A thin film of metal such as Ti or PT is provided on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or the surface is laminated with the metal to impart conductivity to the surface. The shape of the support body can be any shape such as cylindrical shape, belt shape, plate shape, etc., but depending on the use and desired,
Its shape can be determined as appropriate. For example, if the light-receiving member 100 of FIG. 1 is used as an electrophotographic imaging member, in the case of continuous high-speed copying,
It is desirable to have an endless belt shape or a cylindrical shape. The thickness of the support is determined appropriately so as to form the desired light-receiving member, but if the light-receiving member is required to have recovery properties, the thickness of the support may be determined within a range that allows the support to fully exhibit its function. can be made as thin as possible. However, in terms of manufacturing and handling of the support, mechanical strength, etc., usually
It is assumed to be 10μ or more.

Next, when the light-receiving member of the present invention is used as a light-receiving member for electrophotography, an example of an apparatus for manufacturing the surface of the support will be explained using FIG. 6(A) and FIG. However, the present invention is not limited thereto.

Supports for electrophotography and light-receiving materials are made by extruding an aluminum alloy or the like to form boathole tubes or mandrel tubes, and then heat-treating or heat-treating the resulting tubes as necessary. A cylindrical (cylindrical) base that has been subjected to treatment such as heat refining is used, and a sixth
(B) Using the manufacturing apparatus shown in the figure, an uneven shape is formed on the surface of the support.

Examples of the spheres used to form the above-mentioned uneven shape on the surface of the support include various rigid spheres made of metals such as stainless steel, aluminum, steel, nickel, and brass, ceramics, and plastics. Rigid spheres made of stainless steel and steel are preferred for reasons such as low cost and cost reduction. And the hardness of such a sphere is
The hardness of the support may be higher or lower than that of the support, but if the sphere is to be used repeatedly, it is desirable that the hardness be higher than that of the support.

6th Prisoner, Figure 6(B) is a schematic cross-sectional view of the entire manufacturing equipment hF
), 6o1 is an aluminum cylinder for making a support, and the surface of the cylinder 601 may be finished in advance to an appropriate degree of smoothness.

The cylinder 601 is supported by a rotating shaft 602, and is driven by an appropriate driving means 603 such as a motor.
It is rotatable approximately around an axis. The rotation speed is appropriately determined and controlled in consideration of the density of the spherical trace depressions to be formed, the amount of rigid spheres supplied, and the like.

604 is a dropping device for allowing the rigid true sphere 605 to fall naturally; a ball feeder 606 is used to store the rigid true sphere 605 and drop it; it is swung so that the rigid true sphere 605 falls easily from the feeder 606; Vibrator 60
7. A recovery tank 608 for collecting the rigid true spheres 605 that collide with the cylinder and fall, a pole feeding device 609 for transporting the rigid true spheres 605 collected in the recovery tank 608 to the feeder 606, and a feeding system. A cleaning device 610 and a cleaning device 61 for cleaning the rigid true sphere with liquid midway through the device 609
It is comprised of a liquid reservoir 611 for supplying cleaning liquid (solvent, etc.) to the 0 through a nozzle or the like, a recovery tank 612 for recovering the liquid used for cleaning, and the like.

The amount of rigid true spheres that naturally fall from the feeder 606 is adjusted as appropriate depending on the degree of opening and closing of the drop port 613, the degree of vibration caused by the vibrator 607, and the like.

Photosensitive layer In the light-receiving member of the present invention, the photosensitive layer 102 is provided on the above-mentioned support 101, and is a-sl (
H,X) or a-8i(H,X) containing at least one selected from oxygen atoms, carbon atoms, and nitrogen atoms
It preferably contains a substance that roughly controls conductivity.

The halogen atom (X) contained in the photosensitive layer is as follows:
Specific examples include fluorine, chlorine, bromine, and iodine, with fluorine and chlorine being particularly preferred. Hydrogen atoms (H) that can be contained in the photosensitive layer 102
The amount of halogen atoms (X) or the sum of the amounts of hydrogen atoms and halogen atoms (H+X) is usually 1 to 40 a
The atomic L is preferably 5 to 30 atomic %.

Furthermore, in the light-receiving member of the present invention, the layer thickness of the photosensitive layer is
This is one of the important factors to efficiently achieve the object of the present invention, and it is necessary to pay sufficient attention when designing the light-receiving member so that the desired characteristics are imparted to the light-receiving member. Ashi, usually 1 to 100μ, preferably 1 to 80μ
μ, preferably 2 to 50 μ.

By the way, the photosensitive layer of the light receiving member of the present invention contains oxygen atoms,
The purpose of containing at least one selected from carbon atoms and nitrogen atoms is mainly to increase the photosensitivity and dark resistance of the light-receiving member and to improve the adhesion between the support and the photosensitive layer.

In the photosensitive layer of the present invention, when at least one selected from oxygen atoms, carbon atoms, and nitrogen atoms is contained, it is contained in a uniform distribution state in the layer thickness direction, or in a non-uniform distribution state in the layer thickness direction. The state in which it is contained depends on the above-mentioned objectives and expected effects, and therefore the amount to be contained also differs.

That is, when the purpose is to increase the photosensitivity and dark resistance of a light-receiving member, carbon atoms and oxygen atoms contained in the photosensitive layer are contained in a uniform distribution over the entire layer area of the photosensitive layer. The amount of at least one selected from nitrogen atoms and nitrogen atoms may be relatively small.

In addition, when the purpose is to improve the adhesion between the support and the photosensitive layer, it may be contained uniformly in a part of the layer area at the support side end of the photosensitive layer, or it may be added to the support side end of the photosensitive layer. In this case, at least one selected from carbon atoms, oxygen atoms, and g atoms is contained in a distribution state such that the distribution concentration thereof is high; in this case, the oxygen atoms, carbon atoms, and nitrogen atoms contained in the photosensitive layer are The amount of at least one selected from among these is made relatively large in order to ensure improved adhesion to the support.

In the light-receiving member of the present invention, the amount of at least one selected from oxygen atoms, carbon atoms, and nitrogen atoms to be contained in the photosensitive layer may be determined in addition to considering the properties required for the photosensitive layer as described above. It is determined by taking into consideration the organic relationship such as the characteristics at the contact interface with the body, and is usually 0.001 to 50 atomic%.
, preferably 0.002 to 40 atomic%, optimally 0.005 to 30 atomic%.

By the way, if it is contained in the entire layer area of the photosensitive layer, or if the ratio of the layer thickness of a part of the layer area to which it is contained is large in the layer thickness of the photosensitive layer, the above-mentioned upper limit of the amount to be included may be reduced. be made into That is, in that case, for example, when the layer thickness of the layer region to be contained is 100 times the layer thickness of Photosensitive J-, the amount to be contained is usually 3°ato
mic% or less, preferably 20 atom1c% or less,
Optimally, it is set to 10 atomic% or less.

Next, the amount of at least one selected from oxygen atoms, carbon atoms, and nitrogen atoms to be contained in the photosensitive layer of the present invention is
The amount is relatively large on the support side, decreases from the end on the support side to the end on the surface layer side, and becomes a relatively small amount or substantially less near the end on the surface layer side of the photosensitive layer. Some typical examples in which the distribution is made to be close to zero will be explained with reference to FIGS. 7 to 15. However, the present invention is not limited to these examples. Hereinafter, at least one selected from carbon atoms, oxygen atoms, and nitrogen atoms will be referred to as "atoms (0, C,
N) Written as J.

In Figures 7 to 15, the horizontal axis shows the distribution concentration C of atoms (0, C, N), the vertical axis shows the layer thickness of the photosensitive layer, LB shows the interface position between the support and the photosensitive layer, and tT The position of the interface between the photosensitive layer and the surface layer is shown.

Figure 7 shows atoms (0°C, N) contained in the photosensitive layer.
The first typical example of the distribution state in the layer thickness direction is shown. In this example, from the interface position fM, tB between the photosensitive layer containing atoms (0, C, N) and the support to the position t1, atoms (0, C, N) are present.
The distribution concentration C of C, N) takes a constant value C1, and the position L
From 1 to the interface position tT with the surface layer, atoms (0, C, N
) distribution concentration C continuously decreases from concentration C2, and at position t
, the distribution concentration of atoms (0, C, N) is C3.

In another typical example shown in FIG. 8, the distribution concentration C of atoms (0, C, N) contained in the photosensitive layer decreases continuously from the concentration C4 from position tB to position tT. ,
At position tT, the concentration becomes C5.

In the example shown in FIG. 9, the distribution concentration C of atoms (0, C, N) maintains a constant value of concentration C6 from position tB to position t2, and from position t2 to position tA, the distribution concentration C of atoms (0, C, N) maintains a constant value of concentration C6. ，
The distribution concentration C of atoms (0, C, N) gradually and continuously decreases from the concentration C7, and at the position tT, the distribution concentration C of atoms (0, C, N) becomes substantially zero.

In the example shown in FIG. 10, the distribution concentration C of atoms (0, C, N) gradually decreases from the concentration C8 from position tB to position tT, and at position 1T, the distribution concentration C of atoms (○
, C, N) is substantially zero.

In the example shown in FIG. 11, the distribution 1 degree C of atoms (○, C, N) is equal to the concentration C between the position fIttB and the position t3.
9, and from position t3 to position fitT, it decreases in a -order scale from the concentration C9 to the concentration COO.

In the example shown in FIG. 12, the distribution concentration C of atoms (0, C, N) is constant at the concentration CN from position LB to position t4, and from position t4 to υ position 1T. It decreases linearly from the concentration C12 to the concentration C15.

In the example shown in FIG. 13, the distribution concentration C of atoms (0, C, N) decreases linearly from the concentration C14 to substantially zero in the trench from position LB to position tT.

In the example shown in FIG. 14, the distribution concentration C of atoms (0, C, N) decreases linearly from the position tflt, tB to the position t5, from the concentration C15 to the concentration CI6,
From position L5 to position tT, the concentration C16 is maintained at a constant value.

Finally, in the example shown in FIG. 15, the distribution concentration C of atoms (0, C, N) is C17 at position 1, and from position t5 to position t6, it decreases slowly from the concentration C17. Then, it decreases rapidly near position t6, and at position t
6, the concentration becomes C1[1. Next, from position t6 to position t
Up to 7, the concentration decreases rapidly at first, and then gradually decreases, and reaches the concentration C1 at position t7. Further, between the position t7 and the position L8, the concentration gradually decreases very slowly, and reaches the concentration C20 at the position t8. Furthermore, from position t8 to position tT, the concentration gradually decreases from C20 to substantially zero.

As in the examples shown in FIGS. 7 to 15, the end of the photosensitive layer on the support side has a portion with a high distribution concentration C of atoms (0, C, N), and the end of the photosensitive layer on the surface layer side In the case where the distribution concentration C has a considerably low part or has a part with a concentration substantially close to zero, atoms (0, C, N ) is provided, preferably a localized region having a relatively high distribution concentration of
By providing the thickness within μ, it is possible to more efficiently improve the adhesion between the support and the photosensitive layer.

The localized region may be the entire partial layer region of the support-side end of the photosensitive layer containing atoms (0, C, N),
Alternatively, it may be a part of it, and which one to use is determined as appropriate depending on the characteristics required of the photosensitive layer to be formed.

The amount of atoms (0, C, N) contained in the localized region is such that the maximum value of the molecular concentration C of atoms (0, C, N) is 500ato
micppm or more, preferably 800 azomic
ppm or more, optimally 1000 atomic ppm
It is desirable to have a distribution state as described above.

Further, in the light-receiving member of the present invention, the photosensitive layer may contain a substance for controlling conductivity in the entire layer region or in a part of the layer region in a uniform or non-uniform distribution state.

Examples of the substance that controls conductivity include so-called impurities in the semiconductor field, and atoms belonging to group m of the periodic table (hereinafter simply referred to as ``group m'' of the periodic table) that provide P-type conductivity.
"group atoms". ), or atoms belonging to Group ■ of the periodic table that provide n-type conductivity (hereinafter simply referred to as "Group ■ atoms").
0) is used. Specifically, as m-group atoms,
B (boron), Al (aluminum), Ga (gallium), In (indium), Tl (thallium), etc. can be mentioned, but B5Ga is particularly preferred. Group III atoms include P (phosphorus), As (arsenic),
Examples include sb (antimoy) and Bi (bismane), but particularly preferred are p and sb.

When the photosensitive layer of the present invention contains group (III) atoms or group (III) atoms, which are substances that control conductivity, whether to contain them in the entire layer region or in some layer regions will be described later. As such, the amount to be included will vary depending on the purpose or expected effect.

That is, when the main purpose is to control the conductivity type and/or conductivity of the photosensitive layer, it is contained in the entire layer area of the photosensitive layer. The amount may be relatively small, typically 1x10 to 1x
10 atomic ppm, preferably 5×1
0-5x102102ato ppm, optimally 1x1
0 to 2x10 at, omicppm.

In addition, the group (I) atoms or the group (V) atoms may be contained in a uniform distribution state in a part of the layer region in contact with the support, or the distribution concentration of the group (I) or group (IV) atoms in the layer thickness direction may be In the case where they are contained at a high concentration on the side in contact with the support, such group (III) atoms or some layer regions containing group (III) atoms or regions containing them at a high concentration may be used as a charge injection blocking layer. It becomes a functioning place. In other words, when the group Ⅰ atoms are contained, when the free surface of the photoreceptive layer is subjected to polar charging treatment, the movement of electrons injected from the support side into the photoreceptor layer is made more efficient. In addition, when the group Ⅰ atoms are contained, when the free surface of the photoreceptive layer is charged to e polarity, it is injected from the support side into the photoreceptor layer. The movement of holes can be more efficiently blocked.

The content in this case is relatively large. Specifically, generally 30 to 5 X 10' atomic
ppm, preferably 50 to I x 10' a
t, omicppm1 optimally lX102~5 x 1
0S atomic ppm. In order to efficiently exhibit this effect, if the layer thickness of a part of the layer region or the layer region containing a high concentration is t, and the layer thickness of the other photosensitive layer is to, then 1/1+1 ．． It is desirable that the relational expression ≦0.4 holds true, more preferably the value of the relational expression is 0.65 or less, most preferably 0.3 or less. Further, the layer thickness of the layer region is generally 3 x 10 to 10μ, preferably 4 x 10 to 8μ.
, optimally 5 x 10-3 to 5μ.

Next, the amount of group m atoms or group In this case, a typical example of distributing group (I) atoms or group V atoms so that the amount is relatively small or substantially close to zero is to distribute oxygen atoms,
This can be explained using examples similar to the examples shown in FIGS. 7 to 15, which illustrate the case where at least one selected from carbon atoms and nitrogen atoms is contained. However, the invention is not limited to these examples.

As shown in the examples shown in FIGS. 7 to 15, the photosensitive layer has a portion with a high distribution concentration C of group (2) atoms or group (2) atoms on the side closer to the support, and on the surface layer side of the photosensitive layer, teeth,
If the distribution concentration C has a part with a considerably low concentration or a part with a concentration substantially close to cello, the distribution a degree of group (I) or group V atoms in the part close to the support side is relatively high. By providing a localized region with a high concentration, preferably within 5 μm from the interface position in contact with the support surface, the distribution concentration of group (III) atoms or group (III) atoms is high. The above-mentioned effect that a certain layer region forms a charge injection blocking layer can be achieved even more efficiently.

As mentioned above, regarding the distribution state of Group ■ atoms or Group ■ atoms,
Although the effects of each have been described individually, in order to obtain a light-receiving member having characteristics that can achieve the desired purpose, the distribution state of these group II atoms or group V atoms and the number of groups to be contained in the photosensitive layer are important. It goes without saying that the amounts of Group (2) atoms or Group V atoms may be used in appropriate combinations as necessary. For example, when a charge injection blocking layer is provided at the end of the photosensitive layer on the support side, what is the resiliency of the substance that controls conductivity contained in the charge injection blocking layer in the photosensitive layer other than the charge injection blocking layer? A substance that controls conductivity of a different polarity may be contained, or a substance that controls conductivity of the same polarity may be contained in an amount much smaller than that contained in the charge blocking layer. .

Furthermore, in the light-receiving member of the present invention, as a constituent layer provided at the end on the support side, instead of the charge injection blocking layer,
A so-called barrier layer made of an electrically insulating material can also be provided, or both the barrier layer and the charge injection blocking layer can be constituent layers. Examples of materials constituting such a barrier layer include inorganic electrically insulating materials such as Al2O3, 5102, 515N4, and organic electrically insulating materials such as polycarbonate.

Surface layer The surface layer 103 of the light-receiving member of the present invention is the photosensitive layer 1 described above.
02 and has a free surface 104. The surface layer contains at least one selected from oxygen atoms (○), carbon atoms (C), and nitrogen atoms (N), and preferably at least one of hydrogen atoms (H) and halogen atoms (x). containing a-8i (hereinafter referred to as ra-
8i (0, C, N) (denoted as H, It functions to improve the characteristics of the receiving member, such as moisture resistance, continuous repeated usage characteristics, electrical pressure resistance, usage environment characteristics, and durability.

In the light receiving member of the present invention, the surface layer 103
At the interface between the surface layer and the photosensitive layer 102, the optical bandgap Eopt of the surface layer and the optical bandgap Eo of the photosensitive layer 102 on which the surface layer is directly provided are determined.
pt must be matched or matched to such an extent that reflection of incident light at the interface between the surface layer 103 and the photosensitive layer 102 can be substantially prevented.

Furthermore, in addition to the above-mentioned conditions, at the end of the surface layer 103 on the free surface side, it is necessary to ensure that a sufficient amount of incident light reaches the photosensitive layer 102 provided below the surface layer. It is desirable that the end of the surface layer 103 on the free surface side is configured to have a sufficiently large optical bandgap Eopt. The optical band gap Eopt is configured to match at the interface between the surface layer 106 and the photosensitive layer 102, and the optical band gap Eopt is made sufficiently large at the end of the surface layer on the free surface side. In this case, the optical band gap of the surface layer is configured to change continuously in the thickness direction of the surface layer.

In order to control the value of the optical band gap EoptO of the surface layer in the layer thickness direction as described above, oxygen atoms (0), carbon atoms (C) and nitrogen atoms (N), which are optical band gap adjustment atoms, are used. This is done by controlling the amount of at least one selected from the following to be contained in the surface layer.

Specifically, at least one type selected from oxygen atoms (0), carbon atoms (C), and nitrogen atoms (N) [hereinafter referred to as "atoms (0,
, N) is written as J. ] is not contained, atoms (0,
The content of atoms (0, C, N) is set to zero or a value close to zero, and the content of atoms (0, C, N) is set to zero or a value close to zero.
), the content of atoms (○, C, N) at the end of the surface layer in contact with the photosensitive layer and the content of atoms (0, C, N) at the end of the photosensitive layer in contact with the surface layer ，
C, N) contents are the same or there is no substantial difference. Then, the amount of atoms (0, C, N) is continuously increased from the end on the photosensitive layer side of the surface layer toward the end on the free surface side, and near the end on the free surface side,
A sufficient amount of atoms (0, C, N) is included to prevent reflection of incident light on the free surface. Some typical examples of the distribution state of atoms (0, C, N) in the surface layer will be explained below with reference to FIGS. 20 to 22, but the present invention is not limited to these examples.

In Figures 16 to 18, the horizontal axis is atoms (0°C, N)
and distribution concentration C1 of silicon atoms. The vertical axis indicates the layer thickness t of the surface layer. In the figure, LTl'i is the interface position between the photosensitive layer and the surface layer, is the free surface position, and the solid line is the atom (0, C,
The broken line shows the change in the distributed concentration of silicon atoms (Sl).

Figure 16 shows atoms (0, C, N) contained in the surface layer.
) and a first typical example of the distribution state of silicon atoms (Si) in the layer thickness direction. In this example, from interface position tT to position t1, the distribution concentration C of atoms (0, C, N) increases linearly from zero to concentration C1, while the distribution concentration of 7-licon atoms is , decreases linearly from the concentration C2 to the concentration C3, and from the position t1 to the position tF, the distribution concentration C of atoms (0, C, N) and silicon atoms is constant at the concentration C1 and concentration C3, respectively. Keep value.

In the example shown in FIG. 17, the distribution concentration C of atoms (0, C, N) is from zero to the concentration C4 from the interface position tT to the position t5.
-! The density C4 increases in a linear function at , and maintains a constant value from the position t5 to the position 1F.

On the other hand, the distribution concentration C of silicon atoms decreases linearly from the concentration C5 to the concentration C6 from the position tT to the position L2, and from the concentration C6 to the concentration C6 from the position t2 to the position t3.
7 in a linear function, and maintains a constant value of concentration C7 from position t3 to position 1F. At the beginning of the formation of the surface layer, when the concentration of silicon atoms is high, the deposition rate is fast, but as in this example, the deposition rate is corrected by reducing the distributed concentration of silicon atoms in two steps. be able to.

In the example shown in FIG. 18, from position tT to position t4,
The distributed concentration of atoms (0, C, N) increases continuously from zero to concentration C8, while the distributed concentration C of silicon atoms (Si) continuously decreases from concentration C9 to concentration Coo,
From position t4 to position 1F, atoms (0, C,
The distributed concentration of N) and the distributed concentration of silicon atoms (Sl) are maintained at constant values of concentration C8 and concentration C10, respectively. As in this example, when the distribution concentration of atoms (0, C, N) is gradually and continuously increased, the rate of change in the refractive index in the thickness direction of the surface layer can be kept approximately constant at #1. .

As shown in FIGS. 16 to 18, the surface layer of the light-receiving member of the present invention has atoms (
A layer in which the distributed concentration of 0, C, N) is substantially close to zero, increases continuously toward the free surface side, and has a relatively high concentration at the end of the surface layer on the free surface side. It is desirable to provide an area. In this case, the layer thickness of the layer region is usually set to 0.1 μm or more in order to function as an antireflection layer and a protective layer.

There is also a small amount of hydrogen atoms or local atoms in the surface layer.
It is desirable to contain one of the two, and the amount of hydrogen atoms (H) or the amount of hydrogen atoms (X) to be contained, or the sum of the amounts of hydrogen atoms and hydrogen atoms (Hx)
is usually 1-40 atomic%, preferably 5-3
0 atomic%, optimally 5-25 atomic
Let's do it.

In addition, in the present invention, the layer thickness of the surface layer is one of the important factors for efficiently achieving the purpose of the present invention, and is determined as appropriate depending on the intended purpose. It is necessary to decide based on mutual and organic relationships depending on the amount of oxygen atoms, carbon atoms, nitrogen atoms,/or hydrogen atoms contained in the layer, or the properties required for the surface layer. be. Furthermore, it is also necessary to consider economic efficiency, which also takes into account productivity and mass production.

For this reason, the thickness of the surface layer is usually 6 x 10-3
~50μ, more preferably 4X10”-3~2
0μ, particularly preferably 5×10”-3 to 10μ.

The light-receiving member of the present invention has the above-described layer structure, so that it can solve all of the problems of the light-receiving member having a light-receiving layer made of amorphous silicon, and in particular, it can solve all of the problems of the light-receiving member having a light-receiving layer made of amorphous silicon. Even when laser light, which is monochromatic light, is used as a light source, the appearance of interference fringes in the formed image due to interference phenomena can be significantly prevented, and a visible image of extremely high quality can be formed.

In addition, the light-receiving member of the present invention has high photosensitivity in the entire visible light range, and is particularly excellent in photosensitivity characteristics on the long wavelength side, so it is particularly excellent in matching with semiconductor lasers, and has a high photoresponsiveness. It exhibits excellent electrical, optical, photoconductive properties, electrical pressure resistance, and use environment properties.

In particular, when applied as a light-receiving member for electrophotography, there is no influence of residual potential on image formation, its electrical characteristics are stable, it is highly sensitive, and it has a high signal-to-noise ratio. As a result, it has excellent light fatigue resistance and repeated use characteristics, and can stably and repeatedly produce high-quality images with high density, clear no-ft tones, and high resolution.

Next, a method for forming the photoreceptive layer of the present invention will be explained.

The amorphous material constituting the photoreceptive layer of the present invention is deposited by a vacuum deposition method that utilizes a discharge phenomenon such as a glow discharge method, a sputtering method, or an ion blasting method. These manufacturing methods are selected and adopted as appropriate depending on factors such as manufacturing conditions, level of equipment capital investment, manufacturing scale, and desired characteristics of the light-receiving member to be manufactured. The glow discharge method or the sputtering method is preferable because it is relatively easy to control the conditions for manufacturing the receiving member, and carbon atoms and hydrogen atoms can be easily introduced together with silicon atoms. be.

Further, the glow discharge method and the sputtering method may be used together in the same apparatus system.

For example, in order to form a layer composed of a-st(H,x) by the glow discharge method, basically hydrogen atoms ( H) A raw material gas for introduction and/or for introduction of halogen atoms (X) is introduced into a deposition chamber whose interior can be made to have a reduced pressure, and a glow discharge is generated in the deposition chamber. a-8i(H,X) on the support surface
form a layer consisting of

As the raw material gas for supplying S1, SiH4,512
Examples include gaseous or gasifiable silicon hydride (silanes) such as H6,5i5HB, Si4H10, etc., and in particular,
In terms of ease of layer formation work and good S1 supply efficiency, S
iH4, S i 2H6 are preferred.

However, as the raw material gas for introducing the halogen atom, there are many halogen compounds, such as halogen gas, halides, interhalogen compounds, and gaseous or gaseous silane derivatives substituted with /% halogen. Preferred are compounds that can be converted into Specifically, fluorine, chlorine,
Bromine, iodine halogen gas, BrF, CIF 5
CIF5, BrF5, BrF5, IF7, ICI,
Interhalogen compounds such as IBr, and SiF4, Si2
Examples include silicon halides such as F6.5IC14 and 5IBr4. When using a gaseous or gasifiable halogen compound as described above, a layer composed of a-8i containing halogen atoms can be formed without separately using a raw material gas for S1 supply. Therefore, it is particularly effective.

Further, as the raw material gas for supplying hydrogen atoms, hydrogen gas, halides such as HF, HCI, HBr, SHL, SiH4,512H6,5i5H6,5i4
H1 (1st grade silicon hydride, or SiH2F2, S
iH2I 2.5iH2cz2.5iHCA's, 5i
Gaseous or gasifiable substances such as halogen-substituted silicon hydrides such as H2Br2.5iHBr5 can be used, and when these raw material gases are used, they are extremely effective in controlling electrical or photoelectric characteristics. This is effective because the content of hydrogen atoms (H) can be easily controlled. When the halogen compound or the halogen-substituted silicon hydride is used, hydrogen atoms (H) are also introduced at the same time as the halogen atoms, which is particularly effective.

In addition, hydrogen atoms contained in the a-Si layer (or
The amount of halogen atoms (X) can be controlled, for example, by controlling the temperature of the support, the amount of hydrogen atoms (H) and/or the starting material used to introduce halogen atoms (X) into the deposition chamber,
This is done by controlling discharge power, etc.

To form a layer consisting of a-8i(H,X) by reactive sputtering or ion blating,
For example, in the case of a sputtering method, a halogen gas may be introduced by introducing a gas of the above-mentioned halogen compound or a silicon compound containing halogen atoms into the deposition chamber to form a plasma atmosphere of the gas.

Further, when introducing hydrogen atoms, a raw material gas for introducing hydrogen atoms, such as H2 or the above-mentioned silane gases, is introduced into the deposition chamber for sputtering to form a plasma atmosphere of the gas. good.

For example, in the case of the reactive sputtering method, an S1 target is used, and a plasma atmosphere is created by introducing a gas for introducing halogen atoms and H2 gas, including an inert gas such as He5Ar as necessary, into the deposition chamber. , a layer of a-Si(H,X) is formed on the support by sputtering the S1 target.

An amorphous material in which a-81 (H, In order to form a layer composed of a quality material, when forming a layer of a-8i (H, The substance, the starting material for introducing oxygen atoms, or the starting material for introducing carbon atoms is the a-8i (H
,

For example, to form a layer or layer region composed of a-8i (H, , when forming the layer composed of a-8i (H, This is done by using them with substances to control their inclusion in the layer being formed.

Specifically, starting materials for the introduction of group Ⅰ atoms include B2H6, B4H1o1B5H9, B2H6, B4H1o1B5H9,
Examples include boron hydride such as 5H111B6H10, B6H12 and B6Hj4, and halogen compounds such as BF3, BCA'5 and BBr3. In addition, AlCl3, C
aCA'5, Ga(CH3)2, InCl3, TlCl
3rd place can also be mentioned.

As starting materials for the introduction of Group Ⅰ atoms, specifically for the introduction of phosphorus atoms, hydrogen north neighbors such as PHI, P2H6, PH,
I, PF5, PF5, PCl3, PCl5, PBr3,
Examples include halogen gases such as PBr3 and PI5. In addition, AsH3, AsF5, AsCl3, AsBr3, A
sF5.5bH5, SbF5, SbF5, 5bC15
, 5bC15, BiH3, BiCA' 5.131Br
5 and the like can also be mentioned as effective starting materials for introducing Group Ⅰ atoms.

When a glow discharge method is used to form a layer or layer region containing oxygen atoms, a starting material for introducing oxygen atoms is added to a material selected as desired from among the starting materials for forming the photoreceptive layer described above. is added. As such a starting material for introducing oxygen atoms, almost any gaseous substance or substance that can be gasified can be used as long as it has at least an oxygen atom as a constituent atom.

For example, a raw material gas whose constituent atoms are silicon atoms (Sl), a raw material gas whose constituent atoms are oxygen atoms (0), and hydrogen atoms (H) or/and halogen atoms (χ) as necessary.
or a raw material gas containing silicon atoms (Sl) and oxygen atoms (○) and hydrogen atoms (H) at a desired mixing ratio. Either the raw material gas containing atoms is mixed at a desired mixing ratio, or the raw material gas containing silicon atoms (SL) and the silicon atoms (Sl), oxygen atoms (
0) and a raw material gas whose constituent atoms are five hydrogen atoms (H) can be used in combination.

Additionally, silicon atoms (Sl) and hydrogen atoms (H)
You may mix and use the raw material gas which has an oxygen atom (0) as a constituent atom with the raw material gas which has a constituent atom.

Specifically, for example, oxygen (02), ozone (05),
-Nitrogen oxide (No), nitrogen dioxide (No2), -nitrogen dioxide (N20), nitrogen sesquioxide (N203), nitrogen tetroxide (N2O4), nitrogen sesquioxide (N2O5), nitrogen dioxide (NO3), silicon atoms ( Sl) and oxygen atoms (
0) and a hydrogen atom (H) as constituent atoms, for example, disiloxane (H5st○5IH3), trisiloxane (
Examples include lower siloxanes such as H5SiO8iH20SiH5).

In order to form a layer or a layer region containing oxygen atoms by sputtering, a monocrystalline or polycrystalline S1 wafer or a 5102 wafer, or a wafer containing a mixture of Sl and 5102 is used as a target. This can be done by sputtering K in various dust atmospheres.

For example, if an SJ wafer is used as a target, the raw material gas for introducing oxygen atoms and optionally hydrogen atoms and/or halogen atoms is diluted with a diluent gas as necessary, and then the source gas is added to the deposition chamber for sputtering. The S1 wafer may be sputtered by introducing these gases into the atmosphere and forming a gas plasma of these gases.

Alternatively, by using Sl and 5i02 as separate targets or by using a single mixed target of Sl and 8102, it is possible to use a sputtering gas in an atmosphere of dilution gas as a sputtering gas or at least hydrogen atoms (H ) or/and by sputtering in a gas atmosphere containing halogen atoms (X) as constituent atoms.

As the raw material gas for introducing oxygen atoms, the raw material gas for introducing oxygen atoms among the raw material gases shown in the glow discharge example described above can be used as an effective gas also in the case of sputtering.

When a glow discharge method is used to form a layer or layer region containing nitrogen atoms, a starting material for introducing nitrogen atoms is added to a starting material selected as desired from among the starting materials for forming the photoreceptive layer described above. Add. As the starting material for introducing nitrogen atoms, almost any gaseous substance or gasifiable substance having at least nitrogen atoms as a constituent atom can be used.

For example, a raw material gas containing silicon atoms (Sl), a raw material gas containing nitrogen atoms (N), and hydrogen atoms (H) or/and rogane atoms (
A raw material gas containing silicon atoms (Sl) and nitrogen atoms (N) and hydrogen atoms (H
) can also be used by mixing with a raw material gas having constituent atoms at a desired mixing ratio.

Additionally, silicon atoms (Sl) and hydrogen atoms (H)
You may mix and use the raw material gas which has a nitrogen atom (N) as a constituent atom with the raw material gas which has a nitrogen atom (N) as a constituent atom.

A starting material that is effectively used as a raw material gas for introducing nitrogen atoms (N) used when forming a layer or layer region containing nitrogen atoms is one that has N as a constituent atom or a mixture of N and H.
For example, nitrogen (N2), ammonia (
NH3), hydrazine (H2NNH2), hydrogen azide G
(N3), gaseous or gasifiable nitrogen such as ammonium azide (NH4N5), nitrogen compounds such as nitrides and azides. In addition to this, nitrogen atoms (
In addition to the introduction of halogen atoms, it is also possible to introduce halokene atoms (X), so nitrogen trifluoride (F5N), nitrogen tetrafluoride (
Examples include halogenated nitrogen compounds such as F4N2).

To form a layer or layer region containing nitrogen atoms by a sputtering method, monocrystalline or polycrystalline Sl waeno-1 or 5i5N4 ueno-1 or Sl and 5i
The sputtering may be carried out by using a wafer containing a mixture of 5N4 as a target and sputtering the wafer in various gas atmospheres.

For example, if an S1 wafer is used as a target, the raw material residue for introducing nitrogen atoms and optionally hydrogen atoms and/or halogen atoms is diluted with a diluting gas as necessary, and the raw material residue is prepared in a deposition chamber for sputtering. The above 81 way...- by forming a gas plasma of these gases
can be sputtered.

Alternatively, 8i and 5i5N4 may be used as separate targets, or a mixed target of Sl and 5i5N4 may be used in an atmosphere of dilution gas as a sputtering gas or at least hydrogen atoms (H
) or/and by sputtering in a gas atmosphere containing halogen atoms (X) as constituent atoms.

As the raw material gas for introducing nitrogen atoms, the raw material gas for introducing nitrogen atoms in the raw material dregs shown in the glow discharge example described above can also be used as an effective gas in the case of sputtering.

In addition, for example, in order to form a layer or a layer region containing carbon atoms by a glow discharge method, a raw material gas containing silicon atoms (Sl) as constituent atoms, a raw material gas containing carbon atoms (C) as constituent atoms, If necessary, a raw material gas containing hydrogen atoms (H) and/or halogen atoms (X) may be mixed at a desired mixing ratio, or a raw material gas containing silicon atoms (Sl) may be used. Gas and carbon atoms (C)
and a raw material gas whose constituent atoms are hydrogen atoms (H) are also mixed at a desired mixing ratio, or a raw material gas whose constituent atoms are silicon atoms (Sl) and a raw material gas whose constituent atoms are silicon atoms (H) are mixed at a desired mixing ratio.
Si), carbon atoms (C), and hydrogen atoms (H) are mixed as constituent atoms, or furthermore, raw material gases containing silicon atoms (Si) and hydrogen atoms (H) as constituent atoms are mixed with carbon atoms. A mixture of raw material gases containing (C) as constituent atoms is used.

To form a layer or layer region composed of a-8iC' (H, This is carried out by sputtering the wafers contained in the wafer in a desired gas atmosphere.

For example, when using an S1 wafer as a target, the source gas for introducing carbon atoms, hydrogen atoms, and/or halogen atoms may be Ar, He, or
Sl
It is sufficient to sputter the wa/S-.

In addition, when using Sl and C as separate targets, or when using a mixed target of Sl and C, a raw material gas for introducing hydrogen atoms and/or halogen atoms is used as a sputtering gas. If necessary, the material may be diluted with a diluting gas, introduced into a deposition chamber for sputtering, and sputtered by forming gas plasma. As the raw material gas for introducing each atom used in the sputtering method, the raw material gas used in the glow discharge method described above can be used as is.

Sl is effectively used as such raw material gas.
SiH4, Si2H6,5i whose constituent atoms are and H
Silicon hydride gas such as silanes (5ilane) such as 5H8, 5i4H4O, saturated hydrocarbons containing C and H as constituent atoms, for example, having 1 to 4 carbon atoms, ethylene hydrocarbons having 2 to 4 carbon atoms, carbon Examples include a few acetylene hydrocarbons.

Specifically, as a saturated hydrocarbon, methane (CH4)
, ethane (C2H6), propane (C5H8), n-butane (11-C4H1o), butane (CsH+2)
, as the ethylene hydrocarbon, ethylene (C2H4)
, propylene (C3H6), butene-1 (CaHs),
Butene-2 (CaHa), inbutylene (C4H8),
Pentene (C5H1o), acetylenic hydrocarbons include acetylene (C2H2), methylacetylene (C
5H4), butyne (C4H6), and the like.

As a raw material whose constituent atoms are Sl, C, and H,
Mention may be made of alkyl silicides such as 5i(CH5)4.81(C2H5)4. In addition to these raw material gases, H
Of course, H2 can also be used as the raw material gas for introduction.

When forming the photosensitive layer and surface layer of the present invention by a glow discharge method, a sputtering method, or an ion blating method, the Group II atoms or Group V atoms or atoms (0 , C, N) is controlled by controlling the gas flow rate and gas flow rate ratio of the starting material introduced into the deposition chamber.

In addition, conditions such as support temperature, gas pressure in the deposition chamber, electric discharge and ξ wire during formation of the photoreceptive layer are important factors in order to obtain a photoreceptive member with desired characteristics. It is selected appropriately taking into account the function of the layer. Furthermore, since these layer formation conditions may differ depending on the type and amount of each of the atoms mentioned above to be contained in the photoreceptive layer, it is necessary to determine them by taking into consideration the type and amount of the atoms to be contained. There is also.

Specifically, the support temperature is usually 50 to 350°C, particularly preferably 50 to 250°C.

The gas pressure in the deposition chamber is usually 0.01 to I Torr, particularly preferably 0.1 to 0.5 Torr. In addition, the discharge power is 0.005 to 5 Q W/ryrtx
Usually it is 2, but preferably 0.01~
30W/bias 2, particularly preferably 0.01-2 QW/
For river use.

However, the specific conditions for layer formation, such as support temperature, radiation time/ξ power, and gas pressure in the deposition chamber, are usually difficult to determine individually.

Therefore, in order to form an amorphous material layer with desired characteristics,
It is desirable to determine optimal conditions for layer formation based on mutual and organic relationships.

By the way, the oxygen atoms contained in the photoreceptive layer of the present invention,
In order to make the distribution state of carbon atoms, nitrogen atoms, group Ⅰ atoms or group Ⅰ atoms, or hydrogen atoms and/or nitrogen atoms uniform, the above conditions must be met when forming the photoreceptive layer. It is necessary to keep it constant.

Further, in the present invention, when forming the photoreceptive layer, the distribution concentration of oxygen atoms, carbon atoms, nitrogen atoms, group (I) atoms, or group (III) atoms contained in the layer is changed in the layer thickness direction. In order to form a photoreceptive layer having a desired distribution state in the layer thickness direction, when using the glow discharge method, oxygen atoms, carbon atoms, crab atoms, or group Ⅰ atoms or group Ⅰ atoms are introduced. appropriately changing the gas flow rate when introducing the starting material gas into the deposition chamber according to the desired rate of change;
Formed while keeping other conditions constant. Specifically, in order to change the gas flow rate, the opening of a predetermined needle valve provided in the middle of the gas flow path system is gradually opened by some commonly used method, such as manually or by an externally driven motor. All you have to do is perform an operation to change it. At this time, the rate of change in the flow rate does not need to be linear; for example, a microcomputer or the like can be used to control the flow rate according to a rate-of-change curve designed in advance to obtain a desired content rate curve.

However, when forming a photoreceptive layer using a sputtering method, the distribution concentration of oxygen atoms, carbon atoms, nitrogen atoms, Group I atoms, or Group V atoms in the layer thickness direction is changed to obtain the desired thickness. To form the distribution state in the layer thickness direction, oxygen atoms, carbon atoms,
A nitrogen atom, a group (I) atom, or a starting material for introducing a group (I) atom is used in a gaseous state, and the gas flow rate when introducing the gas into the deposition chamber is varied according to a desired rate of change.

〔Example〕

Hereinafter, the present invention will be explained in detail according to Examples 1 to 10, but the present invention is not limited thereto.

In each example, the photoreceptive layer was formed using a glow discharge method. FIG. 19 shows an apparatus for manufacturing a light-receiving member of the present invention using a glow discharge method.

1902.1903.1904.1905.19 in the diagram
The gas cylinder 06 is sealed with raw material gas for forming each layer of the present invention, and as an example, 1902 is SiH4 gas (purity 99.999%).
Cylinder 1903 is B2H6 gas diluted with H2 (purity 99.999%, hereinafter referred to as B2H (abbreviated as S/H2)).
Cylinder, 1904 is CH4 gas (99.999% purity)
Cylinder, 1905 is NH3 gas (purity 99.999%)
The cylinder, 1906, is H2 scum (99.999% purity).

In order to flow these gases into the reaction chamber 1901, valves 1922 to 1926 of gas cylinders 1902 to 1906,
Confirm that the leak valve 1935 is closed, and also check the inflow valves 1912 to 1916 and the outflow valve 1917.
~1921, confirm that the auxiliary valves 1932 and 1933 are open, and first open the main valve 1934 to exhaust the reaction chamber 1901 and gas piping. Next, when the vacuum gauge 1936 reads approximately 5 x 10 torr, the auxiliary valves 1932, 1935 and outflow valves 1917-1921 are closed.

An example of forming a light-receiving layer on the base cylinder 1957 will be given. Gas cylinder 1902 Yosu 5IH4 gas,
B2H6/H2 gas is discharged from the gas cylinder 1903 by opening the valves 1922 and 1923, respectively.
The pressures at 27° and 1928 are adjusted to 1 to 9/2, and the inflow valves 1912 and 1913 are gradually opened to allow flow into the mass 70 controllers 1907 and 1908. Subsequently, the outflow valves 1917, 1918, and the auxiliary valve 193
2 is gradually opened to allow gas to flow into the reaction chamber 1901. At this time, the outflow valve 1917 is adjusted so that the ratio of the SiH4 gas flow rate and the B2H6/H2 gas flow rate becomes the desired value.
1918 and the opening of the main valve 1934 while checking the reading on the vacuum gauge 1936 so that the pressure inside the reaction chamber 1901 reaches the desired value. Then, the temperature of the base cylinder 1937 is raised to 50°C by the heating heater 1968.
After confirming that the temperature is set in the range of ~400°C, the power supply 1940 is set to the desired power and the reaction chamber 1 is turned on.
Using a microcomputer (not shown) to generate a glow discharge in 901, the substrate is cylinder 1
First, on 937, a-8i (H,
) to form a photosensitive layer composed of

To form a surface layer on the photosensitive layer, following the above operation, for example, each of SiH4 gas and CH4 gas is diluted with a diluent gas such as He, A, R, H2, etc. as desired. 81H4 gas and CH4 gas are introduced into the reaction chamber 1901 at a gas flow rate of a-3
A surface layer composed of i(H,X) is formed.

When forming the photosensitive layer and the surface layer, the flow rate of the raw material gas is controlled using a microcomputer, etc.
By using a diluent gas together with the raw material gas for each atom introduction, the gas pressure in the reaction chamber 1901 can be stabilized and stable film forming conditions can be ensured.

In addition, it goes without saying that all outflow valves other than the gas outflow valves required when forming each layer are closed.
In addition, when forming each layer, in order to prevent the gas used for forming the previous layer from remaining in the reaction chamber 1901 and in the waste pipe leading from the outflow valves 1917 to 1921 to the reaction chamber 1901, the outflow valve 1917 is closed. - Close 1921 and auxiliary valve 1932.

Opening 1933 and fully opening main valve 1934 to temporarily evacuate the system to a high vacuum is performed as necessary.

Test Example Using an SOS stainless steel rigid true sphere with a diameter of 2 inches, the surface of an aluminum alloy plate cylinder (diameter 60mm, length 298m) was treated to form irregularities using the apparatus shown in Figure 6 above. Ta.

When we investigated the relationship between the diameter R' of the true sphere, the falling height h, and the width of the curvature R1 of the trace depression, we found that the curvature R and width of the trace depression are as follows.
It was confirmed that it is determined by conditions such as the diameter R' of the true sphere and the falling height h. In addition, it is possible to adjust the pitch to a desired pitch by controlling the pitch of the dents (the density of the dents and the pitch of the unevenness), the rotational speed of the cylinder, the number of revolutions, the amount of fall of the rigid sphere, etc. was confirmed.

Example 1 The surface of an aluminum alloy cylinder was treated in the same manner as in the test example to obtain cylindrical AJ supports (cylinder diameters 101 to 106) having Dl and Ω shown in the upper column of Table 1A.

Next, a light-receiving layer was formed on the Al support (sample cliffs 101 to 106) using the manufacturing apparatus shown in FIG. 19 under the conditions shown in Table 1B below. At this time, the gas flow rates of CH4 gas, H2 gas, and SiF4 gas during the formation of the surface layer were automatically adjusted by microcomputer control according to the flow rate change MK shown in FIG.

Furthermore, these light-receiving members were exposed to a wavelength of 780 nm using an image exposure apparatus shown in FIG.

A laser beam with a spot diameter of 80 μm was irradiated to produce an image beam, and development and transfer were performed to obtain an image.

No interference fringe pattern was observed in any of the images obtained, and they were of extremely good quality.

Note that FIG. 20(A) is a schematic plan view schematically showing the entire exposure apparatus, and FIG. 20(B) is a schematic side view schematically showing the entire exposure apparatus. In the figure, 2001? 'i,
Light receiving member, 2002 is semiconductor laser, 2003bf
The θ lens 2004 indicates a polygon mirror.

Next, as a comparison, an aluminum alloy cylinder (I610
7) (Diameter: 60 mm, length: 298 stitches, uneven pitch: 100 μm
A light-receiving member was produced in the same manner as described above using 1 unevenness depth of 3 μm).

When the obtained light-receiving member was observed under an electron microscope, it was found that the support surface, the layer interface of the light-receiving layer, and the surface of the light-receiving layer were parallel to each other. Using this light-receiving member, images were formed in the same manner as described above, and the obtained images were evaluated in the same manner as described above. The results were as shown in the lower column of Table 1A.

Example 2 A photoreceptive layer was formed on an Alt support (cylinders J16101-107) in the same manner as in Example 1, except that the photoreceptive layer was formed according to the layer forming conditions shown in Table 2B.

Note that the boron atoms contained in the photosensitive layer are B2H6/
81F4"v 100 ppm, and the gradation layer was doped with about 200 ppm. Also, the gas flow rates of NH5 gas, 81F4 gas, and H2 gas during the formation of the surface layer are shown in FIG. It was automatically adjusted by microcomputer control according to the flow rate change line.

When an image was formed on the obtained light-receiving member in the same manner as in Example 1, the occurrence of interference fringes in the obtained image was as shown in the lower column of Table 2A.

Examples 3-10 AI support of Example 1 (cylinder l6103-106
) A light-receiving member was produced in the same manner as in Example 1, except that a light-receiving layer was formed thereon according to the layer forming conditions shown in Tables 6 to 10. In each example, the changes in the gas flow rate of the gas used during the formation of the photosensitive layer and the formation of the surface layer were controlled by a microcomputer according to the flow rate change line shown in the flow rate change diagram shown in Table 11. Adjusted automatically. Further, boron atoms to be contained in the photosensitive layer were introduced under the same conditions as in Example 2.

Image formation was performed on the obtained light-receiving member in the same manner as in Example 1.

No interference fringes were observed in any of the images obtained.
And it was of extremely good quality.

Table 11 [Summary of Effects of the Invention] The light-receiving member of the present invention has the above-mentioned layer structure, and thus solves all the problems of the light-receiving member having the light-receiving layer made of amorphous silicon described above. In particular, even when laser light, which is coherent monochromatic light, is used as a light source, the appearance of interference fringes in images formed due to interference phenomena is significantly prevented, and extremely high-quality visible images can be obtained. can be formed.

In addition, the light-receiving member of the present invention has high photosensitivity in the entire visible light range, and is particularly excellent in photosensitivity characteristics on the long wavelength side, so it is particularly excellent in matching with semiconductor lasers, and has a high photoresponsiveness. It exhibits excellent electrical, optical, photoconductive properties, electrical pressure resistance, and use environment properties.

In particular, when applied as a light-receiving member for electrophotography, there is no influence of residual potential on image formation, its electrical characteristics are stable, and it has high sensitivity and a high signal-to-noise ratio. Therefore, it has excellent light fatigue resistance and repeated use characteristics, and can stably and repeatedly produce high-quality images with high density, clear halftones, and high resolution.

[Brief explanation of drawings]

FIG. 1 is a diagram schematically showing an example of the light receiving member of the present invention, and FIGS. 2 and 3 are diagrams for explaining the principle of preventing the generation of interference fringes in the light receiving member of the present invention. Figure 2 is a partially enlarged view showing how interference fringes can be prevented from occurring in a light-receiving member in which irregularities formed by spherical trace depressions are formed on the surface of the support. FIG. 2 is a diagram showing that interference fringes occur in a light-receiving member in which a light-receiving layer is deposited on a regularly roughened support. FIGS. 4 and 5 are schematic diagrams for explaining the uneven shape of the support surface of the light receiving member of the present invention and a method for bursting the uneven shape. FIG. 6 is a diagram schematically showing a configuration example of an apparatus suitable for forming the uneven shape provided on the support of the light-receiving member of the present invention, and FIG. 6(A) is a front view. , 6th C
B) The figure is a longitudinal sectional view. 7 to 15 are diagrams showing the distribution state of at least one selected from oxygen atoms, carbon atoms, and nitrogen atoms, and group (I) atoms or group (III) atoms in the layer thickness direction in the photosensitive layer of the present invention, 16 to 18 are diagrams showing the distribution state of at least one kind selected from oxygen atoms, carbon atoms, and nitrogen atoms in the layer thickness direction in the surface layer of the present invention. In each diagram, the vertical axis is the optical The layer thickness of the receptive layer is shown, and the horizontal axis represents the distribution concentration of each atom. FIG. 19 is an example of a device for manufacturing the light-receiving layer of the light-receiving member of the present invention, and is a schematic explanatory diagram of a manufacturing device using a glow discharge method. FIG. 20 is a diagram illustrating an image exposure apparatus using laser light. 21 to 34 are diagrams showing changes in gas flow rate during the formation of a photoreceptive layer according to the present invention, where the vertical axis represents the gas flow rate and the horizontal axis represents the gas flow rate. Regarding FIGS. 1 to 3, 100... Light receiving member, 101... Support, 102
,201.301...photosensitive layer, 103,202.30
2...Surface layer, 104,203.303...Free surface, 204.504...Interface between the photosensitive layer and surface layer in Figures 4 and 5, 401.501...Support, 402, 502...Support surface, 403°503.505'...Rigid true sphere,
404.504... Regarding the spherical depression in Fig. 6, 601... Cylinder, 602... Rotating shaft, 603
...Driving means, 604...Drop device, 605...
Rigid sphere, 606...Ball feeder, 607...
- Vibrator, 608... Recovery tank, 609... Ball feeding device, 610... Cleaning device, 611... Cleaning liquid reservoir, 612... Cleaning liquid recovery tank, 613... Drop port No. 19 Regarding the diagram, 1901...Reaction chamber, 1902-1906...Gas cylinder, 1907-1911...Mass flow controller, 1912-1916...Inflow pulp, 1917-
1921... Outflow pulp, 1922-1926...
Pulp, 1927-1931...Pressure regulator, 193
2. 1935...Auxiliary pulp, 1934...Main pulp, 1955...Leak pulp, 1936...Vacuum gauge, 1937...Base cylinder, 1938...Heating heater, 1939...Motor, 1940...・・・
Regarding high frequency power supply Figure 20,

Claims (13)

[Claims] (1) A photosensitive layer made of an amorphous material having silicon atoms as a matrix, silicon atoms, oxygen atoms,
A light-receiving member comprising a light-receiving layer having a surface layer made of an amorphous material containing at least one selected from carbon atoms and nitrogen atoms, wherein the photosensitive layer and the surface layer A light-receiving member characterized in that the optical band gap is matched at the interface, and the support surface has an uneven shape formed by a plurality of spherical trace depressions. (2) The light-receiving member according to claim (1), wherein the photosensitive layer contains at least one type selected from oxygen atoms, carbon atoms, and nitrogen atoms. (3) The light-receiving member according to claim (1), wherein the photosensitive layer contains a substance that controls conductivity. (4) Claim No. (1) in which the photosensitive layer has a multilayer structure
The light-receiving member described in 2. (5) The light-receiving member according to claim (4), wherein the photosensitive layer has, as one of its constituent layers, a charge injection blocking layer containing a substance that controls conductivity. (6) The light-receiving member according to claim (4), wherein the photosensitive layer has a barrier layer as one of the constituent layers. (7) The light-receiving member according to claim (1), wherein the plurality of uneven shapes provided on the surface of the support are uneven shapes formed by spherical trace depressions having the same curvature. (8) The light-receiving member according to claim (1), wherein the plurality of uneven shapes provided on the surface of the support are uneven shapes formed by spherical trace depressions having the same curvature and the same width. (9) Claim No. 1, wherein the uneven shape on the surface of the support is an uneven shape due to vestigial depressions of the rigid true spheres obtained by naturally falling a plurality of rigid true spheres onto the surface of the support body. The light-receiving member described in 2. (10) Claim (1) in which the uneven shape on the surface of the support is an uneven shape due to the vestigial depressions of the rigid true spheres obtained by dropping rigid true spheres of approximately the same diameter from approximately the same height.
The light-receiving member described in 2. (11) The curvature R and width D of the spherical trace depression are expressed by the following formula: 0.
The light-receiving member according to claim 1, which has a value satisfying 035≦D/R. (12) The light-receiving member according to claim (11), wherein the width of the spherical trace depression is 500 μm or less. (13) Claim No. 1, wherein the support is a metal body.
) The light-receiving member according to item 1.