JPS627865A - Accumulated film formation device by optical cvd method - Google Patents

Abstract

PURPOSE:To obtain the titled device capable of forming an accumulated film having the excellent characteristics stably efficiently and continuously by providing respectively a light- transmitting plate and a substrate to the notched parts of the upper and lower walls, constituting the inside of a reaction chamber of a smooth surface free from a projected material and providing a simply designed exchange means for the light-transmitting plate. CONSTITUTION:A trapezoidal space B is formed by notching101 an upper wall of the following reaction vessel 1 in a prescribed size which are provided with a reaction chamber A formed by surrounding and closing it with the upper and lower walls and the peripheral walls. A light-transmitting plate 2 is a reversing trapezoid having same size as the space B and tightly stuck in one body on the upper wall of the vessel 1 freely attachably and detachably by fitting a projected part 201 thereof into a fitting recess 102 of the notched part. The following mounting dish 103 is provided to a bottom wall which is recessed and formed in both-end positions of the energy luminous flux 803 generated in a high-energy light gemerating means 8, converged and irradiated downward and both the surface of a substrate 3 and the surface of the lower wall are made to a plane of one body in case of mounting the substrate 3 thereon. A gaseous raw material is fed to the chamber A through a feed pipe 4 and discharged through an exhaust pipe 6. In a period of the exchange of the plate 2, after ascending a cylinder 10 to push up the plate 2 and substituting it with a new plate 2, the new plate 2 is fitted and stuck by descending the cylinder.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical field to which the invention pertains] The present invention relates to a novel deposited film forming apparatus using photochemical vapor deposition. In particular, the present invention relates to a novel apparatus for forming deposited films of high purity and quality using photochemical vapor deposition under low temperature conditions that utilizes photochemical reactions between materials.

[Description of prior art]

Conventionally, an apparatus has been proposed for forming a deposited film on a substrate using a vapor deposition method (hereinafter abbreviated as "optical CVD method") using light. It is equipped with a means for introducing a raw material gas into the reaction vessel and a means for irradiating the raw material gas with high-energy light, and forms a thin film on a substrate placed in the reaction vessel by utilizing a photochemical reaction. .

Conventional photo-CVD devices with such a configuration utilize light energy to decompose the introduced raw material gas and form a deposited film on the substrate. Excimer laser (ex
immer, 1aser) or a low-pressure mercury lamp to form a deposited film of amorphous silicon (hereinafter abbreviated as RA-8iJ) on the substrate installed in the reaction vessel. be.

By the way, in such a photo-CVD device, a deposited film such as A-8I is formed not only on the substrate but also on the inner surface of the light-transmitting plate, which causes the light intensity of the incident light into the reaction vessel to widen. In addition to reducing the rate at which the deposited film is formed on the substrate, it is also extremely problematic that the deposited film that is formed lacks homogeneity. It is difficult to consistently and efficiently obtain a deposited film.

However, several proposals have been made to solve the above-mentioned problem, and they can be broadly divided into (1) applying oil for a vacuum pump to the inner surface of the transparent plate, and (11) periodically coating the inner surface of the transparent plate. A method of removing the deposited film deposited on the inner surface of the light-transmitting plate by etching, and making the light-transmitting window formed by placing the GiO light-transmitting plate into a stack of two light-transmitting plates. However, even if the optical CVD apparatus has such a system in its configuration, there is another layer that is difficult to solve. That is, (i)
Regarding the method described above, organic substances, mainly oil, are brought into the reaction vessel, and as a result, molecules of the organic substances are mixed into the deposited film that is formed. There is a problem in that the resulting deposited film ends up not having the desired characteristics and high quality. Furthermore, in the method (11), an etching gas is required in addition to the film-forming raw material gas, and a gas excitation device (for example, an RF discharge device) is also required to cause the etching reaction. The whole device is
There is a problem in that the apparatus has a complicated structure that combines a photo-CVD method apparatus and an etching apparatus. Furthermore (11D
Regarding this method, during the deposition film forming operation, turbulence often occurs in the flow of the raw material gas in the reaction chamber, and sometimes turbulence occurs, so special adjustment of the flow of the raw material gas is necessary to prevent this. In such cases, turbulence still occurs in the raw material gas flow, and it is difficult to form a uniform deposited film at all times, which poses a problem.

[Purpose of the invention]

The present invention aims to solve the above-mentioned problems in conventional apparatuses for forming deposited films by photo-CVD.

That is, the main object of the present invention is to provide a photo-CVD method that consistently and efficiently forms a deposited film that is uniform, homogeneous, and of high quality and has excellent desired properties. An object of the present invention is to provide a deposited film forming apparatus according to the present invention.

Another object of the present invention is to embed a transparent plate in a notch in the upper wall to make the inner surface of the upper wall a uniform smooth surface without any protrusions, and to form a dish part by cutting out a concave part in the lower wall. To provide a deposited film forming apparatus using the photo-CVD method described above, in which a substrate is installed therein to make the inner surface of the lower wall a uniformly smooth surface, thereby making the reaction chamber a smooth surface without any protrusions. be.

Still another object of the present invention is the above-mentioned deposited film forming apparatus using the photo-CVD method, wherein a cylinder means that moves up and down is attached to the lower wall of the reaction vessel, and the light-transmitting plate is replaced by the operation of the cylinder. Our goal is to provide the following.

[Structure of the invention]

The apparatus for forming a deposited film by the photo-CVD method of the present invention achieves the above-mentioned object, and includes a reaction chamber equipped with a reaction chamber surrounded and sealed by an upper wall, a peripheral wall, and a lower wall; The reaction chamber has a high-energy light generating means installed in the upper part of the container, and the reaction chamber has a raw material gas supply port and a gas exhaust port in the side wall, and the upper wall is cut out to a predetermined size, and the cutout space is transparent. A light plate is removably embedded to form an integral wall with an apparently smooth lower surface, and the lower wall has a concave cutout to form a substrate mounting plate, and when a substrate is placed there, it appears to be flat. It is characterized in that it has a smooth, integral surface, and the interior of the reaction chamber is free of any protrusions.

In the deposited film forming apparatus using the photoCVD method of the present invention, the lower wall of the reaction container extends downwardly to form a vertical cylindrical space whose upper end opens at the center of the substrate mounting dish, and the cylindrical space has a vertical cylindrical space. It has a cylinder that moves up and down by a drive shaft. During film deposition, the cylinder seals the opening and supports the substrate. When replacing the light-transmitting plate, the cylinder rises inside the reaction chamber and lifts the top of the cylinder. The transparent plate is placed on the surface and removed to the upper part of the reaction vessel, and after being replaced with a new transparent plate, it is lowered to embed the transparent plate in a predetermined position, and further lowered to a predetermined position. It is characterized in that it is adapted to support the base body.

The raw material gases used in the deposited film forming apparatus of the present invention are selected and introduced depending on the type of deposited film to be formed, and are introduced singly or in a mixture from a supply source.

Examples of high-energy light used include mercury lamps,
Xenon lamp, carbon dioxide laser, argon ion laser, nitrogen laser, excimer laser, etc.? What is generated from the source is used.

The base body may have any shape such as a plate shape or a belt shape, and its material may be electrically conductive or electrically insulating. The temperature of the substrate does not necessarily need to be heated before film formation, but
Heating may be necessary depending on the type of raw material gas used, film forming conditions, etc. In that case, the substrate is heated by an appropriate heating means, but generally the temperature range is 30°C. The temperature ranges from 450°C to 450°C.

The raw material gases introduced into the reaction chamber are irradiated with high-energy light to cause a photochemical reaction in the raw material gases, causing excitation, decomposition, or polymerization to form a deposited film on the substrate. Although it is not necessarily necessary to actively heat the gas, heating can be done depending on the type of raw material gas. At that time, it is preferable to keep the inside of the reaction system under reduced pressure conditions, but it is of course possible to use normal pressure conditions, and in some cases, it is also possible to keep the reaction system under pressurized conditions.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The deposited film forming apparatus of the present invention using the photo-CVD method having the above configuration will be explained in detail below with reference to embodiments shown in the drawings. Note that the present invention is not limited to the embodiments shown in the drawings.

FIG. 1 is a schematic cross-sectional view of the apparatus for forming a deposited film using the photoCVD method of the present invention, and FIGS. 2 and 3 illustrate the case where a used transparent plate is removed from the apparatus and replaced with a new one. It is a diagram.

In the figure, reference numeral 1 indicates a reaction vessel having a reaction chamber Ae surrounded by an upper wall, a peripheral wall, and a bottom wall. B indicates a trapezoidal space formed by cutting out 101 the upper wall of the reaction vessel 1, and 102 indicates a fitting recess provided in the notch. Reference numeral 2 denotes a light-transmitting plate, which is an inverted trapezoid of the same size as the trapezoidal space B, and has a protrusion 201 that fits into the fitting recess 102. Therefore, the light-transmitting plate 2 is inserted into the trapezoidal space B from the upper part into the fitting recess 102 of the notch 101, and the protrusion 20 thereof
1 is fitted and integrally fixed to the upper wall of the reaction vessel 1 in a detachable manner. The bottom wall of the reaction vessel is illuminated by a high-energy light generating means 8 that generates a rainbow 801, which is focused by a lens system 9 and irradiated downward 801.
It has a mounting plate 103 for the base body 3 which is formed with a concave cut at both end positions of the high-energy light beam 803 to be exposed. The substrate mounting dish 103 is preferably of a size such that when the substrate 3 is placed thereon, the upper surface of the substrate 3 forms an integral smooth surface with the lower wall surface of the reaction vessel 1. Reference numeral 4 denotes a raw material gas supply pipe equipped with a pulp means 5, one end of which opens into the reaction chamber A, and the other end of which communicates with a raw material gas supply source (not shown).

6 is equipped with a pulping means 7, one end of which opens into the reaction chamber A;
The other end is a gas exhaust pipe communicating with a gas exhaust system J5H1i (not shown). Reference numeral 104 denotes an extended hanging wall of the bottom wall of the reaction vessel 1, forming a cylindrical space that opens at the center of the substrate mounting tray 103. 10 has a smooth surface with an operating shaft 11 and heating means? The opening of the substrate mounting plate 103 during film forming operation. It seals and holds the substrate 3, and also warms it if necessary. The operating shaft 11 of the cylinder 10 is connected to a hydraulic or pressure drive device (not shown), and the cylinder 10 is actuated in either the up or down direction by the drive of the device. When replacing the transparent plate 2, the cylinder 10 is placed inside the reaction chamber A as shown in FIG. It rises and pushes the transparent plate 2 up to the top of the reaction container 1. At this time, a substrate-like plate unrelated to film formation and a buffer member made of an elastic material such as rubber are placed on the top surface of the cylinder 10 and the cylinder is raised. The light-transmitting plate 2, which is thus separated and pushed up to the upper part of the reaction vessel 1, is replaced with the prayed one, and then the cylinder 10 is lowered and the new light-transmitting plate is fitted in a predetermined position.

After that, the cylinder 10 is further lowered, the buffer member and the base plate placed on its top surface are removed, and a predetermined base is placed there, and then the cylinder 10 is lowered to its original position. , the substrate is placed on the substrate mounting tray 103.

By the way, the driving means for the cylinder 10 includes other means,
That is, it can be replaced by any suitable means such as Perot or field-through.

The light-transmitting plate 2 can be replaced without using the cylinder means as described above. For example, as shown in FIG. This can also be done by fitting a transparent plate into a predetermined position using the vacuum suction device. In that case, the bottom wall of the reaction vessel 1 can of course be made into an integral structure having the substrate mounting tray 103 by eliminating the extended hanging wall 104 and the cylinder 10 portion.

When a deposited film has been formed on the surface of the substrate 3, in other words, the product is carried out, a new substrate is carried in, and the substrate 3 is removed when the transparent plate 2 is replaced as described above, and the substrate-like plate is carried in. This is carried out using appropriate operating means for external construction.

By the way, in the above-mentioned operations such as replacing the transparent plate 2, carrying out the product, and carrying in the substrate, the supply of raw material gas into the reaction chamber A is stopped when the pulp 5 is closed, and the remaining gas in the chamber is exhausted. tube 6
Needless to say, this is done after removing the filtrate via the .

In addition, in order to change the size of the substrate 3, a wall portion including the extended hanging wall 104 of the substrate mounting tray 103 on the lower wall of the reaction vessel 10 can be attached and detached at a predetermined position 104' of the lower wall. It is also possible to leave it alone and replace it with another lower wall component that forms a substrate mounting tray of a desired size.

Formation of a deposited film using the apparatus of the present invention is performed, for example, as follows. That is, the raw material gases from each raw material gas supply source are premixed so as to have a predetermined composition ratio, and then introduced into the reaction chamber A via the raw material gas supply pipe 4. At the same time, from the high energy light generating means 8, the lens system 9
The source gas in the reaction chamber A is irradiated with the high-energy light focused through the substrate to cause a photochemical reaction to be excited, decomposed, or polymerized, and then placed in the substrate mounting tray 103. A deposited film of, for example, a-8i is formed on the entire surface or desired portions of the substrate 3 whose temperature is adjusted by the heating means of the cylinder 1o.

Thus, according to the deposited film forming apparatus of the present invention, the light-transmitting plate is always maintained to have a sufficient light-transmitting function, and since there are no protrusions in the reaction chamber, the raw material gas can be distributed evenly throughout the system. Because it is possible to irradiate high-energy light to the desired location sufficiently, the photochemical reaction of the raw material gas occurs evenly and densely, and the film thickness is uniform and homogeneous, ensuring excellent desired characteristics at all times. A deposited film having a stable, high quality and desired shape can be formed continuously and efficiently.

[Summary of effects of the invention]

As described above, in the deposited film forming apparatus of the present invention, the reaction chamber is surrounded by a smooth peripheral surface without any protrusions, so that the concentration of the raw material gas in the system does not vary and is constantly maintained. Since uniformity is maintained, the deposited film formed is always uniform and homogeneous.

Further, as described above, the deposited film forming apparatus of the present invention is equipped with a simply designed light-transmitting plate replacement means, so that it is possible to replace the light-transmitting plate?
It is possible to maintain a sufficient light-transmitting function at all times, so the film formation efficiency is extremely high, and deposited film products can be mass-produced.

[Brief explanation of the drawing]

FIG. 1 is a schematic cross-sectional view of the deposited film forming apparatus of the present invention,
FIGS. 2 and 3 are explanatory diagrams when a used light-transmitting plate is removed and replaced with a new one in the device. 1... Entire reaction vessel A... Reaction chamber B... Trapezoidal space 101... Notch 102... Fitting recess 103... Substrate mounting plate 104... Extended hanging wall 104'.・Lower wall free structuring position 2・・
・Transparent plate 201... Fitting protrusion 3... Base
Body 4... Raw material gas supply pipe 5... Valve
6... Gas exhaust pipe 7... Pulp
8... High energy light generating means 801.802.
803... Speed of light 9... Lens system 10... Cylinder 11... Cylinder shaft 12... Buffer member 13.
...Vacuum suction device Figure 1 Figure 2

Claims (2)

[Claims] (1) A reaction vessel including a reaction chamber surrounded and sealed by an upper wall, a surrounding wall, and a lower wall, and a high-energy light generation means installed on the upper part of the reaction vessel, wherein the reaction chamber is A gas supply port and a gas exhaust port are provided on the side wall, and the upper wall is cut out to a predetermined size, and a translucent plate is removably embedded in the cutout space to form an apparently smooth bottom wall. , the lower wall thereof has a concave cutout to form a substrate mounting tray, and when a substrate is placed there, it appears to have a smooth and integral surface, leaving the reaction chamber free of any protrusions. A deposited film forming apparatus using a photo-CVD method, characterized by: (2) the lower wall of the reaction vessel extends downward to form a vertical cylindrical space whose upper end opens at the center of the substrate mounting tray, and the cylindrical space has a cylinder that is moved up and down by a drive shaft;
During the film deposition operation, the cylinder seals the opening and supports the substrate, and when replacing the transparent plate, the cylinder moves up into the reaction chamber and places the transparent plate on the top surface of the reaction chamber. It is detached from the upper part, replaced with a new transparent plate, then lowered to embed the transparent plate in a predetermined position, and further lowered to return to a predetermined position to support the base body. Light C according to claim (1), characterized in that
Deposited film forming device using VD method.