JPS6276729A - Wire bonding apparatus - Google Patents

Wire bonding apparatus

Info

Publication number
JPS6276729A
JPS6276729A JP60216805A JP21680585A JPS6276729A JP S6276729 A JPS6276729 A JP S6276729A JP 60216805 A JP60216805 A JP 60216805A JP 21680585 A JP21680585 A JP 21680585A JP S6276729 A JPS6276729 A JP S6276729A
Authority
JP
Japan
Prior art keywords
wire
lead frame
bonding
gas
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60216805A
Other languages
Japanese (ja)
Inventor
Hiroaki Kobayashi
弘明 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60216805A priority Critical patent/JPS6276729A/en
Publication of JPS6276729A publication Critical patent/JPS6276729A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/787—Means for aligning
    • H01L2224/78703—Mechanical holding means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/787—Means for aligning
    • H01L2224/78743—Suction holding means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To linearly bond a lead frame or the like without lowering temperature by forming predetermined gas flow between position recognizing means and lead frame, semiconductor chip, preventing heat waves from occurring due to heating, eliminating contact of gas flow with bonding wire, thereby stably forming a ball. CONSTITUTION:Positions of a pellet 8 and a lead frame 9 are measured and recognized by a unit 4 to finely regulate the unit 4 and a capillary 2, and an optical axis of the unit 4 is placed directly on next bonding position. In this case, the gas flow of a nozzle 13 is fed under the unit 4 so as not to contact the end of a wire 11. Accordingly, it can prevent heat waves from occurring to recognize the accurate positions of the chip 8 and the frame 9, thereby eliminating the adverse influence to the formation of a ball 10. Then, the unit 4, a nozzle 13, a capillary 2, and an ultrasonic horn 1 are all moved at predetermined distance L, set directly above the bonding position to bond the wire 11 in a predetermined operation. The nozzle 13 injects oxidation preventive gas to prevent the frame from oxidizing and to heat the gas by a heater 15. Thus, the variation in temperatures do not occur in the frame 9 and the retainer 7.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明はソイ１フボンアイング装置に関する。[Detailed description of the invention] [Technical field of invention] TECHNICAL FIELD The present invention relates to a soybean boning device.

〔発明の技術的費用とその問題点〕[Technical costs of inventions and their problems]

従来のワイへ７ボンデイング装置を第４図、第５図に示
す。このワイヤボンディング装置はワイヤの先端にボー
ルを形成するネイルヘッド方式のワイヤボンディングＲ
ｋ’？である。ワイヤ１１はキャピラリ２により挟持さ
れ、キャピラリ２は超音波ホーン１にＪ：り撮動を加え
られてワイヤ１１をボンディングする。トープ−電極３
はボール１０を形成するもので、ワイＡ７１１の先端に
近づ番プることでトーチ電極３どワイヤ１１との間で放
電を発生さｕ１ワイヤ１１の先端を溶解さけ、ボール１
０を形成する。ボンディングされる半導体チップ８およ
びリードフレーム９は、リードフレーム押え７にＪ：り
固定され、ヒータブロック１２により加熱される。半導
体チップ８およびリードフレーム９の位置を認識するた
め位置認識装置４および照明ランプ６が設（プられてい
る。照明ランプ６によりリードフレーム９　Ｊ３よび半
導体チップ８を照射し、その反射光を位置、Ａぶ装置４
ぐ受光して半導体チップ８およびリードフレーム９の位
置を認識する。位置、ぶ識装置４およびキ％ｐピラリ２
（よ相対的距離「が固定されているので、位置認識装置
４による認識位置から相対的距ＭＬだけキレピラリ２を
移動させることにより、正確な位置にボンディングする
ことができる。A conventional Y-7 bonding device is shown in FIGS. 4 and 5. This wire bonding device is a nail head type wire bonding machine that forms a ball at the tip of the wire.
k'? It is. The wire 11 is held between capillaries 2, and the capillaries 2 are moved by the ultrasonic horn 1 to bond the wires 11. Tope-electrode 3
is used to form the ball 10, and by approaching the tip of the wire A711 and pulling it, a discharge is generated between the torch electrode 3 and the wire 11, and the tip of the wire 11 is melted, and the ball 1 is
form 0. The semiconductor chip 8 and lead frame 9 to be bonded are fixed to a lead frame presser 7 and heated by a heater block 12 . A position recognition device 4 and an illumination lamp 6 are provided to recognize the positions of the semiconductor chip 8 and the lead frame 9. The illumination lamp 6 illuminates the lead frame 9 J3 and the semiconductor chip 8, and the reflected light is used to determine the position. , Abu device 4
The positions of the semiconductor chip 8 and the lead frame 9 are recognized by receiving the light. Position, identification device 4 and key %p pillar 2
(Since the relative distance `` is fixed, bonding can be performed at an accurate position by moving the sharp beam 2 by the relative distance ML from the position recognized by the position recognition device 4.

位置を認識すべき半導体チップ８およびリードフレーム
９をヒータブロック１２により加熱するとかげろうが発
生し、そのままでは位置認識装置４の認識に誤差が生ず
ることがある。そのためガス噴射ノズル５を設け、位置
認識装置Ｆｆ４の下部に空気等のガスを吹きつけ、かげ
ろうを消ずようにしている。When the semiconductor chip 8 and lead frame 9 whose positions are to be recognized are heated by the heater block 12, heat generation occurs, and if this continues, errors may occur in the recognition by the position recognition device 4. For this reason, a gas injection nozzle 5 is provided to blow gas such as air to the lower part of the position recognition device Ff4 to prevent the fog from disappearing.

しかしながらこのような従来の装置ではガス噴射ノズル
５からのガスが、電気１−−チ３により溶融しているワ
イヤ１１の先端にもあたり、所定のボール１０が形成で
きないという問題があった。However, in such a conventional device, the gas from the gas injection nozzle 5 also hits the tip of the wire 11 which is being melted by the electricity 1--chi 3, so there is a problem that a predetermined ball 10 cannot be formed.

例えば、ガスがワイヤ１１の先端にあたるとボール１０
が５〜１０％小さくなることが知られている。For example, if the gas hits the tip of the wire 11, the ball 10
is known to be reduced by 5 to 10%.

また従来の装置ではキャピラリ２および電気トーｆ−３
は水平移動しながらボール１０を形成する。In addition, in the conventional device, capillary 2 and electric toe f-3
forms a ball 10 while moving horizontally.

このためワイヤ１１の先端にあたるガスの流速が移動方
向により箕なる。したがって、ガス噴射ノズル５による
ガス流と同じ方向に移′＃Ｊする場合より、ガス流と反
対方向に移動する場合の方がボール１０の直径が小さく
形成され、ボール１０の大きさにばらつきを生ずるとい
う問題があった。Therefore, the flow velocity of the gas at the tip of the wire 11 becomes smaller depending on the direction of movement. Therefore, the diameter of the ball 10 is smaller when the ball moves in the opposite direction to the gas flow than when the ball moves in the same direction as the gas flow from the gas injection nozzle 5, and variations in the size of the ball 10 are reduced. There was a problem that occurred.

また従来の装置では、放電によりボール１０を形成りる
場合にボール１０の酸化を防止するため、および加熱さ
れたリードフレーム９の酸化を防止するために、電気１
〜−チ３周囲やリードフレーム９周囲を不活性ガス雰囲
気にする場合がある。しかしながらこの不活性ガスによ
りボール１０やリードフレーム９およびリードフレーム
押え等が冷ＩＪＩされ、所定混臥をＩＣＪるのが回付で
あるという問題があった。Further, in the conventional device, in order to prevent oxidation of the ball 10 when forming the ball 10 by electric discharge and to prevent oxidation of the heated lead frame 9, an electric current is used to prevent the ball 10 from being oxidized.
There are cases where an inert gas atmosphere is created around the chip 3 and the lead frame 9. However, this inert gas causes the ball 10, lead frame 9, lead frame holder, etc. to be subjected to cold IJI, and there is a problem in that it is ICJ to carry out a predetermined amount of mixing.

（発明の目的） 本発明の１，１的はかげろうの発生を防止し、かつ安定
したボールを形成できるワイヤボンディング装置を提供
することにある。(Objects of the Invention) One object of the present invention is to provide a wire bonding device that can prevent the occurrence of heat wax and form a stable ball.

本発明の他の目的はボンディングされるリードフレーム
等の温度を低下させることなく酸化を防止できるワイヤ
ボンディング装置を提供することにある。Another object of the present invention is to provide a wire bonding apparatus that can prevent oxidation without lowering the temperature of a lead frame or the like to be bonded.

〔発明の概要〕[Summary of the invention]

上記目的を達成するため、本発明によるワイヤボンディ
ング装置は、位置認識手段とリードフレームおよび半導
体ブップとの間の空間に所定のガス流を形成して、加熱
によるかげろうの発生を防止するガス噴射手段を備え、
このガス噴射手段ににるガス流がボンディングワイヤに
触れないようにしたことを特徴とする。In order to achieve the above object, the wire bonding apparatus according to the present invention provides a gas injection means for forming a predetermined gas flow in a space between a position recognition means and a lead frame and a semiconductor bump to prevent generation of heat wax due to heating. Equipped with
The present invention is characterized in that the gas flow flowing through the gas injection means is prevented from touching the bonding wire.

まｌζ本発明ににるワイへ７ボンデイング装置は、リー
ドフレーＩ＼および半導体デツプに対して、加熱された
酸化防止用ガスを噴ＣＪ　７Ｉる酸化防止用ガス噴Ｑ・
１手段を尚えたことを特徴とする特〔発明の実施例） 本発明の一実施例によるワイヤボンディング装置を第１
図、第２図に示す。第４図、第５図と同一の構成要素に
は同一・の符号を付しその説明を省略する。本実施例で
はかげろう防止用のガス噴）１ノズル１３を位置認識装
置４および超音波ホール１と連結し、全体がその相対的
位置関係を変えないで水平移１Ｆｌｌする。そしてガス
噴射ノズル１３にＪ、り噴射するガスは、位置認識装置
４とリードフレーム９および半導体ペレット８との間を
通るように１−る。かつ、この噴射ガスｔより１／ピラ
リ２や電気トーチ３の方向には流れない方向に設定され
る。噴射するガスとしては空気、窒素、不活性ガス等を
用いる。The bonding device according to the present invention sprays heated anti-oxidant gas onto the lead flake I and the semiconductor depth.
[Embodiment of the Invention] A wire bonding apparatus according to an embodiment of the present invention is provided as a first embodiment of the present invention.
As shown in Fig. 2. Components that are the same as those in FIGS. 4 and 5 are given the same reference numerals and their explanations will be omitted. In this embodiment, the gas injection nozzle 13 for preventing heat fog is connected to the position recognition device 4 and the ultrasonic hole 1, and the whole is horizontally moved 1Fll without changing its relative positional relationship. The gas injected into the gas injection nozzle 13 passes between the position recognition device 4, the lead frame 9, and the semiconductor pellet 8. Moreover, the injection gas t is set in a direction that does not flow toward the 1/pilari 2 or the electric torch 3. Air, nitrogen, inert gas, etc. are used as the gas to be injected.

また加熱されたリードフレーム９等の酸化を防止するた
め、酸化防止用ガスを噴射する酸化防止用ガス噴射ノズ
ル１４が設けられている。このガス噴０・１ノズル１４
の先端はフレーム押え７は内側壁部７ａに開口し、リー
ドフレーム９上を流れる。Further, in order to prevent the heated lead frame 9 and the like from being oxidized, an oxidation prevention gas injection nozzle 14 that injects an oxidation prevention gas is provided. This gas jet 0/1 nozzle 14
The tip of the frame presser 7 opens into the inner wall 7a and flows over the lead frame 9.

またガス噴射ノズル１４の途中にはヒータ１５が設けら
れている。したがってガス噴射ノズル１／１から哨１．
ＦＪ　’するガスは加熱されており、リードフレーム９
やフレーム押え７を冷Ｎ＋することはない。Further, a heater 15 is provided in the middle of the gas injection nozzle 14. Therefore, from the gas injection nozzle 1/1 to the nozzle 1.
The gas for FJ' is heated and the lead frame 9
There is no need to apply cold N+ to the frame presser foot 7.

酸化防止用ガスとしてはネオンやアルゴン等の不活性ガ
スや還元性ガスを用いる。As the antioxidant gas, an inert gas or reducing gas such as neon or argon is used.

次に動作を説明する。まず位置１α識菰首４が半導体ベ
レット８おＪ、びリードフレーム９の位置を測定しなが
ら、位ｄ認識５Ａ首４およびキャピラリ２全体を微調し
て、位置認識装置４の光軸が次にボンディングずべき位
置の真上に来るようにする。Next, the operation will be explained. First, while the position 1α recognition head 4 measures the position of the semiconductor pellet 8 and lead frame 9, the position d recognition head 4 and the entire capillary 2 are finely adjusted, and the optical axis of the position recognition device 4 is then Make sure it is directly above the bonding position.

同時に電気トーチ３によりワイヤ１１の先端にボールを
形成する。このときガス噴射ノズル１３からのガス流は
、位置認識装置４の下は通るが、ワイヤ１１の先端には
流れない。したがって、かげろうを防止でき、半導体デ
ツプ８およびリードフレーム９の正確な位置を認’：Ａ
’Ｊることができるとともに、ボール１０形成にＲ影響
を及ぼさない。At the same time, a ball is formed at the tip of the wire 11 using the electric torch 3. At this time, the gas flow from the gas injection nozzle 13 passes under the position recognition device 4 but does not flow to the tip of the wire 11. Therefore, it is possible to prevent heat loss and to confirm the exact position of the semiconductor depth 8 and the lead frame 9.
'J' and does not affect the formation of the ball 10.

次に位置認識装置４、ガス噴射ノズル１３、キャピラリ
２、超音波ホーン１の全体を、予め定められた距１ｍ　
Ｌだけ移動する。これによりキレピラリ２がボンディン
グ位置の真上に来る。次にキャピラリ２を隣下させ半導
体チップ８のポンディングパッドにワイヤ１１のボール
１０をボンディングし、その後キャピラリ２を少し上げ
てかつ水平移動させてリードフレーム９のインナーリー
ドのボンディングエリアにワイヤ１１をボンディングし
て、１ワイ■Ｉのボンディングを終了する。以上の動作
を繰り返してすべてのワイヤのボンディングを終了する
。かかるボンディング動作中、ガス噴射ノズル１３から
は酸化防止用ガスが噴射されているため、リードフレー
ム９が酸化することがない。またこのガスは加熱されて
いるため、リードフレーム９やフレーム押え７等を冷却
して湿度が変動することはない。Next, the entire position recognition device 4, gas injection nozzle 13, capillary 2, and ultrasonic horn 1 are placed at a predetermined distance of 1 m.
Move by L. As a result, the sharp beam 2 comes directly above the bonding position. Next, the capillary 2 is placed next to it and the ball 10 of the wire 11 is bonded to the bonding pad of the semiconductor chip 8. After that, the capillary 2 is raised slightly and moved horizontally, and the wire 11 is placed in the bonding area of the inner lead of the lead frame 9. Bonding is completed to complete the bonding of 1W I. Repeat the above operations to complete bonding of all wires. During this bonding operation, since the anti-oxidation gas is injected from the gas injection nozzle 13, the lead frame 9 will not be oxidized. Further, since this gas is heated, the humidity does not change due to cooling of the lead frame 9, frame presser 7, etc.

本発明の他の実施例によるワイヤボンディング装置を第
３図に示寸。本実施例て・ばかげろう防１１゜用ガス噴
用ノズル１３を設けていない。その代わりに、ヒータブ
ロック１２中からリードフレーム９を通って上に流れる
酸化防止用ガス流を形成りるため、ガス噴ひ１ノズル１
６が設けられている。A wire bonding apparatus according to another embodiment of the present invention is shown in dimensions in FIG. In this embodiment, the gas injection nozzle 13 for the 11° brazing prevention is not provided. Instead, gas injection nozzle 1 is used to form a flow of antioxidant gas from within heater block 12 and upward through lead frame 9.
6 is provided.

このガス噴射ノズル１６の先端は、ヒータブロック１２
のリードフレーム９の載置面に間口している。またガス
噴射ノズル１６の途中にはヒータ１７が設けられ、噴射
　ｆるガスを加熱している。The tip of this gas injection nozzle 16 is connected to the heater block 12.
It opens onto the mounting surface of the lead frame 9. Further, a heater 17 is provided in the middle of the gas injection nozzle 16 to heat the gas to be injected.

またガス噴）１ノズル１４の先端は、リードフレーム押
え７の内側壁部７ａの全周囲から、ガスが噴射するＪ：
うに形成されている。Gas is ejected from the entire periphery of the inner wall 7a of the lead frame holder 7 from the tip of the nozzle 14.
It is formed like a sea urchin.

これによりガスｎｌ　ｒｌノズル１４による横方向から
噴射するガス流とともに、ガス噴０・Ｉノズル１６によ
る−［方向に噴射するガス流が形成される。この上方向
に噴射Ｊるガス流の流速を、温度差にＪ二り発生ずる上
胃気流の流速Ｊ：り速くすることにＪ：りかげろうの発
生を防止することが可能である。As a result, a gas flow that is injected from the side direction by the gas nl rl nozzle 14 and a gas flow that is injected in the -[ direction by the gas jet 0/I nozzle 16 are formed. By increasing the flow rate of the gas flow injected upward by the flow rate of the epigastric air flow J: which occurs due to the temperature difference, it is possible to prevent the occurrence of water droplets.

同時にリードフレーム９の周囲、ボール１０の周囲を酸
化防止用ガスの雰囲気とすることがひきる。At the same time, it is advantageous to create an atmosphere of anti-oxidation gas around the lead frame 9 and around the balls 10.

また本実施例ではガスが流れる範囲が広く、常１１．１
一定速度で安定したｆＱ流どして流れる！こめ、安定し
たボール形成ができる。In addition, in this embodiment, the gas flow range is wide, and the gas flow is normally 11.1
Flows with a stable fQ flow at a constant speed! This allows for stable ball formation.

本実施例では１ヘーヂ電渉Ｊ３のキトピラリ２の直下に
穴３ａをあり、ワイＡ７１１の先端の放雷する部分とボ
ール１０にガス流が直接あたるようにしている。これに
よりボール１０およびワイヤ１１の酸化を防止できる。In this embodiment, a hole 3a is provided directly below the chitopillary 2 of the wire wire J3, so that the gas flow directly hits the lightning striking portion of the tip of the wire A711 and the ball 10. This prevents the ball 10 and the wire 11 from being oxidized.

本発明は上記実施例に限らず種々の限定が可能である。The present invention is not limited to the above embodiments, and various limitations are possible.

例えば第３図の実施例ではガス噴射ノズル１４と１６を
設けているが、いずれか一方のみを設置ノでｂよい。For example, in the embodiment shown in FIG. 3, gas injection nozzles 14 and 16 are provided, but it is sufficient to install only one of them.

〔発明の効果〕〔Effect of the invention〕

以上の通り本発明によれば、かげろうのＲ１を防止し、
かつ安定したボール形成が可能である。As described above, according to the present invention, heat loss R1 can be prevented,
Moreover, stable ball formation is possible.

またボンディングされるリードフレーム等の温度を低下
させることなく酸化を防止できる。Further, oxidation can be prevented without lowering the temperature of the lead frame or the like to be bonded.

【図面の簡単な説明】[Brief explanation of drawings]

第１図、第２図は本発明の一実施例によるワイｔ’ボン
アイング装置の正面図および平面図、第３図は本発明の
他の実施例によるワイヤボンディング装品の正面図、第
４図、第５図は従来のワイヤボンディング装置の正面図
および平面図である。 １・・・超音波ホーン、２・・・主１１ピラリ、３・・
・トーヂ雷極、４・・・位胃認識装置、５・・・ガス噴
射ノズル、６・・・照明ランプ、７・・・リードフレー
ム押え、８・・・半導体チップ、９・・・リードフレー
ム、１０・・・ボール、１１・・・ワイＡ７．１２・・
・ヒータブロック、１３・・・ガス噴ＣＪノズル、１／
Ｉ・・・ガス噴射ノズル、１５・・・ヒータ、１６・・
・ガス噴射ノズル、１７・・・ヒータ。 出願人代理人　　佐　　藤　　−雄 第１図 第２図 第４１ 第５図 手続補正書（方式） ％式％ １、事件の表示 昭和６０年　特許願　第２１６８０５号２、発明の名称 ワイヤボンディング装置 ３、補正をする者 事件との関係　　特許出願人 （３０７）　　株式会社東芝 ４、代　理　人　（郵便番号１００） 昭和６１年１月８日1 and 2 are a front view and a plan view of a wire bonding device according to an embodiment of the present invention, FIG. 3 is a front view of a wire bonding equipment according to another embodiment of the present invention, and FIG. , FIG. 5 is a front view and a plan view of a conventional wire bonding apparatus. 1... Ultrasonic horn, 2... Main 11 pillars, 3...
・Toji lightning pole, 4... Gastric recognition device, 5... Gas injection nozzle, 6... Illumination lamp, 7... Lead frame holder, 8... Semiconductor chip, 9... Lead frame , 10... Ball, 11... Wai A7.12...
・Heater block, 13...Gas injection CJ nozzle, 1/
I... Gas injection nozzle, 15... Heater, 16...
- Gas injection nozzle, 17... heater. Applicant's agent Mr. Sato Figure 1 Figure 2 Figure 5 Figure 5 Procedural amendment (method) % formula % 1. Indication of case 1985 Patent application No. 216805 2. Title of invention Wire bonding device 3 , Relationship with the case of the person making the amendment Patent applicant (307) Toshiba Corporation 4, Agent (zip code 100) January 8, 1986

Claims (1)

【特許請求の範囲】 １、ワイヤボンディングされるリードフレームおよび半
導体チップを加熱する加熱手段と、前記リードフレーム
および半導体チップの位置を光学的に認識する位置認識
手段と、この位置認識手段の認識結果に基づいて前記加
熱手段により加熱されたリードフレームおよび半導体チ
ップのボンディング位置にワイヤをボンディングするボ
ンディング手段とを備えたワイヤボンディング装置にお
いて、 前記位置認識手段と前記リードフレームおよび半導体チ
ップとの間の空間に所定のガス流を形成して、加熱によ
るかげろうの発生を防止するガス噴射手段を備え、この
ガス噴射手段によるガス流がボンディングワイヤに触れ
ないようにしたことを特徴とするワイヤボンディング装
置。 ２、ワイヤボンディングされるリードフレームおよび半
導体チップを加熱する加熱手段と、前記リードフレーム
および半導体チップの位置を光学的に認識する位置認識
手段と、この位置認識手段の認識結果に基づいて前記加
熱手段により加熱されたリードフレームおよび半導体チ
ップのボンディング位置にワイヤをボンディングするボ
ンディング手段とを備えたワイヤボンディング装置にお
いて、 前記リードフレームおよび前記半導体チップに対して、
加熱された酸化防止用ガスを噴射する酸化防止用ガス噴
射手段を備えたことを特徴とするワイヤボンディング装
置。 ３、特許請求の範囲第２項記載の装置において、前記酸
化防止用ガス噴射手段によるガス噴射速度を、加熱され
た前記リードフレームおよび半導体チップからの上昇気
流速度より速くしたことを特徴とするワイヤボンディン
グ装置。[Claims] 1. A heating means for heating a lead frame and a semiconductor chip to be wire-bonded, a position recognition means for optically recognizing the positions of the lead frame and the semiconductor chip, and a recognition result of the position recognition means. and a bonding means for bonding a wire to a bonding position of a lead frame and a semiconductor chip heated by the heating means based on the space between the position recognition means and the lead frame and the semiconductor chip. 1. A wire bonding apparatus, comprising: a gas injection means for forming a predetermined gas flow to prevent the generation of heat wax due to heating, and the gas flow from the gas injection means is prevented from touching the bonding wire. 2. heating means for heating the lead frame and semiconductor chip to be wire-bonded; position recognition means for optically recognizing the positions of the lead frame and semiconductor chip; and heating means for heating the lead frame and semiconductor chip based on the recognition results of the position recognition means A wire bonding apparatus comprising a bonding means for bonding a wire to a bonding position of a lead frame and a semiconductor chip heated by a wire bonding device, the wire bonding device comprising:
A wire bonding apparatus characterized by comprising an anti-oxidant gas injection means for ejecting a heated anti-oxidant gas. 3. The wire according to claim 2, wherein the gas injection speed by the antioxidant gas injection means is higher than the rising airflow speed from the heated lead frame and semiconductor chip. bonding equipment.
JP60216805A 1985-09-30 1985-09-30 Wire bonding apparatus Pending JPS6276729A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60216805A JPS6276729A (en) 1985-09-30 1985-09-30 Wire bonding apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60216805A JPS6276729A (en) 1985-09-30 1985-09-30 Wire bonding apparatus

Publications (1)

Publication Number Publication Date
JPS6276729A true JPS6276729A (en) 1987-04-08

Family

ID=16694165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60216805A Pending JPS6276729A (en) 1985-09-30 1985-09-30 Wire bonding apparatus

Country Status (1)

Country Link
JP (1) JPS6276729A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108122793A (en) * 2016-11-29 2018-06-05 三菱电机株式会社 Semiconductor manufacturing apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108122793A (en) * 2016-11-29 2018-06-05 三菱电机株式会社 Semiconductor manufacturing apparatus
JP2018088476A (en) * 2016-11-29 2018-06-07 三菱電機株式会社 Semiconductor equipment

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