JPS6275994A - Composite type magnetic bubble device - Google Patents

Abstract

PURPOSE:To improve a replicate characteristic by using a chip in which a transfer path formed by an ion driving and a transfer path composed of a soft magnetic material are commonly exist and disposing the soft magnetic transfer path in a side where the ion driving is not performed instead of the ion driving side when constituting a composite type magnetic bubble device. CONSTITUTION:In a gate constituting a composite type magnetic bubble device, a conductor 3, a soft magnetic transfer path 1, and ion driving transfer path 2 are provided. At this time, the relative arraying relation therebetween is specified as follows. The soft magnetic transfer path 1 is formed at a lower side of the conductor 3 with a prescribed interval left, the ion driving transfer path 2 is provided therebelow with a similar prescribed interval left and at this time, the relative position of the transfer path 1 situated usually at the side of the transfer path 2 is changed and the transfer path 1 is formed at a side in which the transfer path 2 is not present. In this way, the two transfer paths are completely separated, the attraction of the magnetic bubbles to the transfer path 2 is made sure.

Description

[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a 1 m Sl bubble device, and particularly to a composite type device using a chip in which a transfer path made by ion implantation and a transfer path made of a soft magnetic material coexist. This invention relates to a magnetic bubble device.

[Background of the invention]

In recent years, as described in Japanese Patent Application Laid-Open No. 186287/1987, a transfer path (
Composite magnetic bubble memory that mixes a transfer path made of ion implantation (ion implantation transfer path) and a soft magnetic material (typically permalloy, an alloy of Ni and Fe) (soft magnetic material transfer path) is attracting attention. . In this element, the part called the minor loop, which is the information storage part, mainly consists of an ion implantation transfer path, and the part called the major line, which inputs and outputs information to and from the information storage part, mainly consists of a soft magnetic material transfer path. ing. There are many ways to combine the ion implantation transfer path and the soft magnetic material transfer path in a composite device, but they can be roughly divided into two methods: one in which the minor loop is made entirely of the ion implantation transfer path, and the other in which part of the minor loop is also made of soft magnetic material. There is a method using a transfer path. Desirably, all of the minor loops would be made of ion implantation transfer paths, but the reality is that there are no replicate gates or swap gates necessary for a memory device that exhibits good characteristics that are compatible with this configuration.

[Purpose of the invention]

SUMMARY OF THE INVENTION An object of the present invention is to provide a bubble memory element having a replicate gate with good characteristics in which an ion implantation transfer path and a soft magnetic material transfer path are completely separated.

[Summary of the Invention] A typical replicate gate in which the ion implantation transfer path and the soft magnetic material transfer path are completely separated is disclosed in U.S. Pat.
40,010, as shown in FIG. There are two problems with this gate. The first problem is that deep ion implantation (depth 2000 to 4 (1)
00 people) are being carried out. in this way,
If deep ion implantation is performed under the soft magnetic material transfer path, the characteristics of the soft magnetic material transfer path will deteriorate. The second problem lies in the characteristics themselves. The operation of the gate of FIG. 1 is illustrated in FIG. After the magnetic bubble is extended across the two transfer paths by the conductor 3, both ends need to move along their respective transfer paths. Since magnetic bubbles inherently tend to shrink, the force that attracts the magnetic bubbles in the transfer path must be strong enough to stretch them against this tendency to shrink.

However, the force that attracts magnetic bubbles in the ion implantation transfer path is smaller than that in the soft magnetic transfer path, so the magnetic bubbles easily leave the ion implantation transfer path and are attracted to the soft magnetic transfer path. .

[Embodiments of the invention]

As a gate that solves the first and second problems at the same time, we devised something like the one shown in Figure 3. The big difference between the gates in Figure 1 is that in Figure 1 there is a soft magnetic material transfer path on the ion implantation area side of the ion implantation transfer path, whereas in Figure 3 there is a soft magnetic material transfer path on the side where ions are not implanted. There is a body transport path. Therefore, first of all, the first problem is necessarily solved. Also,
Generally, it is difficult for a magnetic bubble to move from a region where ions have been implanted to a region where no ions have been implanted, beyond the Ht field, so that magnetic bubbles tend to be attracted to boundaries. Therefore, this gate is also effective regarding the second problem.

The operation of the gate shown in FIG. 3 is shown in FIG. A pulse current is applied to the conductor 3 so that when the magnetic bubble of the ion implantation transfer path IJ- enters the gap of the conductor 3, the bias magnetic field in the conductor gap becomes small. Then, it extends within the 1 m magnetic bubble gap and straddles the soft magnetic material transfer path 1. After that, the magnetic bubble is attracted to both transfer paths, so it moves across both transfer paths. Since the directions of movement of both transfer paths are different, the magnetic bubble crosses the conductor gap diagonally. At this time, a pulse current of opposite polarity to that previously melted is applied so that the bias magnetic field within the conductor gap becomes larger. Then, the extended magnetic bubble is cut into two at the center, leaving magnetic bubbles in each of the ion implantation transfer path and the soft magnetic material transfer path.

Although the above example uses one conductor to stretch and cut the magnetic bubble, each can also be done by separate conductors. An example is shown in FIG.

In this case, the magnetic bubble transfer directions of the two transfer paths are arbitrary, and FIG. 5 shows a case where the magnetic bubbles are transferred in the same direction.

〔Effect of the invention〕

As described above, according to the present invention, there is no ion implantation region for forming an ion implantation transfer path under the soft magnetic material transfer path, and the ion implantation region and soft magnetic material transfer path can be formed without impairing the characteristics of the soft magnetic material transfer path. It is possible to realize a replicate gate that coexists with a magnetic material transfer path.

[Brief explanation of drawings]

FIG. 1 is a plan view of a conventional 1-knobricade gate, FIG. 2 is an explanatory diagram of the operation of conventional replicate gates 1 to 3, FIG. 3 is a plan view of a replicate gate of the present invention, and FIG. 4 is a plan view of the present invention. FIG. 5 is a plan view of another embodiment of the present invention.

Claims (1)

[Claims] a first transfer path made of a magnetic material for holding magnetic bubbles and a soft magnetic material for transferring the magnetic bubbles; a second transfer path formed by selectively implanting ions into the magnetic material; at least a means for generating a magnetic field that rotates within the plane of the magnetic material, a first transfer path is placed close to a side of the second transfer path where ions are not implanted, and the first and second transfer path A composite magnetic bubble device characterized in that there is a part in which a hairpin-shaped conductor pattern is placed perpendicular to a transfer path.