JPS62167697A - Hybrid type magnetic bubble memory element - Google Patents

Abstract

PURPOSE:To facilitate the transfer of bubbles by providing an element tapered from the initial pattern of 'Permalloy(R)' transfer path toward the connection part in the connection part from an ion implantation transfer path to the 'Permalloy(R)' transfer path and connecting the near tip of the tapered chip to the ion implantation transfer path. CONSTITUTION:The initial 'Permalloy(R)' pattern 13 of the 'Permalloy(R)' transfer path 12 has an element chip 13a tapered toward the connection part and connected to the ion implantation transfer path 11 nearly at the tip of the tapered element chip. The tapered angle theta of the chip 13a is preferably 0-90 deg.. Thus, the thinner part of the tapered chip 13a of the pattern 13 is susceptible to collect magnetic charge generated by a drive magnetic field to draw the bubble 14 from the ion implantation transfer path 11 to the 'Permalloy(R)' pattern easily.

Description

[Detailed Description of the Invention] [Summary] A connection section from an ion implantation transfer path to a permalloy transfer path in a hybrid magnetic bubble memory element, which operates by providing a tapered piece in the permalloy pattern of the connection section. Enables margin adjustment.

[Industrial application field]

The present invention relates to a hybrid magnetic bubble memory device, and more particularly, to an improvement in the connection between an ion implantation transfer path and a permalloy transfer path.

Magnetic bubble memory elements have conventionally used soft magnetic thin film patterns such as permalloy as the bubble transfer path, but recently, as storage density has increased, patterns have become finer and their formation has become more difficult with lithography. It's becoming. Therefore, we used an ion implantation method that does not require gaps between patterns.

The bubble transfer route is attracting attention. However, if the entire device is constructed of ion-implanted transfer paths, gate characteristics will be poor and margins will deteriorate. For this reason, hybrid elements using conventional permalloy transfer paths are becoming popular for functional parts such as gates.

In this hybrid type, a major issue is improving the margin of the connection between the ion implantation transfer path and the permalloy transfer path.

[Conventional technology]

FIG. 2 is a diagram showing the connection part from the ion implantation transfer path to the permalloy transfer path in a conventional hybrid magnetic bubble memory element, where ■ is the ion implantation region, 2 is the ion implantation transfer path, and 3 is the permalloy transfer path. It's a pattern.

In this conventional example, an ion-implanted layer 1 forming an ion-implanted transfer path has a triangular protrusion 4 that protrudes toward a half-pickax type permalloy pattern 3, and a bubble 5 is formed at the protruding part of the ion-implanted layer. 4 to 5' of permalloy pattern 3.

[Problem that the invention seeks to solve]

In the above-mentioned conventional method, the pattern 3 having the permalloy piece 3a that becomes thicker toward that part is used at the connection part from the ion implantation transfer path to the permalloy transfer path, so the magnetic charge due to the driving magnetic field is is widely distributed at the connection,
The drawback was that the driving force for drawing bubbles from the ion-implanted transfer path to the permalloy transfer path was weak.

The present invention was created in view of these points, and an object of the present invention is to provide a hybrid magnetic bubble memory element in which bubbles can easily move from an ion implantation transfer path to a permalloy transfer path.

[Means for solving problems]

Therefore, in the present invention, in a hybrid magnetic bubble memory element having an ion-implanted transfer path and a permalloy transfer path, the connection portion from the ion-implanted transfer path 11 to the permalloy transfer path 12 is located at the first point of the permalloy transfer path 12. The pattern 13 is characterized in that it has an elemental piece 13a that is tapered toward the connection portion, and is connected to the ion implantation transfer path 11 almost at the tip of the tapered elemental piece 13a.

[For production]

The permalloy pattern at the connection part has a tapered piece, and because it is connected to the ion implantation transfer path almost at the tip of the tapered part, the magnetic charge generated by the driving magnetic field tends to concentrate on the tapered part, and the ion implantation To facilitate the movement of bubbles from the transfer path to the permalloy transfer path.

〔Example〕

FIG. 1 is a diagram showing an embodiment of the present invention. In the figure, 10 is an ion implantation region, 11 is a snake-shaped ion implantation transfer path, 12 is a permalloy transfer path, 13 is a permalloy pattern, and 14 is a bubble.

This embodiment uses an ion implantation transfer path 11 and a permalloy transfer path 1.
2, the connection portion from the ion implantation transfer path 11 to the permalloy transfer path 12 is
It is constructed as shown in FIG. That is, the first permalloy pattern 13 of the permalloy transfer path 12 has an elemental piece 13a that tapers toward the connection portion, and is connected to the ion implantation transfer path II almost at the tip of the tapered elemental piece.

Note that the tapering angle θ of the elemental piece 13a is preferably in the range of 0° to 90″.

In this embodiment configured as described above, since the magnetic charge generated by the driving magnetic field tends to concentrate on the thinner part of the tapered piece 13a of the permalloy pattern 13, the bubble 14 is transferred from the ion implantation transfer path 11 to the permalloy pattern. Can be easily pulled out.

〔Effect of the invention〕

As described above, according to the present invention, it is possible to move bubbles from the ion implantation transfer path to the permalloy transfer path with an extremely easy-to-install configuration, thus making it possible to improve the operating margin, which is extremely useful in practice. It is.

[Brief explanation of drawings]

FIG. 1 is a diagram showing an embodiment of the present invention, and FIG. 2 is a diagram showing a connection portion from an ion implantation transfer path to a permalloy transfer path in a conventional hybrid magnetic bubble memory element. In FIG. 1, 10 is an ion implantation region, 11 is an ion implantation transfer path, 12 is a permalloy transfer path, 13 is a permalloy pattern, 13a is a tapered element, and 14 is a bubble.

Claims (1)

[Claims] 1. In a hybrid magnetic bubble memory element having an ion implantation transfer path and a permalloy transfer path, the ion implantation transfer path (11) to the permalloy transfer path (12)
) has a piece (13a) in which the first pattern (13) of the permalloy transfer path (12) tapers toward the connection part, and almost the tip of the tapered piece (13a). A hybrid magnetic bubble memory element characterized in that the ion implantation transfer path (11) is connected to the ion implantation transfer path (11).