JPS6275533A - イオンビ−ム加工方法および装置 - Google Patents
イオンビ−ム加工方法および装置Info
- Publication number
- JPS6275533A JPS6275533A JP60215003A JP21500385A JPS6275533A JP S6275533 A JPS6275533 A JP S6275533A JP 60215003 A JP60215003 A JP 60215003A JP 21500385 A JP21500385 A JP 21500385A JP S6275533 A JPS6275533 A JP S6275533A
- Authority
- JP
- Japan
- Prior art keywords
- spot
- ion beam
- ion
- diameter
- optical system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60215003A JPS6275533A (ja) | 1985-09-30 | 1985-09-30 | イオンビ−ム加工方法および装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60215003A JPS6275533A (ja) | 1985-09-30 | 1985-09-30 | イオンビ−ム加工方法および装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6275533A true JPS6275533A (ja) | 1987-04-07 |
| JPH0466347B2 JPH0466347B2 (enExample) | 1992-10-22 |
Family
ID=16665093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60215003A Granted JPS6275533A (ja) | 1985-09-30 | 1985-09-30 | イオンビ−ム加工方法および装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6275533A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6753253B1 (en) * | 1986-06-18 | 2004-06-22 | Hitachi, Ltd. | Method of making wiring and logic corrections on a semiconductor device by use of focused ion beams |
-
1985
- 1985-09-30 JP JP60215003A patent/JPS6275533A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6753253B1 (en) * | 1986-06-18 | 2004-06-22 | Hitachi, Ltd. | Method of making wiring and logic corrections on a semiconductor device by use of focused ion beams |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0466347B2 (enExample) | 1992-10-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4503329A (en) | Ion beam processing apparatus and method of correcting mask defects | |
| JP2680074B2 (ja) | 荷電粒子ビーム露光を用いた半導体装置の製造方法 | |
| TW495834B (en) | Method of electron-beam exposure and mask and electron-beam exposure system used therein | |
| EP0178156A2 (en) | Method of drawing a desired pattern on a target through exposure thereof with an electron beam | |
| JPS58190028A (ja) | 可変ライン走査を用いる荷電粒子ビ−ム露光装置 | |
| US4112305A (en) | Method of projecting a beam of charged particles | |
| USRE33193E (en) | Ion beam processing apparatus and method of correcting mask defects | |
| US4710639A (en) | Ion beam lithography system | |
| US4451738A (en) | Microcircuit fabrication | |
| US6087669A (en) | Charged-particle-beam projection-microlithography apparatus and transfer methods | |
| US4263514A (en) | Electron beam system | |
| US4392058A (en) | Electron beam lithography | |
| JPS6237808B2 (enExample) | ||
| EP0182360B1 (en) | A system for continuously exposing desired patterns and their backgrounds on a target surface | |
| JPS6275533A (ja) | イオンビ−ム加工方法および装置 | |
| US6352802B1 (en) | Mask for electron beam exposure and method of manufacturing semiconductor device using the same | |
| JP3060613B2 (ja) | 集束イオンビーム装置、及び集束イオンビームを用いた断面加工方法 | |
| KR20010040018A (ko) | 전자빔 리소그라피 도구용 조명 시스템 | |
| JP3247700B2 (ja) | 走査形投影電子線描画装置および方法 | |
| JP2824340B2 (ja) | 断面加工観察方法 | |
| TWI903085B (zh) | 電子束裝置及產生多個電子束之方法 | |
| JP3240730B2 (ja) | イオンビーム装置、及びイオンビーム装置による加工条件表示方法 | |
| JPS6184833A (ja) | マスクパタ−ン欠陥検査修正装置 | |
| JPH10312954A (ja) | 電子ビーム露光装置 | |
| JPS61125126A (ja) | 電子ビ−ム露光装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |