JPS627149B2 - - Google Patents
Info
- Publication number
- JPS627149B2 JPS627149B2 JP53135745A JP13574578A JPS627149B2 JP S627149 B2 JPS627149 B2 JP S627149B2 JP 53135745 A JP53135745 A JP 53135745A JP 13574578 A JP13574578 A JP 13574578A JP S627149 B2 JPS627149 B2 JP S627149B2
- Authority
- JP
- Japan
- Prior art keywords
- powder
- sintered material
- cutting
- volume
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 claims description 32
- 238000002844 melting Methods 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- 229910052582 BN Inorganic materials 0.000 claims description 6
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 4
- 229910052580 B4C Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 description 29
- 239000000843 powder Substances 0.000 description 22
- 239000002245 particle Substances 0.000 description 10
- 230000003197 catalytic effect Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 239000011812 mixed powder Substances 0.000 description 4
- 239000010959 steel Substances 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 3
- 239000012300 argon atmosphere Substances 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- -1 iron group metals Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910000601 superalloy Inorganic materials 0.000 description 2
- 238000005491 wire drawing Methods 0.000 description 2
- 229910000851 Alloy steel Inorganic materials 0.000 description 1
- 229910000760 Hardened steel Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000011195 cermet Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13574578A JPS5562858A (en) | 1978-11-06 | 1978-11-06 | Sintering material with tenacity and abrasion resistance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13574578A JPS5562858A (en) | 1978-11-06 | 1978-11-06 | Sintering material with tenacity and abrasion resistance |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5562858A JPS5562858A (en) | 1980-05-12 |
| JPS627149B2 true JPS627149B2 (US20100223739A1-20100909-C00005.png) | 1987-02-16 |
Family
ID=15158875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13574578A Granted JPS5562858A (en) | 1978-11-06 | 1978-11-06 | Sintering material with tenacity and abrasion resistance |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5562858A (US20100223739A1-20100909-C00005.png) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8861247B2 (en) | 2009-04-27 | 2014-10-14 | Micron Technology, Inc. | Techniques for providing a direct injection semiconductor memory device |
| US8947965B2 (en) | 2009-07-27 | 2015-02-03 | Micron Technology Inc. | Techniques for providing a direct injection semiconductor memory device |
| US8964479B2 (en) | 2010-03-04 | 2015-02-24 | Micron Technology, Inc. | Techniques for sensing a semiconductor memory device |
| US8982633B2 (en) | 2009-05-22 | 2015-03-17 | Micron Technology, Inc. | Techniques for providing a direct injection semiconductor memory device |
| US9019759B2 (en) | 2010-03-15 | 2015-04-28 | Micron Technology, Inc. | Techniques for providing a semiconductor memory device |
| US9064730B2 (en) | 2009-03-04 | 2015-06-23 | Micron Technology, Inc. | Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device |
| US9093311B2 (en) | 2009-03-31 | 2015-07-28 | Micron Technology, Inc. | Techniques for providing a semiconductor memory device |
| US9240496B2 (en) | 2009-04-30 | 2016-01-19 | Micron Technology, Inc. | Semiconductor device with floating gate and electrically floating body |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5626771A (en) * | 1979-08-14 | 1981-03-14 | Sumitomo Electric Industries | Sintered body for cast iron cutting tool and its manufacture |
| JPS5860678A (ja) * | 1981-10-02 | 1983-04-11 | 三菱マテリアル株式会社 | 切削および耐摩耗工具用高靭性窒化硼素基超高圧焼結材料 |
| JPH07100628B2 (ja) * | 1987-11-18 | 1995-11-01 | 昭和電工株式会社 | 立方晶窒化ほう素焼結体の製造方法 |
| CN113896537B (zh) * | 2021-12-10 | 2022-02-22 | 山东金鸿新材料股份有限公司 | 一种碳化硼与碳化硅复合陶瓷的制备方法 |
-
1978
- 1978-11-06 JP JP13574578A patent/JPS5562858A/ja active Granted
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9064730B2 (en) | 2009-03-04 | 2015-06-23 | Micron Technology, Inc. | Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device |
| US9093311B2 (en) | 2009-03-31 | 2015-07-28 | Micron Technology, Inc. | Techniques for providing a semiconductor memory device |
| US8861247B2 (en) | 2009-04-27 | 2014-10-14 | Micron Technology, Inc. | Techniques for providing a direct injection semiconductor memory device |
| US9240496B2 (en) | 2009-04-30 | 2016-01-19 | Micron Technology, Inc. | Semiconductor device with floating gate and electrically floating body |
| US8982633B2 (en) | 2009-05-22 | 2015-03-17 | Micron Technology, Inc. | Techniques for providing a direct injection semiconductor memory device |
| US8947965B2 (en) | 2009-07-27 | 2015-02-03 | Micron Technology Inc. | Techniques for providing a direct injection semiconductor memory device |
| US8964461B2 (en) | 2009-07-27 | 2015-02-24 | Micron Technology, Inc. | Techniques for providing a direct injection semiconductor memory device |
| US8964479B2 (en) | 2010-03-04 | 2015-02-24 | Micron Technology, Inc. | Techniques for sensing a semiconductor memory device |
| US9019759B2 (en) | 2010-03-15 | 2015-04-28 | Micron Technology, Inc. | Techniques for providing a semiconductor memory device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5562858A (en) | 1980-05-12 |
