JPS627120A - Deposition film forming device - Google Patents
Deposition film forming deviceInfo
- Publication number
- JPS627120A JPS627120A JP14483485A JP14483485A JPS627120A JP S627120 A JPS627120 A JP S627120A JP 14483485 A JP14483485 A JP 14483485A JP 14483485 A JP14483485 A JP 14483485A JP S627120 A JPS627120 A JP S627120A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- film forming
- deposited film
- vacuum valves
- trap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は堆積膜形成装置に係り、特にその排気系の改良
に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a deposited film forming apparatus, and particularly to improvement of its exhaust system.
本発明は1例えばプラズマCVD法、グロー放電法、ア
ーク放電法等°によって非晶質シリコン等の堆積膜を形
成する装置に適用される。The present invention is applied to an apparatus for forming a deposited film of amorphous silicon or the like by, for example, a plasma CVD method, a glow discharge method, an arc discharge method, or the like.
[従来技術]
第3図は、従来の堆積膜形成装置の一例の概略的構成図
である。[Prior Art] FIG. 3 is a schematic configuration diagram of an example of a conventional deposited film forming apparatus.
同図において、反応槽1内のガス等は、排気管2および
真空バルブ3を通り、メカニカルブースタ4および油回
転ポンプ5によって強制的に外部へ排′気される。なお
、油回転ポンプ5には、油フィルタ6および油タンク7
が接続されている。In the figure, gas and the like in a reaction tank 1 pass through an exhaust pipe 2 and a vacuum valve 3, and are forcibly exhausted to the outside by a mechanical booster 4 and an oil rotary pump 5. Note that the oil rotary pump 5 includes an oil filter 6 and an oil tank 7.
is connected.
このような排気系によって1反応槽1内を所望の真空度
にしたり、堆積膜を形成する際の反応済みガスを排気し
たりする。Such an exhaust system is used to achieve a desired degree of vacuum within one reaction tank 1 and to exhaust the reacted gas during the formation of a deposited film.
[発明が解決しようとする問題点]
しかしながら、たとえばプラズマCVD法等により反応
槽1内にセットされた基体上に堆積膜を形成すると、そ
の反応生成物の一部は反応槽1の内面や配管等に粉体状
に付着する。したがって、従来の堆積膜形成装置では、
反応槽!内を排気する時に、前記粉体が排気系のメカニ
カルブースタ4および油回転ポンプ5等に混入し、ポン
プの排気能力の低下やポンプ用オイルの劣化を来たすと
ともに、油フィルタ8の交換頻度が高くなり、場合によ
ってはポンプの機械的な耐久性を劣化させてしまう等の
問題点を有していた。[Problems to be Solved by the Invention] However, when a deposited film is formed on a substrate set in the reaction tank 1 by, for example, a plasma CVD method, a part of the reaction product is deposited on the inner surface of the reaction tank 1 or on the piping. It adheres in powder form to etc. Therefore, in the conventional deposited film forming apparatus,
Reaction tank! When evacuating the inside, the powder gets mixed into the mechanical booster 4, oil rotary pump 5, etc. of the exhaust system, resulting in a decrease in the pump's exhaust capacity and deterioration of the pump oil, and the oil filter 8 has to be replaced more frequently. However, in some cases, the mechanical durability of the pump may be deteriorated.
[問題点を解決するための手段]
本発明による堆積膜形成装置は、堆積膜形成用の反応槽
の排気系に、前記反応槽内で生成する粉体の回収手段を
設けたことを特、徴とする。[Means for Solving the Problems] The deposited film forming apparatus according to the present invention is characterized in that the exhaust system of the reaction tank for deposited film formation is provided with means for collecting powder generated in the reaction tank. be a sign.
[作用]
このように上記排気系に粉体回収手段を設けたことで、
ポンプ等の排気系への粉体の混入が防止され、排気系の
排気能力の低下や故障等がなくなり、メンテナンスも従
来より大幅に軽減される。[Function] By providing the powder recovery means in the exhaust system in this way,
Powder is prevented from entering the exhaust system such as a pump, there is no reduction in the exhaust capacity or breakdown of the exhaust system, and maintenance is significantly reduced compared to conventional systems.
[実施例]
以下、本発明の実施例を図面を用いて詳細に説゛明する
。[Example] Hereinafter, an example of the present invention will be described in detail using the drawings.
第1図は、本発明に゛よる堆積膜形成装置の一実施例の
概略的構成図である。ただし、上記従来例と同一部材に
は同一番号を付して説明は簡略化する。FIG. 1 is a schematic diagram of an embodiment of a deposited film forming apparatus according to the present invention. However, the same members as those in the conventional example described above are given the same numbers to simplify the explanation.
同図において、反応槽1の排気管2は真空バルブ3を介
して分岐し、一方の配管は真空バルブ8aを介して粉体
トラップ9の吸入口に接続され、他方の配管は真空バル
ブ8bを介して粉体トラップ10の吸入口に接続されて
いる。さらに、粉体トラップ8および10の各排出口は
、真空トラップllaおよびllbを介して合流し、メ
カニカルブースタ4の吸込み口に接続されている。メカ
ニカルブースタ4の吐出し口は油回転ポンプ5の吸込み
口に接続され、反応槽1内のガスは油回転ポンプ5の吐
出し口から外部へ排出される。なお、粉体トラップ9お
よびlOの構成は、後程第2図を用いて説明する。In the figure, the exhaust pipe 2 of the reaction tank 1 is branched via a vacuum valve 3, one pipe is connected to the suction port of a powder trap 9 via a vacuum valve 8a, and the other pipe is connected to a vacuum valve 8b. It is connected to the suction port of the powder trap 10 via the powder trap 10. Further, the respective discharge ports of the powder traps 8 and 10 join together via vacuum traps lla and llb, and are connected to the suction port of the mechanical booster 4. The discharge port of the mechanical booster 4 is connected to the suction port of the oil rotary pump 5, and the gas in the reaction tank 1 is discharged to the outside from the discharge port of the oil rotary pump 5. The configurations of the powder trap 9 and lO will be explained later using FIG. 2.
次に、堆積膜の形成工程と本実施例の動作を説明する。Next, the process of forming a deposited film and the operation of this embodiment will be explained.
まず、真空バルブ8bおよびllbを閉じ、真空バルブ
8aおよびllaを開いておく、これによって粉体トラ
ップ9のみが粉体回収手段として用いられる。続いて、
堆積膜を形成するために、反応槽!内に基体をセットし
、必要に応じて加熱する。たとえば非晶質シリコン膜を
形成する場合は、一般に200〜300℃程度に加熱さ
れる。基体が所定温度に達したら、SiH4、Si2
H6等のシラン系ガスを図示されていないガス導入管か
ら反応槽1内に導入し、直流、高周波等の電圧によって
放電を生起させる。放電現象によって、導入されたガス
が分解され、基体上に非晶質シリコンが堆積する。この
時生成される粉体は、排気管2.真空バルブ3および8
aを通って粉体トラップ8に至り、ここで捕集される。First, the vacuum valves 8b and llb are closed, and the vacuum valves 8a and lla are left open, so that only the powder trap 9 is used as a powder collection means. continue,
A reaction tank to form a deposited film! Place the substrate inside and heat as necessary. For example, when forming an amorphous silicon film, it is generally heated to about 200 to 300°C. When the substrate reaches a certain temperature, SiH4, Si2
A silane gas such as H6 is introduced into the reaction tank 1 from a gas introduction pipe (not shown), and discharge is caused by a voltage such as a direct current or high frequency. Due to the discharge phenomenon, the introduced gas is decomposed and amorphous silicon is deposited on the substrate. The powder generated at this time is the exhaust pipe 2. Vacuum valves 3 and 8
a to the powder trap 8, where it is collected.
したがって、粉体が除去されたガスがメカニカルブース
タ4および油回転ポンプ5に吸込まれるために、従来の
ようなポンプ類の排気能力の低下および粉体が原因の故
障等が防止される。Therefore, the gas from which the powder has been removed is sucked into the mechanical booster 4 and the oil rotary pump 5, thereby preventing a decrease in the pumping capacity of conventional pumps and failures caused by the powder.
このようにして粉体トラップ9に粉体が多量に蓄積され
ると、真空バルブ8bおよびubを開き、真空バルブ8
aおよびllaを閉じる。これによって、今度は粉体ト
ラップ10が粉体回収手段として用いられ、その間に、
粉体が蓄積された粉体トラップ9は新たな粉体トラ−2
プに交換されるか、又は後述するように、粉体トラップ
θ内の粉体が除去される。このように排気管を2系列又
はそれ以上に分岐させておくことで、排気動作を中断す
ることなく、粉体が蓄積された粉体トラップを順次交換
することができる。When a large amount of powder is accumulated in the powder trap 9 in this way, the vacuum valves 8b and ub are opened, and the vacuum valve 8
Close a and lla. As a result, the powder trap 10 is now used as a powder collection means, while
The powder trap 9 in which powder has accumulated is replaced with a new powder trap 2.
or the powder in the powder trap θ is removed as described below. By branching the exhaust pipe into two or more lines in this manner, powder traps in which powder has accumulated can be replaced one after another without interrupting the exhaust operation.
第2図(A)〜(C)は、各々本実施例における粉体ト
ラップの変形例を示す概略的断面図である。FIGS. 2(A) to 2(C) are schematic cross-sectional views showing modified examples of the powder trap in this embodiment.
第2図(A)において、ケース20には、反応槽lの排
気管2側に接続された吸入管21と、メカニカルブース
タ4側に接続された排気管22とが設けられ、また、ケ
ース20内にはじヤま板23が設けられている。吸入管
21からのガスは1、じヤま板23に衝突して下方へ導
かれ、更にケース20の内壁に衝突して排気管22から
排出される。したがって、吸入ガス内に含まれる粉体は
、じ帝ま板23に付着するとともに、ケース20の内壁
に衝突又は沈降により付着し、排気管22からは粉体が
除去されたガスが排出される。In FIG. 2(A), the case 20 is provided with an inlet pipe 21 connected to the exhaust pipe 2 side of the reaction tank l and an exhaust pipe 22 connected to the mechanical booster 4 side. A cutting board 23 is provided inside. The gas from the suction pipe 21 first collides with the baffle plate 23 and is guided downward, further collides with the inner wall of the case 20 and is discharged from the exhaust pipe 22. Therefore, the powder contained in the intake gas adheres to the cutting board 23 and also to the inner wall of the case 20 due to collision or settling, and the gas from which the powder has been removed is discharged from the exhaust pipe 22. .
なお、じゃま板23の形状は、図示された形状だけに限
定されるものでないことは明白である。Note that it is clear that the shape of the baffle plate 23 is not limited to only the illustrated shape.
第2図(B)において、吸入管21からのガスが衝突す
る部分に、着脱可能な槽24が設けられている。したが
って、吸入ガスに含まれる粉体は、主に槽24の内壁に
衝突により又は沈降により付着し、ケース20の上部に
設けられた排気管22からは粉体が除去されたガスが排
出される。こうして槽24に粉体が蓄積されると、槽2
4を取り外して粉体を除去するか、又は新たな槽24と
交換する。In FIG. 2(B), a removable tank 24 is provided at a portion where the gas from the suction pipe 21 collides. Therefore, the powder contained in the intake gas mainly adheres to the inner wall of the tank 24 due to collision or sedimentation, and the gas from which the powder has been removed is discharged from the exhaust pipe 22 provided at the upper part of the case 20. . When the powder is accumulated in the tank 24 in this way, the tank 2
4 to remove the powder, or replace it with a new tank 24.
第2図(C)において、ケース20には絶縁材25を介
して環状の放電電極2Bが設けられ、粉体トラップを分
解することなく、付着した粉体をエツチング除去するこ
とができる。吸入管21からのガスはケース20の内壁
の下方部に吹きつけられ、吸入ガスに含まれる粉体は衝
突又は沈降によってケース20の内壁下部に付着する。In FIG. 2(C), a ring-shaped discharge electrode 2B is provided on the case 20 with an insulating material 25 interposed therebetween, so that attached powder can be removed by etching without disassembling the powder trap. Gas from the suction pipe 21 is blown onto the lower part of the inner wall of the case 20, and powder contained in the suction gas adheres to the lower part of the inner wall of the case 20 by collision or sedimentation.
こうして蓄積された粉体を除去するには、反応槽lから
CF4等のエツチング用ガスをケース20’内に導入し
、放電電極26に高周波を印加して放電を生起させる。To remove the powder thus accumulated, an etching gas such as CF4 is introduced into the case 20' from the reaction tank 1, and a high frequency is applied to the discharge electrode 26 to cause discharge.
これによって、エツチング用ガスが分解され、蓄積した
粉体をエツチング除去することができる。As a result, the etching gas is decomposed and the accumulated powder can be removed by etching.
[発明の効果]
以上詳細に説明したように、本発明による堆積膜形成装
置は排気系に粉体回収手段を設けたために、ポンプ等の
排気系への粉体の混入が防止される。その結果、排気系
の排気能力の低下、ポンプ類のオイル劣化および機械的
耐久性の低下等が防雪トされ、排気系の信頼性が向上す
るとともに、メンテナンスも従来より大幅に軽減される
。[Effects of the Invention] As described above in detail, since the deposited film forming apparatus according to the present invention includes the powder recovery means in the exhaust system, it is possible to prevent powder from entering the exhaust system such as a pump. As a result, the reduction in the exhaust capacity of the exhaust system, the deterioration of the oil in the pumps, the reduction in mechanical durability, etc. are prevented from snow, the reliability of the exhaust system is improved, and maintenance is significantly reduced compared to conventional systems.
第1図は1本発明による堆積膜形成装置の一実施例の概
略的構成図。
第2図(A)〜(C)は、各々本実施例における°粉体
トラップの変形例を示す概略的断面図。
第3図・は、従来の堆積膜形成装置の一例の概略的構成
図である。
1・・・反応槽
4・拳・メカニカルブースタ
5・・・油回転ポンプ
9.101111・粉体トラップ
23・番・じ令ま板
24・O拳着脱可能な槽
2B・・・放電電極
代理人 弁理士 山 下 積 平
第2図
↓
(C)
↓FIG. 1 is a schematic diagram of an embodiment of a deposited film forming apparatus according to the present invention. FIGS. 2(A) to 2(C) are schematic cross-sectional views showing modified examples of the powder trap in this embodiment. FIG. 3 is a schematic configuration diagram of an example of a conventional deposited film forming apparatus. 1... Reaction tank 4, fist, mechanical booster 5... oil rotary pump 9. 101111, powder trap 23, number, order plate 24, removable tank 2B... discharge electrode agent Patent Attorney Seki Yamashita Figure 2 ↓ (C) ↓
Claims (4)
で生成する粉体の回収手段を設けたことを特徴とする堆
積膜形成装置。(1) A deposited film forming apparatus characterized in that an exhaust system of a reaction tank for forming a deposited film is provided with means for collecting powder produced in the reaction tank.
表面に衝突させて捕集する槽から成ることを特徴とする
特許請求の範囲第1項記載の堆積膜形成装置。(2) The deposited film forming apparatus according to claim 1, wherein the powder collecting means comprises a tank that collects the passing powder by colliding with the surface of an object therein.
な容器が収容されていることを特徴とする特許請求の範
囲第2項記載の堆積膜形成装置。(3) The deposited film forming apparatus according to claim 2, wherein the collection tank accommodates a detachable container in which the collected powder is deposited.
放電電極が設けられていることを特徴とする特許請求の
範囲第2項記載の堆積膜形成装置。(4) The deposited film forming apparatus according to claim 2, wherein the collecting tank is provided with a discharge electrode for decomposing and vaporizing the collected powder.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14483485A JPS627120A (en) | 1985-07-03 | 1985-07-03 | Deposition film forming device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14483485A JPS627120A (en) | 1985-07-03 | 1985-07-03 | Deposition film forming device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS627120A true JPS627120A (en) | 1987-01-14 |
Family
ID=15371519
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14483485A Pending JPS627120A (en) | 1985-07-03 | 1985-07-03 | Deposition film forming device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS627120A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5250323A (en) * | 1989-10-30 | 1993-10-05 | Kabushiki Kaisha Toshiba | Chemical vapor growth apparatus having an exhaust device including trap |
US5819683A (en) * | 1995-05-02 | 1998-10-13 | Tokyo Electron Limited | Trap apparatus |
JP2008544844A (en) * | 2005-07-01 | 2008-12-11 | ニュープロテック・カンパニー・リミテッド | By-product collection device for semiconductor manufacturing process |
FR3102680A1 (en) * | 2019-11-06 | 2021-05-07 | Pfeiffer Vacuum | Trap for vacuum line, installation and use |
-
1985
- 1985-07-03 JP JP14483485A patent/JPS627120A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5250323A (en) * | 1989-10-30 | 1993-10-05 | Kabushiki Kaisha Toshiba | Chemical vapor growth apparatus having an exhaust device including trap |
US5819683A (en) * | 1995-05-02 | 1998-10-13 | Tokyo Electron Limited | Trap apparatus |
JP2008544844A (en) * | 2005-07-01 | 2008-12-11 | ニュープロテック・カンパニー・リミテッド | By-product collection device for semiconductor manufacturing process |
FR3102680A1 (en) * | 2019-11-06 | 2021-05-07 | Pfeiffer Vacuum | Trap for vacuum line, installation and use |
WO2021089380A1 (en) * | 2019-11-06 | 2021-05-14 | Pfeiffer Vacuum | Trap for vacuum line, installation and use |
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