JPS6267550A - Exposuring mask - Google Patents
Exposuring maskInfo
- Publication number
- JPS6267550A JPS6267550A JP60209347A JP20934785A JPS6267550A JP S6267550 A JPS6267550 A JP S6267550A JP 60209347 A JP60209347 A JP 60209347A JP 20934785 A JP20934785 A JP 20934785A JP S6267550 A JPS6267550 A JP S6267550A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- film
- resist
- mask
- defect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、パターン欠損欠陥修正部分が再剥離し難く
された露光用マスクに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an exposure mask in which a pattern defect repaired portion is made difficult to peel off again.
第2図(よ例えば特開昭56−93324号公報に示さ
れた従来のパターンの欠損欠陥を修正した露光用マスク
を示す断面図であり、図において(1)は絶縁体基板で
あって、ここでは石英基板、(2)は金属膜パターン、
(3)は金属膜パターン(2)の、一般にピンホールと
呼ばれる欠損欠陥部分近傍を、レーザビームで溶融して
欠損部分を埋めるようにした修正部分である。FIG. 2 is a sectional view showing an exposure mask for correcting a conventional pattern defect shown in, for example, Japanese Patent Application Laid-Open No. 56-93324, in which (1) is an insulating substrate; Here, a quartz substrate, (2) a metal film pattern,
(3) is a repaired portion of the metal film pattern (2) in which the vicinity of a defective portion generally called a pinhole is melted with a laser beam to fill the defective portion.
従来の露光用マスクは上記のように、パターンの欠損欠
陥部分を修正したものであるから、半導体製造工程中の
7オトレジストの露光時に、欠損欠陥部分からの漏れる
光を減らして、意図しない露光部分の発生を無くすよう
になっている。As mentioned above, the conventional exposure mask is a mask that corrects the defective parts of the pattern, so when exposing the photoresist during the semiconductor manufacturing process, it reduces the light leaking from the defective parts and prevents unintended exposed parts. It is designed to eliminate the occurrence of
上記のような従来の露光用マスクでは、修正部分(3)
が超音波洗浄時に再剥離しやすいといった問題点があっ
た。この理由としては、パターン(2)の材質が金属で
基板(1)の石英と熱膨張係数が大きく異なるため、パ
ターン(2)内の応力が大であるところに、欠損欠陥の
生ずる基板(1)の部分が何等かの原因で付着力が不足
し、剥離に至るものと考えられる。In the conventional exposure mask as mentioned above, the correction part (3)
However, there was a problem in that it was easy to peel off again during ultrasonic cleaning. The reason for this is that the pattern (2) is made of metal and has a significantly different coefficient of thermal expansion from the quartz of the substrate (1). ) is thought to have insufficient adhesion for some reason, leading to peeling.
この発明はかかる問題を解決するためになされたもので
、再剥離を生じ難くした露光用マスクを得るととを目的
としている。The present invention was made to solve this problem, and an object of the present invention is to provide an exposure mask that is less likely to be peeled off again.
この発明に係わる露光用マスクは、絶縁体基板上に金属
パターン膜を設け、前記金属膜パターンの欠損欠陥部分
に炭化金属の補填膜を埋めたものである。The exposure mask according to the present invention includes a metal pattern film provided on an insulating substrate, and a metal carbide filling film filled in the defective portion of the metal film pattern.
この発明においては、金属膜パターンの欠損欠陥部分を
塞ぐ補填膜は、絶縁体基板に熱膨張係数が比較的近い炭
化金属で構成され、その内部応力を比較的小にでき絶縁
体基板より剥離し難くする。In this invention, the compensation film that fills the defective portion of the metal film pattern is made of metal carbide whose coefficient of thermal expansion is relatively similar to that of the insulating substrate, and its internal stress can be made relatively small, so that it does not peel off from the insulating substrate. Make it difficult.
第1図はこの発明の一実施例を示す断面図であり、(3
a)は金属膜パターン(2)の欠損欠陥部分とそのまわ
りの部分とを除去した後に埋められた補填膜であって、
従来のものの修正部分(3)に対応する部分であゆ、こ
の実施例では炭化クロム(CrsC*)膜であり、他の
符号はいずれも従来のものと同一のものである。FIG. 1 is a cross-sectional view showing one embodiment of the present invention, (3
a) is a compensation film filled after removing the missing defective part of the metal film pattern (2) and the surrounding part,
This part corresponds to the modified part (3) of the conventional one, and is a chromium carbide (CrsC*) film in this embodiment, and all other symbols are the same as those of the conventional one.
第1図の構造を得る製造工程の一例を第3図(a)ない
し@を用いて説明する。まず図(a)に示されたパター
ン(2)に欠損欠陥部分(3b)が存在する露光用マス
ク表面全面に、図(b)の如く、ポジ型の7オトレジス
ト(4)を塗布する。欠陥部分(3b)全体をおおうよ
うに、図(C)の如く、レジスト(4)のスポット露光
部分(4a)を得る。その際、パターン欠陥検査工程で
あらかじめ求められている欠陥の大きさ位置に従って、
照射位置が自在にコントロールできる紫外線またはX線
レーザを用いて露光するのが望ましい。これを想像する
と、図(d)の如く、欠陥部分(3b)より大なる開口
のあるレジスl−(41のパターンが得られる。これを
マスクにドライイオンエツチング等で、図(e)の如く
、パターン(2)の部分を除去する。全面に炭化クロム
膜(3C)を図(f)の如く、スパッタ法等で堆積させ
る。レジスト(4)を除去すると、この上の炭化クロム
膜(3C)も同時に除去をされ、図(g)の如く、炭化
クロム膜(3c)のうち、パターン(2)中のあらかじ
めドライイオンエツチングされた部分に埋め込まれた上
記の補填膜(3a)が残され、前出の第1図の構造が得
られる。An example of the manufacturing process for obtaining the structure shown in FIG. 1 will be explained using FIGS. 3(a) to 3(a). First, a positive type 7 photoresist (4) is applied to the entire surface of the exposure mask where the defective portion (3b) exists in the pattern (2) shown in FIG. 3(a), as shown in FIG. As shown in Figure (C), a spot exposed portion (4a) of the resist (4) is obtained so as to cover the entire defective portion (3b). At that time, according to the size and position of the defect determined in advance in the pattern defect inspection process,
It is desirable to perform exposure using ultraviolet rays or an X-ray laser whose irradiation position can be freely controlled. If we imagine this, we can obtain a pattern of resist l-(41) with a larger opening than the defective part (3b) as shown in Figure (d). Using this as a mask, we perform dry ion etching, etc., as shown in Figure (e). , remove the pattern (2). A chromium carbide film (3C) is deposited on the entire surface by sputtering or the like as shown in Figure (f). When the resist (4) is removed, the chromium carbide film (3C) on the resist (4) is removed. ) was also removed at the same time, and as shown in Figure (g), the above-mentioned compensation film (3a) embedded in the dry ion etched portion of the pattern (2) of the chromium carbide film (3c) was left behind. , the structure shown in FIG. 1 mentioned above is obtained.
この実施例は上記のように構成したので、補填膜(3a
)が従来のものと同様に欠損欠陥部分(3b)をふさぎ
、半導体製造工程中のフォトレジストの露光時の意図し
ない部分の露光部分の発生を無くすようになっている。Since this example was constructed as described above, the filling film (3a
) closes the missing defective portion (3b) in the same way as in the conventional one, thereby eliminating the occurrence of unintended exposed portions during exposure of the photoresist during the semiconductor manufacturing process.
以上の説明かられかるように、補填膜(3&)は基板(
1)の欠損欠陥が生じた部分(この部分は何等かの原因
で剥離しやすいものと思われる)だけでなく、その周囲
の部分にも接するようにされると共に基板(1)の石英
等の絶縁体と金属膜パターン(2)のクロム等の金属と
のどちらにもその熱膨張係数の差が大とならない炭化ク
ロムからなっているため、従来のものより再剥離が生じ
難く、先にあげた問題点が解決されることは明白である
。As can be seen from the above explanation, the supplementary film (3 &) is the substrate (
It is made to contact not only the part where the defect (1) has occurred (this part is likely to peel off easily for some reason), but also the surrounding parts, and the quartz etc. of the substrate (1) Since it is made of chromium carbide, which does not have a large difference in coefficient of thermal expansion between the insulator and the metal such as chromium of the metal film pattern (2), re-peeling is less likely to occur than with conventional products. It is clear that the above problems will be solved.
なお、上記実施例では、補填膜(3a)の材質が炭化ク
ロムである場合について述べたが、例えばモリブデン、
タングステン等の他の金属の炭化物であってもよい。In the above embodiment, the material of the filling film (3a) is chromium carbide, but for example, molybdenum, molybdenum,
It may also be a carbide of other metals such as tungsten.
また、上記実施例では、パターン(2)の欠損欠陥部部
とその周辺を除去した所に補填膜(3a)を埋めるよう
にしたが、上記周辺部分は勿論、欠損欠陥部分の基板(
1)表面のパターン(2)の残留物を除去しなくとも補
填膜(3a)の材質を炭化金属としたことによる効果を
有すことは言うまでもない。Further, in the above embodiment, the filling film (3a) is filled in the area where the defective part of the pattern (2) and its surroundings have been removed.
1) It goes without saying that even if the residue of the pattern (2) on the surface is not removed, the effect of using metal carbide as the material of the filling film (3a) can be obtained.
この発明は以上説明したとおり、金属膜パターンの欠損
欠陥部分を埋める補填膜がその内部応力をより小とする
ことにより、再剥離の生じ難い露光用マスクが得られる
効果が有る。As explained above, the present invention has the effect of providing an exposure mask that is less likely to be peeled off again by reducing the internal stress of the compensation film that fills the defective portion of the metal film pattern.
図において、(1)は絶縁体基板、(2)は金属膜パタ
ーン、(3a)は補填膜である。
なお、各図中同一符号ば同一または相当部分を示す。In the figure, (1) is an insulating substrate, (2) is a metal film pattern, and (3a) is a supplementary film. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (1)
金属膜パターの欠損欠陥部分を埋める炭化金属の補填膜
とを備えた露光用マスク。(1) An exposure mask comprising a metal film pattern provided on an insulating substrate and a metal carbide compensation film that fills in the defective portions of the metal film pattern.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60209347A JPS6267550A (en) | 1985-09-19 | 1985-09-19 | Exposuring mask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60209347A JPS6267550A (en) | 1985-09-19 | 1985-09-19 | Exposuring mask |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6267550A true JPS6267550A (en) | 1987-03-27 |
Family
ID=16571446
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60209347A Pending JPS6267550A (en) | 1985-09-19 | 1985-09-19 | Exposuring mask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6267550A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58195846A (en) * | 1982-05-10 | 1983-11-15 | Konishiroku Photo Ind Co Ltd | Blank for chromium mask |
JPS60182442A (en) * | 1984-02-29 | 1985-09-18 | Konishiroku Photo Ind Co Ltd | Photomask material |
-
1985
- 1985-09-19 JP JP60209347A patent/JPS6267550A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58195846A (en) * | 1982-05-10 | 1983-11-15 | Konishiroku Photo Ind Co Ltd | Blank for chromium mask |
JPS60182442A (en) * | 1984-02-29 | 1985-09-18 | Konishiroku Photo Ind Co Ltd | Photomask material |
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