JPS6228463B2 - - Google Patents
Info
- Publication number
- JPS6228463B2 JPS6228463B2 JP12928582A JP12928582A JPS6228463B2 JP S6228463 B2 JPS6228463 B2 JP S6228463B2 JP 12928582 A JP12928582 A JP 12928582A JP 12928582 A JP12928582 A JP 12928582A JP S6228463 B2 JPS6228463 B2 JP S6228463B2
- Authority
- JP
- Japan
- Prior art keywords
- chromium
- mask
- defects
- deposited
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 43
- 229910052804 chromium Inorganic materials 0.000 claims description 38
- 239000011651 chromium Substances 0.000 claims description 38
- 230000007547 defect Effects 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 8
- 230000002950 deficient Effects 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 150000001844 chromium Chemical class 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
【発明の詳細な説明】
本発明はガラス基板表面に所望形状に金属クロ
ミウム膜を被着せしめたクロムマスクに於ける欠
損欠陥を修正するクロムマスクの修正方法に関す
る。半導体・集積回路は年々微細化・高密度化さ
れており、それに伴つてフオトマスクに要求され
る品質も厳しいものとなつて来た。その結果マス
クの材質も金属クロミウムをパターン材とするハ
ードマスクが主流となりつつある。フオトマスク
の品質の中で、欠陥は素子の製造歩留りに大きく
影響するものであり、もちろん無欠陥マスクが望
ましい。しかし通常のマスク製造工程で無欠陥マ
スクが得られる確率は極めて低く、数個の欠陥を
含む場合が多い。従つて無欠陥マスクを得るに
は、これ等の欠陥を何らかの方法で修正する必要
がある。クロムハードマスクにおいては、クロム
の黒点が残る“残留欠陥”と、クロミウム膜にピ
ンホールが生じる“欠損欠陥”と、の2種類の欠
陥が存在する。残留欠陥は欠陥部にレーザー光を
照射して残留クロムを蒸発させる事により簡単に
修正が可能である。欠損欠陥の修正は、クロムの
リフトオフ法と呼ばれる以下の工程で修正可能で
ある。すなわち、
(1) マスク全面にポジ型フオトレジストを塗布す
る、
(2) 欠陥部にスポツト状の光を照射する、
(3) 現像処理、
(4) 金属クロミウムの蒸着又はスパツタによる堆
積、
(5) レジスト剥離(クロムリフトオフ)、
この方法では、欠損部分のガラス上に堆積した
金属クロミウムにより欠陥を修正するのである
が、現像処理後のガラス表面と堆積した金属クロ
ミウムの密着度が悪いために欠損部分に堆積した
クロミウムがマスク洗浄等の作業で剥離してしま
う惧れがあつた。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a chrome mask repair method for repairing defects in a chrome mask in which a metal chromium film is deposited in a desired shape on the surface of a glass substrate. Semiconductors and integrated circuits are becoming smaller and more dense every year, and the quality required for photomasks has also become stricter. As a result, hard masks whose pattern material is chromium metal are becoming mainstream. In terms of photomask quality, defects greatly affect the manufacturing yield of devices, and of course a defect-free mask is desirable. However, the probability of obtaining a defect-free mask through normal mask manufacturing processes is extremely low, and masks often contain several defects. Therefore, in order to obtain a defect-free mask, it is necessary to correct these defects in some way. There are two types of defects in a chromium hard mask: "residual defects" in which black spots of chromium remain, and "missing defects" in which pinholes appear in the chromium film. Residual defects can be easily corrected by irradiating the defective area with laser light to evaporate residual chromium. The defect can be corrected by the following process called the chromium lift-off method. That is, (1) applying a positive photoresist to the entire surface of the mask, (2) irradiating the defective area with spot light, (3) developing treatment, (4) depositing metallic chromium by vapor deposition or sputtering, (5) ) Resist removal (chromium lift-off): In this method, defects are repaired using metallic chromium deposited on the glass in the defective area, but the defects may be removed due to poor adhesion between the glass surface after development and the deposited metallic chromium. There was a risk that the chromium deposited on the mask would peel off during mask cleaning and other operations.
本発明はこのような問題点に着目して為された
ものであつて、クロムリフトオフ法に於ける現像
処理後のガラス表面と堆積した金属クロミウムの
密着度を増強する方法を提供するものである。本
発明に依りクロムマスクの欠損欠陥のリフトオフ
法に依る修正技術は確立され、容易に無欠陥マス
クを得る事が出来る。 The present invention has been made in view of these problems, and provides a method for enhancing the adhesion between the glass surface and the deposited metal chromium after development in the chromium lift-off method. . According to the present invention, a technique for repairing missing defects in a chrome mask using a lift-off method has been established, and a defect-free mask can be easily obtained.
以下に図面を参照しつつ本発明を詳細に説明す
る。 The present invention will be described in detail below with reference to the drawings.
第1図はクロムマスクの要部の拡大図を示して
おり、ガラス基板1表面に金属クロミウム膜2に
依る所望のパターンが描かれている。尚3はこの
クロミウム膜2の一部が欠落した欠損欠陥であ
る。 FIG. 1 shows an enlarged view of the main part of the chrome mask, in which a desired pattern is drawn on the surface of a glass substrate 1 by a metal chromium film 2. As shown in FIG. Note that 3 is a defect in which a part of the chromium film 2 is missing.
斯るクロムマスクの全面にポジ型のレジスト4
を塗布し、続いてクロミウム膜2の欠損欠陥3の
箇所のみをスポツト露光装置に依り紫外線照射し
た後、現像処理を施し、欠損欠陥3の箇所のみを
レジスト4から露出する(第2図)。 A positive resist 4 is applied to the entire surface of such a chrome mask.
Then, after irradiating ultraviolet rays only at the locations of the defects 3 of the chromium film 2 using a spot exposure device, a development process is performed to expose only the locations of the defects 3 from the resist 4 (FIG. 2).
次にこのマスクを短時間エツチング雰囲気5中
に置いてレジスト4には被われていない露出箇所
を軽くエツチングする(第3図)。 Next, this mask is placed in an etching atmosphere 5 for a short time to lightly etch the exposed areas not covered by the resist 4 (FIG. 3).
続いて金属クロミウム6をマスク全面に蒸着若
しくはスパツタに依り堆積させる(第4図)。こ
の時クロミウム6はレジスト4表面は当然である
が、露出箇所にも同様に堆積される。 Subsequently, metal chromium 6 is deposited on the entire surface of the mask by vapor deposition or sputtering (FIG. 4). At this time, chromium 6 is naturally deposited on the surface of the resist 4, but also on exposed areas.
最後にレジスト4を剥離する事に依つて、該レ
ジスト4上のクロミウム6はリフトオフされ、そ
れ以外の箇所、即ち露出箇所のクロミウム6は残
存し、この残存クロミウム6に依つて金属クロミ
ウム2に依るマスクパターンの欠損欠陥は補修さ
れた事となる(第5図)。 Finally, by peeling off the resist 4, the chromium 6 on the resist 4 is lifted off, and the chromium 6 in other parts, that is, the exposed parts, remains, and this residual chromium 6 is used to remove the chromium 6 from the metal chromium 2. This means that the missing defect in the mask pattern has been repaired (Fig. 5).
ここで上述した本発明の具体的な一実施例につ
いて記す。金属クロミウムパターンを有するフオ
トマスク上に塗布するポジ型レジスト4としては
AZ―1350が用いられ、その厚みは6000Åで90
℃、25分間のベーキング処理が施される。欠損欠
陥3部分をスポツト露光し、60秒間の現像を行つ
た後、フオトエツチヤントをシヤワー状に5秒間
散布した。スパタリング法に依つて1000Åの厚み
で金属クロミウム6を堆積した後、アセトンでレ
ジスト4を剥離したところ、欠損欠陥3のクロミ
ウム6のみが残存した。このクロミウム6は酸に
依るマスク洗浄でも剥離する事はなかつた。 A specific embodiment of the invention described above will now be described. As a positive resist 4 to be applied on a photomask having a metal chromium pattern,
AZ-1350 is used, and its thickness is 6000 Å and 90
Baking treatment is performed at ℃ for 25 minutes. The three defective areas were spot exposed, developed for 60 seconds, and then a photoetchant was sprayed in a shower for 5 seconds. After depositing metal chromium 6 to a thickness of 1000 Å by sputtering, the resist 4 was removed with acetone, and only the chromium 6 in the defect 3 remained. This chromium 6 did not peel off even when the mask was cleaned with acid.
本発明は以上の説明から明らかな如く、クロミ
ウム膜の欠損欠陥をレジスト膜から露出した後、
その露出箇所を軽くエツチングし、その後にクロ
ミウム膜を堆積しているので、堆積クロミウム膜
のガラス基板に対する密着度が高くなり、クロミ
ウムの欠損欠陥を確実に補修する事が出来る。 As is clear from the above description, in the present invention, after the defects in the chromium film are exposed from the resist film,
Since the exposed area is lightly etched and then a chromium film is deposited, the adhesion of the deposited chromium film to the glass substrate is increased, and chromium loss defects can be reliably repaired.
第1図乃至第5図は本発明方法を工程順に示し
た断面図であつて、1はガラス基板、2は金属ク
ロミウム膜、3は欠損欠陥、4はレジスト、6は
堆積レジスト、を夫々示している。
1 to 5 are cross-sectional views showing the method of the present invention in the order of steps, where 1 shows a glass substrate, 2 shows a metal chromium film, 3 shows a defect, 4 shows a resist, and 6 shows a deposited resist, respectively. ing.
Claims (1)
被着せしめたクロムマスクの欠損欠陥を修正する
方法であつて、クロミウム膜の欠損箇所のみをフ
オトレジスト膜から露出し、その後該露出箇所を
軽くエツチングし、続いて基板全面にクロミウム
を堆積した後、上記フオトレジスト膜を除去して
クロミウム膜の欠損箇所を堆積クロミウムにて補
修する事を特徴としたクロムマスクの修正方法。1 A method for repairing defects in a chromium mask in which a chromium film is deposited in a desired shape on the surface of a glass substrate, in which only the defective parts of the chromium film are exposed from the photoresist film, and then the exposed parts are lightly etched. , followed by depositing chromium on the entire surface of the substrate, removing the photoresist film, and repairing defective parts of the chromium film with deposited chromium.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57129285A JPS5919322A (en) | 1982-07-23 | 1982-07-23 | Correction of chromium mask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57129285A JPS5919322A (en) | 1982-07-23 | 1982-07-23 | Correction of chromium mask |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5919322A JPS5919322A (en) | 1984-01-31 |
JPS6228463B2 true JPS6228463B2 (en) | 1987-06-20 |
Family
ID=15005794
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57129285A Granted JPS5919322A (en) | 1982-07-23 | 1982-07-23 | Correction of chromium mask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5919322A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6269269A (en) * | 1985-09-21 | 1987-03-30 | Mitsubishi Electric Corp | Mask for exposure |
KR100356794B1 (en) * | 1999-12-17 | 2002-10-19 | 주식회사 하이닉스반도체 | Method for forming mask in semiconductor device |
-
1982
- 1982-07-23 JP JP57129285A patent/JPS5919322A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5919322A (en) | 1984-01-31 |
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