JPS6269269A - Mask for exposure - Google Patents
Mask for exposureInfo
- Publication number
- JPS6269269A JPS6269269A JP60209788A JP20978885A JPS6269269A JP S6269269 A JPS6269269 A JP S6269269A JP 60209788 A JP60209788 A JP 60209788A JP 20978885 A JP20978885 A JP 20978885A JP S6269269 A JPS6269269 A JP S6269269A
- Authority
- JP
- Japan
- Prior art keywords
- film
- pattern
- defect
- deficit
- parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明はパターン欠損欠陥修正部分が再剥離し難くさ
れた露光用マスク鉦ζ関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an exposure mask ζ in which a pattern defect correction portion is made difficult to peel off again.
第2図は例えば特開昭56−9111824号公報に示
された従来のパターンの欠損欠陥を修正した露光用マス
クを示す断面図であり、図において、(1)は絶縁体基
板であって、ここでは石英基板、(21はパターン膜で
あって、ここではクロム等金属パターンM、ta+は金
属パターン膜(2)の一般1ζピンホールと呼ばれる欠
損欠陥部分近傍をレーザビームで溶融して欠損欠陥部分
を埋めるようにした修正部分である。FIG. 2 is a cross-sectional view showing an exposure mask for correcting a conventional pattern loss defect disclosed in, for example, Japanese Unexamined Patent Publication No. 56-9111824. In the figure, (1) is an insulating substrate; Here, the quartz substrate, (21 is a pattern film, here is a metal pattern M such as chromium, and ta+ is a defect defect formed by melting the vicinity of a defective part generally called a 1ζ pinhole in the metal pattern film (2) with a laser beam. This is a modified part that has been filled in.
従来の露光用マスクは上記のよう暑ζパターンの欠損欠
陥部分を修正したものであるから、半導体製造工程中の
フォトレジストの露光時Cζ欠損欠陥部分からの漏れる
光を減らして意図しない露光部分の発生を無くすように
なっている。Conventional exposure masks are made by correcting the defective portions of the Cζ pattern as described above, so they reduce the light leaking from the Cζ defective portions during exposure of the photoresist during the semiconductor manufacturing process, and eliminate unintended exposed portions. It is designed to eliminate the occurrence.
上記のような従来の露光用マスクでは修正部分(3)が
超音波洗浄時に再剥離しやすいといった問題点があった
。The conventional exposure mask as described above has a problem in that the repaired portion (3) is likely to be peeled off again during ultrasonic cleaning.
この理由としてはパターン膜+21の欠損欠陥部分の絶
縁体基板(1)表面に残留物が存在し、これがレーザに
より上記欠損欠陥部分周辺のパターン@(21の材料を
再溶融して付着させた修正部分(3)の@記基板fζ対
する付着力を低下させていることが考えられる。The reason for this is that there is a residue on the surface of the insulator substrate (1) at the defective part of the patterned film +21, and this is repaired by re-melting and attaching the material of the pattern @ (21) around the defective part using a laser. It is considered that the adhesion force of portion (3) to the substrate fζ is reduced.
この発明は上記のような問題点を解決するためになされ
たもので、パターン膜(2)の欠損欠陥部分を選択的に
除去し、付着力の低下を解消して再剥離の生じ難い露光
用マスクを得ることを目的としている。This invention was made in order to solve the above-mentioned problems, and it selectively removes defective parts of the pattern film (2), eliminates the decrease in adhesion, and makes it difficult to peel off again. The purpose is to obtain a mask.
この発明1ζ係る露光用マスクは、パターン膜を絶縁体
基板上に設け、前記絶縁体基板表面が露出するまで選択
的に除去された前記パターン膜の欠損欠陥部分Fζ補填
膜を埋めるようにしたものである。The exposure mask according to the present invention 1ζ is such that a patterned film is provided on an insulating substrate, and the missing defective portion Fζ of the patterned film that is selectively removed until the surface of the insulating substrate is exposed is filled up. It is.
この発明iζおいては補填膜がパターン膜の欠損欠陥部
分を選択的に除去して露出した絶縁体基板に直接接する
よう1ζしてより強固付着させる。In this invention iζ, the compensation film selectively removes the missing defective portion of the pattern film and is brought into direct contact with the exposed insulating substrate so that it is more firmly attached.
第1図はこの発明の一実施例を示す断面図であり、(8
a)は金属パターン膜(2)の欠損欠陥部分とそのまわ
りの部分とを除去した後(ζ埋められた補填膜であって
従来のものの修正部分(3)fζ対応する部分であり、
この実施例ではクロム膜であり他の符号はいずれも従来
のものと同一のものである。FIG. 1 is a cross-sectional view showing an embodiment of the present invention.
a) is a filling film filled with ζ after removing the defective part of the metal pattern film (2) and the surrounding parts, which corresponds to the corrected part (3) fζ of the conventional one,
In this embodiment, it is a chromium film, and all other symbols are the same as those of the conventional one.
第1図の構造を得る製造工程の一例を第8図(a)ない
しくωを用いて説明する。まず図(a)(ζ示されたパ
ターン(2))ζ欠損欠陥部分(8b)が存在する露光
用マスク表面全面ξζ図0))の如くポジ型フォトレジ
ストt4+のスホット露光部分(4a)を得る。その際
パターン欠陥検査工程であらかじめ求められている欠陥
の大きさ位置に従って照射位置が自在tζコントロール
できる紫外線またはX線レーザを用いて露光するのが望
ましい。これを現像すると図(d)の如く欠陥部分(8
b)より大なる開口のあるレジスト+41のパターンが
得られる。これをマスク1ζドライイオンエツチング等
で図(e)の如くパターン(2)の部分を除去する。全
面fζクロムIE(ae)lP[J(1)の如くスパッ
タ法等で堆積させる。1/シスト(4)を除去すると、
この上のクロム膜が除去され図(2)の如くクロム膜(
8C)のうちパターン(2)中のあらかじめドライオン
エツチングされた部分Cζ埋め込まれた上記補填膜(8
a)が残され前出の第1図の構造が得られる。An example of the manufacturing process for obtaining the structure shown in FIG. 1 will be explained using FIGS. 8(a) to ω. First, the hot exposed portion (4a) of the positive photoresist t4+ is obtain. In this case, it is preferable to use an ultraviolet ray or an X-ray laser whose irradiation position can be freely controlled according to the size and position of the defect determined in advance in the pattern defect inspection process. When this is developed, the defective area (8
b) Resist +41 pattern with larger openings is obtained. The pattern (2) portion is removed by mask 1ζ dry ion etching or the like as shown in Figure (e). The entire surface fζ chromium IE(ae)lP[J(1) is deposited by sputtering or the like. 1/When cyst (4) is removed,
The chromium film on this is removed and the chromium film (
8C), the above-mentioned filling film (8C) is embedded in the dry-etched portion Cζ in pattern (2).
a) is left and the structure shown in FIG. 1 described above is obtained.
この実施例は上記のように構成したので補填膜(3a)
が欠損欠陥部分を塞ぐので従来のものと同様の修正され
た露光用マスクが得られる。Since this example was constructed as described above, the filling film (3a)
Since the mask fills up the defective portion, a corrected exposure mask similar to the conventional one can be obtained.
以上説明かられかるように補填膜(8a)がパターン(
2)の欠損欠陥部分で基板(1)表面に直接接するよう
になっているため、より強固fζ付着でき前記の問題点
が解決されることは明白である。As can be seen from the above explanation, the filling film (8a) has a pattern (
It is clear that since the defective portion 2) is in direct contact with the surface of the substrate (1), fζ can be more firmly attached and the above-mentioned problem can be solved.
なお、上記実施例ではパターン(2)の欠損欠陥部分と
その周辺を除去した所1ζ補填膜(8a)を埋めるよう
にしたが、上記欠損欠陥部分の一部を除去したのみでも
同様の効果を有することは明白である。In the above example, the missing defective part of pattern (2) and its surroundings were removed and the 1ζ filling film (8a) was filled in, but the same effect could be obtained even if only a part of the missing defective part was removed. It is clear that it has.
また、上記実施例では補填膜(8a)、金属パターン膜
(2)はいずれもクロムである場合Eζついて述べたが
、それぞれ独立fζモリブデンタングステン等の金属や
これらの炭化物など不透明な他の材料であ−】でも同様
の効果を有す。Furthermore, in the above embodiment, the case where Eζ is described is that both the filling film (8a) and the metal pattern film (2) are made of chromium, but each may be made of other opaque materials such as metals such as molybdenum tungsten or carbides thereof. A-] has the same effect.
また上記実施例では補填膜(3a)はパターン膜(2)
の除去された部分1ζ丁度収まるようになっていたが、
この部分よりはみ出すようになってもよい。Further, in the above embodiment, the supplementary film (3a) is the patterned film (2).
The removed part 1ζ was able to fit exactly, but
It may protrude beyond this part.
この発明は以上説明したとおり、パターン膜の欠損欠陥
部分を選択的に除去し露出した絶縁体基板に直接補填膜
が接するようにしたので、この補填膜がより強固εζ付
着し再剥離の生じ・稚い露光用マスクが得られる効果が
ある。As explained above, in this invention, the defective portion of the patterned film is selectively removed and the compensation film is brought into direct contact with the exposed insulating substrate, so that the compensation film adheres more firmly to εζ, thereby preventing re-peeling. This has the effect of providing a cheap exposure mask.
@1図はこの発明の一実施例を示す断面図、第2図は従
来の露光用マスクを示す断面図、第3図(a)ないしく
2)はこの発明の第1図の構造を得る製造工程の一例を
示す一連の断面図である。
図(ζおいて、(1)は絶縁体基板、(2)はパターン
膜、(8a)は補填膜である。
なお各図中、同一符号は同一または相当部分を示す。@ Figure 1 is a sectional view showing an embodiment of this invention, Figure 2 is a sectional view showing a conventional exposure mask, and Figure 3 (a) or 2) shows the structure of Figure 1 of this invention. It is a series of sectional views showing an example of a manufacturing process. In the figure (ζ), (1) is an insulating substrate, (2) is a pattern film, and (8a) is a supplementary film. In each figure, the same reference numerals indicate the same or corresponding parts.
Claims (1)
体基板表面が露出するまで選択的に除去された前記パタ
ーン膜の欠損欠陥部分を埋める補填膜とを 備えた露光用マスク。(1) An exposure mask comprising a pattern film provided on an insulator substrate and a compensation film that fills in the defective portion of the pattern film that has been selectively removed until the surface of the insulator substrate is exposed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60209788A JPS6269269A (en) | 1985-09-21 | 1985-09-21 | Mask for exposure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60209788A JPS6269269A (en) | 1985-09-21 | 1985-09-21 | Mask for exposure |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6269269A true JPS6269269A (en) | 1987-03-30 |
Family
ID=16578604
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60209788A Pending JPS6269269A (en) | 1985-09-21 | 1985-09-21 | Mask for exposure |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6269269A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5919322A (en) * | 1982-07-23 | 1984-01-31 | Sanyo Electric Co Ltd | Correction of chromium mask |
JPS6046556A (en) * | 1983-08-24 | 1985-03-13 | Hoya Corp | Manufacture of photomask |
-
1985
- 1985-09-21 JP JP60209788A patent/JPS6269269A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5919322A (en) * | 1982-07-23 | 1984-01-31 | Sanyo Electric Co Ltd | Correction of chromium mask |
JPS6046556A (en) * | 1983-08-24 | 1985-03-13 | Hoya Corp | Manufacture of photomask |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH05190755A (en) | Flexible circuit wiring board and manufacture thereof | |
JP5180549B2 (en) | Photomask bridge repair method | |
US5981110A (en) | Method for repairing photomasks | |
KR100809331B1 (en) | Mask and method for fabricating the same | |
JPH1115127A (en) | Halftone phase shift mask, its mask blank, production and defect correction method of halftone phase shift mask | |
JPS6269269A (en) | Mask for exposure | |
JPS6267550A (en) | Exposuring mask | |
US6830853B1 (en) | Chrome mask dry etching process to reduce loading effect and defects | |
JP2000321754A (en) | Method for modifying phase inversion mask of semiconductor device | |
JP2008187322A (en) | Manufacturing method of mesa type piezoelectric vibrating element | |
JP2803259B2 (en) | Repair method of mask pattern defect | |
JPH0683033A (en) | Phase shift mask and its production | |
JPH10270967A (en) | Manufacture of crystal vibrator | |
JPH08264533A (en) | Patterning method | |
JPS60235422A (en) | Correction of defect of mask pattern | |
JPS6053872B2 (en) | How to fix a light-blocking mask | |
JPH06332154A (en) | Method for correcting mask | |
JP2003121987A (en) | Method for fabricating photomask | |
JPS58178521A (en) | Mask for manufacturing integrated circuit | |
JPH0440456A (en) | Manufacture of photomask | |
US7097948B2 (en) | Method for repair of photomasks | |
JPH0833655B2 (en) | Photomask correction method | |
JPH06260382A (en) | Manufacture of semiconductor device | |
JPS63218959A (en) | Correcting method for photomask pattern | |
JPH04112577A (en) | Correcting method of conductive pattern |