JPS6267164A - Vapor depositing apparatus - Google Patents

Abstract

PURPOSE:To reduce defects in a thin film device and to improve the reliability of the device by carrying out vapor deposition in two steps with the 1st evaporating source and the 2nd evaporating source formed by depositing a substance evaporated from the 1st evaporating source. CONSTITUTION:This vapor depositing apparatus is composed essentially of the 1st evaporating source heated with a heating means, the 2nd evaporating source and a substrate placed opposite to the 2nd evaporating source. The 2nd evaporating source is a deposit confronting the 1st evaporating source and having the same shape as the substrate or a waved surface shape. A substance evaporated from the 1st evaporating source such as a granular material is deposited and the resulting 2nd evaporating source is heated to form a film on the substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION [Summary] In a marking apparatus for manufacturing thin film devices, the deposition is performed in two stages to avoid the occurrence of F-thin film defects due to the effects of the first weed killing process.

[Industrial application field]

The present invention relates to a vapor deposition apparatus for forming a thin film, and more particularly to a vapor deposition apparatus that uses two stages of evaporation sources and is capable of forming a 'yJ film with few defects.

[Conventional technology]

The vacuum deposition method is used for insulating films in semiconductor devices.

It is widely used in the production of thin film devices, such as the formation of wiring, protective films, etc., and the formation of thin films in optical discs. When forming these thin film devices by vapor deposition, the presence of defects in the thin film is often a problem.

In other words, if a lump the size of several nine planes is incorporated into a thin film, it will cause an insulation failure in an insulating film, a pinhole in a protective film, and a signal error in an optical disc.

In general vapor deposition equipment, materials such as Cr, A/ZnS, etc. are placed in a crucible, container, etc. so that they can be heated with an electron beam or a heat source such as a heater, and from there materials such as C are vapor-deposited toward the substrate. At this time, it was found that the ease with which thin film defects occur largely depends on the shape of the material to be deposited in the crucible, especially for Cr.

With sublimable substances such as ZnS, the shape of the material is irregularly shaped particles, so the shape is preserved during vapor deposition, and the temperature rises rapidly at the acute-angled portion during heating, causing the acute-angled portion to be repelled. There is a problem in that the particles reach the substrate C and enter the film, causing defects.

[Problem that the invention seeks to solve]

The present invention aims to provide a vapor deposition apparatus that can reduce the occurrence of defects in a deposited thin film.

In an attempt to avoid the occurrence of defects, the inventors of the present invention conducted vapor deposition by using a single ingot of vapor deposition material and smoothing the surface facing the substrate, and found that it was effective. For example, when Cr is vapor-deposited by electron beam heating, the density of defects of 1 μ- or more on the substrate is approximately 400 defects/am” if irregularly shaped particles are used. When evaporation is performed using a Cr evaporation source whose top surface is as smooth as the substrate surface, the defect density is 10
However, when the same evaporation material was used many times, the number of defects increased. This is because the surface of the Cr ingot was gouged by the electron beam, and the original surface shape changed. This is because the evaporation conditions become closer to evaporation from granular Cr.Therefore, in order to maintain a constant defect density, the evaporation material must be replaced frequently, which is not only uneconomical but also In the so-called load-lock type, in which the deposition chamber and substrate preparation chamber are separated, frequent replacement is inconvenient.

[Means for solving problems]

The present inventor places a heatable evaporation object facing the first evaporation source so that its surface is approximately the same shape as the substrate, or has its surface undulated, and heats the object. They discovered that defects in the film can be reduced by two-stage vapor deposition in which the film is formed on the substrate, and the present invention was completed.

[For production]

According to the invention, a conventional evaporation source of a vapor deposition apparatus is used as a first evaporation source, and the evaporation material, for example from a granular material, is deposited on a second evaporation source provided according to the invention. Next, the object to be deposited is heated as a second evaporation source to evaporate the attached film and form a film on the substrate. The surface of the film on the second evaporation source that has substantially the same shape as the substrate refers to a surface that has a substantially flat shape, since the substrate is generally a flat plate. The surface of the second evaporation source is smooth and has no edges, so even if it is a sublimable substance, particles will not fly out.
Defects in the film can be reduced.

Furthermore, in the present invention, by increasing the evaporation area of the second evaporation source, the surface of the second evaporation source can be made to have undulations in order to achieve a high evaporation rate.

In the present invention, undulation refers to a surface shape consisting of smooth convex portions and four parts. Such a surface has no edges, which reduces defects in the film and increases the deposition rate.

Since the second evaporation source is replenished with C'' etc. from the evaporation source in cylinder 1 every time vapor deposition is performed, the material contained in the first evaporation source can be used to the end regardless of its shape, whether it is granular or otherwise.

The present invention will be explained below by means of preferred examples.

〔Example〕

FIG. 1 shows an electron beam heating source 2 in a vacuum chamber 1;
In a vapor deposition apparatus having a general structure in which a substrate 3 is arranged, a heating means (
A second evaporation source 4 having a second evaporation source (not shown) is arranged.

The structure of the second evaporation source is shown in FIG. As shown in FIG. 2, the second evaporation source has an insulating spacer 6 inserted between the two flat plates 5A and 5B so that current can be selectively passed through either of the flat plates 5A and 5B. It is configured. The two flat plates 5A and 5B are made of Ta.

Made of high-melting-point, conductive materials such as Mo and W, these 6φ openings are made of high-melting point and conductive materials. , I8 continuation 4.

The two lower roots 5A, 5tN:: are outside of the vacuum chamber 1, and the 1st year old and 1st year (Ha) 1. Oxide 4 can be turned off at °C through the electric wire 7. After evacuation, apply a layer of evaporated material after evacuating (l!N).
Plate 5 All Zill electric current 7 The stiffness is force B and the determining substance is evaporated into base ten anti I and dried.

In the meantime, the film is also formed from the first coating layer 2 using electricity and heat, and the film is laminated on the first layer 5B in preparation for spreading onto the next substrate 3. In the next evaporation, +N5A, 51
(Invert υζ・)・− If vapor deposition is performed on the substrate 3 by heating the plate 5B.

In FIG. 3, the electronic beam 1 in the vacuum chamber 1, the first heating source d92, and the second heating device d92 have heating means.
The evaporation source 8, each part 8A, 8B of which is attached to two substrates 3.
3' so as to face each other.

After evacuation, the first evaporation source 2 of electric beam and heat
The deposition material is evaporated from there toward the second evaporation source 8. When the second evaporation source 8 is also heated, the M
Temporary 3. Evaporation occurs toward 3'. ] When the vapor deposition on the first substrate 3, 3' is completed, the stiff substrate is taken out of the vacuum chamber 1 and the next substrate is spread in the same manner. The material can be used in the last) F.

Another embodiment of the second evaporation source will be described with reference to FIG.

Two plates 10 and 10' having cross sections as shown are attached with an insulator 11 in between. These +N10.10
' is made of a high melting point metal such as Mo, W, 'ra, etc., and a conductive wire 7 is connected so that electricity can be applied to this plate. Therefore, there are undulations on the surface of the plate 10°10′]
By forming Oa and loa', the evaporation rate from the second grass source is increased by 100O compared to the flat plate treatment 5A and 5B.
It can be as large as 1 A/min or more. Furthermore, the number of defects can be reduced from the conventional 500 defects/s2 to 30 defects/s2.

〔Effect of the invention〕

According to the present invention, the reliability of the device is improved by reducing defects in the thin film device, and the same (first)
It becomes possible to use the evaporation source repeatedly to increase the efficiency of thin film formation.

[Brief explanation of drawings]

FIG. 1 is a schematic diagram showing one embodiment of a vapor deposition apparatus according to the present invention, FIG. 2 is a perspective view showing an example of a second evaporation source, and FIG. 3 is a drawing showing a vapor deposition apparatus of another embodiment. FIG. 4 is a drawing showing another embodiment of the second embodiment. 1... Vacuum chamber, 2... Electron beam heating source, 3... Substrate, 4... Second heating source,
5^, 5B... Flat plate, 6... Insulating spacer, 7... Conductive wire, 8... Second heating source. Figure 1 Figure 2/Figure 4 Figure 3

Claims (1)

[Scope of Claims] 1. In a vapor deposition apparatus including an evaporation source heated by a heating means and a substrate, the evaporation source is a first evaporation source, and a heatable substrate is directed toward the first evaporation source. It is characterized by having a structure in which an evaporator is arranged with a surface shape substantially the same as the substrate, the evaporator is used as a second evaporation source, and the substrate is arranged facing the second evaporation source. Vapor deposition equipment. 2. In a vapor deposition apparatus including an evaporation source heated by a heating means and a substrate, the evaporation source is used as a first evaporation source, and a heatable evaporation target is undulated toward the first evaporation source. What is claimed is: 1. A vapor deposition apparatus characterized in that the substrate is arranged with a surface shape such that the object to be evaporated is used as a second evaporation source, and the substrate is arranged facing the second evaporation source.