JPS6262049B2 - - Google Patents

Info

Publication number
JPS6262049B2
JPS6262049B2 JP57038901A JP3890182A JPS6262049B2 JP S6262049 B2 JPS6262049 B2 JP S6262049B2 JP 57038901 A JP57038901 A JP 57038901A JP 3890182 A JP3890182 A JP 3890182A JP S6262049 B2 JPS6262049 B2 JP S6262049B2
Authority
JP
Japan
Prior art keywords
tellurium
melt
cadmium
crystal
mercury
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57038901A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58154238A (ja
Inventor
Ryoji Ookata
Koki Nagahama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57038901A priority Critical patent/JPS58154238A/ja
Publication of JPS58154238A publication Critical patent/JPS58154238A/ja
Publication of JPS6262049B2 publication Critical patent/JPS6262049B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2913—Materials being Group IIB-VIA materials
    • H10P14/2917—Tellurides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3432—Tellurides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
JP57038901A 1982-03-09 1982-03-09 半導体結晶の製造方法 Granted JPS58154238A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57038901A JPS58154238A (ja) 1982-03-09 1982-03-09 半導体結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57038901A JPS58154238A (ja) 1982-03-09 1982-03-09 半導体結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS58154238A JPS58154238A (ja) 1983-09-13
JPS6262049B2 true JPS6262049B2 (ref) 1987-12-24

Family

ID=12538091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57038901A Granted JPS58154238A (ja) 1982-03-09 1982-03-09 半導体結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS58154238A (ref)

Also Published As

Publication number Publication date
JPS58154238A (ja) 1983-09-13

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