JPS6258603A - Thermistor for detection of exhaust gas temperature - Google Patents
Thermistor for detection of exhaust gas temperatureInfo
- Publication number
- JPS6258603A JPS6258603A JP19889685A JP19889685A JPS6258603A JP S6258603 A JPS6258603 A JP S6258603A JP 19889685 A JP19889685 A JP 19889685A JP 19889685 A JP19889685 A JP 19889685A JP S6258603 A JPS6258603 A JP S6258603A
- Authority
- JP
- Japan
- Prior art keywords
- thermistor
- exhaust gas
- gas temperature
- manganese
- detection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Thermistors And Varistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
[発明の利用分野]
この発明は、排ガス温度の検出用サーミスタに関し、特
に排ガス組成の影響が小さく、排ガスの温度を正確に検
出できるサーミスタに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a thermistor for detecting exhaust gas temperature, and particularly to a thermistor that is less affected by exhaust gas composition and can accurately detect exhaust gas temperature.
[従来技術]
Ti0h等の金属酸化物半導体をち密に焼結し、排ガス
との接触を断つようにしたサーミスタが知られている(
例えば特開昭55−129742号)。このサーミスタ
では焼結をち密にして、排ガスの組成変化への応答を遅
らせ、見掛は上排ガス組成への感度を小さくする。しか
しこの公報によると、リッチ側(当m比λが1以下の領
域)とり一ン側(当量比λが1以上の領域)との間で雰
囲気を切り替えると、サーミスタの抵抗値は1秒間に約
4倍変化する。なお測定温度は710°Cである。[Prior Art] A thermistor is known in which a metal oxide semiconductor such as TiOH is tightly sintered to cut off contact with exhaust gas (
For example, Japanese Patent Application Laid-open No. 129742/1982). This thermistor uses dense sintering to delay response to changes in exhaust gas composition, making it appear less sensitive to exhaust gas composition. However, according to this publication, when the atmosphere is switched between the rich side (region where the equivalence ratio λ is 1 or less) and the rich side (region where the equivalence ratio λ is 1 or more), the resistance value of the thermistor changes in 1 second. It changes by about 4 times. Note that the measurement temperature was 710°C.
[発明の課題]
この発明の課題は、排ガス組成による検出誤差が小さい
サーミスタを得ることに有る。[Problem of the Invention] An object of the present invention is to obtain a thermistor with a small detection error due to exhaust gas composition.
[発明の構成コ
この発明の排ガス温度の検出用サーミスタは、化合物A
SnO3に、(ここにAはBa、Sr、Ca。[Structure of the Invention] The thermistor for detecting exhaust gas temperature of the present invention is made of compound A.
SnO3 (where A is Ba, Sr, Ca.
およびRaからなる群の少なくとも一員を現す。)、そ
の1モル当たり、0.03〜05グラム原子の、Mn、
Cu、WSTa、Co、Ga、Nb5Zn。represents at least one member of the group consisting of and Ra. ), 0.03 to 05 gram atoms per mole thereof, Mn,
Cu, WSTa, Co, Ga, Nb5Zn.
Ni、Crからなる群の少なくとも一員の元素の酸化物
を添加したことを特徴とする特
[実施例]
BaC0:+、5rCOz、CaCO3、Ra C03
を等モル量のSnO2と混合し、空気中にて4時間11
00°Cで仮焼し、ペロブスカイト化合物f3asno
s、5rSn():+、casnO:+、Ra S n
03を得た。化合物の粉砕後に、マンガン等の酸化物
を添加し、300気圧でプレス成型して、一対の電極を
埋設したベレットとした。ベレットを空気中にて4時間
1400°Cで焼結した。得られたベレットはち密で、
はとんど気孔のないものであった。[Example] BaC0:+, 5rCOz, CaCO3, Ra CO3
was mixed with an equimolar amount of SnO2 and heated in air for 4 hours.
Calcinate at 00°C to form perovskite compound f3asno
s, 5rSn():+, casnO:+, RaSn
I got 03. After pulverizing the compound, an oxide such as manganese was added and press molding was performed at 300 atmospheres to form a pellet in which a pair of electrodes was embedded. The pellets were sintered at 1400°C for 4 hours in air. The resulting beret is dense;
It had almost no pores.
加えた酸化物は、その一部がベロブスツJイト化合物中
に侵入して固溶または置換し、大部分が酸化物として析
出しているものと推定される。なお酸化物としての存在
形態は、マンガンがM n t 03やMnaOい銅が
CuOやCLI20、タングステンがW 03、タンタ
ルがTa205、コバルトがCooやCo5tいガリウ
ムがGa2O3、ニオブがNb 205、亜鉛がZnO
,ニッケルがNip、クロムがC「203と推定される
。また仮焼や焼結の条件は適宜に変更できろ。It is presumed that a part of the added oxide penetrates into the Belobstite compound and becomes solid solution or substitute, and most of it precipitates as an oxide. The existing forms of oxides include manganese as Mn t 03 and MnaO, copper as CuO and CLI20, tungsten as W 03, tantalum as Ta205, cobalt as Coo and Co5t, gallium as Ga2O3, niobium as Nb 205, and zinc as oxide. ZnO
, Nickel is estimated to be Nip, and chromium is estimated to be C203.Also, the conditions for calcination and sintering can be changed as appropriate.
他の実施例として、マンガン酸化物を加えたB aS
no 3を、30気圧でプレス成型して、焼結した乙の
を得た。また比較例として、マンガン等の酸化物を加え
ないしのを製造した。As another example, BaS with manganese oxide added
No. 3 was press-molded at 30 atm to obtain sintered No. 3. In addition, as a comparative example, one was produced without adding an oxide such as manganese.
これらのベレットを用いて、第1図のサーミスタ(2)
を製造した。図において、(4)はアルミナ等の基板、
(6)はベレット、(8)、(10)は電極、(12)
、(14)は外部リードである。Using these pellets, the thermistor (2) in Figure 1
was manufactured. In the figure, (4) is a substrate made of alumina, etc.
(6) is a pellet, (8), (10) are electrodes, (12)
, (14) are external leads.
サーミスタ(2)の特性を調へた。当量比λが11の雰
囲気(リーン)、あるいはえが0.9の雰囲気(リッチ
)にサーミスタ(2)を置き、10°C/minの昇温
速度で、300°Cから800°Cに昇温する。この間
の抵抗値を測定し、サーミスタ(2)の特性を評価した
。The characteristics of the thermistor (2) were investigated. The thermistor (2) was placed in an atmosphere with an equivalence ratio λ of 11 (lean) or an atmosphere with an equivalence ratio of 0.9 (rich), and the temperature was raised from 300°C to 800°C at a rate of 10°C/min. Warm up. The resistance value during this time was measured and the characteristics of the thermistor (2) were evaluated.
第2図にマンガンを加えたBa5nO3(プレス圧30
0気圧)の特性を示す。なお以下では、Ba5n−03
等の1モルにたいして、加えた酸化物中の金属か0.0
1グラム原子である場合を、1モル%、あるいは単に1
%として表示する。Figure 2 shows Ba5nO3 with manganese added (press pressure 30
0 atm). In addition, below, Ba5n-03
For 1 mole of etc., the metal in the added oxide is 0.0
1 gram atom is 1 mole%, or simply 1
Display as %.
10%のマンガンを加えると、排ガス組成への感度か失
イっれ、正確なサーミスタとして用いろことができる。When 10% manganese is added, sensitivity to exhaust gas composition is lost and it can be used as an accurate thermistor.
なお比較のため、単味のB a S n 03の結果を
示す。For comparison, the results of plain B a S n 03 are shown.
第3図に10%の銅を加えたr3asno*の結果を、
第・1図に10%のマンガンを加えたSrSnO3の結
果を、第5図に10%のマンガンを加えたCa5n−0
3の結果を示す。いずれら排ガス組成の影響は小さく、
正確に温度を検出できる。Figure 3 shows the results of r3asno* with 10% copper added.
Figure 1 shows the results for SrSnO3 with 10% manganese added, and Figure 5 shows the results for Ca5n-0 with 10% manganese added.
The results of 3 are shown below. In either case, the influence of exhaust gas composition is small;
Can accurately detect temperature.
各実施例の結果を、まとめて表1、表2に示す。The results of each example are summarized in Tables 1 and 2.
表 1 13aSn03系
R1/Rr3)
No t) 添加物2) 700’C800’
C1* Mn15 IQ2
Mn 5 2 33
Mn1O1,71,84Mn30 1
.3 1.454) Mn10 2
2.56* Mn1O00,3
7* Cu I 6 1
08 Cu10 2.1 2.
39 WIo 1.8 2.
010 Ta10 2 2.5
11 Co10 2.5 412
Zn104 613*
TiO210300
14* 5nO210350
1)主+A料は全てBaSnO3、*は比較例、2)モ
ル%単位、
3) リーン側(λが1.1)とリッヂ側(λが09)
とで、毎分jO°Cの速度で300℃から800°Cへ
昇温し、抵抗値を測定する、各温度でのリーン側とリッ
チ側との抵抗値の比を示す、
4) プレス圧30気圧。Table 1 13aSn03 system R1/Rr3) Not) Additive 2) 700'C800'
C1* Mn15 IQ2
Mn 5 2 33
Mn1O1,71,84Mn30 1
.. 3 1.454) Mn10 2
2.56* Mn1O00,3 7* Cu I 6 1
08 Cu10 2.1 2.
39 WIo 1.8 2.
010 Ta10 2 2.5
11 Co10 2.5 412
Zn104 613*
TiO210300 14* 5nO210350 1) Main +A materials are all BaSnO3, * is comparative example, 2) Mol% unit, 3) Lean side (λ is 1.1) and ridge side (λ is 09)
4) Press pressure 30 atmospheres.
表 2 他の半導体1)
R1/Rr
半導体2) 添加物 700℃ 800’C
3rSnO3* Mn 1 5 9/l
Mn10 1.3 1.5”
Cu10 1.2 1.5〃 WIO1
,3+、5
〃Co10 2 2.5
〃Ga1O22,8
〃Zn10 3 4
〃Ni1O34
ツノ Cr1Q 3
4表2続き
fll/Rr
批弘±2) 添加物 700°C800°CC
aSnO3* Mn I 5 8〃Mn
1O1,41,6
〃 Cu 5 l 6 2
〃Ta1O1,31,5
〃Col0 1.5 2.3
〃Ga10 1.6 2.3
” Nb10 1.5 2.2RaSn0
3Mnl O1,82
1)測定条件等は表1に同じ、
2)*は比較例。Table 2 Other semiconductors 1) R1/Rr Semiconductor 2) Additives 700°C 800'C
3rSnO3* Mn 1 5 9/l
Mn10 1.3 1.5”
Cu10 1.2 1.5 WIO1
,3+,5 〃Co10 2 2.5 〃Ga1O22,8 〃Zn10 3 4 〃Ni1O34 Horn Cr1Q 3
4 Table 2 continued flll/Rr 弘弘±2) Additives 700°C800°CC
aSnO3* Mn I 5 8〃Mn
1O1,41,6 〃Cu 5 l 6 2 〃Ta1O1,31,5 〃Col0 1.5 2.3 〃Ga10 1.6 2.3 ” Nb10 1.5 2.2RaSn0
3Mnl O1,82 1) Measurement conditions are the same as in Table 1. 2) * indicates a comparative example.
各表の結果から、以下のことがわかる。マンガン等の酸
化物の添加用については、1%では不充分であるが、5
%では充分な効果が得られる(表1の試料I、2)。一
方100%のマンガンを加えろと、サーミスタはBa5
nOs等上りムマンガン酸化物に類似の性質を示す(表
1の試料6)。The following can be seen from the results in each table. For addition of oxides such as manganese, 1% is insufficient, but 5%
%, a sufficient effect can be obtained (Samples I and 2 in Table 1). On the other hand, if you add 100% manganese, the thermistor will be Ba5.
It exhibits properties similar to manganese oxides such as nOs (Sample 6 in Table 1).
酸化物の種類について検討すると、マンガン、銅、タン
グステン、タンタルは類似の性質を示し、かつ最も効果
が大きい。これに次ぐものは、コバルト、ガリウム、ニ
オブであり、亜鉛、ニッケル、クロムは効果がやや小さ
い。When considering the types of oxides, manganese, copper, tungsten, and tantalum exhibit similar properties and are most effective. This is followed by cobalt, gallium, and niobium, with zinc, nickel, and chromium being somewhat less effective.
[発明の効果]
この発明では、排ガス組成の影響が小さく、排カスの温
度を正確に検出できろサーミスタが得られる。[Effects of the Invention] The present invention provides a thermistor that is less affected by exhaust gas composition and can accurately detect the temperature of exhaust gas.
第1図は実施例の排ガス温度の検出用サーミスタの正面
図、第2図〜第5図は実施例の特性図である。FIG. 1 is a front view of a thermistor for detecting exhaust gas temperature according to an embodiment, and FIGS. 2 to 5 are characteristic diagrams of the embodiment.
Claims (1)
、Ca、およびRaからなる群の少なくとも一員を現す
。)、 Mn、Cu、W、Ta、Co、Ga、Nb、Zn、Ni
、Crからなる群の少なくとも一員の元素の酸化物を添
加すると共に、 その添加量は酸化物中の金属元素に換算して、ASnO
_31モル当たり0.03〜0.5グラム原子であるこ
とを特徴とする、排ガス温度の検出用サーミスタ。(1) Compound ASnO_3 (where A is Ba, Sr
, Ca, and Ra. ), Mn, Cu, W, Ta, Co, Ga, Nb, Zn, Ni
, Cr, and the amount added is equivalent to the metal element in the oxide.
A thermistor for detecting exhaust gas temperature, characterized in that it contains 0.03 to 0.5 gram atoms per mole.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19889685A JPS6258603A (en) | 1985-09-09 | 1985-09-09 | Thermistor for detection of exhaust gas temperature |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19889685A JPS6258603A (en) | 1985-09-09 | 1985-09-09 | Thermistor for detection of exhaust gas temperature |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6258603A true JPS6258603A (en) | 1987-03-14 |
Family
ID=16398739
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19889685A Pending JPS6258603A (en) | 1985-09-09 | 1985-09-09 | Thermistor for detection of exhaust gas temperature |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6258603A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55121961A (en) * | 1979-03-16 | 1980-09-19 | Tdk Electronics Co Ltd | High frequency heat generator |
-
1985
- 1985-09-09 JP JP19889685A patent/JPS6258603A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55121961A (en) * | 1979-03-16 | 1980-09-19 | Tdk Electronics Co Ltd | High frequency heat generator |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8466771B2 (en) | Sintered metal oxide for thermistor, thermistor element, thermistor temperature sensor, and method for producing sintered metal oxide for thermistor | |
US10961159B2 (en) | Ceramic material, component, and method for producing the component | |
US5602324A (en) | Gas sensor and gas discriminating method | |
US4729852A (en) | Oxide semiconductor for thermistor | |
US5858902A (en) | Semiconducting ceramic compounds having negative resistance-temperature characteristics with critical temperatures | |
EP0418810B1 (en) | Thermistor element and gas sensor using the same | |
JP2004221519A (en) | Sintered compact for thermistor element and manufacturing method therefor,thermistor element and temperature sensor | |
JPS6258603A (en) | Thermistor for detection of exhaust gas temperature | |
Ishihara et al. | Capacitive-type gas sensor for the selective detection of carbon dioxide | |
EP0697594B1 (en) | Ion selective ceramic membrane | |
JP2002087882A (en) | Semiconductor ceramic composition, semiconductor ceramic device using the same and manufacturing method thereof | |
JPS59155102A (en) | Moisture sensitive element | |
JP2008294326A (en) | Thick-film thermistor composition and method of manufacturing the same, and thick-film thermistor element | |
JP3393261B2 (en) | Porcelain composition for thermistor | |
JPS6157571B2 (en) | ||
JPS6325681B2 (en) | ||
JPS6258150A (en) | Exhaust gas sensor | |
KR840000260B1 (en) | Temperature-responsive element | |
JPS635882B2 (en) | ||
JP2004217500A (en) | Sintered compact for thermistor element and method for producing the same, thermistor element and temperature sensor | |
JPS6116933B2 (en) | ||
JPH05302908A (en) | Moisture sensitive element | |
JPH0811709B2 (en) | Positive characteristic semiconductor porcelain with reduction resistance | |
JPS5832401A (en) | Humidity sensitive resistor | |
JPS6376401A (en) | Humidity sensor |