JPS6257093B2 - - Google Patents
Info
- Publication number
- JPS6257093B2 JPS6257093B2 JP54145092A JP14509279A JPS6257093B2 JP S6257093 B2 JPS6257093 B2 JP S6257093B2 JP 54145092 A JP54145092 A JP 54145092A JP 14509279 A JP14509279 A JP 14509279A JP S6257093 B2 JPS6257093 B2 JP S6257093B2
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- type
- impurity
- impurities
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 22
- 150000001875 compounds Chemical class 0.000 claims description 20
- 239000012535 impurity Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 230000005855 radiation Effects 0.000 description 5
- 239000000370 acceptor Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14509279A JPS5669824A (en) | 1979-11-09 | 1979-11-09 | Impurity-adding method for compound semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14509279A JPS5669824A (en) | 1979-11-09 | 1979-11-09 | Impurity-adding method for compound semiconductor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5669824A JPS5669824A (en) | 1981-06-11 |
JPS6257093B2 true JPS6257093B2 (fr) | 1987-11-30 |
Family
ID=15377187
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14509279A Granted JPS5669824A (en) | 1979-11-09 | 1979-11-09 | Impurity-adding method for compound semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5669824A (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5561530B2 (ja) * | 2010-03-31 | 2014-07-30 | 古河電気工業株式会社 | 窒化物半導体の炭素ドーピング方法、半導体素子の製造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5144867A (en) * | 1974-08-16 | 1976-04-16 | Siemens Ag | Ichonidoobusareta p gatahandotaizairyono seizohoho |
-
1979
- 1979-11-09 JP JP14509279A patent/JPS5669824A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5144867A (en) * | 1974-08-16 | 1976-04-16 | Siemens Ag | Ichonidoobusareta p gatahandotaizairyono seizohoho |
Also Published As
Publication number | Publication date |
---|---|
JPS5669824A (en) | 1981-06-11 |
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