JPS6256599B2 - - Google Patents

Info

Publication number
JPS6256599B2
JPS6256599B2 JP54086927A JP8692779A JPS6256599B2 JP S6256599 B2 JPS6256599 B2 JP S6256599B2 JP 54086927 A JP54086927 A JP 54086927A JP 8692779 A JP8692779 A JP 8692779A JP S6256599 B2 JPS6256599 B2 JP S6256599B2
Authority
JP
Japan
Prior art keywords
level
pair
data lines
circuit
common data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54086927A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5613584A (en
Inventor
Yoshio Noguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8692779A priority Critical patent/JPS5613584A/ja
Priority to US06/081,370 priority patent/US4272834A/en
Priority to DE2954688A priority patent/DE2954688C2/de
Priority to DE19792940500 priority patent/DE2940500A1/de
Publication of JPS5613584A publication Critical patent/JPS5613584A/ja
Publication of JPS6256599B2 publication Critical patent/JPS6256599B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP8692779A 1978-10-06 1979-07-11 Setting circuit for data line potential Granted JPS5613584A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP8692779A JPS5613584A (en) 1979-07-11 1979-07-11 Setting circuit for data line potential
US06/081,370 US4272834A (en) 1978-10-06 1979-10-03 Data line potential setting circuit and MIS memory circuit using the same
DE2954688A DE2954688C2 (de) 1978-10-06 1979-10-05 Halbleiterspeicher
DE19792940500 DE2940500A1 (de) 1978-10-06 1979-10-05 Datenleitungs-potentialeinstellschaltung und mis-speicheranordnung mit einer derartigen schaltung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8692779A JPS5613584A (en) 1979-07-11 1979-07-11 Setting circuit for data line potential

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP63199859A Division JPH01146186A (ja) 1988-08-12 1988-08-12 Ｍｉｓメモリ回路
JP1201172A Division JPH0756755B2 (ja) 1989-08-04 1989-08-04 Ｍｉｓメモリ回路

Publications (2)

Publication Number Publication Date
JPS5613584A JPS5613584A (en) 1981-02-09
JPS6256599B2 true JPS6256599B2 (enrdf_load_stackoverflow) 1987-11-26

Family

ID=13900488

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8692779A Granted JPS5613584A (en) 1978-10-06 1979-07-11 Setting circuit for data line potential

Country Status (1)

Country Link
JP (1) JPS5613584A (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57208690A (en) * 1981-06-19 1982-12-21 Hitachi Ltd Semiconductor storage device
CA1265343A (en) * 1984-05-07 1990-02-06 Edward Earl Judge Jr. Microfinishing apparatus and method
JPS61139993A (ja) * 1984-12-12 1986-06-27 Hitachi Micro Comput Eng Ltd スタテイツク型ｒａｍ
JPS6254891A (ja) * 1985-09-03 1987-03-10 Sony Corp ライトリカバリ回路
JPS6267790A (ja) * 1985-09-20 1987-03-27 Hitachi Vlsi Eng Corp スタテイツク型ｒａｍ
JPH087998B2 (ja) * 1985-11-21 1996-01-29 ソニー株式会社 メモリ−回路
JPH0756755B2 (ja) * 1989-08-04 1995-06-14 株式会社日立製作所 Ｍｉｓメモリ回路
KR920008763A (ko) * 1990-10-16 1992-05-28 김광호 스테어틱 램의 데이터 라인 등화회로 및 등화방법
JP2906957B2 (ja) * 1993-12-15 1999-06-21 日本電気株式会社 半導体メモリ装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3876887A (en) * 1973-07-18 1975-04-08 Intel Corp Mos amplifier
JPS52113131A (en) * 1975-09-08 1977-09-22 Toko Inc Sensing amplifier for one transistor
US4110842A (en) * 1976-11-15 1978-08-29 Advanced Micro Devices, Inc. Random access memory with memory status for improved access and cycle times
US4151603A (en) * 1977-10-31 1979-04-24 International Business Machines Corporation Precharged FET ROS array
JPS5485944U (enrdf_load_stackoverflow) * 1977-11-30 1979-06-18

Also Published As

Publication number Publication date
JPS5613584A (en) 1981-02-09

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