JPS625658U - - Google Patents
Info
- Publication number
- JPS625658U JPS625658U JP9632085U JP9632085U JPS625658U JP S625658 U JPS625658 U JP S625658U JP 9632085 U JP9632085 U JP 9632085U JP 9632085 U JP9632085 U JP 9632085U JP S625658 U JPS625658 U JP S625658U
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- electrode
- intersection
- matrix substrate
- row
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims 2
- 230000001681 protective effect Effects 0.000 claims 1
Landscapes
- Liquid Crystal (AREA)
Description
第1図は本考案の一実施例を示した正面図、第
2図は他の例を示した正面図、第3図はさらに他
の例を示した正面図、第4図は従来例を示した正
面図、第5図は第4図―線断面図である。
1……基板、2……行電極、6……列電極、8
……絶縁膜、10……絶縁膜。
Fig. 1 is a front view showing one embodiment of the present invention, Fig. 2 is a front view showing another example, Fig. 3 is a front view showing still another example, and Fig. 4 is a front view showing a conventional example. The front view shown in FIG. 5 is a sectional view taken along the line of FIG. 4. 1...Substrate, 2...Row electrode, 6...Column electrode, 8
...Insulating film, 10 ...Insulating film.
Claims (1)
交点に、非線形素子を付加した画素を形成したテ
クテイブマトリクス基板において、行電極と列電
極のクロス部に絶縁膜を介在させ、この絶縁膜の
上層に形成される電極の上記絶縁膜の厚みによる
段差部の長さがこの電極の幅より長くなるように
上記絶縁膜を形成したことを特徴とするテクテイ
ブマトリクス基板。 In a tactical matrix substrate in which row electrodes and column electrodes are formed on the same substrate, and pixels with nonlinear elements added at each intersection are formed, an insulating film is interposed at the intersection of the row electrode and column electrode, and this insulating film A protective matrix substrate, characterized in that the insulating film is formed such that the length of the stepped portion of the electrode formed in the upper layer due to the thickness of the insulating film is longer than the width of the electrode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9632085U JPS625658U (en) | 1985-06-25 | 1985-06-25 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9632085U JPS625658U (en) | 1985-06-25 | 1985-06-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS625658U true JPS625658U (en) | 1987-01-14 |
Family
ID=30961927
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9632085U Pending JPS625658U (en) | 1985-06-25 | 1985-06-25 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS625658U (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60236266A (en) * | 1984-05-10 | 1985-11-25 | Matsushita Electric Ind Co Ltd | Semiconductor device |
-
1985
- 1985-06-25 JP JP9632085U patent/JPS625658U/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60236266A (en) * | 1984-05-10 | 1985-11-25 | Matsushita Electric Ind Co Ltd | Semiconductor device |