JPS625658U - - Google Patents

Info

Publication number
JPS625658U
JPS625658U JP9632085U JP9632085U JPS625658U JP S625658 U JPS625658 U JP S625658U JP 9632085 U JP9632085 U JP 9632085U JP 9632085 U JP9632085 U JP 9632085U JP S625658 U JPS625658 U JP S625658U
Authority
JP
Japan
Prior art keywords
insulating film
electrode
intersection
matrix substrate
row
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9632085U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9632085U priority Critical patent/JPS625658U/ja
Publication of JPS625658U publication Critical patent/JPS625658U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例を示した正面図、第
2図は他の例を示した正面図、第3図はさらに他
の例を示した正面図、第4図は従来例を示した正
面図、第5図は第4図―線断面図である。 1……基板、2……行電極、6……列電極、
……絶縁膜、10……絶縁膜。
Fig. 1 is a front view showing one embodiment of the present invention, Fig. 2 is a front view showing another example, Fig. 3 is a front view showing still another example, and Fig. 4 is a front view showing a conventional example. The front view shown in FIG. 5 is a sectional view taken along the line of FIG. 4. 1...Substrate, 2...Row electrode, 6...Column electrode, 8
...Insulating film, 10 ...Insulating film.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 行電極および列電極を同一基板上に形成し、各
交点に、非線形素子を付加した画素を形成したテ
クテイブマトリクス基板において、行電極と列電
極のクロス部に絶縁膜を介在させ、この絶縁膜の
上層に形成される電極の上記絶縁膜の厚みによる
段差部の長さがこの電極の幅より長くなるように
上記絶縁膜を形成したことを特徴とするテクテイ
ブマトリクス基板。
In a tactical matrix substrate in which row electrodes and column electrodes are formed on the same substrate, and pixels with nonlinear elements added at each intersection are formed, an insulating film is interposed at the intersection of the row electrode and column electrode, and this insulating film A protective matrix substrate, characterized in that the insulating film is formed such that the length of the stepped portion of the electrode formed in the upper layer due to the thickness of the insulating film is longer than the width of the electrode.
JP9632085U 1985-06-25 1985-06-25 Pending JPS625658U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9632085U JPS625658U (en) 1985-06-25 1985-06-25

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9632085U JPS625658U (en) 1985-06-25 1985-06-25

Publications (1)

Publication Number Publication Date
JPS625658U true JPS625658U (en) 1987-01-14

Family

ID=30961927

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9632085U Pending JPS625658U (en) 1985-06-25 1985-06-25

Country Status (1)

Country Link
JP (1) JPS625658U (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60236266A (en) * 1984-05-10 1985-11-25 Matsushita Electric Ind Co Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60236266A (en) * 1984-05-10 1985-11-25 Matsushita Electric Ind Co Ltd Semiconductor device

Similar Documents

Publication Publication Date Title
JPS625658U (en)
JPS6216927U (en)
JPS6170394U (en)
JPS61190528U (en)
JPS6423087U (en)
JPH0188926U (en)
JPS63134497U (en)
JPH0322225U (en)
JPH0236893U (en)
JPH02133897U (en)
JPS6423029U (en)
JPS6286634U (en)
JPH01168990U (en)
JPS62175696U (en)
JPS62123096U (en)
JPS61139598U (en)
JPS62168598U (en)
JPS61114801U (en)
JPS6388830U (en)
JPS6196447U (en)
JPS6194886U (en)
JPH01125643U (en)
JPS6397135U (en)
JPS61127657U (en)
JPH0253025U (en)