JPS6252962U - - Google Patents
Info
- Publication number
- JPS6252962U JPS6252962U JP14436085U JP14436085U JPS6252962U JP S6252962 U JPS6252962 U JP S6252962U JP 14436085 U JP14436085 U JP 14436085U JP 14436085 U JP14436085 U JP 14436085U JP S6252962 U JPS6252962 U JP S6252962U
- Authority
- JP
- Japan
- Prior art keywords
- main body
- semiconductor laser
- laser beam
- hole
- resonator surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000031700 light absorption Effects 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
Description
第１図はこの考案の半導体レーザ装置の１実施
例の一部の斜視図、第２図は従来の半導体レーザ
装置の一部の切断右側面図である。
１……装置本体、２……透孔、３……透光板、
５……半導体レーザ素子、９……光吸収層、１０
……開口部。
FIG. 1 is a perspective view of a portion of an embodiment of the semiconductor laser device of this invention, and FIG. 2 is a cutaway right side view of a portion of a conventional semiconductor laser device. 1... device main body, 2... transparent hole, 3... transparent plate,
5... Semiconductor laser element, 9... Light absorption layer, 10
……Aperture.
Claims (1)
に装着された透光板と、前記本体内に収納され前
部の共振器面からレーザ光を出射する半導体レー
ザ素子と、前記レーザ光の波長に対する吸収率が
高く前記共振器面に蒸着等により形成された光吸
収層と、前記レーザ光により前記光吸収層の一部
を溶融して前記光吸収層に形成されたレーザ光通
過用の開口部とを備えた半導体レーザ装置。 A device main body having a through hole formed in the front surface, a light transmitting plate attached to the through hole, a semiconductor laser element housed in the main body and emitting a laser beam from a front resonator surface, and the laser beam. a light absorption layer formed on the resonator surface by vapor deposition or the like and having a high absorption rate for a wavelength of A semiconductor laser device having an aperture.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14436085U JPS6252962U (en) | 1985-09-20 | 1985-09-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14436085U JPS6252962U (en) | 1985-09-20 | 1985-09-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6252962U true JPS6252962U (en) | 1987-04-02 |
Family
ID=31054886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14436085U Pending JPS6252962U (en) | 1985-09-20 | 1985-09-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6252962U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62104093A (en) * | 1985-10-30 | 1987-05-14 | Sony Corp | Semiconductor laser |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6016489A (en) * | 1984-06-08 | 1985-01-28 | Hitachi Ltd | Semiconductor laser device |
-
1985
- 1985-09-20 JP JP14436085U patent/JPS6252962U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6016489A (en) * | 1984-06-08 | 1985-01-28 | Hitachi Ltd | Semiconductor laser device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62104093A (en) * | 1985-10-30 | 1987-05-14 | Sony Corp | Semiconductor laser |