JPS6250098A - Power metallurgical device for metallic compound - Google Patents
Power metallurgical device for metallic compoundInfo
- Publication number
- JPS6250098A JPS6250098A JP60190399A JP19039985A JPS6250098A JP S6250098 A JPS6250098 A JP S6250098A JP 60190399 A JP60190399 A JP 60190399A JP 19039985 A JP19039985 A JP 19039985A JP S6250098 A JPS6250098 A JP S6250098A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- powder
- vacuum chamber
- laser beam
- metallic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/16—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed
- B05B7/22—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed electrically, magnetically or electromagnetically, e.g. by arc
- B05B7/228—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed electrically, magnetically or electromagnetically, e.g. by arc using electromagnetic radiation, e.g. laser
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
- B23K26/127—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an enclosure
Abstract
Description
【発明の詳細な説明】
(イ)発明の目的
[産業上の利用分野]
この発明は金属若しくは金属化合物の粉末材料から塊状
の金属化合物を生成するための粉末冶金装置に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION (a) Object of the invention [Field of industrial application] The present invention relates to a powder metallurgy apparatus for producing bulk metal compounds from metal or metal compound powder materials.
[従来の技術]
比較的純度が高く、化学量論的な組成を有する金属化合
物の被膜を生成する技術としでは、イオンブレーティン
グ法が知られでいる。このイオンブレーティング法は第
2図に示すように、真空チャンバ102内に金属材料1
03、電極104及び基板105を配置し、電極104
によって真空チャンバ102内に放電を形成し、管10
6から供給された反応ガスの放電プラズマ中で金属材料
103を電子ビーム加熱するなどの方法で蒸発し、放電
にJ:つて活性化して負の高電圧を印加した基板105
上に堆積さUるものである。[Prior Art] The ion blating method is known as a technique for producing a film of a metal compound having relatively high purity and a stoichiometric composition. In this ion blating method, as shown in FIG.
03, arrange the electrode 104 and the substrate 105, and place the electrode 104
creates an electrical discharge in the vacuum chamber 102, causing the tube 10 to
The metal material 103 is evaporated in the discharge plasma of the reactive gas supplied from 6 by a method such as electron beam heating, activated by the discharge, and a negative high voltage is applied to the substrate 105.
It is what is deposited on top.
[発明が解決しようとする問題点]
しかるに、このイオンブレーティング法では、金属化合
物を生成する速度が遅く、例えば、窒素プラズマ中でチ
タンを蒸発させて窒化チタンを生成する場合で高々毎分
0.5μmの程度である。[Problems to be Solved by the Invention] However, in this ion blating method, the rate of producing metal compounds is slow; for example, when titanium is evaporated in nitrogen plasma to produce titanium nitride, the rate of production is at most 0 per minute. It is about .5 μm.
その他の技術の例としては、化学蒸着法があるが、四・
塩化チタンとアンモニア等のガスを熱的に分解して窒化
チタンを生成する化学蒸着法は上記イオンブレーティン
グ法よりももつと遅く、毎時1μmのオーダであり、こ
れらの方法では高純度でバルクな金属化合物を生成する
には余りにも時間がかかりすぎ実用的でない。Examples of other techniques include chemical vapor deposition;
The chemical vapor deposition method, which generates titanium nitride by thermally decomposing gases such as titanium chloride and ammonia, is slower than the above-mentioned ion blasting method, on the order of 1 μm per hour, and these methods cannot produce high-purity bulk materials. It takes too much time to produce metal compounds to be practical.
一方、金属化合物材はその微粉末を焼結しても生成でき
るが、焼結密度や強度の向上を図るためにバインダーを
必要とし、高純度の材料を得ることが困難である。On the other hand, metal compound materials can be produced by sintering their fine powders, but they require a binder to improve sintered density and strength, making it difficult to obtain highly pure materials.
この発明は上記の如き事情に鑑みてなされたものであっ
て、高純度の金属化合物を迅速に粉末冶金的に生成する
ことができる金属化合物の粉末冶金装置を提供号“るこ
とを目的とするものである。This invention has been made in view of the above circumstances, and an object of the present invention is to provide a powder metallurgy apparatus for metal compounds that can rapidly produce high-purity metal compounds using powder metallurgy. It is something.
(ロ)発明の構成
[問題を解決するための手段]
この目的に対応して、この発明の金属化合物の粉末冶金
装置は、真空チャンバと、前記真空チャンバ内に配設さ
れた基板と前記真空チャンバ内に雰囲気ガスと金属若し
くは金属化合物からなる材料粉末とを供給する供給装置
と、前記真空ブヤンバ内にレーザビームを照射し1ワる
レーザビーム照射装置とを備え、かつ、前記真空ブヤン
バ内に放電を発生さけるに足る負の電圧を前記基板に印
加するように構成したことを特徴としている。(B) Structure of the Invention [Means for Solving the Problem] Corresponding to this object, a powder metallurgy apparatus for a metal compound of the present invention includes a vacuum chamber, a substrate disposed in the vacuum chamber, and the vacuum chamber. A supply device for supplying an atmospheric gas and a material powder made of a metal or a metal compound into a chamber, and a laser beam irradiation device for irradiating a laser beam into the vacuum bouyamba, The present invention is characterized in that it is configured to apply a negative voltage sufficient to avoid generation of discharge to the substrate.
以下、この発明の詳細を一実施例を示す図面について説
明する。Hereinafter, details of the present invention will be explained with reference to the drawings showing one embodiment.
第1図において、1は粉末冶金装置である1、粉末冶金
装置1は真空チレンバ2を備えている。真空チャンバ2
は気密IM造で、内部に基板3を収納し、かつ真空排気
系4によつC01気される構造をなしている。粉末冶金
装置1はまた、レーザビーム照射装置5と粉末材料供給
装置6とを備えている。In FIG. 1, 1 is a powder metallurgy apparatus 1, and the powder metallurgy apparatus 1 is equipped with a vacuum chamber 2. vacuum chamber 2
is an airtight IM structure, and has a structure in which the substrate 3 is housed inside and is exposed to CO1 by a vacuum exhaust system 4. The powder metallurgy apparatus 1 also includes a laser beam irradiation device 5 and a powder material supply device 6.
レーザビーム照射装置5はレーザ光源7で発振したシー
1アビーム12を光ファイバー8及び光学系11を通し
て真空チャンバ2内に照射し得る。The laser beam irradiation device 5 can irradiate the SIA beam 12 oscillated by the laser light source 7 into the vacuum chamber 2 through the optical fiber 8 and the optical system 11.
レーザビーム12の外側は粉末金属供給ノズル15が同
軸状に設!:Jられて真空チャンバ2内に下向きに突出
している。粉末金属供給ノズル15は内筒16及び外筒
17とからなり、内筒16及び外筒17の間の環状間隙
が金属材料粉末18の供給路21を構成する。供給路2
1は供給バイブ22を介してホッパ23に連結する。真
空チャンバ2内には反応ガス供給装置24によって反応
ガスが供給されるが、この反応ガスはボンベ25からノ
ズル26を通して真空チ1?ンバ2内に供給される他に
、供給路21にも供給されて、金属材料粉末18に対す
るるキャリアガスとしても機能する。A powder metal supply nozzle 15 is coaxially installed outside the laser beam 12! :J and protrudes downward into the vacuum chamber 2. The powder metal supply nozzle 15 consists of an inner cylinder 16 and an outer cylinder 17, and the annular gap between the inner cylinder 16 and the outer cylinder 17 constitutes a supply path 21 for the metal material powder 18. Supply route 2
1 is connected to a hopper 23 via a supply vibrator 22. A reaction gas is supplied into the vacuum chamber 2 by a reaction gas supply device 24, and this reaction gas is passed from a cylinder 25 through a nozzle 26 to the vacuum chamber 1? In addition to being supplied into the chamber 2 , it is also supplied to the supply path 21 and functions as a carrier gas for the metal material powder 18 .
基板3には高圧電源27により負の直流高電圧を印加し
、粉末供給ノズル15と基板3との間にグロー放電を起
させ、真空チャンバ2内の反応ガスを活性化させる。A negative DC high voltage is applied to the substrate 3 by the high voltage power supply 27 to cause a glow discharge between the powder supply nozzle 15 and the substrate 3, thereby activating the reaction gas in the vacuum chamber 2.
[作用]
このように構成された粉末冶金装置において、粉末冶金
をする場合には、真空チャンバ2内に反応ガス供給装置
24から窒素ガス等の反応ガスを供給し、かつ、基板3
に負の直流高電圧を作用させて反応ガスを活性化させる
。[Function] In the powder metallurgy apparatus configured as described above, when performing powder metallurgy, a reaction gas such as nitrogen gas is supplied from the reaction gas supply device 24 into the vacuum chamber 2, and the substrate 3 is
A negative DC high voltage is applied to the reactant gas to activate the reaction gas.
それと同時に、レーザビーム照装置5によって真空チ1
1ンバ2内にレーザビーム12を照射しておく。この状
態において、供給路21から金属材料粉末18を落手さ
せてレーザビーム27中に供給すると、金属材料粉末1
8は溶解し、かつ反応ガスと反応して金属化合物28を
生成する。こうして生成した金属化合物28は基板3近
傍の電位勾配に引かれて基板3上に堆積する。At the same time, the vacuum chamber 1 is
A laser beam 12 is irradiated into the chamber 2. In this state, when the metal material powder 18 is dropped from the supply path 21 and supplied into the laser beam 27, the metal material powder 18 is
8 is dissolved and reacts with the reactive gas to form a metal compound 28. The metal compound 28 thus generated is attracted by the potential gradient near the substrate 3 and deposits on the substrate 3.
[実施例]
金属材料粉末 チタン(粒径1μm)供給速度
0.1cc/sec反応ガス 窒素
基板に印加する直流電圧 1〜2KVレーザ:炭酸ガ
スレーザ
レーザ発振器出力 5KW
以上の条件により
成長速麿1/数μm/m i nの窒化チタンのJft
積を17だ。[Example] Metal material powder titanium (particle size 1 μm) supply rate
0.1 cc/sec Reaction gas Direct current voltage applied to nitrogen substrate 1 to 2 KV Laser: Carbon dioxide laser Laser oscillator output 5 KW Under the above conditions, the Jft of titanium nitride with a growth rate of 1/several μm/min
The product is 17.
(ハ)発明の効果
このように構成された金属化合物の粉末冶金装置におい
ては、材料金属を蒸気としてではなく、粉末流として供
給するので、金属化合物の生成が極めて高速である。し
かもバインダーを使用しないので、極めて高純度の金属
化合物を得ることができる。(c) Effects of the Invention In the apparatus for powder metallurgy of metal compounds constructed in this way, the material metal is supplied not as vapor but as a powder stream, so that the production of metal compounds is extremely rapid. Moreover, since no binder is used, a metal compound of extremely high purity can be obtained.
第1図はこの発明の一実施例に係わる金属化合物の粉末
冶金装置の構成を示す説明図、及び第2図はイオンブレ
ーティング装置を示す構成説明図である。
1・・・粉末冶金装置 2・・・真空チャンバ 3
・・・基板 4・・・真空排気系 5・・・レーザ
ビーム照射装置 6・・・粉末材料供給装置 7・
・・レーザ光gi 8・・・光ファイバー 11・
・・光学系12・・・レーザビーム 13・・・レン
ズ 14・・・レンズ 15・・・粉末供給ノズル
16・・・内筒17・・・外筒 18・・・金属
材料粉末 21・・・供給路 22・・・供給パイ
プ 23・・・ホッパ24・・・反応ガス供給装置
25・・・ボンベ26・・・ノズル 102・・・
真空チャンバ103・・・金属材料 104・・・電
極 105・・・基板 106・・・管FIG. 1 is an explanatory diagram showing the configuration of a powder metallurgy apparatus for metal compounds according to an embodiment of the present invention, and FIG. 2 is an explanatory diagram showing the configuration of an ion blating apparatus. 1... Powder metallurgy equipment 2... Vacuum chamber 3
... Substrate 4 ... Vacuum exhaust system 5 ... Laser beam irradiation device 6 ... Powder material supply device 7.
...Laser beam gi 8...Optical fiber 11.
...Optical system 12...Laser beam 13...Lens 14...Lens 15...Powder supply nozzle 16...Inner tube 17...Outer tube 18...Metal material powder 21... Supply path 22... Supply pipe 23... Hopper 24... Reaction gas supply device
25...Cylinder 26...Nozzle 102...
Vacuum chamber 103... Metal material 104... Electrode 105... Substrate 106... Tube
Claims (1)
と前記真空チャンバ内に雰囲気ガスと金属若しくは金属
化合物からなる材料粉末とを供給する供給装置と、前記
真空チャンバ内にレーザビームを照射し得るレーザビー
ム照射装置とを備え、かつ、前記真空チャンバ内に放電
を発生させるに足る負の電圧を前記基板に印加するよう
に構成したことを特徴とする金属化合物の粉末冶金装置a vacuum chamber, a substrate disposed in the vacuum chamber, a supply device for supplying an atmospheric gas and a material powder made of a metal or a metal compound into the vacuum chamber, and capable of irradiating a laser beam into the vacuum chamber. A powder metallurgy device for metal compounds, comprising a laser beam irradiation device, and configured to apply a negative voltage sufficient to generate an electric discharge in the vacuum chamber to the substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60190399A JPS6250098A (en) | 1985-08-29 | 1985-08-29 | Power metallurgical device for metallic compound |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60190399A JPS6250098A (en) | 1985-08-29 | 1985-08-29 | Power metallurgical device for metallic compound |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6250098A true JPS6250098A (en) | 1987-03-04 |
JPH0257476B2 JPH0257476B2 (en) | 1990-12-05 |
Family
ID=16257503
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60190399A Granted JPS6250098A (en) | 1985-08-29 | 1985-08-29 | Power metallurgical device for metallic compound |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6250098A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04179453A (en) * | 1990-11-14 | 1992-06-26 | Kikkoman Corp | Batter for fried food |
JP2007054866A (en) * | 2005-08-25 | 2007-03-08 | Shibuya Kogyo Co Ltd | Hybrid laser beam machining apparatus |
JP2015134368A (en) * | 2014-01-17 | 2015-07-27 | トヨタ自動車株式会社 | Quality control method in laser clad processing, and laser clad processing apparatus |
JP2016030285A (en) * | 2014-07-30 | 2016-03-07 | 川崎重工業株式会社 | Laser metal deposition device |
US20170173733A1 (en) * | 2015-12-18 | 2017-06-22 | Quinlan Yee Shuck | Vessel for joining materials |
JP6563622B1 (en) * | 2018-09-06 | 2019-08-21 | ヤマザキマザック株式会社 | Tool storage device, machine tool and combined processing machine |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59191587A (en) * | 1983-04-13 | 1984-10-30 | Inoue Japax Res Inc | Laser working device |
-
1985
- 1985-08-29 JP JP60190399A patent/JPS6250098A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59191587A (en) * | 1983-04-13 | 1984-10-30 | Inoue Japax Res Inc | Laser working device |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04179453A (en) * | 1990-11-14 | 1992-06-26 | Kikkoman Corp | Batter for fried food |
JP2007054866A (en) * | 2005-08-25 | 2007-03-08 | Shibuya Kogyo Co Ltd | Hybrid laser beam machining apparatus |
JP2015134368A (en) * | 2014-01-17 | 2015-07-27 | トヨタ自動車株式会社 | Quality control method in laser clad processing, and laser clad processing apparatus |
JP2016030285A (en) * | 2014-07-30 | 2016-03-07 | 川崎重工業株式会社 | Laser metal deposition device |
US20170173733A1 (en) * | 2015-12-18 | 2017-06-22 | Quinlan Yee Shuck | Vessel for joining materials |
US10639742B2 (en) * | 2015-12-18 | 2020-05-05 | Rolls-Royce Corporation | Vessel for joining materials |
JP6563622B1 (en) * | 2018-09-06 | 2019-08-21 | ヤマザキマザック株式会社 | Tool storage device, machine tool and combined processing machine |
WO2020049701A1 (en) * | 2018-09-06 | 2020-03-12 | ヤマザキマザック株式会社 | Tool storing device, machining tool, and complex machining tool |
US11919107B2 (en) | 2018-09-06 | 2024-03-05 | Yamazaki Mazak Corporation | Tool storage, machine tool, hybrid working machine |
Also Published As
Publication number | Publication date |
---|---|
JPH0257476B2 (en) | 1990-12-05 |
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Legal Events
Date | Code | Title | Description |
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EXPY | Cancellation because of completion of term |