JPS6249353B2 - - Google Patents
Info
- Publication number
- JPS6249353B2 JPS6249353B2 JP56160581A JP16058181A JPS6249353B2 JP S6249353 B2 JPS6249353 B2 JP S6249353B2 JP 56160581 A JP56160581 A JP 56160581A JP 16058181 A JP16058181 A JP 16058181A JP S6249353 B2 JPS6249353 B2 JP S6249353B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- etching
- light
- amount
- metal thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56160581A JPS5861277A (ja) | 1981-10-07 | 1981-10-07 | 金属薄膜の化学エツチング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56160581A JPS5861277A (ja) | 1981-10-07 | 1981-10-07 | 金属薄膜の化学エツチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5861277A JPS5861277A (ja) | 1983-04-12 |
| JPS6249353B2 true JPS6249353B2 (ref) | 1987-10-19 |
Family
ID=15718052
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56160581A Granted JPS5861277A (ja) | 1981-10-07 | 1981-10-07 | 金属薄膜の化学エツチング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5861277A (ref) |
-
1981
- 1981-10-07 JP JP56160581A patent/JPS5861277A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5861277A (ja) | 1983-04-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4851311A (en) | Process for determining photoresist develop time by optical transmission | |
| KR100277110B1 (ko) | 노광장치 | |
| EP0217463B1 (en) | Method of determining an exposure dose of a photosensitive lacquer layer | |
| EP0134453B1 (en) | Method for exposure dose calculation of photolithography projection printers | |
| JPS6249353B2 (ref) | ||
| TW550660B (en) | Lithography method for forming semiconductor devices on a wafer and apparatus | |
| JPS60177623A (ja) | 露光装置 | |
| JP2538935B2 (ja) | レジスト現像方法 | |
| JP2544665B2 (ja) | ウエハ周辺露光方法 | |
| JP3017762B2 (ja) | レジスト塗布方法およびその装置 | |
| JPS56146138A (en) | Method and apparatus for exposing photomask | |
| JPS59141230A (ja) | パタ−ン形成方法 | |
| JP3056598B2 (ja) | 露光装置とアライメント精度測定方法 | |
| JP2544666B2 (ja) | ウエハ周辺露光方法 | |
| JP2544161B2 (ja) | 現像方法 | |
| JP2624335B2 (ja) | レジスト露光方法 | |
| JPH10112425A (ja) | 基板処理工程モニター装置、及びこれを用いたデバイス製造方法 | |
| KR100688784B1 (ko) | 스텝퍼의 도스 캘리브레이션 방법 | |
| JP2007110055A (ja) | ホトリソグラフィ・システムの光インテグレータをモニタする方法 | |
| JPH0410408A (ja) | フォトレジスト露光方法 | |
| JPS63260019A (ja) | レジストパタ−ン形成方法 | |
| KR100197519B1 (ko) | 감광막 현상율 측정방법 | |
| KR890002571B1 (ko) | 감광막의 선폭 측정방법 | |
| KR20090001076A (ko) | 오버레이 버니어 형성 방법 및 오버레이 측정 방법 | |
| KR100607780B1 (ko) | 비쥬얼 인스펙션이 가능한 얼라인먼트 측정 시스템 |