JPS6248034A - Lead bonding device - Google Patents
Lead bonding deviceInfo
- Publication number
- JPS6248034A JPS6248034A JP60188914A JP18891485A JPS6248034A JP S6248034 A JPS6248034 A JP S6248034A JP 60188914 A JP60188914 A JP 60188914A JP 18891485 A JP18891485 A JP 18891485A JP S6248034 A JPS6248034 A JP S6248034A
- Authority
- JP
- Japan
- Prior art keywords
- lead
- light source
- infrared
- light
- recognition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体回路の内部リードでのボンディング工
程で、この内部リードの位置認識を行う手段に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a means for recognizing the position of an internal lead of a semiconductor circuit during a bonding process for the internal lead.
ここで、内部リードとはチップのビンと内部端子とを電
気的に接続する電路部をいう。また、遠赤外領域の赤外
線とは波長２０μｍ以上を呈する赤外線をいう。Here, the internal lead refers to an electrical circuit portion that electrically connects a chip bottle and an internal terminal. Further, infrared rays in the far-infrared region refer to infrared rays exhibiting a wavelength of 20 μm or more.
本発明は、基板上の半導体回路を外部端子に接続するリ
ード部のボンディングを行うリード・ボンディング装置
において、
リード部の位置認識を赤外線を用いてのパターン認識で
実行することにより、
可視領域の光線では識別できない反射率を有する材料で
もリード部を正確に識別することができるようにしたも
のである。The present invention is a lead bonding device that performs bonding of lead parts that connect semiconductor circuits on a substrate to external terminals, and the present invention recognizes the position of the lead parts by pattern recognition using infrared rays. This makes it possible to accurately identify lead portions even with materials that have reflectance that cannot be identified.
半導体素子の高集積化に伴い、半導体装置の外部リード
数は１００ビン以上の多ピン化が要求されている。この
ような多ピン半導体装置では、半導体素子と電気的接続
を取る金属細線の半導体装置内部リードの幅および間隔
ともに１００μＩＩＩ程度もしくはそれ以下でなければ
半導体素子の周囲のセラミック基板上に配置することが
できない場合が多い。また、セラミック基板上にメタラ
イズおよびメッキによって形成される内部リードはセラ
ミック基板焼成時の収縮により、またセラミック基板上
に低融点ガラスを介して固定される金属リードフレーム
の内部リードは金属リードフレーム固定時の条件により
、その位置が各半導体装置毎に設計位置から変位する場
合が多く認められる。このように幅および間隔ともに狭
く、半導体装置毎に位置の異なる内部リードと半導体素
子とを正確に電気的に接続するには、半導体装置毎に内
部リードの位置を認識する必要がある。As semiconductor devices become more highly integrated, semiconductor devices are required to have more pins than 100 external leads. In such a multi-pin semiconductor device, if the width and spacing of the internal leads of the semiconductor device, which are thin metal wires that make electrical connections with the semiconductor device, are approximately 100 μIII or less, they cannot be placed on the ceramic substrate around the semiconductor device. In many cases, this is not possible. In addition, the internal leads formed on the ceramic substrate by metallization and plating are caused by shrinkage during firing of the ceramic substrate, and the internal leads of the metal lead frame fixed on the ceramic substrate through low melting point glass are formed when the metal lead frame is fixed. Due to these conditions, the position is often displaced from the designed position for each semiconductor device. In order to accurately electrically connect the internal leads and the semiconductor element, which have narrow widths and intervals and whose positions vary from semiconductor device to semiconductor device, it is necessary to recognize the position of the internal leads for each semiconductor device.
内部リードの位置は、ＴＶカメラなどを用いて得られる
画像パターンで認識する方法が従来から多用されている
。Conventionally, a method of recognizing the position of the internal lead using an image pattern obtained using a TV camera or the like has been frequently used.
さて、従来のリード認識手段では、可視光を利用して画
像を生成している。したがって黒色セラミック上にメタ
ライズおよびメッキによって形成されるリートを認識す
る際には、内部リードと黒色セラミック部との可視光に
対する反射率の顕著な差で、内部リードと黒色セラミッ
ク部を認識することができるが、白色セラミック上にメ
タライズおよびメッキにより形成される内部リードおよ
び低融点ガラス上に固定される金属リードフレームの場
合には、白色セラミック部と内部リード部およ・び低融
点ガラス部と金属リードフレーム部の可視光に対する反
射率の差が少ないので、内部リートの位置認識が困難に
なる欠点があった。Now, conventional lead recognition means generate images using visible light. Therefore, when recognizing a REET formed by metallization and plating on black ceramic, it is possible to recognize the internal lead and the black ceramic part based on the significant difference in reflectance to visible light between the internal lead and the black ceramic part. However, in the case of internal leads formed by metallization and plating on white ceramic and metal lead frames fixed on low-melting glass, the white ceramic part and the internal lead part, and the low-melting glass part and the metal Since there is little difference in the reflectance of the lead frame to visible light, there is a drawback that it is difficult to recognize the position of the internal lead.
本発明は、前述の欠点を除去するもので、可視光では困
難である内部リードの位置識別が実行できる手段を備え
たリード・ボンディング装置を提供することを目的とす
る。SUMMARY OF THE INVENTION The present invention eliminates the above-mentioned drawbacks and aims to provide a lead bonding apparatus equipped with a means for identifying the position of internal leads, which is difficult to do using visible light.
Ｃｕｙ題点を解決するための手段〕
本発明は、半導体回路が装着された基板上に固定され、
この半導体回路と外部端子とを接続するリード部に投射
する光源手段（５）と、この投射されたリード部のパタ
ーンに対応する反射を認識する認識手段（４）とを備え
たリード・ボンディング装置において、上記光源手段は
、赤外線を放射する光源であることを特徴とする。Means for Solving the Cuy Problem] The present invention provides a semiconductor circuit that is fixed on a substrate on which a semiconductor circuit is mounted,
A lead bonding device comprising a light source means (5) for projecting light onto a lead portion connecting this semiconductor circuit and an external terminal, and a recognition means (4) for recognizing reflection corresponding to the pattern of the projected lead portion. In this, the light source means is a light source that emits infrared rays.
光源手段から投射される赤外線が遠赤外領域の赤外線で
あってもよい。The infrared rays projected from the light source means may be in the far infrared region.
、〔作用〕
例えば、白色セラミック上にメタライズおよびメッキで
形成したリード部、または低融点ガラス上に固定された
リード部では、リード部と固定部との可視光線に対する
反射率の相異は顕著でない。, [Function] For example, in a lead part formed by metallization and plating on white ceramic, or a lead part fixed on low melting point glass, there is no noticeable difference in reflectance for visible light between the lead part and the fixed part. .
一方、赤外線に対して、リード部の反射率は可視光線の
場合とほぼ同程度の値を保つのに対して、セラミックお
よび低融点ガラスの反射率は著しく低下する。本発明は
、この特性を利用して可視光では識別不能のパターンを
識別可能にす′るものである。On the other hand, for infrared rays, the reflectance of the lead portion maintains approximately the same value as for visible rays, whereas the reflectance of ceramics and low-melting glass significantly decreases. The present invention makes use of this characteristic to make it possible to identify patterns that cannot be identified with visible light.
以下、本発明実施例装置を図面に基づいて説明する。 DESCRIPTION OF THE PREFERRED EMBODIMENTS A device according to an embodiment of the present invention will be explained below based on the drawings.
第１図および第２図は本発明実施例装置の構成を示す模
式図である。FIGS. 1 and 2 are schematic diagrams showing the configuration of an apparatus according to an embodiment of the present invention.
この実施例装置では、セラミック（黒色または白色）基
板上３のメタライズおよびメッキからなる内部リード１
（第１図参照）もくしは、セラミック基板上に低融点
ガラス２を介して固定される金属リードフレーム１′
（第２図参照）の位置認識を行う際に、光源として赤外
線光源５が用いられている。白色セラミックもしくは低
融点ガラスとメタライズおよびメッキもしくは金属リー
ドフレームからなる内部リードとは可視光に対する反射
率が近似しているので、可視光を用いる従来例手段では
十分なコントラストを得ることができず、したがって、
内部リードの位置を認識できない場合が多い。しかし、
赤外もしくは遠赤外光に対してセラミックもしくは低融
点ガラスは吸収が増大し可視光と比較すると反射率が著
しく低下するが、メタライズおよびメッキもしくは金属
リードフレームからなる内部リート部は反射率が可視光
とほぼ同程度のままであるので、リード認識に光源とし
て赤外および遠赤外光源を用いれば、十分なコントラス
トを得ることができて、リート位置認識が可能になる。In this example device, an internal lead 1 consisting of metallization and plating 3 on a ceramic (black or white) substrate is used.
(See Figure 1) A metal lead frame 1' is fixed on a ceramic substrate via a low-melting glass 2.
When performing position recognition (see FIG. 2), an infrared light source 5 is used as a light source. Since the internal leads made of white ceramic or low melting point glass and metallized and plated or metal lead frames have similar reflectance to visible light, it is not possible to obtain sufficient contrast using conventional means using visible light. therefore,
In many cases, the position of the internal lead cannot be recognized. but,
Ceramic or low-melting glass absorbs infrared or far-infrared light, and its reflectance decreases significantly when compared to visible light, but internal reed parts made of metallization and plating or metal lead frames have visible reflectance. Since the light remains at approximately the same level as light, if infrared and far-infrared light sources are used as light sources for lead recognition, sufficient contrast can be obtained and the lead position recognition becomes possible.
この実施例装置では、赤外線光源５としてネルンスト燈
およびグローバ燈などが用いられ、また画像認識装置４
には、電荷結合素子（ＣＣＤ）もしくはアレー状に配列
したサーモカップルなどが用いられる。In this embodiment, a Nernst lamp, a globe lamp, etc. are used as the infrared light source 5, and the image recognition device 4
For this purpose, a charge coupled device (CCD) or a thermocouple arranged in an array is used.
本発明は以上説、明したように、赤外もしくは遠赤外光
が用いられているので、可視光では認識が困難であった
白色セラミック上の内部リードおよびセラミック基板上
に低融点ガラスを介して固定される金属リードフレーム
からなる内部リードも、十分なコントラストで位置認識
が行える効果がある。As explained and clarified above, the present invention uses infrared or far-infrared light, so it is possible to connect internal leads on white ceramic and ceramic substrate through low-melting glass, which were difficult to recognize with visible light. The internal lead made of a metal lead frame that is fixed in place also has the effect of allowing position recognition with sufficient contrast.
第１図および第２図は本発明実施例装置の構成を示す模
式図。
■・・・内部リート、１′・・・金属リードフレーム、
２・・・低融点ガラス、３・・・セラミック基板、４・
・・画像認識装置、５・・・赤外線光源。
特許出廓人 日本電気株式会社FIG. 1 and FIG. 2 are schematic diagrams showing the configuration of an apparatus according to an embodiment of the present invention. ■...Internal lead, 1'...Metal lead frame,
2...Low melting point glass, 3...Ceramic substrate, 4...
...Image recognition device, 5...Infrared light source. Patent distributor NEC Corporation
Claims (2)
半導体回路と外部端子とを接続するリード部に投射する
光源手段（５）と、 この投射されたリード部のパターンに対応する反射を認
識する認識手段（４）と を備えたリード・ボンディング装置において、上記光源
手段は、赤外線を放射する光源であることを特徴とする
リード・ボンディング装置。(1) A light source means (5) that is fixed on a board on which a semiconductor circuit is mounted and projects light onto a lead part that connects this semiconductor circuit to an external terminal; A lead bonding apparatus comprising a recognition means (4) for recognizing, wherein the light source means is a light source that emits infrared rays.
外線である特許請求の範囲第（１）項に記載のリード・
ボンディング装置。(2) The lead according to claim (1), wherein the infrared rays projected from the light source means are infrared rays in the far infrared region.
bonding equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60188914A JPS6248034A (en) | 1985-08-28 | 1985-08-28 | Lead bonding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60188914A JPS6248034A (en) | 1985-08-28 | 1985-08-28 | Lead bonding device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6248034A true JPS6248034A (en) | 1987-03-02 |
Family
ID=16232095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60188914A Pending JPS6248034A (en) | 1985-08-28 | 1985-08-28 | Lead bonding device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6248034A (en) |
-
1985
- 1985-08-28 JP JP60188914A patent/JPS6248034A/en active Pending
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