JPS6245973B2 - - Google Patents

Info

Publication number
JPS6245973B2
JPS6245973B2 JP13193078A JP13193078A JPS6245973B2 JP S6245973 B2 JPS6245973 B2 JP S6245973B2 JP 13193078 A JP13193078 A JP 13193078A JP 13193078 A JP13193078 A JP 13193078A JP S6245973 B2 JPS6245973 B2 JP S6245973B2
Authority
JP
Japan
Prior art keywords
compound
photosensitive
image
layer
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP13193078A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5559457A (en
Inventor
Yonosuke Takahashi
Hiromichi Tachikawa
Fumiaki Shinozaki
Tomoaki Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP13193078A priority Critical patent/JPS5559457A/ja
Publication of JPS5559457A publication Critical patent/JPS5559457A/ja
Publication of JPS6245973B2 publication Critical patent/JPS6245973B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
JP13193078A 1978-10-25 1978-10-25 Image formation method capable of correcting exposed area Granted JPS5559457A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13193078A JPS5559457A (en) 1978-10-25 1978-10-25 Image formation method capable of correcting exposed area

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13193078A JPS5559457A (en) 1978-10-25 1978-10-25 Image formation method capable of correcting exposed area

Publications (2)

Publication Number Publication Date
JPS5559457A JPS5559457A (en) 1980-05-02
JPS6245973B2 true JPS6245973B2 (en, 2012) 1987-09-30

Family

ID=15069523

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13193078A Granted JPS5559457A (en) 1978-10-25 1978-10-25 Image formation method capable of correcting exposed area

Country Status (1)

Country Link
JP (1) JPS5559457A (en, 2012)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57114139A (en) * 1981-01-08 1982-07-15 Toray Ind Inc Photopolymerizing composition

Also Published As

Publication number Publication date
JPS5559457A (en) 1980-05-02

Similar Documents

Publication Publication Date Title
US4544627A (en) Negative image forming process in o-quinone diazide layer utilizing laser beam
US4356254A (en) Image-forming method using o-quinone diazide and basic carbonium dye
US4356255A (en) Photosensitive members and a process for forming patterns using the same
US4672021A (en) Contrast enhancement layer composition with naphthoquinone diazide, indicator dye and polymeric binder
US5272042A (en) Positive photoresist system for near-UV to visible imaging
JPH07508840A (ja) ポジ型放射線感応性混合物およびそれを使用して製造した記録材料
TW511149B (en) Photomask and method for manufacturing the same
US5139918A (en) Photoresist system and photoetching process employing an I-line peak light source
US4806453A (en) Positive acting bilayer photoresist development
US4777111A (en) Photographic element with diazo contrast enhancement layer and method of producing image in underlying photoresist layer of element
JPH01300250A (ja) フォトレジスト組成物
US5401608A (en) Negative-working radiation-sensitive mixture and radiation-sensitive recording material produced therewith
JPH024260A (ja) 放射線感応性記録材料及び画像の形成法
US4464458A (en) Process for forming resist masks utilizing O-quinone diazide and pyrene
US4997748A (en) Developer solution for positive-working resist composition
JPS6249613B2 (en, 2012)
JPS60238829A (ja) パタ−ン形成方法
JP3028816B2 (ja) フォトレジストシステムおよびフォトエッチング方法
JPS6244255B2 (en, 2012)
JPS6245973B2 (en, 2012)
TW509821B (en) Positive photoresist composition for reducing linewidth swing ratio containing a 2,4-dinitro-1-naphthol and it use for producing a photoresist image on a substrate
JPH05249681A (ja) 酸分解性化合物及びそれを含有するポジ型感放射線性レジスト組成物
JPS6131859B2 (en, 2012)
US4142892A (en) Method of reducing the defect density in a positive-working photoresist layer using a salt of imidazolinium
KR910007227B1 (ko) 포지티브-워킹 레지스트조성물용 현상액