JPS6245125A - Drier - Google Patents

Drier

Info

Publication number
JPS6245125A
JPS6245125A JP18421285A JP18421285A JPS6245125A JP S6245125 A JPS6245125 A JP S6245125A JP 18421285 A JP18421285 A JP 18421285A JP 18421285 A JP18421285 A JP 18421285A JP S6245125 A JPS6245125 A JP S6245125A
Authority
JP
Japan
Prior art keywords
wafer
dried
cassette
drying
ultraviolet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18421285A
Other languages
Japanese (ja)
Inventor
Reiji Saitou
斉藤 令嗣
Atsushi Kasai
河西 厚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Ltd
Hitachi Microcomputer Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcomputer Engineering Ltd filed Critical Hitachi Ltd
Priority to JP18421285A priority Critical patent/JPS6245125A/en
Publication of JPS6245125A publication Critical patent/JPS6245125A/en
Pending legal-status Critical Current

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  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)

Abstract

PURPOSE:To prevent the electrostatic breakdown of a material to be dried by charging by mounting an ultraviolet irradiation source irradiating the material to be dried by ultraviolet rays and removing charges charged to the material to be dried by ultraviolet exposure. CONSTITUTION:A wafer 2 on which chemicals adhere through photo-resist treatment is dipped ito a water washing tank 4 under the state in which it is housed in a cassette 3, and chemicals are removed. The cassette 3 housing the wafer 2 is transferred into a vessel 8 for a rinser drier section 6. When the vessel 8 is turned in the horizontal direction by a motor 7, moisture adhering on the wafer 2 is removed by centrifugal force. When a mercury lamp 11 is lit, the wafer 2 is irradiated by ultraviolet rays through a transparent central cylinder 10. Accordingly, charges charged on the wafer 2 can be removed from the wafer 2.

Description

【発明の詳細な説明】 〔技術分野〕 本発明は乾燥技術、特に、半導体ウェハの洗浄後にN2
ガス等で該ウェハを乾燥するために用いて効果のある技
術に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to drying technology, particularly drying technology using N2 after cleaning semiconductor wafers.
The present invention relates to techniques that can be used effectively to dry the wafer with gas or the like.

〔背景技術〕[Background technology]

この種のウェハ乾燥に用いられる装置はいわゆるリンサ
ードライヤーと呼ばれるものであり、半導体装置の製造
過程においてウェハを洗浄液で洗浄した後にウェハにN
2ガス等を供給しかつウェハを回転させることにより乾
燥を行うものである。
The equipment used for this type of wafer drying is a so-called rinser dryer, which applies nitrogen to the wafer after cleaning it with a cleaning solution during the manufacturing process of semiconductor devices.
Drying is performed by supplying two gases and rotating the wafer.

ところで、このような乾燥装置においては、乾燥時にN
2ガスとウェハ面とが接触する際にN2ガスとウェハ面
との間の摩擦によりウェハ面に極めて高い電圧の帯電現
象が発生し、この帯電によりウェハに作り込まれた集積
回路素子の静電破壊や異物の付着が起こることを本発明
者は見い出した。
By the way, in such a drying device, N is not used during drying.
When the N2 gas and the wafer surface come into contact, an extremely high voltage charging phenomenon occurs on the wafer surface due to the friction between the N2 gas and the wafer surface, and this charging causes static electricity in the integrated circuit elements fabricated on the wafer. The inventor has discovered that destruction and foreign matter adhesion occur.

このようなウェハの帯電による静電破壊や異物付着の問
題は集積回路の高集積化によりさらに重大なものとなる
と考えられる。
It is believed that such problems of electrostatic damage and foreign matter adhesion due to charging of the wafer will become even more serious as integrated circuits become more highly integrated.

なお、リンサードライヤーにおけるウェハへの帯電に起
因する問題については、株式会社工業調査会、昭和56
年11月10日発行、r’i子材料J 1981年別冊
、Plolに記載されている。
Regarding problems caused by electrification of wafers in rinser dryers, please refer to Kogyo Kenkyukai Co., Ltd., 1982.
Published on November 10, 1981, R'I Child Materials J, 1981 separate volume, Plol.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、被乾燥物の帯電による静電破壊や異物
付着等を防止できる技術を提供することにある。
An object of the present invention is to provide a technique that can prevent electrostatic damage and foreign matter adhesion caused by charging of objects to be dried.

本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

〔発明の概要〕[Summary of the invention]

本願において開示される発明のうち代表的なものの概要
を節単に説明すれば、次の通りである。
A brief summary of typical inventions disclosed in this application is as follows.

すなわち、被乾燥物に紫外線を照射する紫外線照射源を
設けたことにより、被乾燥物に帯電した電荷を紫外線照
射で除去することができるので、帯電に起因する静電破
壊や異物付着等を防止することができるものである。
In other words, by installing an ultraviolet irradiation source that irradiates ultraviolet rays onto the object to be dried, the electric charge on the object to be dried can be removed by ultraviolet irradiation, thereby preventing electrostatic damage and foreign matter adhesion caused by charging. It is something that can be done.

〔実施例〕〔Example〕

第1図は本発明の一実施例である乾燥装置の略断面図、
第2図はその略平面図である。
FIG. 1 is a schematic cross-sectional view of a drying device that is an embodiment of the present invention;
FIG. 2 is a schematic plan view thereof.

本実施例の乾燥装置は半導体装置の製造過程におけるフ
ォトレジスト処理等で洗浄された半導体ウェハをN2ガ
ス等の供給で乾燥する、いわゆるリンサーに組み込んだ
リンサードライヤーに適用されたものである。
The drying apparatus of this embodiment is applied to a so-called rinser dryer that dries semiconductor wafers that have been cleaned by photoresist processing or the like in the process of manufacturing semiconductor devices by supplying N2 gas or the like.

このリンサー1は半導体ウェハ2を多数枚収納したカセ
ット3を洗浄水により水洗するための洗浄槽4を有する
リンサ一部5と、洗浄槽4の側方に設けられたリンサー
ドライヤ一部6とを有している。
This rinser 1 includes a rinser part 5 having a cleaning tank 4 for washing a cassette 3 containing a large number of semiconductor wafers 2 with cleaning water, and a rinser dryer part 6 provided on the side of the cleaning tank 4. have.

リンサードライヤ一部6は、モータ7で水平方向に回転
する容器8を有し、この容器8内には、前記洗浄槽4内
で洗浄されたウェハ2がカセット3に多数枚収納された
状態で十文字状に合計4個所に収容される。この容器8
内には、図示しないN2ガス供給源から乾燥用のN2ガ
ス9を矢印で示す如く供給するよう構成されている。
The rinser dryer part 6 has a container 8 which is rotated in the horizontal direction by a motor 7, and in this container 8, a large number of wafers 2 cleaned in the cleaning tank 4 are stored in a cassette 3. They are housed in a total of four locations in a cross shape. This container 8
Inside, a structure is constructed such that N2 gas 9 for drying is supplied from an N2 gas supply source (not shown) as shown by an arrow.

また、容器8内の中央部には、ガラスの如き透明材料で
作られたN、ガス供給用の中央筒10が立設され、この
中央筒10内には、ウェハ2に帯電した静電気を除去す
るための紫外線照射用の水銀灯11 (紫外線照射FA
)が設けられている。さらに、容″a8の上部には、カ
セット3の出し入れのために開閉可能な蓋12が設けら
れている。
Further, in the center of the container 8, a central cylinder 10 made of a transparent material such as glass for supplying nitrogen and gas is erected. Mercury lamp 11 for ultraviolet irradiation (UV irradiation FA)
) is provided. Furthermore, a lid 12 that can be opened and closed for loading and unloading the cassette 3 is provided at the top of the container "a8".

次に、本実施例の作用について説明する。Next, the operation of this embodiment will be explained.

まず、たとえばフォトレジスト処理により薬液が付着し
たウェハ2はカセット3に多数枚収納した状態でリンサ
一部5の水洗槽4内に浸漬され、薬液を除去される。
First, a large number of wafers 2 to which a chemical solution has been attached due to, for example, photoresist processing are stored in a cassette 3 and immersed in the washing tank 4 of the rinser part 5 to remove the chemical solution.

その後、ウェハ2を収容したカセット3はリンサードラ
イヤ一部6の容器8の中に移送される。
Thereafter, the cassette 3 containing the wafers 2 is transferred into the container 8 of the rinser dryer part 6.

容器8内に所定数のカセット3が収容されると蓋12が
閉じられ、乾燥のために該容器8がモータ7で水平方向
に回転され、遠心力でウェハ2に付着した水分を除去す
ると共に、容器8内にはN2ガス9が送り込まれ、BM
 N 2ガス9をウェハ2の表面と接触させることによ
り該ウェハ2をさらに迅速に効率良く乾燥する。
When a predetermined number of cassettes 3 are housed in the container 8, the lid 12 is closed, and the container 8 is rotated horizontally by the motor 7 for drying, and the moisture attached to the wafers 2 is removed by centrifugal force. , N2 gas 9 is sent into the container 8, and the BM
By bringing the N 2 gas 9 into contact with the surface of the wafer 2, the wafer 2 is dried more quickly and efficiently.

ところで、N2ガス9とウェハ2の表面とが接触する際
、その摩擦により静電気が発生し、乾燥が進むにつれて
ウェハ2には極めて強大な電荷の帯電が起こる。そこで
、本実施例では、容器8の中央筒10内に設けた水銀灯
11を点灯させることにより、透明な中央筒10の壁面
を通してカセット3内のウェハ2に紫外線が照射される
。それにより、ウェハ2に帯電した電荷は紫外線の照射
で該ウェハ2から除去することができる。
By the way, when the N2 gas 9 and the surface of the wafer 2 come into contact, static electricity is generated due to the friction, and as the drying progresses, the wafer 2 is charged with an extremely strong charge. Therefore, in this embodiment, by lighting the mercury lamp 11 provided in the central tube 10 of the container 8, the wafers 2 in the cassette 3 are irradiated with ultraviolet light through the wall surface of the transparent central tube 10. Thereby, the electric charges charged on the wafer 2 can be removed from the wafer 2 by irradiation with ultraviolet rays.

したがって、本実施例においては、ウェハ2に強大な電
荷が蓄積されることがなくなるので、ウェハ2に帯電し
た静電気で該ウェハ2に作り込まれた高密度集積回路が
ゲート破壊を起こすことを防止できる上に、帯電により
ウェハ2に塵芥が付着し易くなることも未然に防止でき
るものである。
Therefore, in this embodiment, a large electric charge is not accumulated on the wafer 2, so that gate destruction of the high-density integrated circuits fabricated on the wafer 2 due to static electricity charged on the wafer 2 is prevented. In addition, it is possible to prevent dust from easily adhering to the wafer 2 due to charging.

〔効果〕〔effect〕

(1)、被乾燥物に紫外線を照射する紫外線照射源を設
けたことにより、被乾燥物に帯電する電荷を紫外線照射
で除去できるので、帯電による被乾燥物の静電破壊を防
止することができる。
(1) By installing an ultraviolet irradiation source that irradiates ultraviolet rays onto the object to be dried, the electric charge on the object to be dried can be removed by irradiation with ultraviolet rays, thereby preventing electrostatic damage to the object to be dried due to charging. can.

(2)、前記(1)により、帯電した静電気による被乾
燥物への異物の付着を防止することができる。
(2) According to (1) above, it is possible to prevent foreign matter from adhering to the object to be dried due to charged static electricity.

(3)、紫外線照射を半導体ウェハのリンサードライヤ
ーに適用することにより、高密度の微細加工を施した集
積回路の静電破壊や異物付着を防止できるので、極めて
有用である。
(3) Applying ultraviolet irradiation to a rinser dryer for semiconductor wafers is extremely useful because it can prevent electrostatic damage and foreign matter adhesion to integrated circuits that have been subjected to high-density microfabrication.

以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない。
Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.

たとえば、乾燥装置の構造は他の構造であってもよい。For example, the structure of the drying device may be other structures.

また、紫外線照射源として水銀灯以外のものを使用する
こともできる。
Moreover, sources other than mercury lamps can also be used as the ultraviolet irradiation source.

〔利用分野〕[Application field]

以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野であるウェハのリンサード
ライヤーに適用した場合について説明したが、それに限
定されるものではなく、たとえば、静電破壊や帯電によ
る異物付着を起こし易いものには広く適用できるもので
ある。
In the above explanation, the invention made by the present inventor was mainly applied to a wafer rinser dryer, which is the background field of application, but the invention is not limited to this. It can be widely applied to objects that are susceptible to foreign matter adhesion due to

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例である乾燥装置の略断面図、 第2図はその略平面図である。 l・・・リンサー、2・・・半導体ウェハ、3・ ・カ
セット、4・・・洗浄槽、5・・・リンサ一部、6 ・
・リンサードライヤ一部、7・・・モータ、8・・・容
器、9・・・N2ガス、10 ・・中央筒、11・・・
水銀灯、12・・・蓋。 代理人 弁理±  711,11.虜パ)、(,7
FIG. 1 is a schematic sectional view of a drying device according to an embodiment of the present invention, and FIG. 2 is a schematic plan view thereof. l... Rinser, 2... Semiconductor wafer, 3... Cassette, 4... Cleaning tank, 5... Part of rinser, 6...
・Part of rinser dryer, 7...Motor, 8...Container, 9...N2 gas, 10...Central tube, 11...
Mercury lamp, 12...lid. Agent Attorney ± 711, 11. Prisoner Pa), (,7

Claims (1)

【特許請求の範囲】 1、乾燥流体を被乾燥物に供給することにより被乾燥物
の乾燥を行う装置であって、被乾燥物に紫外線を照射す
る紫外線照射源を設けてなることを特徴とする乾燥装置
。 2、被乾燥物が回転されることを特徴とする特許請求の
範囲第1項記載の乾燥装置。 3、被乾燥物がウェハであることを特徴とする特許請求
の範囲第1項または第2項記載の乾燥装置。
[Scope of Claims] 1. An apparatus for drying an object to be dried by supplying a drying fluid to the object, characterized by being provided with an ultraviolet irradiation source that irradiates the object to be dried with ultraviolet rays. drying equipment. 2. The drying apparatus according to claim 1, wherein the drying object is rotated. 3. The drying apparatus according to claim 1 or 2, wherein the object to be dried is a wafer.
JP18421285A 1985-08-23 1985-08-23 Drier Pending JPS6245125A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18421285A JPS6245125A (en) 1985-08-23 1985-08-23 Drier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18421285A JPS6245125A (en) 1985-08-23 1985-08-23 Drier

Publications (1)

Publication Number Publication Date
JPS6245125A true JPS6245125A (en) 1987-02-27

Family

ID=16149325

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18421285A Pending JPS6245125A (en) 1985-08-23 1985-08-23 Drier

Country Status (1)

Country Link
JP (1) JPS6245125A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0546178A4 (en) * 1990-08-31 1994-02-23 Takasago Netsugaku Kogyo Kabushiki Kaisha
JPH07165323A (en) * 1994-10-24 1995-06-27 Tenchi Kikai Kk Dividing method and device for practicing it
KR20030002070A (en) * 2001-06-30 2003-01-08 삼성전자 주식회사 Anti-stiction drying method of wafer using centrifugal force and apparatus thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0546178A4 (en) * 1990-08-31 1994-02-23 Takasago Netsugaku Kogyo Kabushiki Kaisha
JPH07165323A (en) * 1994-10-24 1995-06-27 Tenchi Kikai Kk Dividing method and device for practicing it
KR20030002070A (en) * 2001-06-30 2003-01-08 삼성전자 주식회사 Anti-stiction drying method of wafer using centrifugal force and apparatus thereof

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