JPS6244865B2 - - Google Patents
Info
- Publication number
- JPS6244865B2 JPS6244865B2 JP56150335A JP15033581A JPS6244865B2 JP S6244865 B2 JPS6244865 B2 JP S6244865B2 JP 56150335 A JP56150335 A JP 56150335A JP 15033581 A JP15033581 A JP 15033581A JP S6244865 B2 JPS6244865 B2 JP S6244865B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light
- groove
- psg
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000005360 phosphosilicate glass Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 description 11
- 239000010408 film Substances 0.000 description 9
- 239000002184 metal Substances 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 102100021983 Pregnancy-specific beta-1-glycoprotein 9 Human genes 0.000 description 2
- 108010000627 pregnancy-specific beta-1-glycoprotein 7 Proteins 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Description
【発明の詳細な説明】
本発明は量子効率を向上させるために、リンケ
イ酸ガラス（PSG）を溶融（フロー）することに
よつて形成した反射鏡を有する受光素子の製造方
法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a light receiving element having a reflecting mirror formed by melting (flowing) phosphosilicate glass (PSG) in order to improve quantum efficiency.
従来の光センサーでは、第１図ａに示すように
ｎ層１の上に形成した高比抵抗ｎ(i)層２とさらに
この上に形成したＰ層３との間に形成されるＰ−
ｎ接合面に垂直方向に入射する光をそのままＰ−
ｎ接合面に入射させるので、入射光のかなりの量
がｎ層またはＰ層に入いりそこで吸収されてい
た。このように吸収されたエネルギーは情報に寄
与しないので光センサーの効率は低かつた。な
お、図中４はAl電極である。ところで、これを
改善するために、第１図ｂに示すような入射光用
窓の下に斜めに光反射鏡５を設けた装置におい
て、この光反射鏡によつて入射光をＰ−ｎ層にそ
れと平行な方向から光を入射せしめ、Ｐ−ｎ接合
面すなわち図中のｎ(i)層２を光導波ガイドとして
利用することによつて量子効率の向上が可能であ
ることがたとえば特公昭56−48182号にて報告さ
れている。しかし、第１図ｂのような装置を製造
するにあたつて、Ｐ−ｎ層に効率良く光を照射さ
せる反射鏡を設けることは製造技術的に非常に困
難であつた。 In a conventional optical sensor, as shown in FIG.
The light incident perpendicularly to the n-junction surface is directly converted to P-
Since the light is incident on the n-junction surface, a considerable amount of the incident light enters the n-layer or the p-layer and is absorbed there. The efficiency of the optical sensor was low because the energy thus absorbed did not contribute to information. Note that 4 in the figure is an Al electrode. By the way, in order to improve this, in a device in which a light reflecting mirror 5 is provided obliquely under the incident light window as shown in FIG. For example, it has been shown in Japanese Patent Publication No. 2006-11111 that quantum efficiency can be improved by making light incident from a direction parallel to the P-n junction surface, that is, the n(i) layer 2 in the figure, as an optical waveguide. Reported in No. 56-48182. However, in manufacturing the device shown in FIG. 1B, it is extremely difficult from a manufacturing technology perspective to provide a reflecting mirror that efficiently irradiates light onto the P-n layer.
本発明はこの様な問題を解決するために、フロ
ーしたPSGのわん曲面にAl等の金属膜を蒸着し
て、この金属膜を反射鏡としてｎ(i)層に効率よく
光を収束させ、量子効率を高めようとするもので
ある。 In order to solve such problems, the present invention deposits a metal film such as Al on the curved surface of the flowed PSG, and uses this metal film as a reflecting mirror to efficiently converge light onto the n(i) layer. This is an attempt to increase quantum efficiency.
以下、本発明にかかる薄膜状ｐ−ｉ−ｎ接合型
光センサー製造方法の一実施例について説明す
る。 Hereinafter, an embodiment of the method for manufacturing a thin film pin junction type optical sensor according to the present invention will be described.
まず、ｎ型シリコン基板１の上に厚さ５μｍの
ｎ型高抵抗エピタキシヤル層を成長させ、これに
ボロンのイオン打ち込みを行なうことによつてｎ
(i)層２およびＰ層３を形成する〔第２図ａ〕。次
に、幅５μｍ、深さ６μｍの溝６をホトレジスト
をマスクにしてドライエツチングによつて形成す
る〔第２図ｂ〕。なお、この溝６はPn接合を越え
る深さで環状もしくは一部が分断された略環状で
あればよい。この工程にて中央部に台形状の光電
変換素子が形成される。これに続いて、後の熱処
理工程の際に、後程被着するPSGからの素子への
リン拡散を防止するために、酸素ガス中1000℃の
熱処理を施し、Ｐ層３、ｎ(i)層２及びｎ層１表面
に酸化ケイ素（SiO2）（図示せず）を成長させ
る。たとえばＰ層３上に成長した酸化膜膜厚は
500Åである。 First, an n-type high-resistance epitaxial layer with a thickness of 5 μm is grown on an n-type silicon substrate 1, and boron ions are implanted into this layer.
(i) Form layer 2 and P layer 3 [Figure 2a]. Next, a groove 6 having a width of 5 .mu.m and a depth of 6 .mu.m is formed by dry etching using a photoresist as a mask (FIG. 2b). Note that this groove 6 may be annular or partially annular with a depth exceeding the Pn junction. In this step, a trapezoidal photoelectric conversion element is formed in the center. Following this, in order to prevent phosphorus from diffusing into the device from PSG, which will be deposited later, during the subsequent heat treatment process, heat treatment was performed at 1000°C in oxygen gas, and the P layer 3, the n(i) layer Silicon oxide (SiO 2 ) (not shown) is grown on the surfaces of the 2 and n layers 1. For example, the thickness of the oxide film grown on P layer 3 is
It is 500Å.
次に、膜厚8000Å、リン濃度８モル％のPSG７
を被着し、更に、酸素ガス中900℃で20分間熱処
理（PSGの焼きしめ）を施す〔第２図ｃ〕。この
後、フオトエツチング技術を用いて、PSG７を使
定の形状にエツチングして溝６の外側側面にPSG
を残す〔第２図ｄ〕。ひき続き、酸素ガス中1050
℃で20分間の熱処理を施し、PSG７を流動（フロ
ー）させわん曲面を形成する〔第２図ｅ〕。こう
したのち、膜厚0.7μｍの例えばAl金属を蒸着
し、ポジレジストをマスクにして所定の形状にな
るようにAlエツチングを行ない、光反射鏡８及
び電極４を形成して光センサーが完成する〔第２
図ｆ〕。尚、第３図は完成した素子の平面図であ
る。 Next, PSG7 with a film thickness of 8000 Å and a phosphorus concentration of 8 mol%
and then heat-treated in oxygen gas at 900°C for 20 minutes (to harden the PSG) [Figure 2c]. After this, using photo-etching technology, PSG 7 is etched into the desired shape and PSG is applied to the outer side of groove 6.
[Figure 2 d]. Continuing to 1050 in oxygen gas
Heat treatment is performed at ℃ for 20 minutes to cause PSG7 to flow and form a curved surface [Figure 2 e]. After this, for example, Al metal is deposited to a thickness of 0.7 μm, and Al is etched into a predetermined shape using a positive resist as a mask. The light reflecting mirror 8 and electrode 4 are formed to complete the optical sensor. Second
Figure f]. Incidentally, FIG. 3 is a plan view of the completed device.
本実施例の場合、形成されたAl反射鏡８はわ
ん曲しておりいわゆる凹面鏡となつている。ま
た、この凹面鏡の光軸がｎ(i)層内部に位置するた
め、ｎ(i)層は効率よく照射されるので光効果が大
きく、量子効率は向上する。反射鏡薄膜として本
実施例で使用したAl以外に反射率の高いAu等の
金属を使用した場合、量子効率は更に向上するこ
とはいうまでもない。尚、反射凹面鏡の光軸の位
置は反射凹面鏡の位置、方向及び凹面鏡の曲率に
関係する。すなわち、Ｐ−ｉ−ｎ素子周囲の溝の
深さ、幅及びPSG膜、Al膜の膜厚、更にPSG膜の
フロー後の表面形状すなわちPSG膜のリン濃度、
フロー条件に関係する。これらの各条件を調整す
ることによつてフローしたPSGわん曲面により収
束された光を所定の活性部に照射することが可能
である。 In the case of this embodiment, the formed Al reflecting mirror 8 is curved and is a so-called concave mirror. Furthermore, since the optical axis of this concave mirror is located inside the n(i) layer, the n(i) layer is efficiently irradiated, resulting in a large optical effect and improved quantum efficiency. Needless to say, if a metal with high reflectivity such as Au is used as the reflective mirror thin film in addition to Al used in this example, the quantum efficiency will be further improved. Note that the position of the optical axis of the reflective concave mirror is related to the position and direction of the reflective concave mirror and the curvature of the concave mirror. That is, the depth and width of the groove around the P-i-n element, the film thickness of the PSG film and the Al film, and the surface shape of the PSG film after flow, that is, the phosphorus concentration of the PSG film,
Related to flow conditions. By adjusting each of these conditions, it is possible to irradiate a predetermined active region with light converged by the flowing PSG curved surface.
以上の通り、本発明によれば、量子効率の高い
高性能光センサーを得ることができる。尚、本実
施例は薄膜状Ｐ−ｉ−ｎ接合型光センサーについ
て行なつたが、本発明はその他の受光素子全搬に
応用できるものである。 As described above, according to the present invention, a high-performance optical sensor with high quantum efficiency can be obtained. Although the present embodiment was carried out with respect to a thin film P-i-n junction type optical sensor, the present invention can be applied to all other types of light-receiving elements.
第１図ａ，ｂは従来の光センサーの断面図、第
２図ａ〜ｆは本発明の一実施例の製造工程図、第
３図は第２図で製造されたセンサーの概略平面図
である。
１……ｎ層、２……ｎ(i)層、３……Ｐ層、４…
…Al電極、６……溝、７……PSG、８……Al
（光反射凹面鏡）。
Figures 1 a and b are cross-sectional views of a conventional optical sensor, Figures 2 a to f are manufacturing process diagrams of an embodiment of the present invention, and Figure 3 is a schematic plan view of the sensor manufactured in Figure 2. be. 1...n layer, 2...n(i) layer, 3...P layer, 4...
...Al electrode, 6...groove, 7...PSG, 8...Al
(Light reflective concave mirror).
Claims (1)
に、前記Pn接合を越える深さの環状もしくは一
部が分断された略環状の溝を穿ち、同溝で全周も
しくはほぼ全周が包囲された台形状の光電変換部
を形成したのち、前記溝の外側側面にリンケイ酸
ガラス層を形成し、次いで、熱処理を施し前記リ
ンケイ酸ガラス層を溶融もしくは軟化流動させて
わん曲面を形成し、こののち、同わん曲面上に光
反射層を形成することを特徴とする受光素子の製
造方法。1. In a substrate in which a Pn junction parallel to the main surface is formed, an annular or partially annular groove with a depth exceeding the Pn junction is bored, and the entire circumference or almost the entire circumference is surrounded by the same groove. After forming a trapezoidal photoelectric conversion portion, a phosphosilicate glass layer is formed on the outer side surface of the groove, and then heat treatment is performed to melt or soften and flow the phosphosilicate glass layer to form a curved surface, A method for manufacturing a light-receiving element, characterized in that a light-reflecting layer is then formed on the same curved surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56150335A JPS5850784A (en) | 1981-09-21 | 1981-09-21 | Manufacture of light receiving element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56150335A JPS5850784A (en) | 1981-09-21 | 1981-09-21 | Manufacture of light receiving element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5850784A JPS5850784A (en) | 1983-03-25 |
| JPS6244865B2 true JPS6244865B2 (en) | 1987-09-22 |
Family
ID=15494753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56150335A Granted JPS5850784A (en) | 1981-09-21 | 1981-09-21 | Manufacture of light receiving element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5850784A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5150182A (en) * | 1988-06-07 | 1992-09-22 | The Boeing Company | Semiconductor device enhanced for optical interaction |
| US5045908A (en) * | 1990-09-25 | 1991-09-03 | Motorola, Inc. | Vertically and laterally illuminated p-i-n photodiode |
| CN115274912B (en) * | 2022-08-01 | 2024-01-30 | 中国电子科技集团公司第四十四研究所 | High spatial resolution X-ray detector unit, detector and method for manufacturing the same |
-
1981
- 1981-09-21 JP JP56150335A patent/JPS5850784A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5850784A (en) | 1983-03-25 |
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