JPS6244538Y2 - - Google Patents
Info
- Publication number
- JPS6244538Y2 JPS6244538Y2 JP1982114087U JP11408782U JPS6244538Y2 JP S6244538 Y2 JPS6244538 Y2 JP S6244538Y2 JP 1982114087 U JP1982114087 U JP 1982114087U JP 11408782 U JP11408782 U JP 11408782U JP S6244538 Y2 JPS6244538 Y2 JP S6244538Y2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- radiator
- heat
- heatsink
- welded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 6
- 230000017525 heat dissipation Effects 0.000 claims description 3
- 238000001816 cooling Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 4
- 238000001125 extrusion Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Cooling Or The Like Of Electrical Apparatus (AREA)
Description
【考案の詳細な説明】 〔考案の技術分野〕 本考案は、半導体装置用放熱器に係る。[Detailed explanation of the idea] [Technical field of invention] The present invention relates to a heat sink for semiconductor devices.
素材を引き抜き加工あるいは押し出し加工して
製作した半導体装置用放熱器として第１図および
第２図に示すようなものがある。
2. Description of the Related Art There are heat sinks for semiconductor devices manufactured by drawing or extruding materials as shown in FIGS. 1 and 2.
これらの放熱器１は、一般にアルミニユーム
Alを素材とし、図示のような多数のフイン２あ
るいは空洞３を有する断面に対応する金型を用い
て引き抜きあるいは押し出し加工により製作され
る。 These heat sinks 1 are generally made of aluminum
The material is made of Al and is produced by drawing or extrusion using a mold corresponding to the cross section having a large number of fins 2 or cavities 3 as shown in the figure.
上記のようにして製作された放熱器１は搭載す
る半導体装置の占有面積などを考慮して適当な長
さに切断して使用されるが、これには次のような
問題がある。 The heat sink 1 manufactured as described above is cut into an appropriate length in consideration of the area occupied by the semiconductor device to be mounted, etc., but this has the following problems.
〔背景技術の問題点〕
(1) 放熱器の断面形状が大きいものについては素
材を引き抜き加工あるいは押し出し加工して製
作するために限度があること。[Problems with the background art] (1) There are limits to the manufacture of heat sinks with large cross-sectional shapes because they can be manufactured by drawing or extruding the material.
(2) 大電力用の半導体装置を放熱器に取り付けて
使用する場合には、図示の長手方向の長さを長
くして使用するが、取り付け箇所の形状、スペ
ースなどによりその取り付けに支障を期すこと
があること。(2) When using a high-power semiconductor device attached to a heatsink, the length in the longitudinal direction shown in the illustration should be increased, but installation may be hindered due to the shape of the attachment point, space, etc. There are things that happen.
(3) 上記２の場合、一般に放熱器の一端に冷却フ
アンを設け、このフアンにより強制冷却するが
放熱器が長手方向に長い場合には、冷却フアン
を取り付ける側と反対側、すなわち風向きの下
方では風力が弱くなり十分冷却されず、特に第
２図に示すような内部に空洞があるものでは風
圧に対する抵抗が大きく十分冷却されないこ
と。(3) In the case of 2 above, a cooling fan is generally installed at one end of the radiator, and this fan performs forced cooling. However, if the radiator is long in the longitudinal direction, the side opposite to where the cooling fan is installed, that is, the downward direction of the wind. In this case, the wind force will be weak and the cooling will not be sufficient.In particular, if there is a cavity inside as shown in Figure 2, the resistance to the wind pressure will be large and the cooling will not be sufficient.
(4) 半導体装置の取り付け面の面積を大きくする
には、長手方向の長さを長くするのみで、複数
の半導体装置をスペースの無駄を省き、かつ冷
却効率を損なうことなく配置する場合の設計の
自由度が限定されてしまうこと。(4) Design for arranging multiple semiconductor devices without wasting space and without sacrificing cooling efficiency by simply increasing the length in the longitudinal direction in order to increase the area of the mounting surface for semiconductor devices. freedom is limited.
本考案は、上記の事情に基づきなされたもので
幅方向に断面形状の大きな、かつ放熱効果の高い
半導体装置用放熱器を提供することを目的とす
る。
The present invention has been made based on the above-mentioned circumstances, and an object of the present invention is to provide a heat sink for a semiconductor device that has a large cross-sectional shape in the width direction and has a high heat dissipation effect.
〔考案の概要〕
素材を引き抜き加工あるいは押し出し加工して
製作した半導体装置用放熱器を複数個、並列に並
べてその長手方向両端において溶接し、幅方向の
断面形状を大きくするとともに、溶接部にも風洞
を形成したことを特徴とする。[Summary of the idea] A plurality of heat sinks for semiconductor devices manufactured by drawing or extruding materials are arranged in parallel and welded at both ends in the longitudinal direction. It is characterized by the formation of a wind tunnel.
第３図は、本考案の一実施例を示す端面図であ
る。
FIG. 3 is an end view showing one embodiment of the present invention.
同図において、放熱器１０はその外周の三面に
多数の放熱フイン１１を有し、残りの一面１２は
半導体装置を搭載する面として平坦に仕上げられ
る。 In the figure, a heat radiator 10 has a large number of heat radiating fins 11 on three surfaces of its outer periphery, and the remaining surface 12 is finished flat as a surface on which a semiconductor device is mounted.
上記四面の壁に囲まれた放熱器１０の内部に
は、規則的あるいは不規則的に配列された多数の
空洞Ｈが形成され、この空洞Ｈの内壁面にも多数
の放熱フイン１３が設けられる。 A large number of cavities H arranged regularly or irregularly are formed inside the radiator 10 surrounded by the four walls, and a large number of radiating fins 13 are also provided on the inner wall surface of the hollow H. .
上記のような断面形状を有する放熱器１０は、
Alを素材として、上記の断面形状に対応する金
型を用い、引き抜き加工あるいは押し出し加工に
よつて製作することができる。 The heat radiator 10 having the above cross-sectional shape is
It can be manufactured from Al as a material by drawing or extrusion using a mold corresponding to the above-mentioned cross-sectional shape.
上記の放熱器１０を単体とし、幅方向（横方
向）に並列に並べ、その突き合せ部１４，１５に
おいて、その長手方向に沿つて溶接し、溶接部１
６を形成する。 The above-mentioned radiators 10 are made into a single unit, arranged in parallel in the width direction (horizontal direction), and welded along the longitudinal direction at the abutted parts 14 and 15, and the welded part 1
form 6.
突き合せ部１４，１５を含む部分にも空洞部が
形成されるように、あらかじめ突き合わせ部１
４，１５は放熱フイン１１よりも長く形成してお
く。 The abutting portion 1 is formed in advance so that a hollow portion is also formed in the portion including the abutting portions 14 and 15.
4 and 15 are formed longer than the heat radiation fins 11.
なお、半導体装置を搭載する面１２は、平坦に
仕上げ加工されるが、その場合、溶接部１６も同
時に仕上げられる。 Note that the surface 12 on which the semiconductor device is mounted is finished flat, and in that case, the welded portion 16 is also finished at the same time.
上記のように構成することにより、幅方向に断
面形状の大きな放熱器が得られ、したがつて、半
導体装置の取り付け面を幅方向に広くとることが
でき、複数の半導体装置を配置する場合に設計の
自由度が大きくなる。
By configuring as described above, a heatsink with a large cross-sectional shape in the width direction can be obtained. Therefore, the mounting surface of the semiconductor device can be widened in the width direction, and when multiple semiconductor devices are arranged, Greater freedom in design.
さらに、大電力用の半導体装置を搭載する場合
に、従来では放熱器の長手方向の長さを長くして
いたが、上記のものを用いれば、この必要がなく
冷却フアンによる強制風冷の場合に冷却効率を低
下させることがない。 Furthermore, when mounting a high-power semiconductor device, conventionally the length of the heatsink was increased in the longitudinal direction, but if the above-mentioned one is used, this is no longer necessary, and forced air cooling using a cooling fan can be used. without reducing cooling efficiency.
本考案の特長は、第３図に示すように単体の放
熱器１１のみで風洞が形成されている放熱器を二
個、並列に配置して溶接した後でも、放熱器全体
は外周四面の壁に囲まれた内部に風洞を有する放
熱器として構成される。これにより冷却フアンに
よる風が外部に漏れることなく風洞内を流れ放熱
効果の高い放熱器が得られる。 The feature of the present invention is that, as shown in Fig. 3, even after two radiators are arranged in parallel and welded to form a wind tunnel with only a single radiator 11, the entire radiator is not connected to the four walls of the outer periphery. It is configured as a radiator with a wind tunnel inside surrounded by. As a result, the air from the cooling fan flows through the wind tunnel without leaking to the outside, and a radiator with high heat dissipation effect can be obtained.
なお、上記の実施例では、放熱器を二個、並列
に配置して溶接した場合を図示したが、これに限
定されるものではなく、三個あるいはそれ以上の
放熱器を接続しても同様の効果が得られる。 In the above embodiment, two heat sinks are arranged in parallel and welded together, but this is not limited to this, and the same effect can be obtained by connecting three or more heat sinks.
第１図および第２図は、従来の半導体装置用放
熱器の斜視図、第３図は、本考案に係る放熱器の
端面図である。
１０……放熱器、１１，１３……放熱フイン、
１４，１５……突き合せ部、１６……溶接部。
1 and 2 are perspective views of a conventional heat sink for a semiconductor device, and FIG. 3 is an end view of a heat sink according to the present invention. 10... Heat radiator, 11, 13... Heat radiating fin,
14, 15... Butt portion, 16... Welding portion.
Claims (1)
長手方向に直角の断面の外周三面は放熱フインを
有し、残りの一面は半導体装置を搭載する平坦面
とし、前記四面の壁に囲まれた内部には多数の空
洞が形成された放熱器、該放熱器を幅方向に並列
に配置し、その突き合せ部を溶接したときに、こ
の突き合せ部にも空洞が形成されるようにすると
ともに、半導体装置の取り付け面を広くしたこと
を特徴とする半導体装置用放熱器。 The outer three sides of the cross section perpendicular to the longitudinal direction of the drawn or extruded material have heat dissipation fins, and the remaining side is a flat surface on which the semiconductor device is mounted. A heatsink in which a cavity is formed, when the heatsinks are arranged in parallel in the width direction and their abutted parts are welded, a cavity is also formed in this abutted part, and a semiconductor device is attached. A heatsink for semiconductor devices characterized by a wide surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11408782U JPS5920639U (en) | 1982-07-29 | 1982-07-29 | Heatsink for semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11408782U JPS5920639U (en) | 1982-07-29 | 1982-07-29 | Heatsink for semiconductor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5920639U JPS5920639U (en) | 1984-02-08 |
| JPS6244538Y2 true JPS6244538Y2 (en) | 1987-11-25 |
Family
ID=30263856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11408782U Granted JPS5920639U (en) | 1982-07-29 | 1982-07-29 | Heatsink for semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5920639U (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6130292U (en) * | 1984-07-26 | 1986-02-24 | 三菱アルミニウム株式会社 | Heatsink for electrical elements |
| JPH0718150Y2 (en) * | 1987-11-27 | 1995-04-26 | 日本電気株式会社 | Resistance heating electrode |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55156497U (en) * | 1979-04-26 | 1980-11-11 |
-
1982
- 1982-07-29 JP JP11408782U patent/JPS5920639U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5920639U (en) | 1984-02-08 |
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