JPS6239393B2 - - Google Patents

Info

Publication number
JPS6239393B2
JPS6239393B2 JP54132670A JP13267079A JPS6239393B2 JP S6239393 B2 JPS6239393 B2 JP S6239393B2 JP 54132670 A JP54132670 A JP 54132670A JP 13267079 A JP13267079 A JP 13267079A JP S6239393 B2 JPS6239393 B2 JP S6239393B2
Authority
JP
Japan
Prior art keywords
abnormal current
magnetic field
magnetoresistive element
output voltage
insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54132670A
Other languages
Japanese (ja)
Other versions
JPS5655873A (en
Inventor
Naotoshi Takaoka
Isamu Eguchi
Mitsuharu Hisatomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Takamatsu Electric Works Ltd
Original Assignee
Takamatsu Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Takamatsu Electric Works Ltd filed Critical Takamatsu Electric Works Ltd
Priority to JP13267079A priority Critical patent/JPS5655873A/en
Publication of JPS5655873A publication Critical patent/JPS5655873A/en
Publication of JPS6239393B2 publication Critical patent/JPS6239393B2/ja
Granted legal-status Critical Current

Links

Description

【発明の詳細な説明】 本発明は異常電流の検出装置に関するものであ
る。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an abnormal current detection device.

従来の異常電流検出装置として、変成器若くは
サーチコイルが使用されている。ところが前者は
通過電流による磁化現象を利用したリンクモーシ
ヨンによるもので、変成器の結合部の状態変化に
よつて検出感度が非常に変化するものであつた。
又、後者は所要検出感度を得るために、通過電流
近傍に設置しかつコイル巻数を非常に多くしなけ
ればならなかつた。従つて、寸法的にかなり大き
くなり、碍子等へ内蔵した場合、所要の絶縁信頼
性を得るためには、同じ絶縁階級の碍子の場合に
比べて大きいものにする必要があつた。又、サー
チコイルの取付けの方向性により検出感度が変化
するという問題もあつた。
A transformer or a search coil is used as a conventional abnormal current detection device. However, the former method is based on a link motion that utilizes a magnetization phenomenon caused by a passing current, and the detection sensitivity varies greatly depending on changes in the state of the coupling portion of the transformer.
Moreover, in order to obtain the required detection sensitivity, the latter must be installed near the passing current and have a very large number of coil turns. Therefore, it becomes quite large in size, and when built into an insulator or the like, it has to be larger than an insulator of the same insulation class in order to obtain the required insulation reliability. Another problem was that the detection sensitivity varied depending on the direction in which the search coil was attached.

本発明は碍子に磁気抵坑素子を内蔵することに
より、電流通過導体に対し変成器等のように導線
を巻く機械的ループ構成をしなくても異常電流を
検出でき、素子自体非常に小さく検出感度も良好
であるという特性を利用して、電流通過導体と素
子間の絶縁距離を大きくとり絶縁信頼性を向上す
ることができるとともに、碍子寸法を従来の碍子
内蔵形変成器(ICT)と比較して小さくすること
ができる異常電流の検出装置を提供することにあ
る。
By incorporating a magnetoresistive element into the insulator, the present invention can detect abnormal currents without having to create a mechanical loop configuration in which a conductor is wound around a current-carrying conductor, such as in a transformer, and the element itself can detect extremely small amounts of current. Utilizing the characteristic of good sensitivity, it is possible to increase the insulation distance between the current-carrying conductor and the element to improve insulation reliability, and to compare the insulator dimensions with conventional insulator-integrated transformers (ICT). An object of the present invention is to provide an abnormal current detection device that can be made smaller.

以下、本発明を具体化した一実施例を図面につ
いて説明すると、図中1は中心部に下端を開口し
た中空部1aを形成した支持碍子であつて、その
上端部には電力線2が支持されている。
Hereinafter, an embodiment embodying the present invention will be described with reference to the drawings. In the drawing, 1 is a support insulator having a hollow part 1a with an open lower end in the center, and a power line 2 is supported at the upper end thereof. ing.

3は前記支持碍子1の中空部1a内頂部に挿入
した検出素子であつて、中空部1a内に挿入され
接着剤4により固定された有機絶縁材料よりなる
支持棒5の内端に下半部を埋込み固定するととも
に、同素子3からは4本のリード線6a,6b,
6c,6dが前記支持棒5内を通つて外部へ導出
されている。
Reference numeral 3 denotes a detection element inserted into the top of the hollow portion 1a of the support insulator 1, and the lower half of the support rod 5 made of an organic insulating material is inserted into the hollow portion 1a and fixed with an adhesive 4. is embedded and fixed, and four lead wires 6a, 6b,
6c and 6d pass through the support rod 5 and are led out to the outside.

7は前記検出素子3を構成する磁気抵坑素子で
あつて、第3図に示すように抵坑R1,R2の等価
回路として表わされ、前記検出素子3に内蔵した
別の抵坑R3,R4と前記抵坑R1,R2とによりブリ
ツジ回路を構成している。8は前記検出素子3の
リード線6a,6bに接続したバイアス電源であ
つて、前記抵坑R1〜R4よりなるブリツジ回路に
常時直流電圧を供給するようになつている。9は
前記検出素子3のリード線6c,6dに接続した
出力端子であつて、前記抵坑R1〜R4のブリツジ
回路において抵坑値R1,R4とR2,R3が等しいと
きには同端子9間の出力電圧は零となり、抵坑値
R1,R4とR2,R3に差が生じたときには同端子9
間に電圧が発生するようになつている。
Reference numeral 7 denotes a magnetoresistive element constituting the detecting element 3, which is represented as an equivalent circuit of resistors R 1 and R 2 as shown in FIG. A bridge circuit is constituted by R 3 , R 4 and the resistors R 1 , R 2 . A bias power supply 8 is connected to the lead wires 6a and 6b of the detection element 3, and is designed to constantly supply a DC voltage to the bridge circuit made up of the resistors R1 to R4 . 9 is an output terminal connected to the lead wires 6c and 6d of the detection element 3, and when the resistance values R 1 and R 4 are equal to R 2 and R 3 in the bridge circuit of the resistances R 1 to R 4, The output voltage between the same terminals 9 becomes zero, and the resistance value
If there is a difference between R 1 , R 4 and R 2 , R 3 , the same terminal 9
A voltage is now generated between them.

前記磁気抵坑素子7は磁界が作用すると抵坑
R1,R2が増加率を異にして大きくなり、従つて
抵坑値R1,R4とR2,R3に差が生じて前記端子9
間に電圧を発生させるという特性を有している。
すなわち電力線2に異常電流が発生し、この異常
電流により生じる磁界が第3図に示すように前記
磁気抵坑素子7に対し平行に作用し、磁界強度H
が増加すると、前記出力端子9に発生する出力電
圧Vが第3図d〜bで示すように増加し、磁界強
度Hが減少すると、出力電圧Vが同図b〜aで示
すように減少し、磁界強度Hが零になつても磁気
抵坑素子7自体の残留磁界によつて出力端子9に
は同図a点で示すように残留出力電圧が発生する
というヒステリシス特性を有している。
The magnetoresistive element 7 becomes a resistor when a magnetic field acts on it.
R 1 and R 2 increase at different rates, and therefore a difference occurs between the resistance values R 1 and R 4 and R 2 and R 3 , and the terminal 9
It has the property of generating a voltage between them.
That is, an abnormal current occurs in the power line 2, and the magnetic field generated by this abnormal current acts in parallel to the magnetoresistive element 7 as shown in FIG. 3, and the magnetic field strength H
When the magnetic field strength H increases, the output voltage V generated at the output terminal 9 increases as shown in FIG. 3 d to b, and when the magnetic field strength H decreases, the output voltage V decreases as shown in the same figure b to a. It has a hysteresis characteristic in that even when the magnetic field strength H becomes zero, a residual output voltage is generated at the output terminal 9 due to the residual magnetic field of the magnetoresistive element 7 itself, as shown at point a in the figure.

反対に、前記磁気抵坑素子7に垂直の磁界が作
用し、磁界強度Hが増加すると、出力端子9の出
力電圧Vは第3図a〜cで示すように増加し、磁
界強度Hが減少すると出力電圧Vが同図c〜dに
示すように減少し、磁界強度Hが零になつても前
述したように素子7自体の残留磁界によつて第3
図d点で示すように逆方向の残留出力電圧が発生
するという特性を有している。
On the contrary, when a perpendicular magnetic field acts on the magnetoresistive element 7 and the magnetic field strength H increases, the output voltage V of the output terminal 9 increases as shown in FIGS. 3a to 3c, and the magnetic field strength H decreases. Then, the output voltage V decreases as shown in c to d of the same figure, and even when the magnetic field strength H becomes zero, the third
It has a characteristic that a residual output voltage in the opposite direction is generated as shown at point d in the figure.

又、本発明実施例においては、磁気抵坑素子7
と電力線2の関係位置は第1図に示すように一定
であるので、同素子7には平行の磁界のみが作用
するようになつている。従つて、出力端子9の出
力電圧Vは第3図に実線で示すa〜bの特性曲線
に基づいて表われるようになつている。
Moreover, in the embodiment of the present invention, the magnetoresistive element 7
Since the relative positions of the power line 2 and the power line 2 are constant as shown in FIG. 1, only parallel magnetic fields act on the element 7. Therefore, the output voltage V of the output terminal 9 appears based on the characteristic curve a to b shown by the solid line in FIG.

なお、前記出力端子9には図示しないが検出表
示回路が接続され、磁界強度Hが第3図のように
Haとなり出力電圧VがVaとなつたとき、その出
力電圧Vaを検出して表示するようになつてい
る。
Note that a detection display circuit (not shown) is connected to the output terminal 9, and the magnetic field strength H is as shown in FIG.
When the output voltage V becomes Ha, the output voltage Va is detected and displayed.

次に、前記のように構成した異常電流の検出装
置についてその作用を説明する。
Next, the operation of the abnormal current detection device configured as described above will be explained.

今、短絡等により電力線2に異常電流が流れる
と、その周りに磁界が発生しこの磁界は磁気抵坑
素子7に平行磁界として作用する。そして、この
平行磁界により素子7の抵坑R1とR2が増加率を
異にして大きくなると、抵坑値R1,R4とR2,R3
の差が残留磁界による抵坑値の差よりも大きくな
り、従つて出力端子9に残留出力電圧aよりも大
きい電圧が発生する。そして、磁界強度HがHa
となり出力電圧VがVaとなつたとき、検出表示
回路(図示しない)が作動され、電力線2に異常
電流が流れたことを検出表示する。なお、異常電
流がなくなり磁気抵坑素子7に作用する磁界がな
くなると、出力端子9間の電圧は第3図Vaから
aに復帰される。
Now, when an abnormal current flows through the power line 2 due to a short circuit or the like, a magnetic field is generated around it, and this magnetic field acts on the magnetoresistive element 7 as a parallel magnetic field. When the resistances R 1 and R 2 of the element 7 increase at different rates due to this parallel magnetic field, the resistance values R 1 , R 4 and R 2 , R 3 increase.
The difference in resistance value becomes larger than the difference in resistance value due to the residual magnetic field, and therefore, a voltage larger than the residual output voltage a is generated at the output terminal 9. Then, the magnetic field strength H is Ha
When the output voltage V reaches Va, a detection and display circuit (not shown) is activated to detect and display that an abnormal current has flowed through the power line 2. Note that when the abnormal current disappears and the magnetic field acting on the magnetoresistive element 7 disappears, the voltage between the output terminals 9 returns from Va to a in FIG. 3.

さて、本発明実施例においては、支持碍子1の
中空部1aの内頂部に磁気抵坑素子7を一体に組
込んだ検出素子3を内蔵し、電力線2に発生する
磁界を前記素子7により電圧に変換して検出し得
るように構成したので、電力線1と機械的にルー
プ構成することなく異常電流を検出することがで
き、素子7も非常に小さいことから碍子1を小型
化することができ、又検出感度の良好な素子7を
使用するので電力線2と同素子7の絶縁距離を大
きくとり絶縁信頼性を向上させることができる。
Now, in the embodiment of the present invention, a detection element 3 in which a magnetoresistive element 7 is integrated is built into the inner top part of the hollow part 1a of the support insulator 1, and the magnetic field generated in the power line 2 is converted into a voltage by the element 7. Since it is configured so that it can be detected by converting it into a power line, abnormal current can be detected without forming a mechanical loop with the power line 1, and since the element 7 is also very small, the insulator 1 can be miniaturized. Also, since the element 7 with good detection sensitivity is used, the insulation distance between the power line 2 and the element 7 can be increased, and the insulation reliability can be improved.

なお、前記実施例では磁気抵坑素子7と抵坑
R3,R4により検出素子3を一体状に形成して碍
子1に内蔵したが、磁気抵坑素子7のみを内蔵す
るようにしてもよい。
In addition, in the above embodiment, the magnetoresistive element 7 and the resistor
Although the detection element 3 is formed integrally with R 3 and R 4 and is housed in the insulator 1, only the magnetoresistive element 7 may be housed therein.

又、前記実施例では検出素子3の出力電圧Vを
検出する手段として、ブリツジ回路を使用した
が、これ以外に例えばポテンシヨメータ等を使用
してもよい。
Further, in the embodiment described above, a bridge circuit was used as a means for detecting the output voltage V of the detection element 3, but other than this, for example, a potentiometer or the like may be used.

以上詳述したように本発明は、電流通過導体に
流れる異常電流によつて、同導体の周りに発生す
る磁界により出力電圧を発生する特性を有する前
記異常電流検出用の磁気抵坑素子を碍子に内蔵し
たことにより、電流通過導体に対し機械的にルー
プ構成しないで異常電流を検出でき、素子自体非
常に小さく検出感度も良好であるので、碍子寸法
を従来の碍子内蔵形変成器(ICT)と比較して小
さくすることができるとともに、電流通過導体と
素子間の絶縁距離を大きくとることができ、絶縁
信頼性を向上することができる効果がある。
As described in detail above, the present invention provides a magnetoresistive element for detecting abnormal current, which has the characteristic of generating an output voltage due to the magnetic field generated around the conductor due to the abnormal current flowing through the current passing conductor. By incorporating it into the insulator, it is possible to detect abnormal current without mechanically configuring a loop for the current-carrying conductor.The element itself is very small and has good detection sensitivity, so the insulator dimensions can be compared to those of conventional insulator-integrated transformers (ICT). It is possible to make the insulation distance smaller than that of the current passing conductor and the element, and the insulation reliability can be improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の異常電流の検出装置を具体化
した一実施例を示す断面図、第2図は磁気抵坑素
子の電圧検出回路図、第3図は磁気抵坑素子の磁
界強度―出力電圧のヒステリシス特性曲線図であ
る。 支持碍子1、電力線2、リード線6a,6b,
6c、磁気抵坑素子7、出力端子9、抵坑R1
R4、磁界強度H、出力電圧V。
Fig. 1 is a sectional view showing an embodiment of the abnormal current detection device of the present invention, Fig. 2 is a voltage detection circuit diagram of a magnetoresistive element, and Fig. 3 is a magnetic field strength of the magnetoresistive element. FIG. 3 is a hysteresis characteristic curve diagram of output voltage. Support insulator 1, power line 2, lead wires 6a, 6b,
6c, magnetoresistive element 7, output terminal 9, resistor R 1 ~
R 4 , magnetic field strength H, output voltage V.

Claims (1)

【特許請求の範囲】 1 電流通過導体に流れる異常電流によつて、同
導体の周りに発生する磁界により出力電圧を発生
する特性を有する前記異常電流検出用の磁気抵坑
素子を碍子に内蔵したことを特徴とする異常電流
の検出装置。 2 磁気抵坑素子は異常電流による磁界強度が零
になつても残留磁界により残留電圧を生ずるヒス
テリシス特性を有するものである特許請求の範囲
第1項記載の異常電流の検出装置。 3 磁気抵坑素子の出力電圧を検出する手段はブ
リツジ回路である特許請求の範囲第1項記載の異
常電流の検出装置。 4 磁気抵坑素子は、同素子と別の抵坑とにより
ブリツジ回路を構成し、同回路は一体状に検出素
子として組込まれ、同検出素子が碍子に内蔵され
ている特許請求の範囲第1項記載の異常電流の検
出装置。
[Scope of Claims] 1. The magnetoresistive element for abnormal current detection, which has a characteristic of generating an output voltage by a magnetic field generated around the conductor due to an abnormal current flowing through the current passing conductor, is built into an insulator. An abnormal current detection device characterized by: 2. The abnormal current detection device according to claim 1, wherein the magnetoresistive element has a hysteresis characteristic that generates a residual voltage due to a residual magnetic field even when the magnetic field strength due to the abnormal current becomes zero. 3. The abnormal current detection device according to claim 1, wherein the means for detecting the output voltage of the magnetoresistive element is a bridge circuit. 4. The magnetoresistive element constitutes a bridge circuit by the element and another resistor, and the circuit is integrated as a detection element, and the detection element is built in the insulator. Abnormal current detection device as described in .
JP13267079A 1979-10-15 1979-10-15 Detecting device for abnormal current Granted JPS5655873A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13267079A JPS5655873A (en) 1979-10-15 1979-10-15 Detecting device for abnormal current

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13267079A JPS5655873A (en) 1979-10-15 1979-10-15 Detecting device for abnormal current

Publications (2)

Publication Number Publication Date
JPS5655873A JPS5655873A (en) 1981-05-16
JPS6239393B2 true JPS6239393B2 (en) 1987-08-22

Family

ID=15086745

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13267079A Granted JPS5655873A (en) 1979-10-15 1979-10-15 Detecting device for abnormal current

Country Status (1)

Country Link
JP (1) JPS5655873A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0586705U (en) * 1992-04-27 1993-11-22 日産ディーゼル工業株式会社 Structure of vehicle speaker box

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61142331U (en) * 1985-02-25 1986-09-03
JPH0439606Y2 (en) * 1985-03-20 1992-09-17
JPH0285775A (en) * 1988-09-21 1990-03-27 Ngk Insulators Ltd Device for detecting faulty point of transmission line

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0586705U (en) * 1992-04-27 1993-11-22 日産ディーゼル工業株式会社 Structure of vehicle speaker box

Also Published As

Publication number Publication date
JPS5655873A (en) 1981-05-16

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