JPH0293373A - Current detector - Google Patents

Current detector

Info

Publication number
JPH0293373A
JPH0293373A JP63245784A JP24578488A JPH0293373A JP H0293373 A JPH0293373 A JP H0293373A JP 63245784 A JP63245784 A JP 63245784A JP 24578488 A JP24578488 A JP 24578488A JP H0293373 A JPH0293373 A JP H0293373A
Authority
JP
Japan
Prior art keywords
film
current
magnetic
conductive film
yoke
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63245784A
Other languages
Japanese (ja)
Inventor
Yoshi Yoshino
吉野 好
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP63245784A priority Critical patent/JPH0293373A/en
Publication of JPH0293373A publication Critical patent/JPH0293373A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/205Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using magneto-resistance devices, e.g. field plates

Abstract

PURPOSE:To achieve miniaturization and to enhance accuracy by arranging a film magnetoresistance element to a part of the magnetic yoke membrane of a closed magnetic circuit surrounding a conductive film. CONSTITUTION:A magnetic membrane yoke 3 forming a magnetic closed circuit is provided so as to surround the current applying direction of a conductive film 5 and a ferromagnetic film magnetoresistance element 2 insulated from the film 5 by an insulating film 4 is arranged to a part of the magnetic closed circuit. The magnetic field proportional to the current flowing to the film 5 is generated to be converged to the yoke 3 to be measured as a resistance value by the element 2. As a result, a current detector having small constitution and capable of performing measurement with high accuracy without receiving the effect of an inductance component is obtained.

Description

【発明の詳細な説明】 [産業上の利用分野] この発明は電流検出器に閉覆るものである。[Detailed description of the invention] [Industrial application field] This invention is applied to a current detector.

[従来技術] 従来、電流検出器は被測定分流器の両端に加わる電位を
差動増幅させ検出するものであるか、被測定分流器の電
位か高い場合には感度を!4ねる欠点があった。この対
策として、例えば、特開昭53−118175号公報に
示されているように、被測定電流をコイルに流して磁界
を発生させホール素子又は磁気抵抗素子で検出する方法
が考えられている。
[Prior Art] Conventionally, current detectors have been designed to differentially amplify and detect the potential applied to both ends of the shunt to be measured, or to increase sensitivity when the potential of the shunt to be measured is high. There were four drawbacks. As a countermeasure against this problem, for example, as shown in Japanese Patent Application Laid-Open No. 53-118175, a method has been considered in which a current to be measured is passed through a coil to generate a magnetic field, which is detected by a Hall element or a magnetoresistive element.

[発明が解決しようと覆る課題] しかし、この場合、被測定電流の回路に[−成分(イン
タグクタンス成分)が入るという問題があるとともに、
コイルと検出素子の一体化が難しく別部品となるため小
型化に限界があり、かつ取(4時にギャップのバラツキ
が大きくなり調整が必要となる欠点がある。
[Problem that the invention attempts to solve] However, in this case, there is a problem that a - component (intaguctance component) enters the circuit of the current to be measured, and
Since it is difficult to integrate the coil and the detection element and they are separate parts, there is a limit to miniaturization, and there is a drawback that the gap at the 4 o'clock position varies widely and requires adjustment.

この発明の目的は、小型で、高精度な電流検出器を提供
することにある。
An object of the present invention is to provide a small and highly accurate current detector.

[課題を解決するための手段〕 この発明は、被測定電流が流れる薄膜の導電膜と、前記
導電膜の電流印加方向の回りを囲むように配設され、閉
lla気回路を形成するための薄I漠の磁気ヨーク膜と
、前記磁気ヨーク膜により形成された閉磁気回路の一部
に、前記導電膜と絶縁された状態で配設される簿膜の磁
気抵抗素子と、を絶縁基板上に配設した電流検出器をそ
の要旨とするものである。
[Means for Solving the Problems] The present invention includes a thin conductive film through which a current to be measured flows, and a thin conductive film arranged to surround the conductive film in the current application direction to form a closed circuit. A thin magnetic yoke film and a thin film magnetoresistive element disposed in a part of the closed magnetic circuit formed by the magnetic yoke film in a state insulated from the conductive film, on an insulating substrate. The gist of this is a current detector installed in the

[作用] 導電膜に流れる被測定電流によりその電流の大きさに比
例した磁界が発生し、磁気ヨーク膜にその磁界が集束さ
れ、磁気ヨーク膜により形成された閉磁気回路の磁界の
強さが磁気抵抗素子にJこり抵抗値として取出される。
[Function] The measured current flowing through the conductive film generates a magnetic field proportional to the magnitude of the current, and the magnetic field is focused on the magnetic yoke film, and the strength of the magnetic field of the closed magnetic circuit formed by the magnetic yoke film increases. The J resistance value is taken out by the magnetic resistance element.

[実施例] この発明を具体化した一実施例を図面に従って説明する
[Example] An example embodying the present invention will be described with reference to the drawings.

本実施例は、電流検出器にて電流リミッタを構成したも
のである。
In this embodiment, a current limiter is configured using a current detector.

第2図、及びその第2図のΔ−A断面を示す第1図に電
流検出器Cを示ず。この電流検出器Cの製造工程を簡単
に説明する。絶縁基板1上に薄膜の強磁性磁気抵抗索子
2を口字状(第2図参照)に形成するととともに、その
強磁性磁気抵抗素子2の一部(第2図中、上下方向延設
部)を挟んで薄膜の磁気ヨーク膜3を形成する。
The current detector C is not shown in FIG. 2 and FIG. 1 showing the Δ-A cross section of FIG. The manufacturing process of this current detector C will be briefly explained. A thin film ferromagnetic magnetoresistive cable 2 is formed on an insulating substrate 1 in the shape of an opening (see FIG. 2), and a part of the ferromagnetic magnetoresistive element 2 (in FIG. 2, a vertically extending portion ) A thin magnetic yoke film 3 is formed with the magnetic yoke film 3 sandwiched therebetween.

ここで、強磁性磁気抵抗素子2はNi−Fe合金を使用
し、他にもFe、Co、N i等を主成分として含むも
のであればよい。この強磁性磁気抵抗素子2は電流の流
れる方向に対して直交する方向から磁界を受けると、そ
の部分の抵抗値が減少する特性を有している。又、磁気
ヨーク膜3及σ復記磁気ヨーク膜7は硬質磁性体、例え
ば、パーマロイ、Ni−Co合金、フェライト専が使用
される。
Here, the ferromagnetic magnetoresistive element 2 may be made of a Ni--Fe alloy, as long as it contains Fe, Co, Ni, etc. as a main component. This ferromagnetic magnetoresistive element 2 has a characteristic that when it receives a magnetic field from a direction perpendicular to the direction of current flow, the resistance value of that part decreases. Further, the magnetic yoke film 3 and the σ-recording magnetic yoke film 7 are made of a hard magnetic material, such as permalloy, Ni--Co alloy, or ferrite.

その強磁性磁気抵抗素子2及び磁気ヨーク膜3上に絶縁
膜4を形成した後、その絶縁膜4上に被測定電流を流す
薄膜の導電膜5を第2図中、上下方向に延設し、ざらに
、その導電膜5を含む絶縁膜4上を絶縁膜6で被覆する
After forming an insulating film 4 on the ferromagnetic magnetoresistive element 2 and the magnetic yoke film 3, a thin conductive film 5 through which the current to be measured flows is provided on the insulating film 4, extending in the vertical direction in FIG. Roughly, the insulating film 4 including the conductive film 5 is covered with an insulating film 6.

その1卦、絶縁膜4の不必要な部分を取除き、絶縁膜4
,6を覆うように薄膜の磁気ヨーク膜7を蒸着、エツチ
ングする。この磁気ヨーク膜7と前記磁気ヨーク3とに
より導電膜5の延設方向(電流印加方向)の回りが囲ま
れる。そして、その磁性ヨーク膜7及び磁気ヨーク膜3
を保護膜8て被覆する。
The first trigram is to remove unnecessary parts of the insulating film 4 and
, 6, a thin magnetic yoke film 7 is deposited and etched. This magnetic yoke film 7 and the magnetic yoke 3 surround the conductive film 5 in its extending direction (current application direction). Then, the magnetic yoke film 7 and the magnetic yoke film 3
is coated with a protective film 8.

このような半導体製造技術(薄膜r!A造技術)により
第1図及び第2図に示す電流検出器Cが製造される。
The current detector C shown in FIGS. 1 and 2 is manufactured using such semiconductor manufacturing technology (thin film R!A manufacturing technology).

尚、9a、9bは導電PA5に電流を流ずために開口さ
れた端子であり、10a、10bは強磁性磁気抵抗索子
2の出力を取出すために開口された端子である。
Note that 9a and 9b are terminals opened to prevent current from flowing through the conductive PA 5, and 10a and 10b are terminals opened to take out the output of the ferromagnetic magnetoresistive cable 2.

そして、導電膜5にIoなる被測定電流を流したとき右
ネジの法則により磁界ト1が発生する。その磁界1」は
、導電膜5の電流印加方向の回りを囲むように配設され
た磁気ヨーク膜3.7により閉磁気回路が形成されるた
めに集束される。その磁気ヨーク膜3,7にJ:る閉磁
気回路の一部に配置された強磁性磁気抵抗索子2には、
その強磁性磁気抵抗素子2の電流の流れる方向に直交す
る方向に磁界が動く。
When a current to be measured Io is passed through the conductive film 5, a magnetic field T1 is generated according to the right-handed screw rule. The magnetic field 1'' is focused because a closed magnetic circuit is formed by the magnetic yoke film 3.7 disposed so as to surround the conductive film 5 in the current application direction. The ferromagnetic magnetoresistive cable 2 disposed in a part of the closed magnetic circuit in the magnetic yoke films 3 and 7 includes:
The magnetic field moves in a direction perpendicular to the direction in which the current flows in the ferromagnetic magnetoresistive element 2.

そして、被測定電流の値1oが変化すると磁界1」が変
化して強磁↑ノ1磁気抵抗ふ子2の抵抗値が変化し、こ
の抵抗値により電流値1oをλ[することができる。
When the value 1o of the current to be measured changes, the magnetic field 1'' changes and the resistance value of the ferromagnetic ↑-1 magnetoresistive foot 2 changes, and this resistance value allows the current value 1o to be λ[.

第3図は電流検出器Cを組込んだ電流リミッタの回路図
を示す。
FIG. 3 shows a circuit diagram of a current limiter incorporating a current detector C.

端子9a、9bを介して導電膜5に電流が流れるように
接続されるとともに、端子10a、10bを介して強磁
性磁気抵抗素子2に定電流Iが印加されている。強磁性
磁気抵抗素子2の電源側接続点aには比較器11の一方
の入力端子に接続されている。又、比較器11の他方の
入力端子は基準電圧Oを発生する基準電源12が接続さ
れている。
A constant current I is applied to the ferromagnetic magnetoresistive element 2 via terminals 10a and 10b while being connected so that a current flows through the conductive film 5 via terminals 9a and 9b. A power supply side connection point a of the ferromagnetic magnetoresistive element 2 is connected to one input terminal of a comparator 11 . Further, the other input terminal of the comparator 11 is connected to a reference power supply 12 that generates a reference voltage O.

導電膜5に流れる被測定電流10が増加すると磁界Hが
大きくなり、強磁性磁気抵抗素子2の抵抗値Rが減少す
る。そして、予め設定された基準電圧Voに対し、Vo
≧I−Rとなったとき、比較器11の出力voutが反
転してリミット検出が行なわれる。
When the current to be measured 10 flowing through the conductive film 5 increases, the magnetic field H increases, and the resistance value R of the ferromagnetic magnetoresistive element 2 decreases. Then, with respect to a preset reference voltage Vo, Vo
When ≧IR, the output vout of the comparator 11 is inverted and limit detection is performed.

このように本実施例においては、半導体!!A造技術を
用いて絶縁基板1−1−に薄膜の導電膜5と薄膜の磁気
ヨーク膜3,7と薄膜の強磁性磁気抵抗素子2とを配置
することにより一体的な電流検出器が椙成される。従っ
て、小形化、高精度の電流検出器を、容易に精度良く大
量に製造することがr′きる。又、導電膜5に被測定電
流1oが流れると、その導電膜5の電流印加方向の回り
を囲むにうに配設した磁気ヨーク膜3.7に磁界が集束
され閉磁気回路を形成するために小電流を測定できると
ともに安定した電流測定を行なうことができる。
In this way, in this example, semiconductors! ! By arranging the thin conductive film 5, the thin magnetic yoke films 3 and 7, and the thin ferromagnetic magnetoresistive element 2 on the insulating substrate 1-1- using A manufacturing technology, an integrated current detector can be constructed. will be accomplished. Therefore, miniaturized, highly accurate current detectors can be manufactured easily and accurately in large quantities. Furthermore, when the current to be measured 1o flows through the conductive film 5, the magnetic field is focused on the magnetic yoke film 3.7 disposed to surround the conductive film 5 in the direction of current application, thereby forming a closed magnetic circuit. It is possible to measure small currents and to perform stable current measurements.

又、導電膜5でコイルを形成する必要がなく、L成分(
インダクタンス成分)が入らない。
Moreover, there is no need to form a coil with the conductive film 5, and the L component (
(inductance component) is not included.

さらに、導電lB55と強磁性磁気抵抗素子2とは絶縁
膜4,6により電気的に分離されており、耐圧も充分に
取ることができる。さらには、このような電流リミッタ
を製造する際に、第1図及び第2図で用いた絶縁基板1
にシリコン単結品を用い、そこに電流検出器とリミット
検出回路を半導体技術を用いて一体化することも可能と
なる。
Furthermore, the conductive lB 55 and the ferromagnetic magnetoresistive element 2 are electrically separated by the insulating films 4 and 6, and a sufficient withstand voltage can be ensured. Furthermore, when manufacturing such a current limiter, the insulating substrate 1 used in FIGS.
It is also possible to use a silicon single-crystal product and integrate a current detector and a limit detection circuit there using semiconductor technology.

尚、この発明は上記実施例に限定されることなく、第4
図及び第5図(第4図のB−8断面)に示すように、被
測定電流を流す導電膜24の上側に強磁性磁気抵抗素子
26を配置してもよい。即ち、絶縁基板21上に磁気ヨ
ーク膜22を蒸着し、パターン化する。その上に絶縁膜
23を形成した後、絶縁膜23上に被測定電流を流す導
電膜24を形成し、絶縁膜25で被覆する。その後、絶
縁膜25の不必要な部分を取除き、強磁性磁気抵抗素子
26と磁気ヨーク膜27を形成する。その上を保護膜2
8で被覆する。尚、29a、29bは導電膜24の開口
端子であり、30a、30bは強磁性磁気抵抗素子26
の開口端子である。
Note that the present invention is not limited to the above embodiment, but can be applied to the fourth embodiment.
As shown in FIG. 5 and FIG. 5 (cross section B-8 in FIG. 4), a ferromagnetic magnetoresistive element 26 may be placed above the conductive film 24 through which the current to be measured flows. That is, the magnetic yoke film 22 is deposited on the insulating substrate 21 and patterned. After forming an insulating film 23 thereon, a conductive film 24 through which a current to be measured flows is formed on the insulating film 23, and covered with an insulating film 25. Thereafter, unnecessary portions of the insulating film 25 are removed, and a ferromagnetic magnetoresistive element 26 and a magnetic yoke film 27 are formed. Protective film 2 on top of it
8. Note that 29a and 29b are open terminals of the conductive film 24, and 30a and 30b are ferromagnetic magnetoresistive elements 26.
This is an open terminal.

又、上記実施例では、強磁性磁気抵抗素子を使用したが
、半導体磁気抵抗素子を使用してもJ:い。
Further, in the above embodiment, a ferromagnetic magnetoresistive element was used, but a semiconductor magnetoresistive element may also be used.

[発明の効果] 以上詳述したようにこの発明によれば、小型で、高粘度
な電流検出器を提供することができる優れた効果を発揮
する。
[Effects of the Invention] As described in detail above, the present invention exhibits the excellent effect of being able to provide a small-sized, high-viscosity current detector.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は実施例の電流検出器の断面図、第2図は電流検
出器の平面図、第3図は電流検出器を組込んだ電流リミ
ッタの回路図、第4図は別例の電流検出器の平面図、第
5図は第4図のB−B断面図c′ある。 1は絶縁基板、2は強磁・11磁気抵抗ふ子、3はv1
i気ヨーク膜、4は絶縁膜、5は導電膜、7は磁気ヨー
ク膜。
Figure 1 is a cross-sectional view of the current detector of the embodiment, Figure 2 is a plan view of the current detector, Figure 3 is a circuit diagram of a current limiter incorporating the current detector, and Figure 4 is a current detector of another example. A plan view of the detector, FIG. 5, is a sectional view c' taken along line B--B in FIG. 4. 1 is an insulating board, 2 is a ferromagnetic/11 magnetoresistive foot, 3 is v1
4 is an insulating film, 5 is a conductive film, and 7 is a magnetic yoke film.

Claims (1)

【特許請求の範囲】 1、被測定電流が流れる薄膜の導電膜と、 前記導電膜の電流印加方向の回りを囲むように配設され
、閉磁気回路を形成するための薄膜の磁気ヨーク膜と、 前記磁気ヨーク膜により形成された閉磁気回路の一部に
、前記導電膜と絶縁された状態で配設される薄膜の磁気
抵抗素子と、 を絶縁基板上に配設したことを特徴とする電流検出器。
[Claims] 1. A thin conductive film through which a current to be measured flows; and a thin magnetic yoke film disposed to surround the conductive film in the current application direction to form a closed magnetic circuit. , a thin film magnetoresistive element disposed in a state insulated from the conductive film in a part of the closed magnetic circuit formed by the magnetic yoke film, and disposed on an insulating substrate. Current detector.
JP63245784A 1988-09-29 1988-09-29 Current detector Pending JPH0293373A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63245784A JPH0293373A (en) 1988-09-29 1988-09-29 Current detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63245784A JPH0293373A (en) 1988-09-29 1988-09-29 Current detector

Publications (1)

Publication Number Publication Date
JPH0293373A true JPH0293373A (en) 1990-04-04

Family

ID=17138778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63245784A Pending JPH0293373A (en) 1988-09-29 1988-09-29 Current detector

Country Status (1)

Country Link
JP (1) JPH0293373A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04148868A (en) * 1990-10-12 1992-05-21 Murata Mfg Co Ltd Current signal detection device
WO2000010172A3 (en) * 1998-08-12 2000-06-08 Siemens Ag Storage cell array and corresponding production method
EP1035549A1 (en) * 1998-09-30 2000-09-13 Nhk Spring Co.Ltd. Cipher machine
EP0776011B1 (en) * 1995-11-24 2003-02-19 Motorola, Inc. Magnetic memory and method therefor
JP2004265905A (en) * 2003-01-24 2004-09-24 Tdk Corp Magnetic memory cell, magnetic memory device, and its manufacturing method
JP2004303837A (en) * 2003-03-28 2004-10-28 Tdk Corp Magnetic storage cell, magnetic memory device, and its manufacturing method
JP2004356153A (en) * 2003-05-27 2004-12-16 Tdk Corp Magnetoresistive effect element, magnetic memory device, and method of manufacturing the same
EP1528569A2 (en) 2003-10-21 2005-05-04 TDK Corporation Magnetoresistive element, magnetic memory cell, and magnetic memory device
EP1635356A1 (en) * 2004-09-10 2006-03-15 TDK Corporation Magnetic memory with magnetic yoke

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04148868A (en) * 1990-10-12 1992-05-21 Murata Mfg Co Ltd Current signal detection device
EP0776011B1 (en) * 1995-11-24 2003-02-19 Motorola, Inc. Magnetic memory and method therefor
WO2000010172A3 (en) * 1998-08-12 2000-06-08 Siemens Ag Storage cell array and corresponding production method
USRE39799E1 (en) * 1998-08-12 2007-08-28 Infineon Technologies Ag Memory cell array and method for manufacturing it
JP2002522915A (en) * 1998-08-12 2002-07-23 インフィネオン テクノロジース アクチエンゲゼルシャフト Memory cell device and method of manufacturing the memory cell device
US6510078B2 (en) 1998-08-12 2003-01-21 Siemens Aktiengesellschaft Memory cell array and method for manufacturing it
EP1035549A4 (en) * 1998-09-30 2001-09-12 Nhk Spring Co Ltd Cipher machine
EP1035549A1 (en) * 1998-09-30 2000-09-13 Nhk Spring Co.Ltd. Cipher machine
JP2004265905A (en) * 2003-01-24 2004-09-24 Tdk Corp Magnetic memory cell, magnetic memory device, and its manufacturing method
JP2004303837A (en) * 2003-03-28 2004-10-28 Tdk Corp Magnetic storage cell, magnetic memory device, and its manufacturing method
JP2004356153A (en) * 2003-05-27 2004-12-16 Tdk Corp Magnetoresistive effect element, magnetic memory device, and method of manufacturing the same
EP1528569A2 (en) 2003-10-21 2005-05-04 TDK Corporation Magnetoresistive element, magnetic memory cell, and magnetic memory device
EP1528569A3 (en) * 2003-10-21 2005-11-09 TDK Corporation Magnetoresistive element, magnetic memory cell, and magnetic memory device
US7002840B2 (en) 2003-10-21 2006-02-21 Tdk Corporation Magnetoresistive element including a yoke that surrounds a conductor, magnetic memory cell and magnetic memory device including the same
EP1635356A1 (en) * 2004-09-10 2006-03-15 TDK Corporation Magnetic memory with magnetic yoke

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