JPS6236383B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an alignment device incorporated into an electron beam exposure apparatus or the like.

[Prior Art] In a certain type of electron beam apparatus that performs electron beam exposure, etc., the cross section of the electron beam that irradiates a sample coated with an exposure material is formed into a desired shape, such as a rectangle.
In order to form this arbitrary shape, as shown in Figure 1a, the electron beam flux emitted from the electron beam source (usually a crossover image formed by an electron gun, etc.) _C0 is focused on the sample S. In many cases, an apparatus is used in which an aperture plate A having an electron beam passage hole having a desired shape is arranged in an electron optical system composed of electron lenses 1 and 2. In such a device, the electron beam (hereinafter simply referred to as the "center line of the electron beam" and indicated by a chain line) has the highest intensity among the electron beam fluxes emitted from the electron beam source _C0 .
Under the condition in which the optical axis coincides with the chain line (optical axis) L connecting the lens centers of the electron lenses 1 and 2, a sharp beam is created on the sample by adjusting the excitation of the first electron lens 2 and the second electron lens 1. It is possible to form an electron beam image of the aperture plate A, to maximize the sample irradiation current value, and to maximize the uniformity (or symmetry) of the electron beam intensity distribution in the electron beam image.

The optical system of FIG. 1a shows the electron beam path in an ideal state in which the center line of the electron beam and the optical axis L coincide. In this optical system, a part of the electron beam (indicated by the solid line) that is not the center line of the electron beam flux diverged from the electron beam source C ₀ is transmitted to the electron lens 1.
The opening edge of the opening plate A provided between and 2
After passing through A ₁ , it then passes through the center of the electron lens 2 , and thus through the aperture center C ₂₀ of the lens diaphragm plate 4 , like all other electron beams emanating from the electron beam source C ₀ . That is, the intensity of the electron lens 1 is the same as that of the electron beam source.
The image of C ₀ is located on the main surface of the electronic lens 2 (lens aperture plate 4
The aperture plane) is adjusted so that the image is focused on C ₂₀ .
In such a state, the brightness of the electron beam image formed on the sample is at its maximum, and the uniformity of the intensity distribution is also at its maximum. Note that the electron beam scattered at the edge portion _A1 takes a path as shown in the figure and contributes to the formation of an image _A2 .

Figure 1a shows an electron beam image C ₀ in an optical system in which an aperture plate A is placed between two electron lenses 1 and 2.
Figures 1b and 1c respectively show a state in which the center line of the electron beam from the aperture plate A coincides with the optical axis, that is, an ideal electron beam path with the axes aligned.
shows the electron beam path in an ideal state where the axes of different optical systems arranged between the electron beam source C ₀ and the electron lens 1 and at the main surface of the electron lens 1 are aligned. .

However, if the position or inclination of the electron beam source C ₀ changes due to, for example, replacing the filament cathode of the electron gun used to form the electron beam source, (a) the position of the electron beam source of the electron beam source changes; is not on the optical axis L, and therefore the center line of the electron beam emitted from the electron beam source also does not coincide with the optical axis.

(b) The position of the electron beam source is on the optical axis L, but the center line of the electron beam emitted from the electron beam source does not coincide with the optical axis and is tilted.

This situation is usually referred to as the electron beam being misaligned. If the axes are not aligned like this, the uniformity of the electron beam intensity distribution of the electron beam image formed on the sample S may become insufficient, or the brightness of the electron beam image may decrease, as described below. I do things.

Figure 2a shows an example of the state (a) above.The electron beam path in the optical system shown in the figure is such that the position of the electron beam source is shifted from _C0 to _C01 , and
The center line 5a of the electron beam diverging from C ₀₁ is not parallel to the optical axis L. In this way, the center line 5a of the electron beam that should pass through the center _A0 of the aperture plate A is
When the electron beam passes through point A ₀₁ of the aperture, the cross-sectional intensity distribution of the electron beam passing through the aperture plate A is no longer symmetrical with respect to the center of the aperture. In this state, the electron beam intensity distribution along a straight line passing through the center _A0 on the aperture plate A is represented by curves B1 and B2 in FIG. 3a. Curve B1 indicates that the electron beam is on the aperture plate A.
The curve _B2 is for the case where the electron beam passes through the center _A01 of the aperture plate A. The degree of deviation from the horizontal line at the top of these curves represents the non-uniformity of the electron beam intensity distribution passing through the aperture plate A. however,
The change in the electron beam intensity distribution passing through the aperture plate A is
It is insignificant. This is because generally the aperture plate A
If the ratio of the solid angle looking into the electron beam source from the aperture and the total emission angle from the electron beam source is about 1/10, then the electron beam intensity ratio at the edge near the aperture center A ₀ and A ₀₁ is 0.98. This is because it is possible to reduce the amount to a certain extent. This means that the length of one side of the opening of the aperture plate A is extremely short compared to the half width of the curve B1 and the curve B2. In addition, in order to increase the brightness of the electron beam image on the sample, an electron lens 2
The fact that the aperture plate A is normally used as a reduction system for the aperture of the aperture plate A greatly reduces the influence of non-uniformity of the electron beam intensity distribution on the aperture plate A on the brightness of the entire electron beam image on the sample S. This is a factor in making it smaller.

Next, the electron beam intensity distribution along a straight line passing through the aperture center _C20 of the aperture plate 4 in the state shown in FIG. 2a is represented by curves D1 and D2 in FIG. 3b. curve D
Curve 1 is for the case where the electron beam passes through the center _C20 of the aperture plate 4, and curve D2 is for the case where the electron beam is outside the center of the aperture plate 4.
This is for when passing through C ₂₁ . The degree of deviation from the horizontal line at the top of these curves represents the non-uniformity of the electron beam intensity distribution passing through the aperture plate 4. In this figure, curve B1 and curve B2
It can be seen that the half width of the curve B and the diameter length of the aperture of the aperture plate 4 are approximately equal.
1 to curve B2, it means that the intensity of the entire electron beam passing through the aperture plate 4 changes significantly. From the comparison between Figures 3a and 3b, we can see that the main reason for the decrease in the brightness of the electron beam image on sample S is that the image of the electron beam source is not focused on C ₂₀ on the optical axis. I understand that this is caused by something.

As is clear from the above discussion, the intensity distribution of the electron beam image of the aperture plate A on the sample S is similar to the electron beam intensity distribution of the aperture plate A, as shown in FIG. 2b. FIG. 2b shows the electron beam intensity distribution using contour lines, and the contour lines are represented by concentric solid lines centered at point P, where the center line of the electron beam intersects with the sample S. FIG. 2c is a graph showing the electron beam intensity distribution with the line connecting point P and optical axis L in FIG. 2b as the horizontal axis.

FIG. 4 shows an example of the state (b) above.
In the optical system of FIG. 1a, the center line 5b of the electron beam emitted from the electron beam source C ₂₀ does not coincide with the optical axis L. In this state, the electron beam source
Since C ₂₀ is on the optical axis, the center line of the electron beam always passes through the center C ₂₀ of the electron lens 2, and the brightness of the electron beam image formed on the sample S is almost set to the maximum value. Ru. However, since the center line 5b of the electron beam passes through point _A02 , which is not the center _A0 of the aperture of the aperture plate A, the uniformity of the electron beam intensity distribution of the electron beam image formed on the sample S is uneven. It will be enough.

In conventional alignment operations aimed at eliminating the misaligned axes described above, a means is provided to monitor the brightness and uniformity of the intensity distribution of the electron beam image on the sample. Adjusting the amount of the deflection signal from the deflection power source supplied to the two-stage deflectors 3a and 3b constituted by a plurality of electromagnetic coils provided between the electron beam source and the aperture plate A while monitoring the output of the means. This is to align the center line of the electron beam source with the optical axis L.
However, with conventional deflection power supplies, it is not possible to independently adjust the brightness and uniformity of the intensity distribution of the electron beam focused on the sample, and accurate alignment requires skill and time. This was a difficult operation that required a lot of work time. An example of such an operation will be described below.

Figure 5a shows the state shown in Figure 2a, when the brightness of the electron beam image formed on the sample is monitored by the method described later, and the brightness of the electron beam image is maximized. This shows an example in which the center line of the electron beam is deflected from 5a to 5c by adjusting the output of a conventional deflection power supply. As is clear from this figure, when the center line 5c of the electron beam passes through the center _C20 of the electron lens 2, the brightness of the electron beam image becomes maximum, but the center line of the electron beam passes through the aperture plate A. It can be seen that the position where the electron beam passes through the opening moves to position A ₀₃ , which is also far from the center, and the uniformity of the intensity distribution of the electron beam image formed on the sample is not improved.

Figure 5b shows that the uniformity of the intensity distribution of the electron beam image formed on the sample is monitored by the method described below from the state shown in Figure 2a, and the uniformity is determined to be the best. This figure shows an example in which the center line of the electron beam is deflected as shown in 5d by adjusting the output of a conventional deflection power supply. As is clear from this figure, since the center line 5d of the electron beam now passes through the center _A0 of the aperture of the aperture plate A, the uniformity of the intensity distribution of the electron beam image formed on the sample is optimal. Although the brightness of the electron beam image has been adjusted to the maximum value, the brightness of the electron beam image is not set to the maximum value because the center line of the electron beam still passes through the position _C22 , which is far from the center C20 of the electron lens ₂ . I understand.

Figure 5c shows how to monitor the uniformity of the intensity distribution of the electron beam image formed on the sample from the state shown in Figure 4, and use a conventional deflection power source to obtain the best uniformity. This shows an example in which the center line of the electron beam is deflected as shown by 5e by output adjustment.
As is clear from this figure, by adjusting the deflection, the center line 5e of the electron beam is aligned with the center A ₀ of the aperture of the aperture plate A.
As a result, the uniformity of the intensity distribution of the electron beam focused on the sample has been adjusted to the optimum state, but the center line of the electron beam is at a position C 20 far from the center C ₂₀ of the electron lens 2. It can be seen that the brightness of the electron beam image has deviated from its optimum condition as the electron beam now passes through ₂₃ .

The above examples show how difficult it is to simultaneously optimize both the intensity and the uniformity of the intensity distribution of the electron beam image formed on the sample using conventional deflection devices. .

[Problems to be Solved by the Invention] In order to solve these drawbacks, the present invention provides an axis alignment system that can independently vary only the brightness or only the intensity distribution of the electron beam image formed on the sample. The purpose is to provide a device.

[Means for Solving the Problems] The apparatus of the present invention for achieving the above-mentioned object includes an electron gun that generates an electron beam that irradiates a sample;
an aperture plate having an electron beam passage aperture that determines the cross-sectional shape of the electron beam on the sample; a first electron lens for forming an electron beam image of the aperture plate on the sample; a second electron lens for forming a crossover image of the electron gun on the main surface of the lens; an intensity detection means for detecting the intensity of the electron beam at the sample surface position; and an electron beam image at the sample surface position. In the apparatus, the apparatus includes an intensity distribution detection means for detecting the uniformity of the cross-sectional intensity distribution of the electron beam, and an electron beam deflection device having two stages of deflectors. placed between
One of the two sets of deflection power supplies that are adjusted independently of each other supplies a deflection signal for deflecting the electron beam to the two-stage deflector with a deflection fulcrum for the electron beam fixed on the aperture plate, Another deflection power source is configured to supply a deflection signal for deflecting the electron beam to the two-stage deflector while fixing a deflection fulcrum for the electron beam on the main surface of the first electron lens. It is characterized by:

[Example] First, in the optical system shown in Fig. 1a, an electron beam source is
The above-mentioned state (a) where C ₀ is not on the optical axis L, that is, the second
A case will be described in which axis alignment is performed using the apparatus of the present invention from the state shown in FIG.

According to the present invention, it is possible to independently adjust the brightness of the electron beam image and the uniformity of the intensity distribution of the electron beam image.
A deflection adjustment method for maximizing only the brightness of an electron beam image while keeping the uniformity of the intensity distribution of the electron beam image constant will be described with reference to FIG. 6a. In order to make such adjustments, a deflection power source for brightness adjustment, which is one of the deflection power sources described later, is used, and by operating this deflection power source, the electron beam source C ₀₁
The electron beam is deflected so as not to change the position A ₀₁ at which the center line 5a of the electron beam emanating from the opening passes through the opening. In order to perform such deflection, it is necessary to fix the deflection fulcrum of the two-stage deflector on the surface of the aperture plate A. With the deflection power source that satisfies these deflection conditions in operation, the electron beam intensity on the sample is monitored and the deflection of the electron beam is adjusted, and the center line of the electron beam is aligned with the second electron as shown in 6. If the path is corrected to pass through the center _C20 of the lens 2, axis alignment for maximizing the brightness of the electron beam image can be easily performed. When this axis alignment is completed, the electron beam image on the sample S is expressed as shown in Fig. 6b using the same method as in Fig. 2b, and the electron beam intensity distribution is as shown in Fig. 2c. When expressed using a similar method, it becomes as shown in FIG. 6c. 6th
The contour line distribution in Figure b is almost the same as the contour line distribution in Figure 2 b, but the intensity distribution curve in Figure 6 c has a higher overall intensity level compared to the intensity distribution curve in Figure 2 c. change into something.

Next, from the state shown in Figure 2a, the axis alignment operation is performed to make the electron beam intensity distribution in the image symmetrical about the center while keeping the intensity of the entire electron beam image constant, using Figure 7a. I will explain. In order to perform such adjustment, a deflection power source for intensity distribution adjustment, which is one of the deflection power sources described later, is used, and by operating this deflection power source, the electrons emitted from the electron beam source C ₀₁ are The electron beam is deflected so that the position C ₂₁ where the center line 5a of the line passes over the main surface of the electron lens 2 does not change. In order to perform such deflection, it is necessary to fix the deflection fulcrum of the two-stage deflector on the main surface of the electron lens 2. With a deflection power source that satisfies these deflection conditions in operation, the intensity distribution of the electron beam image on the sample is monitored and the deflection of the electron beam is adjusted so that the intensity distribution is symmetrical, and the center of the electron beam is adjusted. As shown in line 7,
If the path is corrected to pass through the center A ₀ of the aperture plate A, alignment for improving the uniformity of the intensity distribution of the electron beam image can be easily performed. When this alignment is completed, the electron beam on the sample S can be expressed in the same way as in Fig. 2b, as shown in Fig. 7b, and the electron beam intensity distribution can be expressed in the same way as in Fig. 2c. 7th
It will look like Figure c. The contour line distribution in Figure 7b is the second
Compared to the contour line distribution in Figure b, the position of the maximum intensity has moved to the center of the rectangular electron beam image, and the intensity distribution curve in Figure 7 c also shows the overall intensity compared to the intensity distribution curve in Figure 2 c. Although the level does not change, the maximum value of the curve is in the center.

The two adjustment methods according to the present invention described above are:
In either case, only the uniformity of the intensity distribution or the intensity can be adjusted independently without changing the intensity or the uniformity of the intensity distribution of the electron beam image, so by sequentially performing these two adjustments in an arbitrary order, the From the path of the electron beam shown in Fig. 2a, it passes through the state shown in Fig. 6a or Fig. 7a, and finally reaches the state shown in Fig. 8a.
It becomes possible to easily set the electron beam path as shown in FIG. The electron beam path 5f in FIG. 8a shows the path of the center line of the electron beam in a perfectly aligned state. The electron beam intensity distribution in this state is expressed in the same way as in Figure 2a, as shown in Figure 8b, and the electron beam intensity distribution along the center line is expressed in the same way as in Figure 2c. When expressed as , it becomes as shown in Fig. 8c. In the contour line distribution in Figure 8b, the position of maximum intensity has moved to the center of the rectangular electron beam image compared to the contour line distribution in Figure 2b, and in Figure 8c
Compared to the intensity distribution curve of FIG. 2c, the intensity distribution curve of FIG. 2 also has a higher overall intensity level and the maximum value of the curve is centered.

Next, in the optical system of FIG. 1a, the electron beam source is on the optical axis L, but the center line of the electron beam is not aligned with the optical axis. A method for performing axis alignment using the apparatus of the present invention from the state shown in FIG. 9 will be described with reference to FIG. 9a. In order to perform such adjustment, a deflection power source for intensity distribution adjustment, which is one of the deflection power sources described above, is used, and by operating this deflection power source, the electrons emitted from the electron beam source C ₂₀ are The electron beam is deflected so that the position C ₂₀ where the center line 5b of the line passes over the main surface of the electron lens 2 does not change. With a deflection power source that satisfies these deflection conditions in operation, the intensity distribution of the electron beam image on the sample is monitored and the deflection of the electron beam is adjusted so that the intensity distribution is symmetrical, and the center of the electron beam is adjusted. If the line is corrected to a path passing through the center A ₀ of the aperture plate A, as shown in 5g, axis alignment for improving the uniformity of the intensity distribution of the electron beam image can be easily performed. When such alignment is completed, the electron beam image on the sample S is expressed in the same manner as in FIG. 2b, as shown in FIG. 8b, and the electron beam intensity distribution is expressed in the same manner as in FIG. 2c. If expressed as Figure 8 c
become that way.

In addition, since it is generally not known whether the state is in (a) or (b) above, the axis alignment operation using two deflection power supplies assumes that it is in state (a). However, even if the actual device was in the state (b), the operation to maximize the strength described above would be wasteful or just a confirmation operation, and the result would be In this case, the ideal alignment operation is performed by the above-described intensity distribution adjustment operation.

Now, a specific device for independently performing the above-described axis alignment for brightness (intensity) adjustment and axis alignment for electron beam intensity distribution adjustment will be explained based on FIG. 10. In the figure, 3a and 3b indicate the first and second stage deflectors using electromagnetic coils, respectively,
Excitation current is supplied to each coil via current adding circuits 8 and 9. The outputs of a deflection power source 10 for adjusting brightness and a deflection power source 11 for adjusting intensity distribution are added to each current adding circuit 8, 9, respectively.
The power supply 10 is configured to change the output currents of the current power supplies 14 and 15 at a constant rate based on a voltage signal that changes by operating a potentiometer 13 connected to a DC power supply 12, and each output The current ratio can be set arbitrarily by adjusting the potentiometer 16. This means that the electron beam can be deflected about any deflection fulcrum while keeping the ratio of the angles of the electron beam deflected by the first-stage and second-stage deflection coils constant. Therefore, in order to use the power source 10 exclusively for alignment for brightness adjustment, the potentiometer 16 may be adjusted to align the deflection fulcrum with the surface of the aperture plate A, as described above. Similarly, the power supply 11 includes current power supplies 19 and 20 controlled by a potentiometer 18 connected to a DC voltage power supply 17 and a potentiometer 21 that varies the output intensity ratio of the current power supplies 19 and 20. The potentiometer 21 is adjusted so that the deflection fulcrum coincides with the main surface of the first electron lens 2 in order to use it for adjusting the intensity distribution.

Using the deflection power supply shown in FIG. 10, adjust the potentiometer 13 while monitoring the intensity of the electron beam image at the sample position as described above, and adjust the potentiometer 18 while monitoring the intensity distribution of the electron beam image. By doing so, ideal alignment can be achieved.

The alignment method of the present invention described above is explained using the simplest device, and the actual device may be equipped with a more complicated mechanism or modified; It is also possible to apply the present invention to. For example, even if the installation position of the aperture plate A is as shown in FIG. By providing the means, it is possible to control only the intensity distribution of the electron beam image formed on the sample. Further, an electron lens for forming an image of the aperture plate A on the sample is attached to the first
When the configuration is made up of multiple electron lens groups instead of a single one as shown in the figure, the sample can be deflected by providing a means for deflection with the deflection fulcrum of the deflection device fixed on the main lens surface of the composite lens. It is possible to vary only the intensity of the electron beam image formed thereon. Alternatively, in the embodiment device shown in FIG. 10 as a deflection power source for a two-stage deflector, the outputs of the deflection power sources 10 and 11 that maintain the different deflection fulcrums constant are added to the deflection coils of each stage by using an adding circuit. 3
The same effect can be obtained by using two sets of deflection coils that are excited only by the output of each deflection power source. Further, a type of deflection device using an electrostatic deflection electrode and a deflection power source may be used instead of the deflection coil.

In the present invention, it is necessary to detect the intensity of the entire electron beam image formed on the sample surface position and the electron beam intensity distribution in the image, but the method for doing so is related to the apparatus of the embodiment described below. I will explain.

FIG. 11 is a schematic diagram showing an embodiment of the apparatus for automatically performing axis alignment of the present invention. In the figure,
The same reference numerals as in FIG. 10 represent the same components. The excitation power supplies 10' and 11' of the deflection device perform substantially the same operation as the excitation power supply shown in FIG. 10, but are constructed so that they can also be controlled by external electrical signals. Further, switching between manual and automatic operation of the power supply is controlled by a signal from the central control circuit 22. In FIG. 11, an electron beam detection device 23 is set at the sample position in place of the sample, and the detection device consists of gold wires 24 orthogonal to each other and an aperture provided below the gold wires 24 shown in FIG. 25, and an electron beam detection element 26 such as a phototransistor. When detecting the intensity of the electron beam, it is sufficient to measure the output of the detection element 26 in a state where the cross section 27 of the electron beam does not irradiate the wire 24, as shown in FIG. Also,
In order to measure the intensity distribution of the electron beam in the electron beam cross section 27, the electrostatic deflection electrode 27 and its deflection power source 28 sequentially scan in two directions X and Y to irradiate the gold wire 24. At this time, information regarding the intensity distribution can be obtained from observation of the output signal waveform generated at the detection element 26. Scanning for this purpose is performed based on a pulse signal (13a) having a frequency obtained by lowering the frequency of the clock pulse generator 29 by a multiplier 30, and the scanning signal output waveform of the deflection power supply 28 is as shown in FIG. 13b. . During the rest period of the scanning signal waveform, the electron beam is set not to irradiate the wire, so the output signal waveform of the detection element 26 (FIG. 13c) during this period contains information regarding the electron beam intensity distribution. Since the waveform and the differential waveform are displayed on the waveform display means 34, the state of the electron beam intensity distribution can be determined from observation of the display means. Therefore, while observing the intensity display means 31, the deflection power source 11'
Also, by manually adjusting the deflection power source 10' while observing the waveform display means 34, accurate axis alignment can be easily performed.

Reference numerals 35 and 36 in FIG. 11 represent an intensity control circuit and a distribution control circuit, respectively, for automatic alignment, which are provided with means for converting uniformity regarding electron beam intensity or electron beam intensity distribution into numerical values. the control circuit 35,
36 is a means for changing the control signal to the deflection power supplies 10' and 11' by a fixed amount for each scan, which is operated alternately by the output pulses of the multiplier 30, and a means for detecting the intensity or uniformity of distribution during each scan. means for comparing the detected value with the detected value stored in the previous scan, and when the detected signal reaches the maximum (or minimum),
The control signal to the deflection power supplies 10' and 11' is kept constant. Therefore, the intensity control circuit 35 is controlled by the control signal from the central control circuit 22.
and by operating the distribution control circuit 36,
Fully automated alignment can be performed.

In the above-described embodiments, only the positional direction (X) in the plane perpendicular to the optical axis L was explained, but in the actual device, axis alignment is also performed in the Y direction orthogonal to the X direction. It goes without saying that this needs to be done.

[Effects of the Invention] As explained above, according to the present invention, it is possible to extremely easily perform accurate electron beam axis alignment when forming an electron beam having an arbitrary cross-sectional shape using an electron beam device. .

[Brief explanation of the drawing]

Fig. 1 is a schematic diagram of an electron optical system used to form an electron beam having an arbitrary cross-sectional shape, Figs. 2 to 4 are schematic diagrams for explaining a state in which the axes are not aligned, and Figs. FIG. 9 is a schematic diagram for explaining the alignment method according to the present invention, FIG. 10, and FIG.
Each figure is a schematic diagram showing an embodiment of the present invention;
This figure and FIG. 13 are schematic diagrams for explaining the operation of the apparatus shown in FIG. 11. 1...Second lens, 2...First lens, 3a,
3b... Deflector, 4... Lens aperture, 8, 9...
Addition circuit, 10, 10', 11', 11'...Deflection power supply, 24...Gold wire, 28...Deflection voltage power supply, 29...Clock pulse generator, 30...
Multiplier, 31... Electron beam intensity display means, 32, 3
3...Differentiating circuit, 34...Waveform display means, 35...
...Intensity control circuit, 36...Distribution control circuit.

Claims (1)

[Claims] 1. An electron gun that generates an electron beam that irradiates a sample;
an aperture plate having an electron beam passage hole that determines the cross-sectional shape of the electron beam on the sample; a first electron lens for forming an electron beam image of the aperture plate on the sample; a second electron lens for forming a crossover image of the electron gun on the main surface of the lens; an intensity detection means for detecting the intensity of the electron beam at the sample surface position; and an electron beam image at the sample surface position. In the apparatus, the apparatus includes an intensity distribution detection means for detecting the uniformity of the cross-sectional intensity distribution of the electron beam, and an electron beam deflection device having two stages of deflectors. placed between
One of the two sets of deflection power supplies that are adjusted independently of each other supplies a deflection signal for deflecting the electron beam to the two-stage deflector with a deflection fulcrum for the electron beam fixed on the aperture plate, Another deflection power supply is configured to supply a deflection signal for deflecting the electron beam to the two-stage deflector with a deflection fulcrum for the electron beam fixed on the main surface of the first electron lens. An axis alignment device for an electron beam device characterized by: 2. An electron gun that generates an electron beam that irradiates the sample;
an aperture plate having an electron beam passage hole that determines the cross-sectional shape of the electron beam on the sample; a first electron lens for forming an electron beam image of the aperture plate on the sample; a second electron lens for forming a crossover image of the electron gun on the main surface of the lens; an intensity detection means for detecting the intensity of the electron beam at the sample surface position; and an electron beam image at the sample surface position. In the apparatus, the apparatus includes an intensity distribution detection means for detecting the uniformity of the cross-sectional intensity distribution of the electron beam, and an electron beam deflection device having two stages of deflectors. placed between
One of the two sets of deflection power supplies that are adjusted independently of each other supplies a deflection signal for deflecting the electron beam to the two-stage deflector with a deflection fulcrum for the electron beam fixed on the aperture plate, Another deflection power supply is configured to supply a deflection signal for deflecting the electron beam to the two-stage deflector with a deflection fulcrum for the electron beam fixed on the main surface of the first electron lens, The outputs of the intensity detecting means and the intensity distribution detecting means are monitored by supplying control signals that sequentially change the outputs of these two sets of deflection power supplies, and the outputs of the two sets of deflection power supplies are adjusted to a state where the values thereof indicate the maximum value or the minimum value. 1. An axis alignment device for an electron beam apparatus, characterized in that it is provided with a control means for setting the output of a deflection power source.