JPH01186743A - Electric field emission type scanning electron microscope - Google Patents

Electric field emission type scanning electron microscope

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Publication number
JPH01186743A
JPH01186743A JP638188A JP638188A JPH01186743A JP H01186743 A JPH01186743 A JP H01186743A JP 638188 A JP638188 A JP 638188A JP 638188 A JP638188 A JP 638188A JP H01186743 A JPH01186743 A JP H01186743A
Authority
JP
Japan
Prior art keywords
electron beam
signal
field emission
sample
emission type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP638188A
Other languages
Japanese (ja)
Inventor
Yukihiko Okada
岡田 行彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd filed Critical Jeol Ltd
Priority to JP638188A priority Critical patent/JPH01186743A/en
Publication of JPH01186743A publication Critical patent/JPH01186743A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To make it possible to obtain a clear sample image in which the intensity variation of the primary electron beam is canceled by deflecting the primary electron beam radiated on the sample during the retrace period into a correcting signal, and detecting the signal. CONSTITUTION:When a switch 14 is opened or closed synchronously to the retrace signal, a voltage is applied to a deflector 13 from a DC power source 15 synchronously to the signal, the primary electron beam 2 is deflected out of the optical axis, and the intensity of the electron beam is detected by an electron beam detector 16. The detected signal is fed to a division circuit 8 together with an image signal of a sample 5 detected by the secondary electron detector 9. The signal is operated by the division circuit 8, fed to a cathode-ray tube 11, and displayed as a sample image. In such a way, a clear sample image in which the intensity variation of the primary electron beam 2 is almost all canceled can be displayed regardless of the variation of the emission pattern.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は電界放射型走査電子顕微鏡において、特に電界
放射型電子銃よりの電子線の変動を補正して鮮明な試料
像を得るようにした装置に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention is a field emission scanning electron microscope, in particular, which corrects fluctuations in the electron beam from a field emission electron gun to obtain a clear sample image. Regarding equipment.

[従来技術] 電界放射型電子銃(以下FEGと略す)を搭載した走査
電子顕微鏡では、FEGから放射される電子線強度、即
ち、全放射電流は時間と共に変化するので、第4図に示
すように構成して電子線強度の変化に伴う試料像への影
響を防止している。
[Prior Art] In a scanning electron microscope equipped with a field emission electron gun (hereinafter abbreviated as FEG), the intensity of the electron beam emitted from the FEG, that is, the total emission current changes with time, so as shown in Fig. 4. This structure prevents the sample image from being affected by changes in electron beam intensity.

第4図において、1はFEGで、該FEGより放射され
る1次電子線2は収束レンズ3によって細く集束される
と共に偏向コイル4によって試料5上を2次元的に走査
する。6はFEGIと試料5の間の電子線通路(光軸上
)に配置された第5図に示すような絞り状に形成された
電子線通過孔6aを有する電子線検出器で、該電子線検
出器6によって試料5に照射される1次電子線2の極く
周辺部の電子線2aが検出される。この検出信号は、電
流増幅器7を介してプローブ電流信号Pとして割算回路
8に送られる。一方、1次電子線2の試料5への照射に
伴う例えば2次電子eは、2次電子検出器9によって検
出され増幅器10によって増幅された後、映像信号Sと
して前記割算回路8に送られる。ここで、プローブ電流
信号強度Pが、試料5に照射される1次電子線2の強度
に経時的に同じ比例定数で比例しているものとすれば、
雨検出器よりの信号を割算回路8に入力して比(S/P
)を求め、この信号を走査信号発生回路12より走査信
号が供給される陰極線管11にこの比信号に基づいて像
を表示すれば、映像信号Sに含まれる1次電子線強度の
変化はキャンセルされて試料像上に現われない。
In FIG. 4, reference numeral 1 denotes an FEG, and a primary electron beam 2 emitted from the FEG is narrowly focused by a converging lens 3 and scanned two-dimensionally over a sample 5 by a deflection coil 4. Reference numeral 6 denotes an electron beam detector having an electron beam passage hole 6a formed in the shape of a diaphragm as shown in FIG. The detector 6 detects the electron beam 2a at the very periphery of the primary electron beam 2 irradiated onto the sample 5. This detection signal is sent to the divider circuit 8 via the current amplifier 7 as a probe current signal P. On the other hand, for example, secondary electrons e accompanying the irradiation of the sample 5 with the primary electron beam 2 are detected by the secondary electron detector 9 and amplified by the amplifier 10, and then sent to the dividing circuit 8 as a video signal S. It will be done. Here, if the probe current signal intensity P is proportional to the intensity of the primary electron beam 2 irradiated onto the sample 5 with the same proportionality constant over time, then
The signal from the rain detector is input to the divider circuit 8 and the ratio (S/P
) and displays this signal on the cathode ray tube 11 to which the scanning signal is supplied from the scanning signal generation circuit 12 based on this ratio signal, the change in the primary electron beam intensity included in the video signal S is canceled. and does not appear on the sample image.

[発明が解決しようとする問題点] ところでこの様に構成された装置では、電子線検出器6
で検出されるのは前述したように1次電子線2の周辺部
のみの電子線2aであり、電子線2aの強度変化をもっ
て、試料5に照射される中心部の電子線の強度変化に等
しいとしている。ところが、電界放射電子銃のエミッシ
ョンパターンが経時的に変化するため、実際には1次電
子線2の中心部と周辺部における電流量の比は経時的に
変化してしまう。そのため、正しく1次電子線の強度変
化(ノイズ)をキャンセルすることができず鮮明な試料
像を得ることができない。又、この様な装置では、電子
線検出器6の電子線通過孔6aを光軸上に正しく配置す
ることが必要であるが、電子線検出器6を光軸上に正し
く配置する作業は繁雑である。更に、1次電子線2の周
辺部のみのプローブ電流を検出するので、検出電流が微
弱であるためS/N比が悪く、このような信号では、1
次電子線の強度変化を高精度にキャンセルすることがで
きず鮮明な試料像を得ることができない。
[Problems to be solved by the invention] By the way, in the device configured in this way, the electron beam detector 6
As mentioned above, what is detected is the electron beam 2a only at the periphery of the primary electron beam 2, and the intensity change of the electron beam 2a is equal to the intensity change of the electron beam at the center irradiated onto the sample 5. It is said that However, since the emission pattern of the field emission electron gun changes over time, the ratio of the amount of current at the center and the periphery of the primary electron beam 2 actually changes over time. Therefore, it is not possible to correctly cancel the intensity change (noise) of the primary electron beam, and a clear sample image cannot be obtained. Further, in such a device, it is necessary to correctly arrange the electron beam passage hole 6a of the electron beam detector 6 on the optical axis, but the work to correctly arrange the electron beam detector 6 on the optical axis is complicated. It is. Furthermore, since the probe current is detected only in the periphery of the primary electron beam 2, the detection current is weak and the S/N ratio is poor.
It is not possible to cancel the intensity change of the second electron beam with high precision, and it is not possible to obtain a clear sample image.

本発明は、以上の点に鑑みなされたもので、1次電子線
強度の変化をキャンセルして鮮明な試料像が得られる電
界放射型走査電子顕微鏡微鏡を提供することを目的とし
いる。
The present invention has been made in view of the above points, and an object of the present invention is to provide a field emission type scanning electron microscope that can cancel changes in the primary electron beam intensity and obtain a clear sample image.

[問題点を解決するための手段] 本目的を達成するための本発明は、電子線を電界放射す
る電界放射型電子銃と、前記電子線により試料上を走査
して得られるその試料よりの情報を検出する情報検出手
段と、該電界放射型電子銃よりの電子線電流の変動を検
出するために走査信号の帰線期間中に光軸外へ前記電子
線を偏向するための偏向手段と、該偏向手段によって光
軸外に偏向された電子線の強度を検出するための電子線
検出手段と、該電子線検出手段によって検出された信号
を一時的に記憶するための記憶手段と、前記記憶手段よ
りの信号と前記情報検出手段よりの信号とに基づいて前
記電子線の変動による前記情報信号の変動を補正するた
めの手段とを備えたことを特徴としている。
[Means for Solving the Problems] The present invention for achieving the above object uses a field emission type electron gun that emits an electron beam in an electric field, and a field emission type electron gun that emits an electron beam in an electric field, and a method for scanning a sample with the electron beam. information detection means for detecting information; and deflection means for deflecting the electron beam off the optical axis during a retrace period of a scanning signal in order to detect fluctuations in the electron beam current from the field emission type electron gun. , an electron beam detection means for detecting the intensity of the electron beam deflected off the optical axis by the deflection means; a storage means for temporarily storing the signal detected by the electron beam detection means; The present invention is characterized by comprising means for correcting fluctuations in the information signal due to fluctuations in the electron beam based on the signal from the storage means and the signal from the information detection means.

[実施例] 以下本発明の実施例を図面を用いて詳述する。[Example] Embodiments of the present invention will be described in detail below with reference to the drawings.

第1図は本発明の一実施例の概略構成図であり、第4図
の従来装置と同一構成要素には同一番号が付されている
。第1図において、13はFEGIより放射された1次
電子線2を第2図(イ)に示す走査信号の帰線期間(t
l)中に光軸外へ偏向するための偏向器で、該偏向器1
3にはスイッチ14を介して直流電源15より偏向電圧
が印加される。又、前記スイッチ14には、走査信号発
生回路12より第2図(ロ)に示すような帰線期間に同
期したスイッチング信号が供給されているため、該スイ
ッチ14はこの帰線信号に同期してスイッチの開閉動作
を行なう。16は光軸外に配置された電子線検出器であ
り、前記スイッチ14が帰線信号に同期して開閉すると
、偏向器13には、この信号に同期して直流電源15よ
り電圧が印加される。そのため、1次電子線2は第1図
に点線で示すように光軸外に偏向され、この先軸外に偏
向された1次電子線2の電子線強度が電子線検出W16
によって検出される。この電子線検出13によって検出
された信号は、電流/電圧変換器と増幅回路より構成さ
れた増幅器17で増幅された後、サンプルアンドホール
ド回路18によって一定時間ホールドされてプローブ電
流信号P′として割算回路8に送られる。該割算回路8
には2次電子検出器9によって検出された試料5よりの
映像信号Sも供給されているため、該割算回路8によっ
て演算(S/P iされて陰極線管11に供給され試料
像として表示される。
FIG. 1 is a schematic configuration diagram of an embodiment of the present invention, and the same components as those of the conventional device shown in FIG. 4 are given the same numbers. In FIG. 1, reference numeral 13 indicates the primary electron beam 2 emitted from the FEGI during the retrace period (t) of the scanning signal shown in FIG.
l) a deflector for deflecting the optical axis off the optical axis, the deflector 1
3 is applied with a deflection voltage from a DC power supply 15 via a switch 14. Further, since the switch 14 is supplied with a switching signal synchronized with the retrace period as shown in FIG. 2 (b) from the scanning signal generation circuit 12, the switch 14 is synchronized with this retrace signal. to open and close the switch. 16 is an electron beam detector arranged off the optical axis, and when the switch 14 opens and closes in synchronization with the retrace signal, a voltage is applied to the deflector 13 from the DC power supply 15 in synchronization with this signal. Ru. Therefore, the primary electron beam 2 is deflected off the optical axis as shown by the dotted line in FIG.
detected by. The signal detected by the electron beam detector 13 is amplified by an amplifier 17 composed of a current/voltage converter and an amplifier circuit, and then held for a certain period of time by a sample-and-hold circuit 18 and divided as a probe current signal P'. The signal is sent to the calculation circuit 8. The division circuit 8
Since the image signal S from the sample 5 detected by the secondary electron detector 9 is also supplied to the image signal S, the image signal S is calculated by the dividing circuit 8 (S/P i) and is supplied to the cathode ray tube 11 and displayed as a sample image. be done.

ところで、この様に構成された装置では、試料5に照射
される1次電子線2の電子線強度が偏向器13によって
帰線期間だけ偏向されて前記電子線検出器16により検
出されるが、該電子線検出器16によって検出される1
次電子線2の電子線強度は、試料5に照射される1次電
子線2の電子線強度そのものであるため、映像信号Sは
プローブ電流信号P′に経時的に同じ比例定数で比例し
ていることとなる。従って、該割算回路8により信号を
陰極線管11に表示すれば、エミッシジンパターンの変
動にかかわらず1次電子線2の強度変化をほとんどキャ
ンセルした鮮明な試料像が表示される。又、従来装置の
様に試料5に照射される1次電子線2の極く周辺の電子
線のみを検出するのではなく、試料5に照射される1次
電子線2そのものを電子線強度モニター用として検出す
るようにしているため、この充分な強度の信号に基づい
て1次電子線変動に対する補正を高精度に行うことがで
きる。又、この様に構成された装置では、従来装置のよ
うに電子線検出器を光軸上に配置していないため、繁雑
な軸合せ等の作業を行なう必要はない。
By the way, in the apparatus configured in this way, the electron beam intensity of the primary electron beam 2 irradiated onto the sample 5 is deflected by the deflector 13 during the retrace period and detected by the electron beam detector 16. 1 detected by the electron beam detector 16
Since the electron beam intensity of the secondary electron beam 2 is the same as the electron beam intensity of the primary electron beam 2 irradiated onto the sample 5, the video signal S is proportional to the probe current signal P' with the same proportionality constant over time. There will be. Therefore, when the signal is displayed on the cathode ray tube 11 by the dividing circuit 8, a clear sample image is displayed in which the intensity change of the primary electron beam 2 is almost canceled out, regardless of the fluctuation of the emissidine pattern. In addition, instead of detecting only the electron beam in the very periphery of the primary electron beam 2 irradiated onto the sample 5 as in the conventional device, the electron beam intensity is monitored for the primary electron beam 2 itself irradiated onto the sample 5. Since the primary electron beam fluctuations are detected with high accuracy, correction for primary electron beam fluctuations can be performed with high precision based on this sufficiently strong signal. Furthermore, in the apparatus configured in this manner, unlike the conventional apparatus, the electron beam detector is not arranged on the optical axis, so there is no need to perform complicated operations such as alignment.

第3図は本発明の他の実施例を説明するための図である
。第1図の実施例装置では、偏向器13によって1次電
子線2を偏向し、光軸外に配置された電子線検出器16
によって試料5に照射される1次電子線2そのものを検
出するようにしたが、第3図に示すように偏向器19の
一方の偏向板を電子線検出器19aとして使用できるよ
うにすると共に、該1次電子線2をより強く曲げるよう
にする。この偏向によって、1次電子線2は第3図に点
線で示すように偏向され電子線検出器19aによってプ
ローブ電流信号として検出される。従って、この様に構
成された装置においても、電子線変動の取り除かれた映
像信号が陰極線管11に入力されるため、陰極線管11
には1次電子線の強度変化をキャンセルした鮮明な試料
像が表示される。
FIG. 3 is a diagram for explaining another embodiment of the present invention. In the embodiment shown in FIG. 1, a primary electron beam 2 is deflected by a deflector 13, and an electron beam detector 16 is arranged outside the optical axis.
However, as shown in FIG. 3, one deflection plate of the deflector 19 can be used as an electron beam detector 19a, and The primary electron beam 2 is bent more strongly. Due to this deflection, the primary electron beam 2 is deflected as shown by the dotted line in FIG. 3, and is detected as a probe current signal by the electron beam detector 19a. Therefore, even in the apparatus configured in this way, since the video signal from which electron beam fluctuations have been removed is input to the cathode ray tube 11, the cathode ray tube 11
A clear image of the sample is displayed, with changes in the intensity of the primary electron beam canceled out.

[発明の効果] 以上詳述したように本発明によれば、試料に照射される
1次電子線を帰線期間中に偏向して補正信号として検出
するようにしたので、1次電子線の強度変化をキャンセ
ルした鮮明な試料像得ることのできる電界放射型走査電
子顕微鏡が提供される。
[Effects of the Invention] As detailed above, according to the present invention, the primary electron beam irradiated onto the sample is deflected during the retrace period and detected as a correction signal. A field emission scanning electron microscope is provided that can obtain a clear sample image with intensity changes canceled.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例の概略構成図、第2図は本発
明を説明するための図、第3図は本発明の他の実施例を
説明するための図、第4図は従来例を説明するための図
、第5図は従来装置の電子線検出器を説明するための図
である。 1:FEG、2:1次電子線、3:集束レンズ、4:偏
向コイル、5:試料、8:割算回路、9:2次電子検出
器、10:増幅器、11:陰極線管、12:走査信号発
生回路、13:偏向器、14:スイッチ、15:直流電
源、16:電子線検出器、17:増幅器、18:サンプ
ルアンドホールド回路。19:偏向器、19a 二電子
線検出器。 特許出願人   日本電子株式会社 第1図
FIG. 1 is a schematic configuration diagram of one embodiment of the present invention, FIG. 2 is a diagram for explaining the present invention, FIG. 3 is a diagram for explaining another embodiment of the present invention, and FIG. 4 is a diagram for explaining another embodiment of the present invention. FIG. 5 is a diagram for explaining a conventional example, and FIG. 5 is a diagram for explaining an electron beam detector of a conventional device. 1: FEG, 2: Primary electron beam, 3: Focusing lens, 4: Deflection coil, 5: Sample, 8: Division circuit, 9: Secondary electron detector, 10: Amplifier, 11: Cathode ray tube, 12: Scanning signal generation circuit, 13: deflector, 14: switch, 15: DC power supply, 16: electron beam detector, 17: amplifier, 18: sample and hold circuit. 19: Deflector, 19a Two-electron beam detector. Patent applicant: JEOL Ltd. Figure 1

Claims (1)

【特許請求の範囲】 1)電子線を電界放射する電界放射型電子銃と、前記電
子線により試料上を走査して得られるその試料よりの情
報を検出する情報検出手段と、該電界放射型電子銃より
の電子線電流の変動を検出するために走査信号の帰線期
間中に光軸外へ前記電子線を偏向するための偏向手段と
、該偏向手段によって光軸外に偏向された電子線の強度
を検出するための電子線検出手段と、該電子線検出手段
によって検出された信号を一時的に記憶するための記憶
手段と、前記記憶手段よりの信号と前記情報検出手段よ
りの信号とに基づいて前記電子線の変動による前記情報
信号の変動を補正するための手段とを備えた電界放射型
走査電子顕微鏡。 2)前記電子線を偏向するための偏向手段と前記電子線
検出手段とが兼ねられていることを特徴とする特許請求
の範囲第1項に記載の電界放射型走査電子顕微鏡微鏡。
[Scope of Claims] 1) A field emission type electron gun that emits an electron beam in an electric field, an information detection means that detects information from the sample obtained by scanning the sample with the electron beam, and the field emission type electron gun. a deflection means for deflecting the electron beam off the optical axis during the retrace period of a scanning signal in order to detect fluctuations in the electron beam current from the electron gun; and electrons deflected off the optical axis by the deflection means. An electron beam detection means for detecting the intensity of the beam, a storage means for temporarily storing the signal detected by the electron beam detection means, a signal from the storage means and a signal from the information detection means. and means for correcting fluctuations in the information signal due to fluctuations in the electron beam. 2) The field emission type scanning electron microscope according to claim 1, characterized in that the deflection means for deflecting the electron beam and the electron beam detection means also serve as the field emission type scanning electron microscope.
JP638188A 1988-01-14 1988-01-14 Electric field emission type scanning electron microscope Pending JPH01186743A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP638188A JPH01186743A (en) 1988-01-14 1988-01-14 Electric field emission type scanning electron microscope

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP638188A JPH01186743A (en) 1988-01-14 1988-01-14 Electric field emission type scanning electron microscope

Publications (1)

Publication Number Publication Date
JPH01186743A true JPH01186743A (en) 1989-07-26

Family

ID=11636805

Family Applications (1)

Application Number Title Priority Date Filing Date
JP638188A Pending JPH01186743A (en) 1988-01-14 1988-01-14 Electric field emission type scanning electron microscope

Country Status (1)

Country Link
JP (1) JPH01186743A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014150002A (en) * 2013-02-01 2014-08-21 Horon:Kk Noise reduction electron beam device, and electron beam noise reduction method
CN105006416A (en) * 2015-05-19 2015-10-28 北京中科科仪股份有限公司 Scanning electron microscope probe current detection device and scanning electron microscope

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014150002A (en) * 2013-02-01 2014-08-21 Horon:Kk Noise reduction electron beam device, and electron beam noise reduction method
CN105006416A (en) * 2015-05-19 2015-10-28 北京中科科仪股份有限公司 Scanning electron microscope probe current detection device and scanning electron microscope
CN105006416B (en) * 2015-05-19 2017-09-19 北京中科科仪股份有限公司 A kind of ESEM probe current detection means and a kind of ESEM

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