JPS6236240Y2 - - Google Patents
Info
- Publication number
- JPS6236240Y2 JPS6236240Y2 JP1982120729U JP12072982U JPS6236240Y2 JP S6236240 Y2 JPS6236240 Y2 JP S6236240Y2 JP 1982120729 U JP1982120729 U JP 1982120729U JP 12072982 U JP12072982 U JP 12072982U JP S6236240 Y2 JPS6236240 Y2 JP S6236240Y2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- microwave
- plasma generation
- gas
- processing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000010355 oscillation Effects 0.000 claims description 8
- 239000007789 gas Substances 0.000 description 17
- 239000012495 reaction gas Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Landscapes
- Physical Or Chemical Processes And Apparatus (AREA)
Description
【考案の詳細な説明】
〔考案の技術分野〕
この考案は被処理物に活性化されたガスを照射
して、種々の処理を行なうために用いるマイクロ
波プラズマ処理装置に関する。[Detailed Description of the Invention] [Technical Field of the Invention] This invention relates to a microwave plasma processing apparatus that is used to perform various treatments by irradiating an object to be treated with an activated gas.
一般に、真空放電によるプラズマを利用して生
成活性化された反応ガスを被処理物に照射して、
各種の処理を行なう試みがなされている。このよ
うな場合、マイクロ波プラズマ処理装置が主に用
いられるが従来の装置は第１図に示すように構成
されている。即ち、被処理物１１を載置し、パツ
キン９及び蓋１０により気密を保持し内部が真空
度数Torr以下に減圧される反応器７があり、こ
の反応器７には排気管７ｂを介して排気装置８が
連設されている。又、反応器７にはガス輸送管７
ａと排気管７ｂとが被処理物１１を挾んで設けら
れており、ガス輸送管７ａには流量調節弁１２を
介して反応ガス源（図示せず）が接続されてい
る。ガス輸送管７ａはプラズマ発生炉５を貫通し
ており、プラズマ発生炉５にはマイクロ波発振源
であるマイクロ波発振器１から発生したマイクロ
波電力が給電される。上記プラズマ発生炉５の内
部に位置する輸送管部分はプラズマ発生管７ｃを
構成しており、ここで反応ガスがマイクロ波電力
によりプラズマ化され活性化される。
Generally, the workpiece is irradiated with a reactive gas generated and activated using plasma generated by vacuum discharge.
Attempts have been made to perform various treatments. In such cases, a microwave plasma processing apparatus is mainly used, and a conventional apparatus is constructed as shown in FIG. That is, there is a reactor 7 in which the object to be processed 11 is placed, the interior is kept airtight by a packing 9 and a lid 10, and the pressure is reduced to below the vacuum degree Torr. A device 8 is installed in series. In addition, a gas transport pipe 7 is installed in the reactor 7.
A and an exhaust pipe 7b are provided to sandwich the object to be processed 11, and a reactant gas source (not shown) is connected to the gas transport pipe 7a via a flow rate control valve 12. The gas transport pipe 7a passes through the plasma generation furnace 5, and the plasma generation furnace 5 is supplied with microwave power generated from the microwave oscillator 1, which is a microwave oscillation source. The transport pipe portion located inside the plasma generating furnace 5 constitutes a plasma generating tube 7c, where the reaction gas is turned into plasma and activated by microwave power.
尚、図中の整合器４及び摺動短絡板６はマイク
ロ波電力を効率良く反応ガスに吸収させるための
ものである。又、パワーモニタ３は、マイクロ波
電力の吸収具合を見るためのもので、指示計３ａ
に吸収度合が指示される。又、２はアイソレー
タ、５ａは遮蔽筒、１３は真空計である。そして
活性化された反応ガスは排気装置８の方向に吸引
され、被処理物１１に当り表面処理が行なわれ
る。 The matching box 4 and sliding short-circuit plate 6 shown in the figure are for efficiently absorbing microwave power into the reaction gas. Moreover, the power monitor 3 is used to check the degree of absorption of microwave power, and the indicator 3a
The degree of absorption is indicated. Further, 2 is an isolator, 5a is a shielding tube, and 13 is a vacuum gauge. The activated reaction gas is then sucked in the direction of the exhaust device 8, hits the object to be treated 11, and performs surface treatment.
〔背景技術の問題点〕
上記のような従来の装置を使用してプラズマを
発生させた場合、ガス圧が低くなつたり、マイク
ロ波発振出力が小さくなつたりすると、プラズマ
が安定して発光開始しないなどの欠点がある。
又、プラズマ発生部を複数設けて同時にプラズマ
を発生させたい場合など、同時に発光開始しない
ため、被処理物の処理効果にアンバランスが生じ
るなどの欠点がある。[Problems with the background technology] When plasma is generated using the conventional device described above, if the gas pressure becomes low or the microwave oscillation output becomes small, the plasma does not stably start emitting light. There are drawbacks such as.
Furthermore, when a plurality of plasma generating sections are provided and it is desired to generate plasma at the same time, since the emission of light does not start at the same time, there is a drawback that the processing effect of the object to be processed becomes unbalanced.
この考案の目的は、プラズマ発生器の近傍に高
周波発生器を設けることにより、安定してプラズ
マが発生、開始するマイクロ波プラズマ処理装置
を提供することである。
The purpose of this invention is to provide a microwave plasma processing apparatus that stably generates and starts plasma by providing a high frequency generator near the plasma generator.
この考案は、マイクロ波発振源と、このマイク
ロ波発振源の出力部に導波管を介して連設された
プラズマ発生炉と、このプラズマ発生炉に貫通装
着されているプラズマ発生管と、このプラズマ発
生管にて発生した活性化ガスを導き被処理物に活
性化ガスを照射する反応器を備えたマイクロ波プ
ラズマ処理装置において、上記プラズマ発生管の
近傍に高周波発生器を設けたマイクロ波プラズマ
処理装置である。
This idea consists of a microwave oscillation source, a plasma generation furnace connected to the output section of the microwave oscillation source via a waveguide, a plasma generation tube installed through the plasma generation furnace, and A microwave plasma processing apparatus equipped with a reactor that guides activated gas generated in a plasma generation tube and irradiates the object to be treated with the activated gas, in which a high frequency generator is provided near the plasma generation tube. It is a processing device.
この考案のマイクロ波プラズマ処理装置の要部
は第２図に示すように構成され、従来例（第１
図）と同一箇所は同一符号を付すことにする。
The main parts of the microwave plasma processing apparatus of this invention are constructed as shown in FIG.
The same parts as in Figure) are given the same reference numerals.
即ち、上記従来の欠点を改善するために、この
考案ではプラズマ発生管７ｃの近傍に、高周波発
生器例えばテスラ・コイルのような高周波放電筒
１４が配設され、この高周波放電筒１４は高周波
発生源（図示せず）に接続されている。 That is, in order to improve the above-mentioned conventional drawbacks, in this invention, a high frequency generator such as a high frequency discharge tube 14 such as a Tesla coil is disposed near the plasma generating tube 7c. connected to a power source (not shown).
尚、この考案のマイクロ波プラズマ処理装置
は、上記以外は従来例（第１図）と同様構成ゆ
え、詳細な設明及び図示を省略する。 The microwave plasma processing apparatus of this invention has the same structure as the conventional example (FIG. 1) except for the above, and therefore detailed design and illustration will be omitted.
さて、上記のこの考案の装置を用いて被処理物
１１を活性化ガスにより処理するには被処理物１
１を反応器７内に載置した後、パツキン９、蓋１
０を反応器７に当て、排気装置８を動作させ、反
応器７、プラズマ発生管７ｃを含むガス輸送管７
ａなどを10-1〜10-2Torrに減圧する。そして、処
理に使用する反応ガス例えばO2，N2、空気、
Ar，H2，CF4など、或るいはそれらの混合気体
をガス供給源から輸送管７ａに送り込み、その中
が10〜10-1Torrになるよう流量調節弁１２で調
整する。 Now, in order to treat the workpiece 11 with an activated gas using the above-mentioned device of this invention, the workpiece 1
After placing the container 1 in the reactor 7, the packing 9 and the lid 1 are
0 is applied to the reactor 7, the exhaust device 8 is operated, and the reactor 7 and the gas transport pipe 7 including the plasma generating pipe 7c are exhausted.
The pressure in the chamber is reduced to 10-1 to 10-2 Torr. Then, the reactive gases used in the process, such as O2 , N2 , air,
Ar, H2 , CF4 , or a mixture thereof is fed from a gas supply source into the transport pipe 7a, and the pressure therein is adjusted by the flow rate control valve 12 to 10 to 10-1 Torr.
こうしてマイクロ波発振器１を動作してマイク
ロ波を発生させると同時に高周波発生源を動作さ
せる。そうすると高周波放電筒１４に高周波電界
が生じ、プラズマ発生管７ｃのイ部で反応ガスの
一部が活性化し、その後プラズマ発生管７ｃ部
で、アイソレータ２、パワーモニタ３、整合器４
を介してプラズマ発生炉５に伝送されたマイクロ
波電力を吸収して全体的に活性化することにな
る。活性化されたガスは、排気装置８に向つて吸
引され、その途中で被処理物１１に当り処理に利
用される。摺動短絡板６、整合器４を調節してマ
イクロ波電力を効率良く反応ガスに吸引させるこ
とは言う迄もない。 In this way, the microwave oscillator 1 is operated to generate microwaves, and at the same time, the high frequency generation source is operated. Then, a high-frequency electric field is generated in the high-frequency discharge tube 14, and a part of the reaction gas is activated in part A of the plasma generation tube 7c, and then the isolator 2, power monitor 3, matching device 4 is activated in the plasma generation tube 7c part.
It absorbs the microwave power transmitted to the plasma generating furnace 5 through the plasma generating furnace 5 and activates it as a whole. The activated gas is sucked toward the exhaust device 8, and on the way, it hits the object to be processed 11 and is used for processing. Needless to say, the sliding short-circuit plate 6 and the matching device 4 are adjusted to efficiently absorb the microwave power into the reaction gas.
この考案によれば、プラズマ発生管７ｃの近傍
にテスラ・コイルのような高周波放電筒１４を配
置したので、次のような優れた効果を有してい
る。
According to this invention, the high-frequency discharge tube 14 such as a Tesla coil is placed near the plasma generating tube 7c, so that it has the following excellent effects.
即ち、この考案の装置を用いると、例えば周波
数が2450MHz、処理ガスがO2、真空度が
0.5Torr、発振出力が50Wの場合、従来の装置で
は反応ガスが活性化しなかつたものが、活性化す
るようになつた。又プラズマ発生系を複数設けた
場合、それぞれのプラズマ発生系が同時に安定し
て活性化することは少なかつたものが、この考案
の装置を用いると、同時に安定して活性化できる
ようになり、被処理物への処理ムラが無くなつて
非常に有効であつた。 That is, when using the device of this invention, for example, the frequency is 2450MHz, the processing gas is O 2 , and the degree of vacuum is
At 0.5 Torr and an oscillation output of 50 W, the reactant gas, which was not activated in the conventional device, became activated. In addition, when multiple plasma generation systems were provided, it was rare for each plasma generation system to be activated stably at the same time, but with the device of this invention, it is now possible to activate them stably at the same time. It was very effective as there was no unevenness in the treatment of the object to be treated.
尚、高周波発生源の動作時間は、プラズマ発生
開始時の数秒間、トリガー役として使用しても、
連続的に使用しても良いことは現う迄もない。 In addition, the operating time of the high frequency source is a few seconds at the start of plasma generation, even if it is used as a trigger.
There is no indication that it can be used continuously.
第１図は従来のマイクロ波プラズマ処理装置を
示す断面図、第２図はこの考案の一実施例に係る
マイクロ波プラズマ処理装置の要部を示す断面図
である。
１……マイクロ波発振器（マイクロ波発振
源）、２……アイソレータ、３……パワーモニ
タ、３ａ……指示計、４……整合器、５……プラ
ズマ発生炉、５ａ……遮蔽筒、６……摺動短絡
板、７……反応器、７ａ……ガス輸送管、７ｂ…
…排気管、７ｃ……プラズマ発生管、８……排気
装置、９……パツキン、１０……蓋、１１……被
処理物、１２……流量調節弁、１３……真空計、
１４……高周波放電筒（高周波発生器）。
FIG. 1 is a cross-sectional view showing a conventional microwave plasma processing apparatus, and FIG. 2 is a cross-sectional view showing essential parts of a microwave plasma processing apparatus according to an embodiment of this invention. DESCRIPTION OF SYMBOLS 1... Microwave oscillator (microwave oscillation source), 2... Isolator, 3... Power monitor, 3a... Indicator, 4... Matching box, 5... Plasma generation furnace, 5a... Shielding cylinder, 6 ...Sliding short circuit plate, 7...Reactor, 7a...Gas transport pipe, 7b...
... Exhaust pipe, 7c ... Plasma generation tube, 8 ... Exhaust device, 9 ... Packing, 10 ... Lid, 11 ... Processing object, 12 ... Flow rate control valve, 13 ... Vacuum gauge,
14...High frequency discharge tube (high frequency generator).
Claims (1)
の出力部に連設されたプラズマ発生炉と、この
プラズマ発生炉に貫通装着されているプラズマ
発生管と、このプラズマ発生管にて発生した活
性化ガスを導き被処理物に活性化ガスを照射す
る反応器を備えたマイクロ波プラズマ処理装置
において、 上記プラズマ発生管の近傍に高周波発生器を
設けたことを特徴とするマイクロ波プラズマ処
理装置。 (2) 上記プラズマ発生管は複数にして、これらを
一括して上記高周波発生器の影響を与えるよう
配置したことを特徴とする実用新案登録請求の
範囲第１項記載のマイクロ波プラズマ処理装
置。[Scope of Claim for Utility Model Registration] (1) A microwave oscillation source, a plasma generation furnace connected to the output part of the microwave oscillation source, and a plasma generation tube installed through the plasma generation furnace, In a microwave plasma processing apparatus equipped with a reactor that guides the activated gas generated in the plasma generation tube and irradiates the object to be treated with the activated gas, a high frequency generator is provided near the plasma generation tube. Features of microwave plasma processing equipment. (2) The microwave plasma processing apparatus according to claim 1, wherein a plurality of the plasma generating tubes are arranged so as to be collectively influenced by the high frequency generator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12072982U JPS5924132U (en) | 1982-08-09 | 1982-08-09 | Microwave plasma processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12072982U JPS5924132U (en) | 1982-08-09 | 1982-08-09 | Microwave plasma processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5924132U JPS5924132U (en) | 1984-02-15 |
| JPS6236240Y2 true JPS6236240Y2 (en) | 1987-09-14 |
Family
ID=30276581
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12072982U Granted JPS5924132U (en) | 1982-08-09 | 1982-08-09 | Microwave plasma processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5924132U (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59226027A (en) * | 1983-06-07 | 1984-12-19 | Toyota Motor Corp | Plasma treatment |
| JPH0831417B2 (en) * | 1988-12-02 | 1996-03-27 | 工業技術院長 | Plasma processing deposition equipment |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5221332U (en) * | 1975-08-01 | 1977-02-15 |
-
1982
- 1982-08-09 JP JP12072982U patent/JPS5924132U/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5221332U (en) * | 1975-08-01 | 1977-02-15 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5924132U (en) | 1984-02-15 |
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