JPS623589B2 - - Google Patents
Info
- Publication number
- JPS623589B2 JPS623589B2 JP53147729A JP14772978A JPS623589B2 JP S623589 B2 JPS623589 B2 JP S623589B2 JP 53147729 A JP53147729 A JP 53147729A JP 14772978 A JP14772978 A JP 14772978A JP S623589 B2 JPS623589 B2 JP S623589B2
- Authority
- JP
- Japan
- Prior art keywords
- charge
- ctd
- output
- array
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000012546 transfer Methods 0.000 claims description 231
- 239000004065 semiconductor Substances 0.000 claims description 35
- 230000005670 electromagnetic radiation Effects 0.000 claims description 6
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 230000008093 supporting effect Effects 0.000 claims description 2
- AMHIJMKZPBMCKI-PKLGAXGESA-N ctds Chemical compound O[C@@H]1[C@@H](OS(O)(=O)=O)[C@@H]2O[C@H](COS(O)(=O)=O)[C@H]1O[C@H]([C@@H]([C@H]1OS(O)(=O)=O)OS(O)(=O)=O)O[C@H](CO)[C@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O2 AMHIJMKZPBMCKI-PKLGAXGESA-N 0.000 claims 2
- 230000010354 integration Effects 0.000 description 34
- 239000000463 material Substances 0.000 description 34
- 238000003860 storage Methods 0.000 description 31
- 238000000034 method Methods 0.000 description 30
- 235000012431 wafers Nutrition 0.000 description 28
- 210000000352 storage cell Anatomy 0.000 description 19
- 230000008569 process Effects 0.000 description 14
- 238000000926 separation method Methods 0.000 description 14
- 230000005855 radiation Effects 0.000 description 13
- 230000002829 reductive effect Effects 0.000 description 13
- 239000000969 carrier Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000012545 processing Methods 0.000 description 9
- 238000009825 accumulation Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 8
- 238000002955 isolation Methods 0.000 description 8
- 230000007480 spreading Effects 0.000 description 8
- 238000003892 spreading Methods 0.000 description 8
- 210000004027 cell Anatomy 0.000 description 7
- 238000001514 detection method Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000000644 propagated effect Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 230000000717 retained effect Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 5
- 230000033001 locomotion Effects 0.000 description 5
- 230000001902 propagating effect Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000008447 perception Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 210000001520 comb Anatomy 0.000 description 2
- 238000013480 data collection Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000003094 perturbing effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000011946 reduction process Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 238000006424 Flood reaction Methods 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 101000860173 Myxococcus xanthus C-factor Proteins 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000000866 electrolytic etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000001976 improved effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000135 prohibitive effect Effects 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14875—Infrared CCD or CID imagers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/857,633 US4176369A (en) | 1977-12-05 | 1977-12-05 | Image sensor having improved moving target discernment capabilities |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5487080A JPS5487080A (en) | 1979-07-11 |
| JPS623589B2 true JPS623589B2 (US08063081-20111122-C00044.png) | 1987-01-26 |
Family
ID=25326406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14772978A Granted JPS5487080A (en) | 1977-12-05 | 1978-11-28 | Image sensor |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4176369A (US08063081-20111122-C00044.png) |
| JP (1) | JPS5487080A (US08063081-20111122-C00044.png) |
| DE (1) | DE2852592A1 (US08063081-20111122-C00044.png) |
| GB (1) | GB2009506B (US08063081-20111122-C00044.png) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01149489U (US08063081-20111122-C00044.png) * | 1988-03-31 | 1989-10-17 | ||
| JPH02149785U (US08063081-20111122-C00044.png) * | 1989-05-24 | 1990-12-21 |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5846070B2 (ja) * | 1979-02-13 | 1983-10-14 | 松下電器産業株式会社 | 固体撮像装置 |
| US4257057A (en) * | 1979-05-07 | 1981-03-17 | Rockwell International Corporation | Self-multiplexed monolithic intrinsic infrared detector |
| US4321614A (en) * | 1980-03-12 | 1982-03-23 | Westinghouse Electric Corp. | Radiant energy sensor with blooming control |
| EP0037200B1 (en) * | 1980-03-31 | 1985-03-20 | Hughes Aircraft Company | Charge coupled device with buried channel stop |
| JPS5768070A (en) * | 1980-10-16 | 1982-04-26 | Sony Corp | Charge transfer device |
| US4568960A (en) * | 1980-10-23 | 1986-02-04 | Rockwell International Corporation | Blocked impurity band detectors |
| JPS57108363U (US08063081-20111122-C00044.png) * | 1980-12-24 | 1982-07-03 | ||
| US4506436A (en) * | 1981-12-21 | 1985-03-26 | International Business Machines Corporation | Method for increasing the radiation resistance of charge storage semiconductor devices |
| JPS5944519A (ja) * | 1982-09-03 | 1984-03-13 | Hitachi Ltd | 燃焼状態診断方法 |
| FR2533371B1 (fr) * | 1982-09-21 | 1985-12-13 | Thomson Csf | Structure de grille pour circuit integre comportant des elements du type grille-isolant-semi-conducteur et procede de realisation d'un circuit integre utilisant une telle structure |
| JPS6042745U (ja) * | 1983-08-30 | 1985-03-26 | ソニー株式会社 | 固体撮像素子 |
| FR2560472B1 (fr) * | 1984-02-23 | 1987-08-21 | Proge | Dispositif de releve de profil rapide |
| JPH0673372B2 (ja) * | 1985-06-24 | 1994-09-14 | 三菱電機株式会社 | 光読み取り装置及びその製造方法 |
| US5285100A (en) * | 1988-07-22 | 1994-02-08 | Texas Instruments Incorporated | Semiconductor switching device |
| EP0444696B1 (en) * | 1990-03-02 | 1996-05-22 | Sony Corporation | Solid state image sensor |
| KR930007532B1 (ko) * | 1990-07-12 | 1993-08-12 | 금성일렉트론 주식회사 | Soi 구조를 이용한 3차원 ccd 영상소자 및 그 제조방법 |
| JP2757624B2 (ja) * | 1991-10-21 | 1998-05-25 | 日本電気株式会社 | 赤外線固体撮像素子及びその製造方法 |
| US5424574A (en) * | 1992-09-23 | 1995-06-13 | Scientific Imaging Technologies, Inc. | Light shield for a back-side thinned CCD |
| US5886783A (en) * | 1994-03-17 | 1999-03-23 | Shapanus; Vincent F. | Apparatus for isolating light signals from adjacent fiber optical strands |
| US5513002A (en) * | 1994-03-17 | 1996-04-30 | The A.R.T. Group, Inc. | Optical corona monitoring system |
| US5764823A (en) * | 1994-03-17 | 1998-06-09 | A R T Group Inc | Optical switch for isolating multiple fiber optic strands |
| US5552880A (en) * | 1994-03-17 | 1996-09-03 | A R T Group Inc | Optical radiation probe |
| US5550629A (en) * | 1994-03-17 | 1996-08-27 | A R T Group Inc | Method and apparatus for optically monitoring an electrical generator |
| US5550631A (en) * | 1994-03-17 | 1996-08-27 | A R T Group Inc | Insulation doping system for monitoring the condition of electrical insulation |
| FR2734520B1 (fr) * | 1995-05-23 | 1997-12-05 | Kiekert Ag | Procede d'ajustage d'une portiere de vehicule automobile montee avec support de serrure asservi pour la mise en oeuvre du procede et applications du procede dans le cadre d'un systeme de diagnostic pour vehicules automobiles |
| US20010054723A1 (en) * | 2000-03-17 | 2001-12-27 | Tadashi Narui | Image sensor, method of fabricating the same, and exposure apparatus, measuring device, alignment device, and aberration measuring device using the image sensor |
| JP4757779B2 (ja) * | 2006-11-15 | 2011-08-24 | 浜松ホトニクス株式会社 | 距離画像センサ |
| JP5350659B2 (ja) * | 2008-03-25 | 2013-11-27 | 浜松ホトニクス株式会社 | 固体撮像装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5125390A (US08063081-20111122-C00044.png) * | 1974-06-28 | 1976-03-01 | Siemens Ag |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3906543A (en) * | 1971-12-23 | 1975-09-16 | Bell Telephone Labor Inc | Solid state imaging apparatus employing charge transfer devices |
| US3863065A (en) * | 1972-10-02 | 1975-01-28 | Rca Corp | Dynamic control of blooming in charge coupled, image-sensing arrays |
| US3865722A (en) * | 1972-10-25 | 1975-02-11 | Patrick C Stoddard | Corona discharge treatment of an oil slick |
| US3851096A (en) * | 1972-11-03 | 1974-11-26 | Texas Instruments Inc | Surveillance system |
| US3806729A (en) * | 1973-04-30 | 1974-04-23 | Texas Instruments Inc | Charge coupled device ir imager |
| NL7308240A (US08063081-20111122-C00044.png) * | 1973-06-14 | 1974-12-17 | ||
| US3979604A (en) * | 1973-08-16 | 1976-09-07 | Texas Instruments Incorporated | Infrared charge-coupled imager |
| US3983573A (en) * | 1974-03-12 | 1976-09-28 | Nippon Electric Company, Ltd. | Charge-coupled linear image sensing device |
| US3932775A (en) * | 1974-07-25 | 1976-01-13 | Rca Corporation | Interlaced readout of charge stored in a charge coupled image sensing array |
| US3940602A (en) * | 1974-09-23 | 1976-02-24 | The United States Of America As Represented By The Secretary Of The Navy | Signal processing imager array using charge transfer concepts |
| US3971003A (en) * | 1974-11-18 | 1976-07-20 | Rca Corporation | Charge coupled device imager |
| US3983395A (en) * | 1974-11-29 | 1976-09-28 | General Electric Company | MIS structures for background rejection in infrared imaging devices |
| US3996599A (en) * | 1975-03-19 | 1976-12-07 | The United States Of America As Represented By The Secretary Of The Army | Image detector with background suppression |
-
1977
- 1977-12-05 US US05/857,633 patent/US4176369A/en not_active Expired - Lifetime
-
1978
- 1978-11-20 GB GB7845244A patent/GB2009506B/en not_active Expired
- 1978-11-28 JP JP14772978A patent/JPS5487080A/ja active Granted
- 1978-12-05 DE DE19782852592 patent/DE2852592A1/de not_active Withdrawn
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5125390A (US08063081-20111122-C00044.png) * | 1974-06-28 | 1976-03-01 | Siemens Ag |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01149489U (US08063081-20111122-C00044.png) * | 1988-03-31 | 1989-10-17 | ||
| JPH02149785U (US08063081-20111122-C00044.png) * | 1989-05-24 | 1990-12-21 |
Also Published As
| Publication number | Publication date |
|---|---|
| US4176369A (en) | 1979-11-27 |
| GB2009506B (en) | 1982-02-24 |
| GB2009506A (en) | 1979-06-13 |
| DE2852592A1 (de) | 1979-06-07 |
| JPS5487080A (en) | 1979-07-11 |
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