JPS6233433A - Manufacture of high withstand voltage semiconductor element - Google Patents

Abstract

PURPOSE:To impress the prescribed high voltage in the state of a semiconductor element and to enable to measure and inspect the semiconductor element by a method wherein electrical insulating liquid is coated on the surface of the semiconductor element prior to a measurement of high voltage and a measurement of electrical characteristics. CONSTITUTION:A thin and uniform silicone oil film 11 is coated on the main surface of a semiconductor wafer (101) on the side where a measurement for a semiconductor element 102 is executed by applying insulating fluid, such as silicone oil (11), on the main surface by a spin coating or the like, then measuring needles (contact needles) 103 are erected to execute a measurement of high voltage. In this case, the measuring needles are directly erected on the semiconductor element from over the silicone oil film 6 of insulating liquid. When high voltage is impressed and the measurement is executed in such a way, no spark or no breaking is generated at all. Moreover, the selection for plural semiconductor elements formed on the semiconductor wafer can be also executed automatically by impressing high voltage with a probe machine or the like and the scratching for marking a defective element detected by this prove machine or the like can be also executed freely as well. The removal of the silicon oil film in after the measurement ends can be easily attained by a cleaning treatment of trichloroethylene, trichloroethane or the like.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for manufacturing a high voltage semiconductor device, and is particularly applicable to high voltage measurement and electrical property measurement in the manufacturing of high voltage semiconductor devices.

[Technical background of the invention]

For example, high voltage measurement and measurement of electrical characteristics of high-voltage semiconductor elements (hereinafter referred to as semiconductor elements) formed on a semiconductor wafer or individual semiconductor elements formed by dividing the semiconductor wafer are shown in Fig. 2. The measuring needles 103, 103 were successively pressed against the undivided semiconductor elements 102, 102, . . . formed on the wafer 101. Note that 112 in the semiconductor element indicates some electrodes.

In order to prevent the generation of sparks or damage during the above measurements, there is no choice but to conduct the test at a voltage lower than the voltage value that would cause sparks or damage. Therefore, after the product is assembled, regular high voltage measurements or electrical property measurements are performed. was doing.

Note that although the above measurements are performed on undivided semiconductor elements, the same applies to individual semiconductor elements after division.

[Problems with background technology]

According to the background technology described above, inspection of semiconductor devices in their state;
For example, in order to avoid sparks on the semiconductor device caused by high voltage exceeding 600 volts, destruction of the semiconductor device, and failure of the measuring instrument due to high voltage spark noise, etc., the voltage lower than the voltage specified for the test is used. Rough sorting was performed using voltage, and assembly was then carried out. For this reason, inspections of the assembled final products resulted in many defects in voltage resistance and electrical properties, posing serious problems in terms of quality and yield.

[Purpose of the invention]

In view of the above-mentioned problems, the present invention provides a method for manufacturing a semiconductor device that enables measurement and inspection by applying a predetermined high voltage to the semiconductor device state.6 [Summary of the Invention] The manufacturing method involves manufacturing a high voltage semiconductor device, and is characterized by applying an electrical insulating liquid (11) to the surface of the semiconductor device (102) and performing the above measurements prior to high voltage measurement and electrical characteristic measurement.

[Embodiments of the invention]

An embodiment of the present invention will be described below with reference to FIG. In addition, in the description, parts that are the same as in the prior art are indicated by the same reference numerals as in the prior art in the drawings, and the description thereof will be omitted.

The semiconductor element 102 in the state shown in FIG. 1a has been processed to the state shown in FIG. 2 in the background art and is just before being subjected to high breakdown voltage measurement and electrical characteristic measurement. As shown in FIG. 1 in a top view and in FIG.
005 (manufactured by Toshi Silicone Co., Ltd.)) using a spin cord or the like to apply a thin and uniform layer of silicone oil WAll. Next, the measuring needle 103 is set up to perform high voltage measurement. In this case, i11! The I needle is set directly on the semiconductor element from above the silicone oil film of the insulating liquid. When high voltage is applied and measurements are performed in this manner, no sparks or destruction occur. Furthermore, selection of a plurality of semiconductor elements formed on a semiconductor wafer can be automatically performed by applying a high voltage using a probe machine or the like. With this, it is also possible to damage the display on the detected defective element. Furthermore, after the measurement is completed, silicone oil can be easily removed by cleaning with trichlorethylene, trichloroethane, or the like.

Note that although the above measurement is performed on an undivided semiconductor element, the same applies to the case where it is performed on an individual semiconductor element after one division.

〔Effect of the invention〕

According to this invention, it is possible to reliably measure high withstand voltage and electrical characteristics before assembly, and therefore only semiconductor elements with predetermined electrical characteristics can be assembled into products, reducing material and other economic efficiency and time loss. There are significant advantages, such as significant improvements. Furthermore, since there is no generation of sparks or the like, there is also the advantage that troubles due to malfunctions of measuring instruments, etc. do not occur.

[Brief explanation of the drawing]

FIG. 1 shows a part of the manufacturing process for explaining the manufacturing method of one embodiment of the present invention, FIG. FIG. 3 is a cross-sectional view showing a part of a conventional manufacturing process. 11 Silicone oil film 101 Semiconductor wafers 102, 102... Semiconductor elements 103, 103... Pressure welding needle

Claims (1)

[Claims] 1. A method for manufacturing a high voltage semiconductor device, which comprises applying an electrical insulating liquid to the surface of the semiconductor device and performing the above measurements prior to high voltage measurement and electrical characteristic measurement.